Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR210TRR

Part No.:
IRFR210TRR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR210TRR.pdf
Description:
MOSFET N-CH 200V 2.6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,881

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR210TRR from Vishay Siliconix is a 200 V, 2.6 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, with RDS(on) = 1.5 Ω at VGS = 10 V, Qg = 8.2 nC, and repetitive avalanche rated for 2.5 mJ - used in DC-DC converters, motor control stages, and load switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR210TRR datasheet, IRFR210TRR pinout, IRFR210TRR application, or IRFR210TRR equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (trr = 150–310 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for industrial power stage design.

Technical Context

This device employs third-generation trench-gate silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its 5.0 V/ns peak diode recovery dV/dt rating and 95 mJ single-pulse avalanche energy support reliable operation under transient overvoltage conditions without external snubbers.

The IRFR210TRR features a monolithic body diode with VSD = 2.0 V at IS = 2.6 A and Qrr = 0.60–1.4 μC, enabling efficient synchronous rectification in flyback and buck topologies when paired with appropriate gate drive timing.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin.
RDS(on)1.5 Ω max at VGS = 10 V - limits conduction loss to ≤6.24 W at 2.6 A continuous drain current.
Qg8.2 nC max - enables <15 ns turn-on delay and <20 ns rise time with 24 Ω gate resistor, suitable for 500 kHz+ switching.
EAS95 mJ single-pulse - withstands energy from inductive kickback in relay drivers or solenoid controls without failure.
trr150–310 ns - defines minimum dead-time requirement in half-bridge configurations to prevent shoot-through.
PD (PCB mount)2.5 W at TA = 25 °C - requires ≥1"² FR-4 copper area for thermal management in surface-mount applications.
RthJA (PCB)50 °C/W - determines junction temperature rise of 125 °C above ambient at full 2.5 W dissipation.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction; standard footprint per Vishay Application Note 826 (10.668 mm × 5.690 mm pad layout). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeAccepts 10 V logic-level drive; VGS(th) = 2.0–4.0 V ensures turn-on with standard microcontroller GPIO.
Drain (D)High-side power terminalExposed metal tab - must be connected to high-current output node and thermally coupled to PCB copper pour.
Source (S)Reference/return pathLow-impedance return for load current; internal source inductance LS = 7.5 nH affects high-di/dt ringing.

Key Features

FeatureDesign Value
Repetitive avalanche rated2.5 mJ per pulse - enables reliable operation in inductive load switching without external clamping.
Dynamic dV/dt immunity5.0 V/ns - suppresses false turn-on during high-speed voltage transients in motor drive half-bridges.
Fast switching performancetd(on) = 8.2 ns, tr = 17 ns - reduces switching losses in high-frequency DC-DC converters.
Surface-mount DPAK packageCompatible with vapor-phase and IR reflow - eliminates through-hole assembly cost in automated production.
Low gate chargeQg = 8.2 nC - minimizes driver power consumption and simplifies gate driver selection (e.g., TC4420).

Applications

DC-DC Converter SwitchMotor Drive High-Side Switch

Use Scenario: Step-down regulation in 24–48 V industrial power supplies delivering up to 3 A output.

IC Role / Device Role / Timing Role: Primary switching element in synchronous buck topology operating at 300–500 kHz.

Use Value: Low RDS(on) and Qg reduce total power loss to <1.2 W at 3 A/12 V out, improving efficiency by ≥2.1% vs. legacy MOSFETs.

Use Scenario: Driving brushed DC motors in HVAC actuators and robotic joints requiring bidirectional PWM control.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration with discrete bootstrap gate driver.

Use Value: 200 V VDS rating accommodates back-EMF spikes up to 160 V; 150 ns body diode trr enables safe commutation at 20 kHz PWM.

LED Constant-Current DriverIndustrial Load Switch

Use Scenario: Constant-current dimming of high-brightness LED strings in street lighting and signage.

IC Role / Device Role / Timing Role: Series pass element modulated via analog or PWM input to regulate LED current.

Use Value: Ruggedized construction sustains 100% duty-cycle operation at 2.6 A with thermal shutdown margin due to 150 °C TJ(max).

Use Scenario: Remote-controlled power enable for PLC I/O modules, sensors, and fieldbus interfaces.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in 24 V DC distribution panels.

Use Value: Avalanche rating absorbs inductive turn-off energy from solenoids and contactors, eliminating need for freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR210PbFRDS(on) = 1.8 Ω (higher), Qg = 7.8 nC (slightly lower), same DPAK package and 200 V rating.Marginally higher conduction loss but improved gate drive efficiency in low-duty-cycle switching.Select when gate drive strength is limited and thermal margin allows 0.3 Ω higher RDS(on).
SiHFR210TRR-GE3Identical RDS(on), Qg, and avalanche specs; halogen-free, RoHS-compliant variant with GE3 suffix.No functional difference; required for compliance-sensitive medical or automotive programs mandating halogen-free materials.Select for new designs requiring IPC-1752-compliant material declarations and lead-free/halogen-free certification.

Compared with IRFR210TRR, IRLR210PbF trades 0.3 Ω higher on-resistance for marginally reduced gate charge, while SiHFR210TRR-GE3 offers identical electrical performance with halogen-free packaging - both require no PCB layout changes but differ in compliance and thermal loss profiles.

Availability

IRFR210TRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drive stages, and industrial load switching requiring stable component supply across extended production lifecycles.

Supply support for IRFR210TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR210TRR belongs to Vishay's third-generation power MOSFET family engineered for fast switching, low RDS(on), and rugged avalanche performance in surface-mount power conversion and control applications.

FAQ

What is the maximum continuous drain current for IRFR210TRR at 100 °C case temperature?

The IRFR210TRR supports 1.7 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.20 W/°C and 25 W maximum power dissipation at 25 °C. This value reflects thermal limitation of the DPAK package under heatsinked conditions - not ambient-rated operation. For PCB-mounted use, the 2.5 W limit governs lower current capability.

Does IRFR210TRR have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFR210TRR integrates a monolithic body diode with VSD = 2.0 V at IS = 2.6 A and reverse recovery time trr = 150–310 ns at TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs. Its Qrr = 0.60–1.4 μC directly impacts switching loss in hard-commutated topologies and must be accounted for in gate timing design.

Is IRFR210TRR compatible with standard DPAK footprint layouts per IPC-7351?

Yes, the IRFR210TRR uses the TO-252AA (DPAK) package with dimensions matching IPC-7351A "SOIC252" generic outline. Vishay's recommended minimum pads (10.668 mm × 5.690 mm) align with industry-standard stencil and reflow profiles - no layout adaptation is needed when migrating from other DPAK MOSFETs like IRFR3707 or STP16NF20.

What is the gate-source threshold voltage range for IRFR210TRR, and how does it affect microcontroller drive?

The IRFR210TRR has a VGS(th) range of 2.0–4.0 V at ID = 250 μA, making it compatible with 3.3 V and 5 V logic-level microcontrollers. Full enhancement occurs above 4.0 V, so 5 V GPIO ensures robust turn-on; 3.3 V drive yields partial conduction and higher RDS(on) - a gate driver is recommended for consistent performance at 3.3 V.

Can IRFR210TRR be paralleled for higher current handling, and what design considerations apply?

Yes, the IRFR210TRR is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Key requirements include matched gate resistors (≤1 Ω tolerance), symmetrical PCB routing to minimize loop inductance, and individual gate resistors (not shared) to damp oscillation. Thermal coupling between devices must also be uniform to avoid thermal runaway.

IRFR210TRR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR210TRR FAQ

1.How can I place an order for IRFR210TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR210TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR210TRR reliable?

The price and inventory of IRFR210TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRR is usually 5 days.

3.What payment methods are accepted for IRFR210TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR210TRR?

IRFR210TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR210TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR210TRR?

For technical support, including IRFR210TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRR requirements.

6.How does Aetrix verify that IRFR210TRR is sourced from the original manufacturer or authorized distributors?

All IRFR210TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRR meets industry standards.

7.What is the process for return or replacement of IRFR210TRR?

All IRFR210TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR210TRR part is unused and in its original packaging.

Return procedure for IRFR210TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR210TRR Tags

  • IRFR210TRR
  • IRFR210TRR PDF
  • IRFR210TRR Datasheet
  • IRFR210TRR Specifications
  • IRFR210TRR Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR210TRR
  • Buy IRFR210TRR
  • IRFR210TRR Price
  • IRFR210TRR Distributor
  • IRFR210TRR Supplier
  • IRFR210TRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER