Vishay Siliconix IRFR210PBF-BE3
- Part No.:
- IRFR210PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR210PBF-BE3.pdf
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,984
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Product details
Overview
IRFR210PBF-BE3 from Vishay Siliconix is a 200 V, 2.6 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR210PBF-BE3 datasheet, IRFR210PBF-BE3 pinout, IRFR210PBF-BE3 application, or IRFR210PBF-BE3 equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 25 W maximum power dissipation at TC = 25 °C, 5.0 V/ns peak diode recovery dV/dt capability, and compatibility with vapor-phase and infrared reflow soldering processes.
Technical Context
This MOSFET employs third-generation trench-gate silicon technology optimized for fast switching and ruggedized operation under unclamped inductive load conditions. Its dynamic dV/dt rating and 95 mJ single-pulse avalanche energy support reliable operation in hard-switched topologies without external snubbers.
The device integrates a low-Qgd/Qg ratio (4.5/8.2 ≈ 55%) to minimize Miller-induced turn-off delay, while its 140 pF input capacitance and 53 pF output capacitance enable predictable gate drive design at frequencies up to several hundred kHz in buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 V DC bus designs with 15 % margin for transients |
| RDS(on) | 1.5 Ω @ VGS = 10 V - delivers ≤ 6.24 W conduction loss at 2.6 A continuous current |
| Qg | 8.2 nC - requires ≤ 0.82 µC gate drive per 100 kHz switching cycle at 10 V |
| EAS | 95 mJ - withstands unclamped inductive energy spikes without failure in relay drivers or solenoid controls |
| TJ Range | –55 °C to +150 °C - enables operation in automotive under-hood and industrial ambient environments |
| RthJC | 5.0 °C/W - allows direct heatsinking to PCB copper pour or external metal slug for thermal management |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction and mechanical anchoring; 3-terminal configuration (G, D, S) compatible with IPC-7351B footprint "DPAK_SMD".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 1.8 nC Qgs ensures rapid turn-on with standard gate drivers |
| D (Drain) | High-side power terminal | Connected to PCB thermal pad; carries full load current and dissipates heat via case-to-PCB path |
| S (Source) | Reference and return path | Provides ground reference for gate drive; internal source inductance (7.5 nH) affects high-dI/dt ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.5 mJ per pulse - enables robust operation in flyback and boost converters with variable load dynamics |
| Dynamic dV/dt rating | 5.0 V/ns - suppresses false turn-on during high-speed switching in noisy industrial environments |
| Fast switching | td(on) = 8.2 ns, tr = 17 ns - reduces switching losses below 200 kHz in SMPS applications |
| Surface-mount (DPAK) | Compatible with automated pick-and-place and IR/vapor-phase reflow - eliminates through-hole assembly cost |
| Low RDS(on) × Qg | 12.3 Ω·nC figure-of-merit - balances conduction and switching loss trade-offs in medium-frequency power stages |
Applications
| DC-DC Converter Switch | Motor Driver High-Side |
|---|---|
Use Scenario: Primary switch in 12 V–48 V input synchronous buck converter delivering up to 3 A to FPGA core rails. IC Role / Device Role / Timing Role: Power switching element controlling duty-cycle-modulated energy transfer from input to output capacitor. Use Value: 1.5 Ω RDS(on) limits I²R loss to < 12 mW at 100 mA bias; 8.2 nC Qg enables clean 500 kHz PWM edge transitions. | Use Scenario: High-side driver in 24 V brushed DC motor control for HVAC actuators and valve positioning. IC Role / Device Role / Timing Role: Load-switching transistor enabling bidirectional current flow when paired with low-side complement. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; 200 V VDS accommodates back-EMF peaks > 150 V. |
| LED Constant-Current Driver | Industrial Relay Replacement |
Use Scenario: Series-pass switch regulating constant current to high-brightness LED strings in streetlight drivers. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator operating in saturation or switching mode. Use Value: 150 °C max junction temperature supports sealed outdoor enclosures; 2.6 A continuous ID handles 2 A LED loads with 30 % derating. | Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules switching 24 V DC solenoids and indicators. IC Role / Device Role / Timing Role: Low-latency, wear-free load switch activated by microcontroller GPIO. Use Value: 95 mJ EAS safely clamps inductive turn-off energy; TO-252 footprint simplifies retrofit onto legacy relay PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220PBF | Higher VDS = 250 V, RDS(on) = 2.2 Ω @ 10 V, Qg = 10.5 nC | Lower conduction efficiency at 2.6 A but higher transient voltage margin | Select when system must survive > 200 V line surges or operate with wider input voltage range |
| SiHFR210-GE3 | Same die, halogen-free packaging; identical RDS(on), Qg, and avalanche specs | No functional difference; RoHS-compliant alternative for green manufacturing programs | Choose for compliance-critical industrial or medical OEM builds requiring halogen-free certification |
Compared with IRFR220PBF, IRFR210PBF-BE3 offers lower conduction loss and faster switching but reduced overvoltage headroom; versus SiHFR210-GE3, it shares identical electrical performance while differing only in Pb-free plating process and facility code (BE3 vs GE3), making them functionally interchangeable in most production environments.
Availability
IRFR210PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and solid-state relay replacements requiring stable component supply across extended product lifecycles.
Supply support for IRFR210PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness for harsh-environment applications.
The IRFR210PBF-BE3 belongs to Vishay's third-generation power MOSFET family engineered for high-efficiency, high-reliability switching in industrial and commercial power systems where avalanche robustness and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR210PBF-BE3 at 100 °C case temperature?
The IRFR210PBF-BE3 supports 1.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C under full load.
Does IRFR210PBF-BE3 require a gate resistor for stable switching?
Yes, IRFR210PBF-BE3 benefits from an external gate resistor (typically 10–24 Ω) to dampen ringing caused by internal source inductance (7.5 nH) and gate-drain capacitance (15 pF). The datasheet specifies switching times using Rg = 24 Ω; omitting this resistor may cause overshoot, shoot-through, or oscillation in half-bridge configurations.
Can IRFR210PBF-BE3 be used in linear (analog) regulation mode?
IRFR210PBF-BE3 is not optimized for linear-mode operation due to limited Safe Operating Area (SOA) at high VDS and low current. Its SOA curve restricts simultaneous VDS > 50 V and ID > 1 A in DC conditions. For linear regulators, consider devices with extended SOA or dedicated LDO architectures instead of relying on IRFR210PBF-BE3.
What is the body diode reverse recovery time of IRFR210PBF-BE3?
The body diode reverse recovery time (trr) of IRFR210PBF-BE3 is 150–310 ns at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss in synchronous rectification and freewheeling paths; designers should account for trr-induced tail current when selecting complementary low-side switches or snubber components.
Is IRFR210PBF-BE3 compatible with lead-free reflow soldering profiles?
Yes, IRFR210PBF-BE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its DPAK package meets IPC-7351B land pattern recommendations, and the "-BE3" suffix confirms alternate manufacturing location qualification for Pb-free assembly. Thermal pad soldering must follow Vishay's recommended minimum pad layout (Document 72594).
IRFR210PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR210PBF-BE3 FAQ
1.How can I place an order for IRFR210PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR210PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR210PBF-BE3 reliable?
The price and inventory of IRFR210PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR210PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR210PBF-BE3?
IRFR210PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR210PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR210PBF-BE3?
For technical support, including IRFR210PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210PBF-BE3 requirements.
6.How does Aetrix verify that IRFR210PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR210PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR210PBF-BE3?
All IRFR210PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR210PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR210PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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