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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR1N60ATRR

Name: IRFR1N60ATRR
Brand: Vishay Siliconix
SKU: IRFR1N60ATRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1N60ATRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1N60ATRR.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

IRFR1N60ATRR from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage switching in flyback SMPS and PFC stages.

For engineers reviewing the IRFR1N60ATRR datasheet, IRFR1N60ATRR pinout, IRFR1N60ATRR application, or IRFR1N60ATRR equivalent, this device is evaluated for unclamped inductive switching robustness, body diode recovery performance (t_rr = 290–440 ns), thermal resistance (R_thJC = 3.5 °C/W), and PCB-mount power dissipation (50 °C/W).

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage, low-current switching. Its gate structure delivers low Q_g (14 nC) and controlled Q_gd/Q_gs ratio (8.1/2.7 nC), enabling fast, stable turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.

The integrated body diode supports continuous 1.4 A source-drain current with V_SD = 1.6 V at T_J = 25 °C and exhibits characterized reverse recovery (Q_rr = 510–760 μC), making it suitable for discontinuous conduction mode (DCM) flyback converters where diode conduction occurs during MOSFET off-time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in PFC and flyback applications with margin for voltage spikes.
R_DS(on) max	7.0 Ω at V_GS = 10 V - Sets conduction loss ceiling of ~9.8 W at 1.4 A, defining thermal design requirements on PCB.
Q_g max	14 nC - Determines gate driver current demand (~1.4 mA avg. for 100 kHz switching with 10 V swing).
E_AS	93 mJ - Enables reliable operation under unclamped inductive load conditions without external snubbers.
t_rr	290–440 ns - Limits diode reverse recovery losses and EMI generation during hard commutation.
R_thJC	3.5 °C/W - Allows direct heatsinking via drain pad; junction-to-case thermal path dominates thermal management.
I_D cont @ T_C = 100 °C	0.89 A - Defines maximum sustained current when mounted on thermally constrained PCBs.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compliant with JEDEC MO-238.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V drive to fully enhance channel; requires <2.7 nC charge to reach threshold, minimizing driver stress.
D (Drain)	High-side power terminal	Connected to PCB thermal pad; carries full switched current and must be routed with low-inductance layout for dV/dt stability.
S (Source)	Reference and return path	Serves as local ground reference for gate drive; source inductance directly impacts switching speed and ringing.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	14 nC total / 8.1 nC Miller charge → improves switching controllability and reduces risk of false turn-on in high-dV/dt environments.
Characterized avalanche capability	93 mJ single-pulse E_AS with validated test circuit → enables robustness against transformer leakage energy without external clamping.
Specified body diode recovery	t_rr = 290–440 ns and Q_rr = 510–760 μC → allows predictable loss calculation and EMI filtering in DCM flyback designs.
Thermally enhanced DPAK	R_thJC = 3.5 °C/W → supports >3 W continuous dissipation with minimal heatsink area when drain pad is soldered to ≥1"² copper.
High dV/dt ruggedness	3.8 V/ns peak diode recovery dV/dt rating → ensures stable operation during fast voltage transitions across drain-source.

Applications

AC-DC Flyback Converter	Active PFC Pre-regulator
Use Scenario: Low-power offline adapter (<15 W) operating in discontinuous conduction mode with universal input (85–265 V_AC). IC Role / Device Role: Primary-side high-side switch handling 400–480 V DC link voltage and 1.4 A peak drain current. Use Value: 600 V V_DS rating provides 20 % margin over 480 V bus; low Q_g enables simple gate drive with low-cost controller ICs.	Use Scenario: Boost-type active power factor correction stage in industrial power supplies (200–500 W). IC Role / Device Role: Switching element in boost converter topology, conducting 0.89 A continuously at 100 °C case temperature. Use Value: Specified R_DS(on) and thermal resistance allow accurate junction temperature prediction; avalanche rating absorbs boost inductor energy during fault events.
UPS Inverter Stage	LED Driver Power Switch
Use Scenario: High-efficiency standby inverter in line-interactive UPS systems, switching at 50–100 kHz. IC Role / Device Role: Low-duty-cycle switching transistor managing battery-to-AC conversion with bidirectional body diode conduction. Use Value: Body diode V_SD = 1.6 V and t_rr spec enable efficient freewheeling; 150 °C max T_J supports sealed enclosure operation.	Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300–400 V input. IC Role / Device Role: Main switching FET regulating LED string current up to 1.4 A with high-voltage isolation. Use Value: 7.0 Ω R_DS(on) limits conduction loss to <1.4 W at rated current; DPAK footprint simplifies thermal layout on metal-core PCBs.

AC-DC Flyback Converter

Active PFC Pre-regulator

Use Scenario: Low-power offline adapter (<15 W) operating in discontinuous conduction mode with universal input (85–265 V_AC).

IC Role / Device Role: Primary-side high-side switch handling 400–480 V DC link voltage and 1.4 A peak drain current.

Use Value: 600 V V_DS rating provides 20 % margin over 480 V bus; low Q_g enables simple gate drive with low-cost controller ICs.

Use Scenario: Boost-type active power factor correction stage in industrial power supplies (200–500 W).

IC Role / Device Role: Switching element in boost converter topology, conducting 0.89 A continuously at 100 °C case temperature.

Use Value: Specified R_DS(on) and thermal resistance allow accurate junction temperature prediction; avalanche rating absorbs boost inductor energy during fault events.

UPS Inverter Stage

LED Driver Power Switch

Use Scenario: High-efficiency standby inverter in line-interactive UPS systems, switching at 50–100 kHz.

IC Role / Device Role: Low-duty-cycle switching transistor managing battery-to-AC conversion with bidirectional body diode conduction.

Use Value: Body diode V_SD = 1.6 V and t_rr spec enable efficient freewheeling; 150 °C max T_J supports sealed enclosure operation.

Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300–400 V input.

IC Role / Device Role: Main switching FET regulating LED string current up to 1.4 A with high-voltage isolation.

Use Value: 7.0 Ω R_DS(on) limits conduction loss to <1.4 W at rated current; DPAK footprint simplifies thermal layout on metal-core PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR1N60APbF	Same silicon die and specs; Pb-containing termination vs. Pb-free GE3 plating on IRFR1N60ATRR.	No functional difference; selected where RoHS exemption applies or legacy assembly process requires SnPb solder compatibility.	Choose IRFR1N60APbF only if Pb-based reflow is mandated; otherwise IRFR1N60ATRR meets modern environmental compliance.
SiHFR1N60ATRR-GE3	Identical Vishay part number prefix (SiHF vs. IRF), same DPAK package, identical electrical specs per datasheet S21-0466.	No application difference - dual-sourced variant with identical qualification and reliability data.	Select SiHFR1N60ATRR-GE3 for supply chain diversification while maintaining full form-fit-function equivalence.

Compared with IRFR1N60APbF, IRFR1N60ATRR offers RoHS-compliant termination without altering thermal or switching performance; versus SiHFR1N60ATRR-GE3, it shares identical silicon, package, and characterization - differing only in branding and orderable part family designation.

Availability

IRFR1N60ATRR is available at Aetrix Electronics and suitable for AC-DC flyback converters, active PFC pre-regulators, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term industrial availability.

Supply support for IRFR1N60ATRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-voltage, and thermally optimized devices.

The IRFR1N60ATRR belongs to Vishay's high-voltage N-channel power MOSFET product line, engineered for efficiency-critical, space-constrained offline power conversion in industrial and computing applications.

FAQ

What is the maximum continuous drain current for IRFR1N60ATRR at 100 °C case temperature?

The IRFR1N60ATRR supports 0.89 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case resistance (3.5 °C/W) and ambient constraints; exceeding it risks exceeding the 150 °C maximum junction temperature.

Does IRFR1N60ATRR have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRFR1N60ATRR features a fully characterized intrinsic body diode with t_rr = 290–440 ns and Q_rr = 510–760 μC at T_J = 25 °C, IF = 1.4 A, and dI/dt = 100 A/μs. These values are measured per standardized test conditions and enable precise loss modeling in flyback and boost topologies.

What package type and mounting considerations apply to IRFR1N60ATRR?

The IRFR1N60ATRR uses the DPAK (TO-252) package with an exposed drain pad that must be soldered to a minimum 1"² FR-4 PCB copper area for optimal thermal performance. Recommended pad dimensions are 10.67 mm × 5.69 mm per Vishay Application Note 826, and the drain pad serves as both thermal path and electrical connection.

Can IRFR1N60ATRR be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRFR1N60ATRR is fully characterized for repetitive and single-pulse avalanche operation. Its rated single-pulse avalanche energy (E_AS) is 93 mJ under defined test conditions (L = 95 mH, R_g = 25 Ω, I_AS = 1.4 A), verified per Figure 12 in datasheet S21-0466-Rev. E.

How does the gate charge profile of IRFR1N60ATRR impact driver selection?

The IRFR1N60ATRR has Q_g = 14 nC, Q_gs = 2.7 nC, and Q_gd = 8.1 nC, indicating strong Miller effect dominance. A gate driver capable of sourcing/sinking ≥1 A peak is recommended to achieve sub-20 ns rise/fall times; insufficient drive current increases switching losses and thermal stress on the IRFR1N60ATRR.

IRFR1N60ATRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR1N60ATRR FAQ

1.How can I place an order for IRFR1N60ATRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1N60ATRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1N60ATRR reliable?

The price and inventory of IRFR1N60ATRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60ATRR is usually 5 days.

3.What payment methods are accepted for IRFR1N60ATRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60ATRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1N60ATRR?

IRFR1N60ATRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1N60ATRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1N60ATRR?

For technical support, including IRFR1N60ATRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60ATRR requirements.

6.How does Aetrix verify that IRFR1N60ATRR is sourced from the original manufacturer or authorized distributors?

All IRFR1N60ATRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60ATRR meets industry standards.

7.What is the process for return or replacement of IRFR1N60ATRR?

All IRFR1N60ATRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60ATRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1N60ATRR part is unused and in its original packaging.

Return procedure for IRFR1N60ATRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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