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Vishay Siliconix IRFR210TRLPBF

Part No.:
IRFR210TRLPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR210TRLPBF.pdf
Description:
MOSFET N-CH 200V 2.6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,671

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Product details

Overview

IRFR210TRLPBF from Vishay Siliconix is a 200 V, 2.6 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR210TRLPBF datasheet, IRFR210TRLPBF pinout, IRFR210TRLPBF application, or IRFR210TRLPBF equivalent, key selection criteria include its 200 V VDS, 1.5 Ω on-resistance, 2.5 W PCB-mount power dissipation, dV/dt ruggedness (5.0 V/ns), and DPAK thermal performance with RthJA = 50 °C/W on 1" FR-4 board.

Technical Context

This third-generation TrenchFET® MOSFET uses planar silicon process to deliver fast switching (tr = 17 ns, tf = 8.9 ns) with low gate charge (Qg = 8.2 nC) and controlled body diode recovery (trr = 150–310 ns, Qrr = 0.60–1.4 μC). Its dynamic dV/dt rating supports reliable operation in inductive switching environments.

The device integrates a robust intrinsic body diode rated for 2.6 A continuous source-drain current and 95 mJ single-pulse avalanche energy (EAS). Thermal design is enabled by RthJC = 5.0 °C/W and validated PCB-mount derating (0.020 W/°C above 25 °C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports input rails up to 160 V DC with margin for transients in offline and industrial SMPS
RDS(on)1.5 Ω @ VGS = 10 V - enables <1.0 W conduction loss at 0.8 A, suitable for low-current switching loads
Qg8.2 nC - allows efficient gate drive with standard 5–12 V logic-level controllers without excessive driver loss
ID (TC = 100 °C)1.7 A - defines maximum continuous current under thermally constrained PCB-mount conditions
EAS95 mJ - ensures unclamped inductive switching survival in relay drivers and solenoid controls
dV/dt Rating5.0 V/ns - provides immunity against false turn-on during high-slew-rate voltage transients
RthJA (PCB mount)50 °C/W - establishes thermal limit of 2.5 W max power on 1" FR-4 board at TA = 25 °C

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for automated assembly and PCB heat spreading.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeAccepts 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V ensures compatibility with microcontroller GPIO and dedicated gate drivers
D (Drain)High-side power outputConnected to internal die backside; electrically and thermally tied to exposed copper pad-requires thermal via array for heatsinking
S (Source)Reference node / return pathServes as common reference for gate drive and load current; body diode anode-critical for freewheeling path in buck and flyback topologies

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under unclamped inductive switching (EAR = 2.5 mJ), eliminating need for external snubbers in relay/solenoid drivers
Dynamic dV/dt rating5.0 V/ns immunity prevents spurious turn-on during fast voltage transients in motor phase-leg or half-bridge configurations
Surface-mount DPAKTO-252 footprint supports vapor-phase/reflow soldering; 1.5 mm profile fits space-constrained industrial PCBs
Low Qgd/Qg ratio4.5/8.2 ≈ 55% - improves Miller immunity and reduces switching instability in high-frequency PWM applications
Body diode trr & Qrrtrr = 150–310 ns, Qrr = 0.60–1.4 μC - enables clean commutation in synchronous rectification and bidirectional DC-DC stages

Applications

DC-DC Converter High-Side SwitchIndustrial Relay Driver

Use Scenario: Step-down converter in programmable logic controller (PLC) power module operating from 24–48 V DC input.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling power delivery to isolated 5 V/3.3 V auxiliary rails.

Use Value: 1.5 Ω RDS(on) limits conduction loss to <1.0 W at 0.8 A; DPAK thermal resistance enables stable operation without heatsink on 2-layer PCB.

Use Scenario: Solid-state replacement for electromechanical relays driving 24 V DC solenoids in factory automation I/O modules.

IC Role / Device Role / Timing Role: Low-duty-cycle load switch with integrated avalanche capability to absorb inductive kickback.

Use Value: 95 mJ EAS withstands repeated 24 V/2 A coil de-energization without external clamping; TO-252 footprint simplifies layout vs. through-hole alternatives.

Motor Phase Leg (Low-Power)LED Load Switch

Use Scenario: Half-bridge phase leg in 12 V brushed DC motor driver for HVAC actuators and valve positioners.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf = 8.9 ns) to minimize shoot-through risk during PWM commutation.

Use Value: 8.2 nC Qg allows clean gate drive with 100 Ω series resistor; body diode Qrr = 0.60–1.4 μC minimizes reverse recovery loss during freewheeling.

Use Scenario: Constant-current LED string switch in commercial lighting control panels with 24–48 V bus.

IC Role / Device Role / Timing Role: On/off control switch enabling precise dimming via upstream PWM controller.

Use Value: 200 V VDS accommodates surge margins on 48 V systems; 2.6 A ID supports up to 100 W LED loads with headroom for thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR210TRLPbFSame VDS (200 V), lower RDS(on) (1.2 Ω), higher Qg (10.5 nC), same DPAK packageBetter conduction efficiency but slower switching; suited for lower-frequency (<100 kHz) high-current loadsSelect when minimizing I²R loss dominates over switching loss-e.g., linear-regulated DC feeds
SiHFR210-GE3Identical electrical specs and DPAK package; halogen-free construction per Vishay's "GE3" suffixNo functional difference; meets RoHS 2011/65/EU and JEDEC JS709C material requirementsChoose for compliance-critical industrial or medical designs requiring halogen-free bill-of-materials

Compared with IRFR210TRLPBF, IRLR210TRLPbF trades higher gate charge for lower on-resistance-favoring conduction-limited applications-while SiHFR210-GE3 offers identical performance with halogen-free materials, making it ideal for environmentally regulated deployments without altering thermal or electrical design.

Availability

IRFR210TRLPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED lighting systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR210TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFR210TRLPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial, automotive, and telecom power systems where avalanche robustness and surface-mount compatibility are critical.

FAQ

What is the maximum continuous drain current for IRFR210TRLPBF at 100 °C case temperature?

The IRFR210TRLPBF supports 1.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 2.6 A rating at 25 °C and must be applied when designing for sustained operation in enclosed or high-ambient environments. The IRFR210TRLPBF's RthJC = 5.0 °C/W enables predictable junction temperature estimation using measured case temperature.

Does IRFR210TRLPBF require a gate resistor for safe operation?

Yes-the IRFR210TRLPBF benefits from a series gate resistor (typically 10–100 Ω) to dampen ringing, control dI/dt, and prevent oscillation during switching. With Qg = 8.2 nC and fast turn-on/turn-off times (td(on) = 8.2 ns, tf = 8.9 ns), an uncontrolled gate drive can excite parasitic inductance. The IRFR210TRLPBF gate-source leakage (±100 nA) and VGS(th) (2.0–4.0 V) further necessitate stable drive to avoid partial turn-on states.

Can IRFR210TRLPBF be used in avalanche mode repeatedly?

Yes-the IRFR210TRLPBF is explicitly rated for repetitive avalanche operation with EAR = 2.5 mJ per pulse (pulse width ≤ 300 μs, duty cycle ≤ 2 %). This capability is validated per test condition b in the datasheet (VDD = 50 V, L = 28 mH, Rg = 25 Ω, IAS = 2.6 A). Designers must ensure junction temperature remains below 150 °C during avalanche events, as confirmed by the IRFR210TRLPBF's thermal metrics and layout-dependent RthJA.

What is the recommended PCB pad layout for IRFR210TRLPBF in DPAK package?

Vishay recommends minimum pads per Application Note 826: 0.224" × 0.180" (5.69 mm × 4.57 mm) for source, 0.243" × 0.087" (6.18 mm × 2.20 mm) for drain, and 0.055" × 0.090" (1.397 mm × 2.286 mm) for gate. Thermal vias under the drain pad (≥6× 0.3 mm diameter) are essential to achieve the specified RthJA = 50 °C/W on 1" FR-4. The IRFR210TRLPBF's exposed drain requires solder mask defined pads to ensure full copper contact.

Is IRFR210TRLPBF compatible with lead-free reflow soldering processes?

Yes-the IRFR210TRLPBF is qualified for lead-free reflow per J-STD-020, with peak solder temperature up to 260 °C for 10 seconds. Its "PbF" suffix confirms lead-free termination, and the DPAK package withstands vapor phase, infrared, and wave soldering. The IRFR210TRLPBF's maximum storage temperature (−55 to +150 °C) and moisture sensitivity level (MSL 1) allow uncomplicated handling and assembly without baking requirements.

IRFR210TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR210TRLPBF FAQ

1.How can I place an order for IRFR210TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR210TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR210TRLPBF reliable?

The price and inventory of IRFR210TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR210TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR210TRLPBF?

IRFR210TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR210TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR210TRLPBF?

For technical support, including IRFR210TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRLPBF requirements.

6.How does Aetrix verify that IRFR210TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR210TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR210TRLPBF?

All IRFR210TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR210TRLPBF part is unused and in its original packaging.

Return procedure for IRFR210TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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