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Vishay Siliconix IRFR1N60ATRLPBF
- Part No.:
- IRFR1N60ATRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1N60ATRLPBF.pdf
- Description:
- MOSFET N-CH 600V 1.4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,914
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Product details
Overview
IRFR1N60ATRLPBF from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.
For engineers reviewing the IRFR1N60ATRLPBF datasheet, IRFR1N60ATRLPBF pinout, IRFR1N60ATRLPBF application, or IRFR1N60ATRLPBF equivalent, key selection considerations include its 600 V blocking rating, thermally robust DPAK footprint, body diode recovery time of 290–440 ns, and suitability for unclamped inductive switching in offline AC/DC converters.
Technical Context
This MOSFET employs planar V-groove silicon technology optimized for high-voltage ruggedness and controlled dV/dt immunity. Its gate structure delivers low Qg (14 nC) and moderate Qgd/Qgs ratio (8.1/2.7), enabling stable operation with standard gate drivers in discontinuous conduction mode (DCM) topologies.
The device integrates a fast-recovery body diode (trr = 290–440 ns, Qrr = 510–760 μC) and is fully characterized for repetitive avalanche (IAR = 1.4 A, EAR = 3.6 mJ), supporting reliable operation in snubberless flyback and clamp circuits without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 480 V DC bus designs with 25 % margin for line surges and ringing in universal-input offline SMPS. |
| RDS(on) max | 7.0 Ω @ VGS = 10 V - enables <1 W conduction loss at 1.4 A DC, suitable for low-power (<30 W) isolated converters. |
| Qg max | 14 nC - allows drive with low-power controllers (e.g., UC384x, VIPer) without requiring external buffer stages. |
| EAS | 93 mJ - permits safe unclamped inductive switching in flyback transformers up to 95 mH with IAS = 1.4 A. |
| trr | 290–440 ns - minimizes diode reverse recovery losses and associated voltage overshoot during turn-on transitions. |
| RthJC | 3.5 °C/W - enables >2 W continuous dissipation with modest heatsinking, critical for compact board-level thermal management. |
| ID cont. | 1.4 A @ TC = 25 °C - defines maximum steady-state current under PCB-mount conditions per JEDEC JESD51-2. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compliant with JEDEC MO-235.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; low 2.7 nC Qgs ensures fast turn-on with minimal Miller effect. |
| D (Drain) | High-side switch node | Connected to transformer primary and heat sink; electrically tied to exposed copper pad for thermal path to PCB. |
| S (Source) | Reference node / return path | Provides ground reference for gate drive and current sensing; forms common source configuration with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (14 nC) | Reduces gate drive power and simplifies controller interface - no external driver needed for <100 kHz operation. |
| Fully characterized Coss eff. (130 pF) | Enables accurate snubber design and soft-switching analysis across 0–480 V VDS range. |
| 93 mJ EAS | Eliminates need for external clamping components in low-energy flyback applications, reducing BOM count. |
| Body diode trr = 290–440 ns | Suppresses voltage spikes during synchronous rectification transition, improving system EMI profile. |
| ±30 V VGS rating | Withstands gate transients in noisy industrial environments without requiring Zener clamping. |
Applications
| AC/DC Flyback Converter | Power Factor Correction (PFC) |
|---|---|
|
Use Scenario: Primary-side switching in 12–24 W universal-input offline adapters with DCM control. IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer from AC line to transformer primary; operates at 65–130 kHz with zero-current switching. Use Value: 600 V rating accommodates 375 V peak rectified input with margin; low Qg enables direct drive from current-mode PWM ICs. |
Use Scenario: Boost switch in active PFC stage for LED drivers and industrial power supplies (20–40 W). IC Role / Device Role / Timing Role: Fast-turning boost transistor shaping input current waveform to match sinusoidal voltage; commutates at 50–100 kHz. Use Value: Body diode recovery performance reduces boost diode stress; RDS(on) keeps conduction loss below 0.5 W at full load. |
| Uninterruptible Power Supply (UPS) | Industrial Control Power Supply |
|
Use Scenario: DC-DC isolation stage in line-interactive UPS battery backup circuits operating from 360–400 V DC bus. IC Role / Device Role / Timing Role: Primary switch in forward or flyback topology providing regulated 12 V/5 V auxiliary rails during mains failure. Use Value: Repetitive avalanche rating (EAR = 3.6 mJ) ensures reliability during bus overvoltage events and transformer saturation faults. |
Use Scenario: Input-stage switch in DIN-rail mounted PLC power modules requiring long-term stability under wide ambient temperature swings. IC Role / Device Role / Timing Role: High-side switch in isolated auxiliary supply delivering 24 V bias to I/O drivers and communication interfaces. Use Value: -55 °C to +150 °C operating range and 50 °C/W RthJA (PCB mount) support operation in sealed enclosures without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | Same 600 V rating, but higher RDS(on) (8.5 Ω), lower Qg (11 nC), and smaller TO-92 package - not surface-mount compatible. | Limited to through-hole prototyping; unsuitable for automated SMT assembly or thermal-intensive layouts. | Select only for hand-soldered evaluation where board space is unconstrained and thermal demand is low. |
| IXTP1R6N60P | 600 V, 1.6 A, RDS(on) = 6.5 Ω, Qg = 15.5 nC, TO-220 package - larger footprint, higher RthJC (2.5 °C/W), no integrated DPAK thermal pad. | Requires external heatsink; incompatible with dense PCB layouts targeting DPAK land patterns. | Choose when higher current headroom and discrete heatsinking are prioritized over board area and thermal integration. |
Compared with STP1NK60Z and IXTP1R6N60P, IRFR1N60ATRLPBF uniquely combines DPAK-mount thermal efficiency, 600 V ruggedness, and gate-drive simplicity in a production-ready SMT package - making it optimal for cost-sensitive, space-constrained AC/DC converters requiring no layout redesign.
Availability
IRFR1N60ATRLPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR1N60ATRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFR1N60ATRLPBF belongs to Vishay's high-voltage power MOSFET family engineered for rugged, low-cost offline AC/DC conversion - emphasizing avalanche survivability, gate drive simplicity, and thermal performance in compact surface-mount packages.
FAQ
What is the maximum continuous drain current for IRFR1N60ATRLPBF at 100 °C case temperature?
The maximum continuous drain current for IRFR1N60ATRLPBF is 0.89 A when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; designers must ensure adequate PCB copper area and airflow to sustain this current level reliably in end equipment.
Does IRFR1N60ATRLPBF support logic-level gate drive?
No, IRFR1N60ATRLPBF is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, but it requires 10 V gate-source voltage to achieve the specified RDS(on) of 7.0 Ω. Driving IRFR1N60ATRLPBF with only 3.3 V or 5 V will result in significantly higher on-resistance and excessive conduction losses - a dedicated 10 V gate driver or bootstrap circuit is required for full performance.
What is the recommended PCB pad layout for IRFR1N60ATRLPBF in DPAK package?
Vishay recommends a minimum copper pad of 10.67 mm × 5.69 mm (0.420" × 0.224") for the drain thermal pad of IRFR1N60ATRLPBF, with 0.5 mm thermal vias spaced ≤2 mm apart connecting to inner-layer ground planes. The gate and source pads should follow standard 0805-compatible dimensions. This layout achieves the specified RthJA = 50 °C/W and prevents solder voiding during reflow.
Can IRFR1N60ATRLPBF be used in avalanche mode repeatedly?
Yes, IRFR1N60ATRLPBF is rated for repetitive avalanche operation with IAR = 1.4 A and EAR = 3.6 mJ per pulse, provided pulse width and duty cycle remain within limits defined by junction temperature rise (see Figure 11). This capability allows safe operation in snubberless flyback designs where transformer leakage inductance causes unclamped voltage spikes during switch turn-off.
How does the body diode performance of IRFR1N60ATRLPBF compare to standard FRD-based solutions?
The body diode of IRFR1N60ATRLPBF exhibits trr = 290–440 ns and Qrr = 510–760 μC at TJ = 25 °C, which is slower and higher-charge than purpose-built fast recovery diodes (FRDs), but sufficient for DCM flyback operation where diode conduction is brief and non-critical. It eliminates the need for an external diode in low-power, cost-sensitive designs - though FRDs remain preferred for CCM PFC or high-frequency synchronous rectification.
IRFR1N60ATRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 840mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 229 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR1N60ATRLPBF FAQ
1.How can I place an order for IRFR1N60ATRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1N60ATRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1N60ATRLPBF reliable?
The price and inventory of IRFR1N60ATRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60ATRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR1N60ATRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60ATRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1N60ATRLPBF?
IRFR1N60ATRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1N60ATRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1N60ATRLPBF?
For technical support, including IRFR1N60ATRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60ATRLPBF requirements.
6.How does Aetrix verify that IRFR1N60ATRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR1N60ATRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60ATRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR1N60ATRLPBF?
All IRFR1N60ATRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60ATRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1N60ATRLPBF part is unused and in its original packaging.
Return procedure for IRFR1N60ATRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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