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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR1N60ATRRPBF

Name: IRFR1N60ATRRPBF
Brand: Vishay Siliconix
SKU: IRFR1N60ATRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1N60ATRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1N60ATRRPBF.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

IRFR1N60ATRRPBF from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS primary-side circuits.

For engineers reviewing the IRFR1N60ATRRPBF datasheet, IRFR1N60ATRRPBF pinout, IRFR1N60ATRRPBF application, or IRFR1N60ATRRPBF equivalent, key selection criteria include its 600 V blocking rating, low Q_g/Q_gd ratio for fast hard-switching, robust dV/dt immunity (3.8 V/ns), and validated unclamped inductive switching capability under 1.4 A I_AS.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche performance and dynamic dV/dt ruggedness. Its gate structure minimizes Miller capacitance (C_rss = 2.4 pF) and supports stable operation up to 150 °C junction temperature.

The device integrates a body diode with 290–440 ns reverse recovery time (t_rr) and 510–760 μC Q_rr, enabling reliable freewheeling in discontinuous conduction mode (DCM) flyback topologies without external snubbing in low-power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input (85–265 V_AC) flyback converters with ≥2× safety margin
R_DS(on) max	7.0 Ω at V_GS = 10 V - enables <1 W conduction loss at 1.4 A DC, suitable for ≤15 W output power levels
Q_g max	14 nC - allows direct drive from low-current PWM controllers (e.g., UC3842/UC2842) without gate driver buffering
E_AS	93 mJ - withstands unclamped inductive energy during startup/fault without failure, critical for transformer-coupled topologies
t_r/t_f	14 ns / 20 ns - ensures minimal switching transition losses in 65–130 kHz SMPS operating range
R_thJC	3.5 °C/W - enables >1 W power dissipation with modest heatsinking on PCB copper pour
I_D cont @ T_C = 100 °C	0.89 A - defines thermal-limited continuous current when mounted on standard FR-4 with 1"² copper area

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-voltage isolation and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 229 pF) reduces driver loading
D (Drain)	High-voltage power terminal	Connected to transformer primary and HV rail; electrically tied to exposed backside thermal pad
S (Source)	Reference and return path	Common node for gate drive reference and current sensing; ties to power ground in flyback primary side

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	14 nC / 8.1 nC - improves switching speed control and reduces Miller-induced turn-on risk in high-dV/dt environments
Characterized avalanche capability	93 mJ E_AS - eliminates need for external clamping in cost-sensitive flyback designs with predictable leakage inductance
Enhanced dV/dt immunity	3.8 V/ns peak diode recovery dV/dt - prevents false triggering during transformer reset in high-frequency operation
Thermally efficient DPAK	R_thJC = 3.5 °C/W - enables >1.5 W dissipation using only PCB copper, reducing heatsink dependency
Body diode Q_rr specification	510–760 μC - allows accurate loss modeling for DCM flyback freewheeling phase and EMI prediction

Applications

AC-DC Adapter Primary Switch	LED Driver Flyback Controller
Use Scenario: 12 V/1 A universal-input offline adapter powering consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-side switch synchronizing with UC3842 controller at 65 kHz; handles 480 V transient spikes during line surges. Use Value: 600 V V_DS rating and 93 mJ E_AS ensure no avalanche failure during cold-start or overvoltage events without snubber.	Use Scenario: Isolated constant-current LED driver for architectural lighting (24 V/350 mA output). IC Role / Device Role / Timing Role: Main power switch in DCM flyback; body diode conducts during transformer reset with controlled t_rr = 290–440 ns. Use Value: Low Q_g (14 nC) enables direct drive from low-power PWM ICs; C_oss = 32.6 pF minimizes capacitive turn-off loss.
UPS Hold-Up Circuit Switch	PFC Pre-regulator Stage
Use Scenario: 24 V backup supply maintaining RAM state during brief AC outages in industrial PLCs. IC Role / Device Role / Timing Role: High-voltage switch isolating battery bank from main DC bus; operates in linear mode during brownout transitions. Use Value: R_DS(on) = 7.0 Ω and SOA curve support safe linear operation up to 100 °C case temperature with 1"² PCB copper.	Use Scenario: 75 W active PFC boost stage in medical-grade power supplies requiring Class B EMI compliance. IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz; body diode reverse recovery managed via ZVS-assisted gate timing. Use Value: Specified Q_rr (510–760 μC) and t_rr enable precise dead-time optimization to reduce EMI and diode stress.

AC-DC Adapter Primary Switch

LED Driver Flyback Controller

Use Scenario: 12 V/1 A universal-input offline adapter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-side switch synchronizing with UC3842 controller at 65 kHz; handles 480 V transient spikes during line surges.

Use Value: 600 V V_DS rating and 93 mJ E_AS ensure no avalanche failure during cold-start or overvoltage events without snubber.

Use Scenario: Isolated constant-current LED driver for architectural lighting (24 V/350 mA output).

IC Role / Device Role / Timing Role: Main power switch in DCM flyback; body diode conducts during transformer reset with controlled t_rr = 290–440 ns.

Use Value: Low Q_g (14 nC) enables direct drive from low-power PWM ICs; C_oss = 32.6 pF minimizes capacitive turn-off loss.

UPS Hold-Up Circuit Switch

PFC Pre-regulator Stage

Use Scenario: 24 V backup supply maintaining RAM state during brief AC outages in industrial PLCs.

IC Role / Device Role / Timing Role: High-voltage switch isolating battery bank from main DC bus; operates in linear mode during brownout transitions.

Use Value: R_DS(on) = 7.0 Ω and SOA curve support safe linear operation up to 100 °C case temperature with 1"² PCB copper.

Use Scenario: 75 W active PFC boost stage in medical-grade power supplies requiring Class B EMI compliance.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz; body diode reverse recovery managed via ZVS-assisted gate timing.

Use Value: Specified Q_rr (510–760 μC) and t_rr enable precise dead-time optimization to reduce EMI and diode stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	R_DS(on) = 7.5 Ω, Q_g = 12 nC, TO-220 package	Higher thermal resistance (R_thJC ≈ 2.5 °C/W but requires through-hole mounting); lower E_AS (60 mJ)	Preferred where board space permits through-hole assembly and lower gate charge is prioritized over avalanche margin.
FQP1N60CTF	R_DS(on) = 7.2 Ω, Q_g = 15 nC, TO-220FP package	Same voltage/current ratings but higher R_thJA (62 °C/W vs. 50 °C/W for IRFR1N60ATRRPBF on PCB); no specified E_AS	Acceptable for non-avalanche-critical designs where footprint compatibility with TO-220FP is required.

Compared with STP1NK60Z and FQP1N60CTF, IRFR1N60ATRRPBF offers superior avalanche ruggedness (93 mJ vs. ≤60 mJ), lower R_thJA in PCB-mount configuration (50 °C/W), and verified dV/dt immunity - making it the preferred choice for compact, high-reliability flyback converters where layout space and surge resilience are constrained.

Availability

IRFR1N60ATRRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply across industrial and medical OEM programs.

Supply support for IRFR1N60ATRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRFR1N60ATRRPBF belongs to Vishay's high-voltage power MOSFET product line, engineered for cost-effective, robust switching in low-to-mid power AC-DC conversion systems where avalanche tolerance and PCB-mount thermal efficiency are essential.

FAQ

What is the maximum continuous drain current for IRFR1N60ATRRPBF at 100 °C case temperature?

The maximum continuous drain current for IRFR1N60ATRRPBF is 0.89 A when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (3.5 °C/W) and must be validated with actual PCB copper area and airflow conditions. IRFR1N60ATRRPBF achieves this rating in DPAK package with standard FR-4 mounting.

Does IRFR1N60ATRRPBF support logic-level gate drive?

No, IRFR1N60ATRRPBF is not a logic-level MOSFET; its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 7.0 Ω. It is not guaranteed to operate reliably below 4.5 V gate drive. IRFR1N60ATRRPBF must be driven with a 10 V gate-source voltage for optimal conduction performance.

What is the body diode reverse recovery charge (Q_rr) specification for IRFR1N60ATRRPBF?

The body diode reverse recovery charge (Q_rr) for IRFR1N60ATRRPBF is specified as 510–760 μC under test conditions of T_J = 25 °C, I_F = 1.4 A, and dI/dt = 100 A/μs. This parameter is critical for estimating switching losses and EMI in flyback and boost topologies. IRFR1N60ATRRPBF provides this value explicitly in its datasheet, enabling accurate circuit simulation.

Can IRFR1N60ATRRPBF be used in avalanche mode repeatedly?

IRFR1N60ATRRPBF is rated for repetitive avalanche with I_AR = 1.4 A and E_AR = 3.6 mJ, but only under strictly limited pulse conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %) and with junction temperature monitored to stay within –55 °C to +150 °C. The device is primarily intended for normal switching; repeated avalanche operation requires careful thermal and timing design. IRFR1N60ATRRPBF data sheet defines these limits precisely in the Absolute Maximum Ratings section.

What is the recommended PCB pad layout for IRFR1N60ATRRPBF in DPAK package?

Vishay recommends minimum PCB pads per Application Note 826: 0.224" × 0.180" (5.69 mm × 4.57 mm) for source and gate, and 0.243" × 0.420" (6.18 mm × 10.67 mm) for the drain thermal pad, with solder mask defined (SMD) stencil. These dimensions ensure mechanical reliability and thermal performance. IRFR1N60ATRRPBF's DPAK thermal pad must be fully soldered to maximize R_thJC benefit (3.5 °C/W).

IRFR1N60ATRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR1N60ATRRPBF FAQ

1.How can I place an order for IRFR1N60ATRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1N60ATRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1N60ATRRPBF reliable?

The price and inventory of IRFR1N60ATRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60ATRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR1N60ATRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60ATRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1N60ATRRPBF?

IRFR1N60ATRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1N60ATRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1N60ATRRPBF?

For technical support, including IRFR1N60ATRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60ATRRPBF requirements.

6.How does Aetrix verify that IRFR1N60ATRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1N60ATRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60ATRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR1N60ATRRPBF?

All IRFR1N60ATRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60ATRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1N60ATRRPBF part is unused and in its original packaging.

Return procedure for IRFR1N60ATRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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