Vishay Siliconix IRFR210
- Part No.:
- IRFR210
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR210.pdf
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,808
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Product details
Overview
IRFR210 from Vishay Siliconix is a 200 V, 2.6 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR210 datasheet, IRFR210 pinout, IRFR210 application, or IRFR210 equivalent, key selection considerations include its 200 V drain-source breakdown voltage, 25 W maximum power dissipation at TC = 25 °C, 5.0 V/ns peak diode recovery dV/dt capability, and suitability for fast-switching, ruggedized low-power switching applications requiring surface-mount assembly.
Technical Context
The IRFR210 is a third-generation planar vertical DMOS power MOSFET optimized for high-voltage, medium-current switching with enhanced ruggedness. Its design incorporates dynamic dV/dt immunity and unclamped inductive switching (UIS) capability up to 95 mJ, enabling reliable operation under transient overvoltage and inductive load conditions.
It operates as a single N-channel enhancement-mode device with gate threshold voltage of 2.0–4.0 V, zero gate voltage drain current ≤25 μA at VDS = 200 V, and body diode reverse recovery time of 150–310 ns-supporting synchronous rectification and freewheeling functions without external diodes in many topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC (e.g., universal AC/DC front-end or 150 V bus systems) |
| RDS(on) | 1.5 Ω @ VGS = 10 V - enables <1.0 W conduction loss at 0.8 A continuous drain current |
| Qg | 8.2 nC - determines gate drive energy requirement; compatible with standard logic-level drivers (e.g., TC442x) |
| EAS | 95 mJ - allows safe single-pulse inductive energy absorption without snubber in relay/motor drive circuits |
| TJ Range | −55 to +150 °C - qualified for extended industrial temperature operation including sealed enclosures |
| RthJC | 5.0 °C/W - enables 25 W power dissipation with modest heatsinking (e.g., 10 cm² copper pour) |
| dV/dt Rating | 5.0 V/ns - suppresses false turn-on during high-speed switching in noisy environments |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S) aligned to JEDEC MO-238 standard; recommended minimum PCB pad layout per Vishay Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal to fully enhance channel; requires <8.2 nC charge for full turn-on |
| D (Drain) | High-side power terminal | Connected to exposed metal tab; electrically and thermally tied to PCB copper pour for heat dissipation |
| S (Source) | Reference and return path | Serves as local ground reference for gate drive; source inductance LS = 7.5 nH affects switching waveform ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation under repeated inductive switching stress (EAR = 2.5 mJ), eliminating need for external clamping in many motor gate drives |
| Dynamic dV/dt rating | 5.0 V/ns immunity prevents spurious turn-on during fast voltage transients in half-bridge or flyback configurations |
| Surface-mount DPAK | Compatible with vapor-phase and IR reflow; 6.35 mm × 6.73 mm footprint supports high-density PCB layouts |
| Fast switching | Turn-on delay 8.2 ns, rise time 17 ns, fall time 8.9 ns - reduces switching losses below 100 kHz operation |
| Low Qgd/Qg ratio | 4.5/8.2 ≈ 55% - improves Miller immunity and hard-switching stability in high-side configurations |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down (buck) regulator in industrial sensor node power supply, operating at 50–100 kHz with 12–48 V input. IC Role / Device Role / Timing Role: High-side synchronous switch controlling energy transfer to output inductor; duty cycle modulated by PWM controller. Use Value: 1.5 Ω RDS(on) limits conduction loss to <1.0 W at 0.8 A load; 8.2 nC Qg ensures clean 100 ns total switching transition. | Use Scenario: H-bridge half-leg driving 24 V, 1.5 A brushed DC motor in automated valve actuator. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current; body diode provides freewheeling path during off-time. Use Value: 150–310 ns trr and 2.0 V VSD minimize freewheeling loss and EMI; 2.6 A IS rating matches motor stall current. |
| AC-DC Auxiliary Supply | LED Constant-Current Driver |
Use Scenario: Discrete flyback switch in 5 W auxiliary supply for PLC I/O module, operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side power switch regulating isolated output via optocoupler feedback loop. Use Value: 95 mJ EAS withstands leakage inductance spikes without snubber; 200 V VDS accommodates reflected flyback voltage + margin. | Use Scenario: Constant-current buck switch driving 12 V, 350 mA LED string in smart lighting fixture. IC Role / Device Role / Timing Role: PWM-controlled current regulator switch; current sensed via low-side shunt resistor. Use Value: 2.6 A pulsed drain rating supports 10× overcurrent headroom; 5.0 V/ns dV/dt rating prevents false triggering from LED string voltage transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR210PbF | Same VDS (200 V), lower RDS(on) (1.2 Ω), higher Qg (10.5 nC), same DPAK package | Better conduction efficiency at >1 A, but higher gate drive demand and slightly slower switching | Select IRFR210 when prioritizing gate drive simplicity and dV/dt immunity over minimal RDS(on) |
| SiHFR210-GE3 | Identical electrical specs and DPAK package; halogen-free, RoHS-compliant variant from same Vishay family | No functional difference; required for lead-free/halogen-free compliance programs | Choose SiHFR210-GE3 for new designs targeting IPC-1752A environmental compliance |
Compared with IRFR210, the IRLR210PbF offers lower on-resistance but demands more gate drive energy and exhibits reduced dV/dt immunity, while the SiHFR210-GE3 is a drop-in compliant replacement with identical performance-making IRFR210 optimal for cost-sensitive, non-halogen-restricted industrial controls where proven legacy qualification matters.
Availability
IRFR210 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for IRFR210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR210 belongs to Vishay's third-generation power MOSFET product line, engineered for ruggedized fast-switching applications where avalanche capability, surface-mount reliability, and consistent parametric performance are critical.
FAQ
What is the maximum continuous drain current for IRFR210 at 100 °C case temperature?
The IRFR210 supports 1.7 A continuous drain current at TC = 100 °C, derated linearly from 2.6 A at 25 °C using a factor of 0.20 W/°C. This reflects thermal limitation of the DPAK package-not silicon capability-and assumes proper PCB copper area per Vishay's recommended 1" square FR-4 layout.
Does IRFR210 have a built-in body diode, and what are its key parameters?
Yes, the IRFR210 integrates a parasitic body diode with 2.6 A continuous forward current rating (IS), 2.0 V forward voltage (VSD) at 2.6 A and 25 °C, and reverse recovery time of 150–310 ns. These values are confirmed in the "Drain-source body diode characteristics" section of the Vishay datasheet S21-0373-Rev. F.
Is IRFR210 suitable for logic-level gate drive without a dedicated driver IC?
No-IRFR210 has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (RDS(on) = 1.5 Ω). While it may partially turn on with 5 V logic, it will operate in linear region with excessive power loss; a 10 V gate driver (e.g., MIC442x) is required for efficient switching in the IRFR210 application.
What is the thermal resistance from junction to ambient for IRFR210 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR210 exhibits RthJA = 50 °C/W. This value enables 2.5 W maximum power dissipation at TA = 25 °C and is validated in the "Thermal Resistance Ratings" table of the official Vishay datasheet.
Can IRFR210 replace IRFU210 in an existing through-hole design?
No-IRFR210 uses DPAK (TO-252) surface-mount packaging, while IRFU210 uses IPAK (TO-251) straight-lead through-hole packaging. They share identical electrical specs but differ mechanically; direct replacement would require PCB redesign. For drop-in through-hole alternatives, consider IRFU210PbF or SiHFU210-GE3 instead of IRFR210.
IRFR210 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR210 FAQ
1.How can I place an order for IRFR210 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR210 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR210 reliable?
The price and inventory of IRFR210 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210 is usually 5 days.
3.What payment methods are accepted for IRFR210?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR210?
IRFR210 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR210 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR210?
For technical support, including IRFR210 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210 requirements.
6.How does Aetrix verify that IRFR210 is sourced from the original manufacturer or authorized distributors?
All IRFR210 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210 meets industry standards.
7.What is the process for return or replacement of IRFR210?
All IRFR210 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR210 part is unused and in its original packaging.
Return procedure for IRFR210:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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