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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR1N60ATRPBF-BE3

Name: IRFR1N60ATRPBF-BE3
Brand: Vishay Siliconix
SKU: IRFR1N60ATRPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1N60ATRPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1N60ATRPBF-BE3.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

IRFR1N60ATRPBF-BE3 from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage switching in flyback SMPS topologies.

For engineers reviewing the IRFR1N60ATRPBF-BE3 datasheet, IRFR1N60ATRPBF-BE3 pinout, IRFR1N60ATRPBF-BE3 application, or IRFR1N60ATRPBF-BE3 equivalent, key selection criteria include its 600 V blocking capability, low Q_g/Q_gd ratio for fast switching, body diode recovery time under 440 ns, and thermal resistance of 3.5 °C/W junction-to-case - critical for compact, thermally constrained offline converters.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage unclamped inductive switching. Its gate structure delivers improved dV/dt ruggedness (3.8 V/ns peak diode recovery) and fully characterized C_iss/C_oss/C_rss (229 pF / 32.6 pF / 2.4 pF at V_DS = 25 V), enabling predictable snubber design in discontinuous conduction mode (DCM) flyback converters.

The device integrates a robust intrinsic body diode with 1.6 V forward voltage at 1.4 A and 290–440 ns reverse recovery time, supporting quasi-resonant operation without external diode replacement. Avalanche ratings are validated per JEDEC JESD24-1, with 3.6 mJ repetitive energy at I_AR = 1.4 A and T_J ≤ 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 V_AC) with ≥2× safety margin in 380 V DC bus applications
R_DS(on) max	7.0 Ω @ V_GS = 10 V - determines conduction loss in 1.4 A continuous drain current operation
Q_g max	14 nC - defines minimum gate driver current requirement (e.g., ≥14 mA avg for 1 μs turn-on)
E_AS	93 mJ - enables reliable operation under worst-case transformer leakage inductance energy dump
R_thJC	3.5 °C/W - allows 36 W power dissipation with ≤126 °C junction rise above 25 °C case temperature
t_rr	290–440 ns - constrains minimum off-time in QR flyback to avoid hard-switching overlap losses
I_D cont	1.4 A @ T_C = 25 °C - sets maximum output power limit in low-power (<15 W) isolated supplies

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction to PCB copper; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compatible with IPC-7351B SOIC-227 footprint.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 2.7 nC Q_gs ensures rapid threshold crossing and low Miller-induced shoot-through risk
D (Drain)	High-side switch node	Connected to transformer primary and HV rail; electrically tied to exposed thermal pad for heat sinking
S (Source)	Power return reference	Common node for gate driver return, current sense resistor, and controller ground - requires low-inductance layout

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	14 nC / 8.1 nC enables clean turn-off with minimal voltage overshoot during high-dV/dt transitions
Fully characterized capacitances	C_iss = 229 pF, C_oss = 32.6 pF, C_rss = 2.4 pF support accurate resonant timing and EMI filter sizing
Avalanche-rated	93 mJ single-pulse and 3.6 mJ repetitive energy allow safe operation without external clamping in flyback snubbers
Body diode dV/dt ruggedness	3.8 V/ns peak recovery rate prevents false turn-on during transformer reset in high-frequency QR designs
Thermal performance	R_thJC = 3.5 °C/W enables >30 W dissipation with 2 oz copper and 1"² thermal pad - no heatsink required

Applications

AC-DC Adapter	LED Driver
Use Scenario: 5–12 W isolated wall adapter with universal AC input and constant-voltage output. IC Role / Device Role / Timing Role: Primary-side high-side switch in DCM flyback topology, operating at 65–100 kHz with valley switching. Use Value: 600 V rating accommodates 380 V DC bus with margin; 7.0 Ω R_DS(on) limits conduction loss to <150 mW at 1.4 A peak, enabling >82% efficiency.	Use Scenario: Constant-current LED driver for commercial downlights with surge immunity to 2 kV line transients. IC Role / Device Role / Timing Role: Main switching element in primary-side regulated flyback, handling 1.4 A pulsed drain current during LED string regulation. Use Value: 93 mJ E_AS absorbs transformer leakage energy during overvoltage events, eliminating need for TVS clamping on primary.
Industrial Sensor Power	Medical Auxiliary Supply
Use Scenario: 5 V/0.5 A auxiliary supply for PLC analog input modules requiring reinforced isolation and low EMI. IC Role / Device Role / Timing Role: Low-duty-cycle switch in quasi-resonant flyback, leveraging body diode recovery (290 ns) for zero-voltage switching. Use Value: 2.4 pF Crss minimizes capacitive coupling into control circuitry, reducing common-mode noise injection into sensitive analog sections.	Use Scenario: 12 V/0.3 A isolated bias supply for patient-connected monitoring equipment meeting IEC 60601-1 creepage requirements. IC Role / Device Role / Timing Role: High-reliability primary switch in medical-grade flyback converter with 10-year lifetime target. Use Value: Fully characterized R_thJA = 50 °C/W (PCB mount) and -55 to +150 °C operating range ensure stable performance across environmental stress screening.

AC-DC Adapter

LED Driver

Use Scenario: 5–12 W isolated wall adapter with universal AC input and constant-voltage output.

IC Role / Device Role / Timing Role: Primary-side high-side switch in DCM flyback topology, operating at 65–100 kHz with valley switching.

Use Value: 600 V rating accommodates 380 V DC bus with margin; 7.0 Ω R_DS(on) limits conduction loss to <150 mW at 1.4 A peak, enabling >82% efficiency.

Use Scenario: Constant-current LED driver for commercial downlights with surge immunity to 2 kV line transients.

IC Role / Device Role / Timing Role: Main switching element in primary-side regulated flyback, handling 1.4 A pulsed drain current during LED string regulation.

Use Value: 93 mJ E_AS absorbs transformer leakage energy during overvoltage events, eliminating need for TVS clamping on primary.

Industrial Sensor Power

Medical Auxiliary Supply

Use Scenario: 5 V/0.5 A auxiliary supply for PLC analog input modules requiring reinforced isolation and low EMI.

IC Role / Device Role / Timing Role: Low-duty-cycle switch in quasi-resonant flyback, leveraging body diode recovery (290 ns) for zero-voltage switching.

Use Value: 2.4 pF Crss minimizes capacitive coupling into control circuitry, reducing common-mode noise injection into sensitive analog sections.

Use Scenario: 12 V/0.3 A isolated bias supply for patient-connected monitoring equipment meeting IEC 60601-1 creepage requirements.

IC Role / Device Role / Timing Role: High-reliability primary switch in medical-grade flyback converter with 10-year lifetime target.

Use Value: Fully characterized R_thJA = 50 °C/W (PCB mount) and -55 to +150 °C operating range ensure stable performance across environmental stress screening.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V, 1.15 A, R_DS(on) = 8.5 Ω, Q_g = 12 nC, TO-220 package	Higher R_DS(on) increases conduction loss; through-hole mounting requires larger board area	Prefer when legacy through-hole assembly or higher avalanche current (I_AR = 1.15 A) is prioritized over thermal density
IXTP1R1N60P	600 V, 1.1 A, R_DS(on) = 7.5 Ω, Q_g = 10.5 nC, TO-220FP package	Lower Q_g improves switching efficiency but reduced I_D rating limits power scalability	Select for space-constrained designs needing lower gate drive burden, accepting 0.3 A lower continuous current

Compared with STP1NK60Z and IXTP1R1N60P, IRFR1N60ATRPBF-BE3 offers the highest continuous current (1.4 A) in surface-mount DPAK, optimal thermal resistance (R_thJC = 3.5 °C/W), and best balance of Q_g and avalanche robustness for compact, high-reliability flyback converters.

Availability

IRFR1N60ATRPBF-BE3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, industrial sensor power supplies, and medical auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFR1N60ATRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRFR1N60ATRPBF-BE3 belongs to Vishay's high-voltage planar MOSFET product line, engineered for cost-effective, thermally efficient switching in low-power offline SMPS where ruggedness and consistent parametric performance are essential.

FAQ

What is the maximum continuous drain current for IRFR1N60ATRPBF-BE3 at 100 °C case temperature?

The IRFR1N60ATRPBF-BE3 supports 0.89 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.28 W/°C and 36 W maximum power dissipation at 25 °C. This value ensures safe operation in enclosed environments where case temperature exceeds ambient by 75 °C.

Does IRFR1N60ATRPBF-BE3 require a gate resistor for stable switching in flyback applications?

Yes, IRFR1N60ATRPBF-BE3 benefits from a 2.15 Ω gate resistor (as tested in datasheet fig. 10) to control dV/dt and suppress oscillation during turn-on/turn-off. This value balances switching speed (t_d(on) = 9.8 ns) against ringing risk, especially with parasitic inductance in high-frequency QR flyback layouts.

Can IRFR1N60ATRPBF-BE3 be used in place of IRFR1N60APbF-BE3?

Yes, IRFR1N60ATRPBF-BE3 is the lead (Pb)-free and halogen-free version of IRFR1N60APbF-BE3, sharing identical electrical specifications, thermal performance, and DPAK package dimensions. The "-TRPBF" suffix denotes tape-and-reel packaging with RoHS-compliant finish, suitable for automated SMT assembly.

What is the body diode forward voltage of IRFR1N60ATRPBF-BE3 at 1.4 A and 25 °C?

The body diode forward voltage of IRFR1N60ATRPBF-BE3 is 1.6 V at I_S = 1.4 A and T_J = 25 °C, measured with V_GS = 0 V. This parameter directly impacts conduction loss during transformer reset phase in DCM flyback, contributing ~2.24 W peak dissipation if sustained.

How does the 3.5 °C/W junction-to-case thermal resistance of IRFR1N60ATRPBF-BE3 impact PCB layout?

The 3.5 °C/W R_thJC of IRFR1N60ATRPBF-BE3 mandates direct thermal connection of the exposed drain pad to ≥1"² of 2 oz copper pour on the PCB. Per Application Note 826, minimum recommended pad dimensions are 10.67 mm × 5.69 mm to achieve specified thermal performance without external heatsinking.

IRFR1N60ATRPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR1N60ATRPBF-BE3 FAQ

1.How can I place an order for IRFR1N60ATRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1N60ATRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1N60ATRPBF-BE3 reliable?

The price and inventory of IRFR1N60ATRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60ATRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR1N60ATRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60ATRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1N60ATRPBF-BE3?

IRFR1N60ATRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1N60ATRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1N60ATRPBF-BE3?

For technical support, including IRFR1N60ATRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60ATRPBF-BE3 requirements.

6.How does Aetrix verify that IRFR1N60ATRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR1N60ATRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60ATRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR1N60ATRPBF-BE3?

All IRFR1N60ATRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60ATRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1N60ATRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR1N60ATRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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