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Vishay Siliconix IRFR214PBF
- Part No.:
- IRFR214PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR214PBF.pdf
- Description:
- MOSFET N-CH 250V 2.2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,850
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Product details
Overview
IRFR214PBF from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR214PBF datasheet, IRFR214PBF pinout, IRFR214PBF application, or IRFR214PBF equivalent, key selection criteria include its 250 V drain-source breakdown voltage, 2.2 A continuous drain current at TC = 25 °C, 5.0 °C/W junction-to-case thermal resistance, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve ruggedized avalanche performance and fast switching with low gate charge. Its dynamic dV/dt rating of 4.8 V/ns supports reliable operation in inductive switching circuits without external snubbers.
The device integrates a robust body diode with 2.0 V forward voltage at 2.2 A and 190–390 ns reverse recovery time, enabling efficient freewheeling in synchronous rectification and half-bridge topologies where unclamped inductive energy must be safely absorbed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Withstands up to 250 V drain-source voltage before breakdown, suitable for 200 V bus applications with margin. |
| RDS(on) | 2.0 Ω @ VGS = 10 V - Low conduction loss at standard gate drive, enabling <1.2 W I²R loss at 2.2 A DC current. |
| Qg | 8.2 nC - Enables fast turn-on/turn-off with moderate gate driver strength; reduces switching losses in 100–500 kHz SMPS designs. |
| ID (cont.) | 2.2 A @ TC = 25 °C - Continuous current capability defined at case temperature, requiring heatsinking or PCB copper area for sustained operation. |
| EAS | 190 mJ - Single-pulse avalanche energy rating allows safe operation under inductive fault conditions without external clamping. |
| RthJC | 5.0 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsink or copper pour for power dissipation up to 25 W. |
| VGS(th) | 2.0–4.0 V - Gate threshold range ensures reliable turn-on with 5 V or 10 V logic-level drivers; not logic-compatible at 3.3 V. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Standard lead finish is Pb-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement; gate leakage ≤ ±100 nA at ±20 V. |
| D | Drain | Main high-side power terminal; electrically and thermally connected to exposed backside pad; rated for 250 V blocking. |
| S | Source | Power return path and reference for gate drive; forms common node with body diode cathode in N-channel configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 2.2 A repetitive avalanche current and 2.5 mJ energy, enabling robustness in flyback and boost converter primary switches without derating. |
| Dynamic dV/dt rating | 4.8 V/ns immunity prevents false turn-on during high-slew-rate transients in half-bridge or inverter leg configurations. |
| Surface-mount (DPAK) | Compatible with automated assembly using vapor-phase, infrared, or wave soldering; recommended pad layout per AN826 for thermal reliability. |
| Fast switching | 7.0 ns turn-on delay + 7.6 ns rise time + 16 ns turn-off delay + 7.0 ns fall time enables >500 kHz operation with minimal overlap loss. |
| Body diode optimized | 190–390 ns trr and 0.65–1.3 μC Qrr reduce switching loss and EMI in freewheeling paths versus standard MOSFETs. |
Applications
| DC-DC Converter Primary Switch | Motor Drive High-Side Switch |
|---|---|
Use Scenario: Used as main switching element in non-isolated buck or boost converters operating from 24–100 V input rails. IC Role / Device Role / Timing Role: Power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–300 kHz. Use Value: 2.0 Ω RDS(on) minimizes conduction loss at 2.2 A load; 8.2 nC Qg enables efficient gate drive with low-power controllers. | Use Scenario: Controls power delivery to brushed DC motors in 24–48 V industrial actuators and valve drivers. IC Role / Device Role / Timing Role: High-side load switch activated by microcontroller GPIO or dedicated gate driver; operates in on/off or PWM mode. Use Value: Repetitive avalanche rating absorbs inductive kickback during abrupt turn-off; 250 V VDS provides margin over 48 V bus with transient spikes. |
| Industrial Load Switch | LED Driver Current Regulator |
Use Scenario: Enables/disables 24 V or 48 V subsystems (e.g., sensors, communication modules) in programmable logic controllers. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; driven by 10 V logic signal with controlled slew rate. Use Value: 2.2 A continuous current supports typical PLC I/O loads; 5.0 °C/W RthJC allows direct mounting to metal chassis for passive cooling. | Use Scenario: Serves as constant-current switch in high-brightness LED string drivers for signage or machine vision lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator in buck-derived topology; switches at 1–10 kHz to set average LED current. Use Value: Body diode trr < 400 ns limits reverse recovery loss during PWM transitions; 250 V rating accommodates string voltages up to 200 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220PBF | Higher VDS = 200 V, lower RDS(on) = 1.5 Ω, same DPAK package and pinout. | Not rated for 250 V systems; better suited for 100–150 V bus applications requiring lower conduction loss. | Select IRFR220PBF only when 200 V rating suffices and RDS(on) reduction justifies trade-off in voltage margin. |
| SiHFR214-GE3 | Identical electrical specs and DPAK package; halogen-free construction and GE3 suffix denote Vishay's green material compliance. | No functional difference; preferred for RoHS-compliant and halogen-free BOM requirements. | SiHFR214-GE3 is a drop-in replacement for IRFR214PBF in environmentally regulated designs. |
Compared with IRFR214PBF, IRFR220PBF offers lower on-resistance but sacrifices 50 V of voltage headroom, while SiHFR214-GE3 delivers identical performance with enhanced environmental compliance-making it the preferred alternative for new designs targeting IPC-1752 or EU Green Procurement standards.
Availability
IRFR214PBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and DC-DC converter designs requiring stable component supply and long-term manufacturability.
Supply support for IRFR214PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFR214PBF belongs to Vishay's third-generation power MOSFET product line, engineered for high-voltage switching applications demanding avalanche robustness, fast switching, and surface-mount compatibility in industrial and automotive-qualified environments.
FAQ
What is the maximum continuous drain current for IRFR214PBF at 100 °C case temperature?
The IRFR214PBF supports 1.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate PCB copper area or heatsinking to maintain case temperature below 100 °C for sustained 1.4 A operation. The IRFR214PBF datasheet confirms this value under standard test conditions with no additional ambient airflow or forced cooling.
Does IRFR214PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFR214PBF integrates a monolithic body diode with VSD = 2.0 V at IS = 2.2 A and TJ = 25 °C, trr = 190–390 ns, and Qrr = 0.65–1.3 μC. These values are measured under standardized conditions (IF = 2.7 A, dI/dt = 100 A/μs), confirming suitability for freewheeling in hard-switched topologies. The IRFR214PBF body diode is not optimized for synchronous rectification but provides reliable inductive energy recirculation.
Is IRFR214PBF compatible with lead-free reflow soldering processes?
Yes, IRFR214PBF is qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, per JEDEC J-STD-020. The device uses Pb-free terminations and complies with RoHS Directive 2011/65/EU. Vishay's packaging documentation confirms compatibility with vapor-phase, infrared, and wave soldering techniques-critical for IRFR214PBF integration into modern SMT lines without process redesign.
What is the gate threshold voltage range for IRFR214PBF, and how does it affect drive requirements?
The IRFR214PBF has a gate threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at ID = 250 μA. This means reliable turn-on requires VGS ≥ 10 V to achieve full RDS(on) = 2.0 Ω; 5 V drive yields partial enhancement with higher on-resistance. The IRFR214PBF is not a logic-level MOSFET and should not be driven directly from 3.3 V microcontrollers without level-shifting or gate boosting.
How does the avalanche rating of IRFR214PBF impact its use in inductive switching circuits?
The IRFR214PBF is rated for 190 mJ single-pulse avalanche energy and 2.5 mJ repetitive avalanche energy, allowing it to safely absorb inductive energy during switching transients without external clamping components. This capability makes the IRFR214PBF suitable for flyback, boost, and half-bridge topologies where voltage overshoot exceeds VDS rating-provided pulse width and duty cycle remain within limits defined in Figure 11 and 14 of the IRFR214PBF datasheet.
IRFR214PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR214PBF FAQ
1.How can I place an order for IRFR214PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR214PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR214PBF reliable?
The price and inventory of IRFR214PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214PBF is usually 5 days.
3.What payment methods are accepted for IRFR214PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR214PBF?
IRFR214PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR214PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR214PBF?
For technical support, including IRFR214PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214PBF requirements.
6.How does Aetrix verify that IRFR214PBF is sourced from the original manufacturer or authorized distributors?
All IRFR214PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214PBF meets industry standards.
7.What is the process for return or replacement of IRFR214PBF?
All IRFR214PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR214PBF part is unused and in its original packaging.
Return procedure for IRFR214PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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