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Vishay Siliconix IRFR210TRPBF-BE3
- Part No.:
- IRFR210TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR210TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 200V 2.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,885
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Product details
Overview
IRFR210TRPBF-BE3 from Vishay Siliconix is a 200 V, 2.6 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control stages, and LED drivers requiring robust switching under inductive loads.
For engineers reviewing the IRFR210TRPBF-BE3 datasheet, IRFR210TRPBF-BE3 pinout, IRFR210TRPBF-BE3 application, or IRFR210TRPBF-BE3 equivalent, key selection criteria include its 200 V VDS, 1.5 Ω on-resistance at 10 V drive, 95 mJ single-pulse avalanche energy, DPAK thermal performance (RthJC = 5.0 °C/W), and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation TrenchFET® MOSFET uses planar silicon process to achieve low RDS(on) while maintaining rugged dynamic dV/dt capability (5.0 V/ns) and fast switching (td(on) = 8.2 ns, tr = 17 ns). Its integral body diode supports freewheeling in buck and half-bridge topologies with trr = 150–310 ns and Qrr = 0.60–1.4 μC.
The device operates across -55 °C to +150 °C junction temperature range, with linear derating of 0.20 W/°C above 25 °C case temperature. It is rated for 10 A pulsed drain current (IDM), 2.7 A repetitive avalanche current (IAR), and 2.5 mJ repetitive avalanche energy (EAR), enabling reliable operation in unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 120 VAC rectified or 48 V industrial bus applications. |
| RDS(on) @ VGS = 10 V | 1.5 Ω max - Enables ≤3.3 W conduction loss at 2.6 A continuous drain current, reducing thermal stress in PCB-mounted designs. |
| Qg | 8.2 nC max - Low gate charge allows efficient driving with standard gate drivers (e.g., TC4420) at 100–500 kHz switching frequencies. |
| EAS | 95 mJ - Single-pulse avalanche energy rating ensures survival during transient overvoltage events without external snubbers. |
| RthJC | 5.0 °C/W max - Junction-to-case thermal resistance enables 25 W power dissipation when mounted on heatsink, critical for high-duty-cycle operation. |
| ID @ TC = 100 °C | 1.7 A - Derated continuous current at elevated case temperature confirms usable output in enclosed or thermally constrained environments. |
| dV/dt Rating | 5.0 V/ns - Confirmed peak diode recovery dV/dt capability prevents spurious turn-on during fast commutation in bridge circuits. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for automated assembly and PCB heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with microcontroller GPIOs. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on underside-must be routed to ground plane or heatsink for thermal management and low-inductance return path. |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive; internal source inductance LS = 7.5 nH affects switching waveform fidelity in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.7 A IAR, 2.5 mJ EAR - Enables reliable operation in flyback, boost, and motor phase-leg circuits without external clamping. |
| Dynamic dV/dt immunity | 5.0 V/ns - Prevents false triggering during rapid voltage transients across drain-source, critical in half-bridge and synchronous rectifier use. |
| Fast switching performance | td(on) = 8.2 ns, tr = 17 ns - Reduces switching losses in high-frequency SMPS (≥200 kHz), improving efficiency in compact power supplies. |
| Low gate charge | Qg = 8.2 nC - Minimizes driver power consumption and simplifies gate drive design using low-current logic buffers or integrated drivers. |
| Surface-mount DPAK package | TO-252 outline with 6.35 mm × 6.73 mm footprint - Supports automated placement and reflow soldering; thermal pad improves PCB heat extraction vs. through-hole alternatives. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 24–48 V input to 5–12 V output in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with forced PWM control. Use Value: 1.5 Ω RDS(on) limits conduction loss to <1.0 W at 2.6 A load, while 8.2 nC Qg enables clean 10 ns rise/fall edges under 1 Ω gate resistance. |
Use Scenario: H-bridge half-leg for 12–36 V brushed motors in HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 2.6 A with body-diode freewheeling. Use Value: 95 mJ EAS withstands inductive kickback during abrupt direction reversal; 150–310 ns trr minimizes diode recovery loss during PWM dead-time. |
| LED Constant-Current Driver | AC-DC Auxiliary Supply |
Use Scenario: Primary-side switch in isolated flyback LED driver powering 10–20 W streetlight modules. IC Role / Device Role / Timing Role: Main power switch cycling at 65 kHz with discontinuous conduction mode (DCM). Use Value: Repetitive avalanche rating (2.5 mJ EAR) absorbs leakage inductance energy without snubber, simplifying BOM and layout. |
Use Scenario: Standby power supply in consumer electronics, delivering 5 V/0.5 A from rectified 120 VAC input. IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback converter operating at variable frequency. Use Value: 200 V VDS provides 2× safety margin over 170 V peak rectified line; 5.0 °C/W RthJC maintains <100 °C junction temp at full load on 1" FR-4 PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR210TRPBF | Same VDS (200 V), lower RDS(on) (1.4 Ω), identical DPAK package and pinout. | Higher current capability (2.8 A @ TC = 25 °C); slightly improved efficiency in thermally limited designs. | Select when marginal conduction loss reduction justifies sourcing from alternate Vishay family. |
| STP2NK20Z | 200 V VDS, higher RDS(on) (2.2 Ω), TO-220 package (not surface-mount), no avalanche rating. | Requires through-hole assembly and heatsink; unsuitable for high-density or automated SMT production. | Consider only for legacy through-hole designs where DPAK footprint is unavailable and avalanche robustness is not required. |
Compared with IRFR210TRPBF-BE3, IRLR210TRPBF offers marginally better conduction performance in identical DPAK layout, while STP2NK20Z trades surface-mount compatibility and avalanche ruggedness for legacy package familiarity-making IRFR210TRPBF-BE3 optimal for new SMT-based industrial power stages.
Availability
IRFR210TRPBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control stages, LED drivers, and auxiliary AC-DC supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for IRFR210TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-volume manufacturability.
The IRFR210TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for cost-effective, high-reliability switching in industrial, automotive, and consumer power conversion systems.
FAQ
What is the maximum continuous drain current for IRFR210TRPBF-BE3 at 100 °C case temperature?
The IRFR210TRPBF-BE3 supports 1.7 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation without exceeding 150 °C maximum junction temperature. Designers must verify PCB copper area and airflow to sustain this current in real-world conditions.
Does IRFR210TRPBF-BE3 have avalanche capability, and how is it specified?
Yes, IRFR210TRPBF-BE3 is repetitively avalanche rated with 2.7 A IAR and 2.5 mJ EAR, and single-pulse rated for 95 mJ EAS. These values are measured under defined test conditions (VDD = 50 V, L = 28 mH, Rg = 25 Ω) and enable reliable operation in inductive switching circuits without external protection components.
What is the gate threshold voltage range for IRFR210TRPBF-BE3, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for IRFR210TRPBF-BE3 is specified from 2.0 V to 4.0 V at ID = 250 μA. This range confirms compatibility with standard 3.3 V and 5 V logic-level drivers, though full enhancement requires ≥10 V VGS to achieve the rated 1.5 Ω RDS(on). Operating near threshold increases RDS(on) nonlinearly and must be avoided in power-switching roles.
Can IRFR210TRPBF-BE3 be used in place of IRFR210PbF-BE3?
Yes-IRFR210TRPBF-BE3 is the tape-and-reel packaging variant of IRFR210PbF-BE3, sharing identical electrical specifications, DPAK (TO-252) package, pinout, and "-BE3" alternate manufacturing location marking. The "TR" suffix denotes tape-and-reel format for automated pick-and-place, while "PbF" indicates lead-free finish; both are functionally and mechanically interchangeable.
What is the thermal resistance from junction to ambient for IRFR210TRPBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, IRFR210TRPBF-BE3 has RthJA = 50 °C/W. This value assumes minimal copper area and natural convection; adding thermal vias and larger copper pours can improve this significantly. For heatsink-mounted operation, RthJC = 5.0 °C/W governs thermal path from die to heatsink interface.
IRFR210TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR210TRPBF-BE3 FAQ
1.How can I place an order for IRFR210TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR210TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR210TRPBF-BE3 reliable?
The price and inventory of IRFR210TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR210TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR210TRPBF-BE3?
IRFR210TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR210TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR210TRPBF-BE3?
For technical support, including IRFR210TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR210TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR210TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR210TRPBF-BE3?
All IRFR210TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR210TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR210TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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