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Vishay Siliconix IRFR210TRPBF
- Part No.:
- IRFR210TRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR210TRPBF.pdf
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,733
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Product details
Overview
IRFR210TRPBF from Vishay Siliconix is a 200 V, 2.6 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR210TRPBF datasheet, IRFR210TRPBF pinout, IRFR210TRPBF application, or IRFR210TRPBF equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 25 W maximum power dissipation at TC = 25 °C, 5.0 V/ns peak diode recovery dV/dt capability, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation trench MOSFET uses optimized silicon geometry to achieve low on-resistance while maintaining rugged unclamped inductive switching performance. Its dynamic dV/dt rating and 95 mJ single-pulse avalanche energy support reliable operation in inductive load switching without external snubbers.
The device integrates a fast-recovery body diode (trr = 150–310 ns, Qrr = 0.60–1.4 μC) and exhibits low internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH), enabling clean turn-on/turn-off waveforms in high-frequency PWM circuits up to 500 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin. |
| RDS(on) | 1.5 Ω max at VGS = 10 V - limits conduction loss to ≤6.3 W at 2.6 A continuous drain current. |
| Qg | 8.2 nC max - enables efficient gate drive with <100 mW average gate power at 100 kHz switching. |
| EAS | 95 mJ single-pulse - sustains unclamped inductive turn-off events in relay/motor driver applications. |
| tr/tf | 17 ns rise / 8.9 ns fall - supports fast transition times with minimal overlap loss in synchronous buck stages. |
| TJ range | −55 °C to +150 °C - qualified for extended temperature operation in automotive under-hood or industrial enclosures. |
| RthJC | 5.0 °C/W max - allows 25 W power dissipation with ≤125 °C junction-to-case ΔT using standard heatsink pads. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for PCB heat spreading and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures TTL/CMOS compatibility with margin. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on bottom of package; primary thermal path and high-voltage node. |
| S (Source) | Reference and return path | Common return for gate drive and load current; ties to ground plane or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.0 V/ns - prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations. |
| Repetitive avalanche rated | 2.5 mJ per pulse - enables robust operation in flyback or boost converters without derating for occasional overloads. |
| Fast switching | td(on) = 8.2 ns, tr = 17 ns - reduces switching losses below 100 mW in 100 kHz, 2.6 A hard-switched applications. |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering - supports automated assembly without lead bending. |
| Low Qgd/Qgs ratio | 4.5 nC / 1.8 nC = 2.5 - improves Miller immunity and enables stable operation with moderate gate resistance (24 Ω). |
Applications
| DC-DC Converter Switch | Motor Drive High-Side |
|---|---|
Use Scenario: Synchronous buck converter in 24 V industrial power supply delivering 5 V/3 A to FPGA core logic. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into output inductor; operates at 300 kHz with 50% duty cycle. Use Value: 1.5 Ω RDS(on) limits conduction loss to 9.4 mW at 1 A RMS, while 8.2 nC Qg enables efficient gate driving with low-power controller. |
Use Scenario: Brushed DC motor driver for HVAC damper actuator requiring bidirectional control and stall protection. IC Role / Device Role / Timing Role: High-side switch enabling PWM-based speed regulation; paired with low-side N-channel in H-bridge topology. Use Value: 200 V VDS accommodates back-EMF spikes up to 120 V; 95 mJ EAS absorbs inductive kick during abrupt current interruption. |
| Load Switch for 48 V Systems | LED Driver Current Regulator |
Use Scenario: Hot-swap protection circuit for redundant 48 V telecom power distribution board. IC Role / Device Role / Timing Role: Inrush-limited main pass element controlled by dedicated load switch IC; handles steady-state 2.6 A loads. Use Value: 2.6 A continuous drain rating and −55 °C to +150 °C operating range ensure reliability across environmental stress screening. |
Use Scenario: Constant-current LED string driver in outdoor signage with 36 V forward voltage and 700 mA nominal current. IC Role / Device Role / Timing Role: Low-side current sink switch modulated at 1–10 kHz for dimming; body diode unused due to external freewheel path. Use Value: 1.5 Ω RDS(on) yields only 0.74 W conduction loss at 700 mA, minimizing thermal footprint on compact PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR210PbF | Same VDS (200 V), lower RDS(on) (1.2 Ω), higher Qg (10.5 nC); IPAK (TO-251) through-hole package. | Requires through-hole mounting and larger PCB footprint; better for prototyping or low-volume manual assembly. | Select when mechanical robustness and hand-solderability outweigh surface-mount density requirements. |
| SiHFR210-GE3 | Identical electrical specs (200 V, 1.5 Ω, 8.2 nC), same DPAK package, halogen-free construction per Vishay spec 99912. | No functional difference; differs only in material compliance and traceability marking (GE3 vs. BE3). | Choose for RoHS/halogen-free compliance mandates where IRFR210TRPBF-BE3 may not meet final product certification. |
Compared with IRFR210TRPBF, IRLR210PbF trades surface-mount convenience for slightly lower conduction loss but requires different assembly and thermal management, while SiHFR210-GE3 offers identical performance with enhanced environmental compliance-making it a direct material-grade alternative rather than an electrical substitute.
Availability
IRFR210TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial load switching requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRFR210TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRFR210TRPBF belongs to Vishay's third-generation power MOSFET family engineered for high-reliability industrial and telecom power conversion-balancing low RDS(on), fast switching, and avalanche survivability in compact surface-mount packages.
FAQ
What is the gate threshold voltage range for IRFR210TRPBF?
The IRFR210TRPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing noise margin against spurious activation in noisy industrial environments. The IRFR210TRPBF does not require gate driver boosting for most 5 V microcontroller interfaces.
Is IRFR210TRPBF suitable for avalanche operation in inductive load switching?
Yes, the IRFR210TRPBF is explicitly rated for repetitive avalanche operation with 2.5 mJ per pulse and 95 mJ single-pulse energy (EAS). It is validated for unclamped inductive switching per Figure 12 in Vishay document 91268, making it appropriate for relay drivers, solenoid controls, and flyback converter primary switches where voltage overshoot must be contained without external clamping. The IRFR210TRPBF's avalanche capability is production-tested, not just characterized.
What is the thermal resistance from junction to ambient for IRFR210TRPBF on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR210TRPBF exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes standard copper pour and no external heatsink, supporting up to 2.5 W continuous power dissipation at 25 °C ambient before reaching the 150 °C maximum junction temperature. The IRFR210TRPBF's DPAK package relies heavily on PCB copper area for thermal management.
Does IRFR210TRPBF have a fast-recovery body diode, and what are its key parameters?
Yes, the IRFR210TRPBF integrates a fast-recovery body diode with reverse recovery time (trr) of 150–310 ns and reverse recovery charge (Qrr) of 0.60–1.4 μC at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. These values enable use in synchronous rectification and freewheeling paths where low Qrr minimizes switching loss and EMI. The IRFR210TRPBF body diode is not optimized for continuous conduction mode but performs well in discontinuous and boundary-mode topologies.
What is the maximum continuous drain current for IRFR210TRPBF at 100 °C case temperature?
The IRFR210TRPBF supports a continuous drain current (ID) of 1.7 A at TC = 100 °C, derated linearly from 2.6 A at 25 °C using a factor of 0.20 W/°C. This reflects real-world thermal constraints in enclosed industrial enclosures or stacked PCB assemblies where case temperature exceeds ambient. Designers must verify actual TC via thermal simulation or measurement to ensure the IRFR210TRPBF remains within safe SOA limits.
IRFR210TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR210TRPBF FAQ
1.How can I place an order for IRFR210TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR210TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR210TRPBF reliable?
The price and inventory of IRFR210TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRPBF is usually 5 days.
3.What payment methods are accepted for IRFR210TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR210TRPBF?
IRFR210TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR210TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR210TRPBF?
For technical support, including IRFR210TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRPBF requirements.
6.How does Aetrix verify that IRFR210TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR210TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRPBF meets industry standards.
7.What is the process for return or replacement of IRFR210TRPBF?
All IRFR210TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR210TRPBF part is unused and in its original packaging.
Return procedure for IRFR210TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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