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Vishay Siliconix IRFR210TR
- Part No.:
- IRFR210TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR210TR.pdf
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,953
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Product details
Overview
IRFR210TR from Vishay Siliconix is a 200 V, 2.6 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating up to 2.5 mJ - designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR210TR datasheet, IRFR210TR pinout, IRFR210TR application, or IRFR210TR equivalent, key selection criteria include its 200 V VDS, 1.5 Ω on-resistance at 10 V drive, 2.6 A continuous drain current at TC = 25 °C, fast 8.2 ns turn-on delay, and DPAK thermal performance with RthJC = 5.0 °C/W.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and fast switching. It uses planar VDMOS technology with dynamic dV/dt rating of 5.0 V/ns and integral body diode with 150–310 ns reverse recovery time (trr), enabling reliable operation in inductive switching circuits.
The IRFR210TR is rated for repetitive avalanche energy (EAR = 2.5 mJ) and unclamped inductive switching (EAAS = 95 mJ), supporting robust overvoltage protection without external snubbers in flyback or buck converter topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin. |
| RDS(on) @ VGS = 10 V | 1.5 Ω max - enables low conduction loss in 2–3 A load-switching applications at ambient temperatures ≤ 85 °C. |
| ID continuous @ TC = 25 °C | 2.6 A - delivers stable output current in PCB-mounted DPAK configurations with ≥ 1"² copper area. |
| Qg | 8.2 nC max - allows efficient gate driving with standard 1 A peak drivers and < 10 ns switching transitions. |
| EAS | 95 mJ single-pulse - sustains unclamped inductive energy during startup/fault conditions without failure. |
| RthJC | 5.0 °C/W max - enables 25 W power dissipation when mounted on heatsink, critical for high-duty-cycle PWM stages. |
| Body diode VSD | 2.0 V max @ IS = 2.6 A - limits forward conduction loss during synchronous rectification or freewheeling phases. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive to fully enhance channel; requires < 8.2 nC charge for full turn-on. |
| D (Drain) | High-side power terminal | Connected to exposed backside metal pad; carries full load current and serves as primary thermal path to PCB copper. |
| S (Source) | Reference/return node | Provides signal ground reference for gate drive and current sensing; tied to source of driver IC in half-bridge layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.5 mJ EAR enables reliable operation under transient overvoltage without derating or external clamping. |
| Dynamic dV/dt rating | 5.0 V/ns immunity prevents false turn-on in high-noise motor drive or inverter environments. |
| Fast switching | 8.2 ns td(on), 17 ns tr, 14 ns td(off), 8.9 ns tf support >500 kHz PWM frequencies with minimal overlap loss. |
| Surface-mount (DPAK) | TO-252 footprint allows high-density layout, vapor-phase reflow compatibility, and 2.5 W PCB-mount power capability. |
| Low gate charge | 8.2 nC Qg reduces driver power consumption and simplifies gate drive design versus higher-Q alternatives. |
Applications
| DC-DC Converter Switch | Industrial Load Switch |
|---|---|
Use Scenario: High-efficiency 12 V–48 V input buck converter delivering 2 A at 5 V output in programmable power supply. IC Role / Device Role / Timing Role: Primary high-side switch operating at 300 kHz with synchronous rectification. Use Value: 1.5 Ω RDS(on) minimizes conduction loss; 8.2 nC Qg ensures clean 10 ns-scale transitions and low gate drive loss. |
Use Scenario: Remote-controlled 24 V DC load enable/disable in factory automation I/O module. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by microcontroller GPIO. Use Value: 2.6 A continuous rating supports solenoid/relay loads; avalanche rating protects against inductive kickback. |
| Motor Drive Half-Bridge | LED Driver Switch |
Use Scenario: 24 V brushed DC motor control in battery-powered tools using H-bridge with discrete FETs. IC Role / Device Role / Timing Role: Low-side switch in complementary pair with IRFR210TR on each leg. Use Value: Fast 17 ns rise time enables precise PWM duty control; 5.0 V/ns dV/dt immunity prevents shoot-through. |
Use Scenario: Constant-current LED string driver for signage with 36 V input and 2 A output. IC Role / Device Role / Timing Role: PWM dimming switch in buck topology controlling average LED current. Use Value: 200 V VDS accommodates LED string voltage plus ripple; body diode handles freewheeling current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR210PbF | Same VDS (200 V), lower RDS(on) (1.4 Ω), but 2.0 A ID rating and different gate threshold (1.0–2.5 V). | Optimized for logic-level drive (3.3 V/5 V); less suitable for 10 V gate drive systems requiring maximum current headroom. | Select IRFR210TR when 2.6 A continuous current and 10 V gate drive compatibility are required. |
| SiHFR210-GE3 | Identical VDS, RDS(on), ID, and package; halogen-free construction with GE3 suffix per Vishay material compliance. | No functional difference; used where RoHS/REACH-compliant materials are mandated beyond Pb-free requirements. | Choose SiHFR210-GE3 for strict environmental compliance programs without sacrificing electrical or thermal performance. |
Compared with IRFR210TR, IRFR210TR offers superior current rating over IRLR210PbF and identical performance to SiHFR210-GE3 while maintaining legacy Pb-free qualification - making it optimal for cost-sensitive industrial power designs requiring proven reliability and 10 V gate compatibility.
Availability
IRFR210TR is available at Aetrix Electronics and suitable for DC-DC converters, industrial load switches, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFR210TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR210TR belongs to Vishay's third-generation power MOSFET product line engineered for ruggedized switching, fast transition times, and cost-effective integration into surface-mount power conversion systems.
FAQ
What is the maximum continuous drain current for IRFR210TR at 100 °C case temperature?
The IRFR210TR supports 1.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the target application.
Does IRFR210TR have an integrated body diode, and what are its key parameters?
Yes, IRFR210TR includes an integral body diode with VSD = 2.0 V max at IS = 2.6 A and TJ = 25 °C, trr = 150–310 ns, and Qrr = 0.60–1.4 μC. These values enable use in freewheeling and synchronous rectification roles, though external Schottky diodes may be preferred for ultra-low VF requirements.
What is the gate-source threshold voltage range for IRFR210TR?
The IRFR210TR has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This confirms it is a standard-level MOSFET requiring ≥ 10 V gate drive for full enhancement, not a logic-level device.
Is IRFR210TR suitable for avalanche operation, and what energy levels are rated?
Yes, IRFR210TR is explicitly repetitive avalanche rated with EAR = 2.5 mJ and single-pulse EAS = 95 mJ. These ratings are validated per test condition VDD = 50 V, L = 28 mH, Rg = 25 Ω, and IAS = 2.6 A - confirming suitability for inductive switching without external protection in properly designed circuits.
What is the thermal resistance from junction to case (RthJC) for IRFR210TR?
The IRFR210TR has a maximum junction-to-case thermal resistance (RthJC) of 5.0 °C/W, measured from die to the exposed drain pad. This value enables direct thermal coupling to heatsinks or large PCB copper areas, supporting up to 25 W power dissipation when case temperature is maintained at 25 °C.
IRFR210TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR210TR FAQ
1.How can I place an order for IRFR210TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR210TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR210TR reliable?
The price and inventory of IRFR210TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TR is usually 5 days.
3.What payment methods are accepted for IRFR210TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR210TR?
IRFR210TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR210TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR210TR?
For technical support, including IRFR210TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TR requirements.
6.How does Aetrix verify that IRFR210TR is sourced from the original manufacturer or authorized distributors?
All IRFR210TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TR meets industry standards.
7.What is the process for return or replacement of IRFR210TR?
All IRFR210TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR210TR part is unused and in its original packaging.
Return procedure for IRFR210TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR210TR Tags
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