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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR210TRLPBF-BE3

Name: IRFR210TRLPBF-BE3
Brand: Vishay Siliconix
SKU: IRFR210TRLPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR210TRLPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR210TRLPBF-BE3.pdf

Description:: MOSFET N-CH 200V 2.6A DPAK

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Product details

Overview

IRFR210TRLPBF-BE3 from Vishay Siliconix is a 200 V, 2.6 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR210TRLPBF-BE3 datasheet, IRFR210TRLPBF-BE3 pinout, IRFR210TRLPBF-BE3 application, or IRFR210TRLPBF-BE3 equivalent, key selection criteria include its 200 V V_DS, 1.5 Ω on-resistance at 10 V drive, 2.6 A continuous drain current at T_C = 25 °C, avalanche energy rating of 95 mJ, and DPAK thermal performance with R_thJC = 5.0 °C/W.

Technical Context

This third-generation trench MOSFET uses silicon technology optimized for fast switching and ruggedized operation under repetitive avalanche stress. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, while low Q_gd/Q_g ratio (4.5/8.2 nC) enables efficient hard-switching with reduced Miller-induced turn-off delay.

The device integrates a robust body diode with 150–310 ns reverse recovery time and 0.60–1.4 μC Q_rr, enabling synchronous rectification and freewheeling in buck and flyback topologies without external Schottky supplementation in moderate-frequency designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin.
R_DS(on) @ V_GS = 10 V	1.5 Ω max - limits conduction loss to ≤6.3 W at 2.6 A, suitable for low-power switch-mode stages.
I_D (continuous, T_C = 25 °C)	2.6 A - defines maximum steady-state current with heatsink or PCB copper area meeting R_thJA ≤ 50 °C/W.
Q_g	8.2 nC max - determines gate driver current requirement (~0.82 mA avg at 100 kHz, 10 V swing).
E_AS	95 mJ - enables unclamped inductive switching survival in relay drivers or solenoid controls without snubbers.
R_thJC	5.0 °C/W max - allows ≥20 W power dissipation with modest heatsink (ΔT = 100 °C), critical for thermally constrained layouts.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard lead pitch of 2.29 mm (0.090"), body dimensions 6.22 × 6.73 × 1.78 mm (L × W × H), compliant with IPC-7351B footprint recommendations.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 1.8 nC Q_gs ensures rapid turn-on with minimal overshoot when driven by <10 Ω source impedance.
D (Drain)	High-side power terminal	Exposed metal pad (pin 2/3 shorted internally); primary thermal path to PCB ground plane or heatsink-must be soldered to ≥1"² copper area per Vishay recommendation.
S (Source)	Reference and return node	Low-inductance return path for load current; internal source inductance LS = 7.5 nH impacts high-dI/dt ringing and requires careful layout near gate driver.

Key Features

Feature	Design Value
Repetitive avalanche rated	2.5 mJ EAR enables reliable operation in inductive load switching without derating, validated per Fig. 11 test conditions.
Dynamic dV/dt rating	5.0 V/ns peak diode recovery dV/dt tolerance prevents false turn-on during fast voltage transients across drain-source.
Surface-mount (DPAK)	Compatible with vapor-phase and IR reflow; footprint matches JEDEC TO-252AA outline (Doc. 71197, Version 1/2).
Fast switching	Turn-on delay 8.2 ns + rise time 17 ns enables >500 kHz operation in hard-switched topologies with low switching loss.
Low Q_gd/Q_g ratio	4.5/8.2 ≈ 55% - reduces Miller plateau duration and improves controllability during transition, easing gate driver selection.

Applications

DC-DC Converter High-Side Switch	Industrial Motor Driver Half-Bridge
Use Scenario: 24 V input buck converter delivering 3.3 V/5 A to FPGA core logic in programmable logic controller (PLC) backplane. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive and 2.6 A peak load current. Use Value: 1.5 Ω R_DS(on) limits conduction loss to 10.1 W at full load, while 8.2 nC Q_g enables efficient gate driving with low-cost SOT-23 MOSFET drivers.	Use Scenario: 48 V BLDC motor commutation stage in HVAC fan module, where IRFR210TRLPBF-BE3 drives one leg of a half-bridge controlling 150 W brushless motor. IC Role / Device Role / Timing Role: Low-side switching element in 20 kHz PWM-controlled inverter, handling 2.6 A RMS phase current with body diode freewheeling. Use Value: 95 mJ E_AS withstands inductive kickback during PWM dead-time, eliminating need for external clamping diodes in cost-sensitive designs.
AC-DC Auxiliary Supply Switch	Programmable Load Switch
Use Scenario: 12 V auxiliary bias supply in 200 W server PSU, using flyback topology with discontinuous conduction mode (DCM). IC Role / Device Role / Timing Role: Primary-side power switch cycling at 65 kHz, subjected to 200 V drain stress and 2.6 A peak current pulses. Use Value: 200 V V_DS provides 30% margin over 170 V rectified line, while 150–310 ns trr ensures clean zero-voltage switching transitions without excessive diode loss.	Use Scenario: Hot-swap protection circuit for 24 V I/O module in industrial automation rack, requiring controlled inrush and fault isolation. IC Role / Device Role / Timing Role: Single-pole load switch activated via microcontroller GPIO, delivering up to 2.6 A with <100 ms turn-on time. Use Value: Gate threshold of 2.0–4.0 V ensures reliable turn-on from 3.3 V logic, and 2.5 W PCB-mount power dissipation supports sustained 2 A loads without heatsink.

DC-DC Converter High-Side Switch

Industrial Motor Driver Half-Bridge

Use Scenario: 24 V input buck converter delivering 3.3 V/5 A to FPGA core logic in programmable logic controller (PLC) backplane.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive and 2.6 A peak load current.

Use Value: 1.5 Ω R_DS(on) limits conduction loss to 10.1 W at full load, while 8.2 nC Q_g enables efficient gate driving with low-cost SOT-23 MOSFET drivers.

Use Scenario: 48 V BLDC motor commutation stage in HVAC fan module, where IRFR210TRLPBF-BE3 drives one leg of a half-bridge controlling 150 W brushless motor.

IC Role / Device Role / Timing Role: Low-side switching element in 20 kHz PWM-controlled inverter, handling 2.6 A RMS phase current with body diode freewheeling.

Use Value: 95 mJ E_AS withstands inductive kickback during PWM dead-time, eliminating need for external clamping diodes in cost-sensitive designs.

AC-DC Auxiliary Supply Switch

Programmable Load Switch

Use Scenario: 12 V auxiliary bias supply in 200 W server PSU, using flyback topology with discontinuous conduction mode (DCM).

IC Role / Device Role / Timing Role: Primary-side power switch cycling at 65 kHz, subjected to 200 V drain stress and 2.6 A peak current pulses.

Use Value: 200 V V_DS provides 30% margin over 170 V rectified line, while 150–310 ns trr ensures clean zero-voltage switching transitions without excessive diode loss.

Use Scenario: Hot-swap protection circuit for 24 V I/O module in industrial automation rack, requiring controlled inrush and fault isolation.

IC Role / Device Role / Timing Role: Single-pole load switch activated via microcontroller GPIO, delivering up to 2.6 A with <100 ms turn-on time.

Use Value: Gate threshold of 2.0–4.0 V ensures reliable turn-on from 3.3 V logic, and 2.5 W PCB-mount power dissipation supports sustained 2 A loads without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR210PbF	Same V_DS (200 V), identical R_DS(on) (1.5 Ω), but lower Q_g (6.8 nC) and higher I_D (3.0 A at T_C = 25 °C).	Better suited for higher-frequency (>1 MHz) or higher-current (≥3 A) applications due to reduced gate charge and increased current rating.	Select IRFR210TRLPBF-BE3 when tape-and-reel packaging, BE3 manufacturing traceability, or legacy design continuity is required.
SiHFR210-GE3	Identical absolute ratings and electrical specs per Vishay documentation; differs only in halogen-free material compliance and GE3 suffix marking.	No functional difference; GE3 variant meets stricter environmental requirements (RoHS + halogen-free) without performance trade-offs.	Choose SiHFR210-GE3 for new designs targeting IEC 61249-2-21 compliance or green procurement policies.

Compared with IRFR210TRLPBF-BE3, IRFR210TRLPBF-BE3 offers verified BE3 facility traceability and Pb-free/halogen-free compliance, while IRLR210PbF delivers higher current capability and lower gate charge for frequency-critical designs, and SiHFR210-GE3 provides identical performance with enhanced environmental compliance.

Availability

IRFR210TRLPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, AC-DC auxiliary supplies, and programmable load switching requiring stable component supply and long-term production support.

Supply support for IRFR210TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The IRFR210TRLPBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized switching in industrial and automotive-qualified power conversion systems where avalanche capability and surface-mount compatibility are essential.

FAQ

What is the maximum continuous drain current for IRFR210TRLPBF-BE3 at 100 °C case temperature?

The maximum continuous drain current for IRFR210TRLPBF-BE3 is 1.7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied when ambient or board temperatures exceed 25 °C, especially in enclosed or high-power-density layouts where R_thJA approaches 50 °C/W.

Does IRFR210TRLPBF-BE3 support logic-level gate drive?

IRFR210TRLPBF-BE3 is not a logic-level MOSFET; its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may partially turn on with 5 V drive, full enhancement requires ≥10 V to achieve the specified 1.5 Ω on-resistance-using it with 3.3 V or 5 V logic without level-shifting risks excessive conduction loss and thermal runaway in IRFR210TRLPBF-BE3-based circuits.

What is the avalanche energy rating of IRFR210TRLPBF-BE3 and how is it tested?

IRFR210TRLPBF-BE3 has a single-pulse avalanche energy rating (E_AS) of 95 mJ, tested per Figure 12 with V_DD = 50 V, starting T_J = 25 °C, L = 28 mH, R_g = 25 Ω, and I_AS = 2.6 A. This rating validates safe operation during unclamped inductive switching events, such as relay coil de-energization or motor phase commutation, without requiring external snubbers in IRFR210TRLPBF-BE3 implementations.

Can IRFR210TRLPBF-BE3 be used in parallel configurations?

Yes, IRFR210TRLPBF-BE3 is designed for ease of paralleling, as noted in its features list. Its positive temperature coefficient of R_DS(on) (see Fig. 3) promotes current sharing across multiple devices, and low gate charge (8.2 nC) simplifies synchronized gate driving. For stable parallel operation, ensure matched gate resistors, symmetrical PCB layout, and shared source inductance minimization-critical for maintaining balance in IRFR210TRLPBF-BE3 arrays.

What is the thermal resistance from junction to case (R_thJC) for IRFR210TRLPBF-BE3?

The maximum junction-to-case (drain) thermal resistance for IRFR210TRLPBF-BE3 is 5.0 °C/W, measured from die junction to the exposed drain pad. This value assumes proper soldering of the drain pad to a thermally optimized PCB copper area (≥1"² FR-4) and is essential for calculating allowable power dissipation: P_D = (T_J(max) − T_C) / R_thJC. At T_J = 150 °C and T_C = 25 °C, IRFR210TRLPBF-BE3 supports up to 25 W in ideal heatsink conditions.

IRFR210TRLPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR210TRLPBF-BE3 FAQ

1.How can I place an order for IRFR210TRLPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR210TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR210TRLPBF-BE3 reliable?

The price and inventory of IRFR210TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRLPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR210TRLPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRLPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR210TRLPBF-BE3?

IRFR210TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR210TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR210TRLPBF-BE3?

For technical support, including IRFR210TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRLPBF-BE3 requirements.

6.How does Aetrix verify that IRFR210TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR210TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRLPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR210TRLPBF-BE3?

All IRFR210TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRLPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR210TRLPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR210TRLPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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