Vishay Siliconix IRFR1N60APBF

Overview

IRFR1N60APBF from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.

For engineers reviewing the IRFR1N60APBF datasheet, IRFR1N60APBF pinout, IRFR1N60APBF application, or IRFR1N60APBF equivalent, key selection criteria include its 600 V V_DS, low Q_g/Q_gd ratio for clean turn-off in hard-switched topologies, body diode t_rr of 290–440 ns, and validated operation up to 150 °C junction temperature.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche capability and dV/dt ruggedness up to 3.8 V/ns. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (229 pF C_iss) support direct drive from standard logic-level controllers without gate buffers.

The device integrates a fast-recovery body diode (t_rr = 290–440 ns, Q_rr = 510–760 μC) and exhibits stable R_DS(on) over temperature (normalized to 2.5× at 150 °C), enabling predictable conduction loss in thermally constrained PCB layouts.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), optimized for PCB copper area heat spreading per Vishay Application Note 826.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR1N60APBF, SiHFR1N60A-GE3 offers identical performance in a fully green package, while IRFU1N60APbF trades DPAK's compact footprint for better thermal resistance via IPAK's larger thermal pad - both require no circuit redesign but differ in mechanical integration and compliance status.

Availability

IRFR1N60APBF is available at Aetrix Electronics and suitable for offline flyback converters, active power factor correction circuits, and uninterruptible power supply inverters requiring stable component supply across industrial and consumer electronics production cycles.

Supply support for IRFR1N60APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR1N60APBF belongs to Vishay's high-voltage N-channel power MOSFET product line, engineered for cost-sensitive, low-power AC/DC conversion where ruggedness, consistency, and long-term supply stability are critical.

FAQ

What is the maximum continuous drain current for IRFR1N60APBF at 100 °C case temperature?

The maximum continuous drain current for IRFR1N60APBF is 0.89 A when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain junction temperature ≤150 °C. The IRFR1N60APBF datasheet confirms this value under TC = 100 °C condition.

Does IRFR1N60APBF have a built-in body diode, and what are its key parameters?

Yes, IRFR1N60APBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include forward voltage V_SD = 1.6 V at I_S = 1.4 A and T_J = 25 °C, reverse recovery time t_rr = 290–440 ns, and reverse recovery charge Q_rr = 510–760 μC. These values are measured under standardized conditions (IF = 1.4 A, dI/dt = 100 A/μs) and directly impact efficiency in freewheeling and synchronous rectification applications. The IRFR1N60APBF body diode is fully characterized in the Vishay S21-0466 datasheet.

Can IRFR1N60APBF be used in place of IRFR1N60APbF?

Yes - IRFR1N60APBF and IRFR1N60APbF are identical in electrical specifications, thermal performance, and package; the "BF" and "PbF" suffixes both denote lead-free construction, and "BE3" in IRFR1N60APBF-BE3 indicates an alternate manufacturing location. No electrical or mechanical redesign is needed when substituting IRFR1N60APBF for IRFR1N60APbF. All critical parameters including V_DS, R_DS(on), Q_g, and avalanche ratings match per Vishay documentation. The IRFR1N60APBF part number is functionally equivalent to IRFR1N60APbF.

What is the gate-source threshold voltage range for IRFR1N60APBF?

The gate-source threshold voltage (V_GS(th)) for IRFR1N60APBF is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing unintended conduction from noise coupling. The parameter is tested per JEDEC JESD24-10 and remains stable across temperature; the IRFR1N60APBF datasheet lists it in the Static Characteristics table under Specifications (T_J = 25 °C).

Is IRFR1N60APBF suitable for hard-switched PFC boost applications?

IRFR1N60APBF is suitable for low-power active PFC boost stages (≤100 W), where its 600 V V_DS, 7.0 Ω R_DS(on), and 14 nC Q_g provide adequate voltage margin and manageable switching loss. However, its body diode t_rr (290–440 ns) and Q_rr (510–760 μC) are higher than dedicated PFC MOSFETs, so efficiency may be limited at >50 kHz. For optimal performance, pair IRFR1N60APBF with a small RC snubber and ensure gate drive strength exceeds 1 A peak. The IRFR1N60APBF application notes confirm use in PFC per Vishay S21-0466.