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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR214PBF-BE3

Name: IRFR214PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR214PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR214PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR214PBF-BE3.pdf

Description:: MOSFET N-CH 250V 2.2A DPAK

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Product details

Overview

IRFR214PBF-BE3 from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching.

For engineers reviewing the IRFR214PBF-BE3 datasheet, IRFR214PBF-BE3 pinout, IRFR214PBF-BE3 application, or IRFR214PBF-BE3 equivalent, key selection factors include its 25 W T_C power dissipation, 5.0 °C/W junction-to-case thermal resistance, dV/dt ruggedness of 4.8 V/ns, and compatibility with vapor-phase and wave soldering processes.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining robust unclamped inductive switching capability. Its 190 mJ single-pulse avalanche energy and 2.2 A repetitive avalanche current support reliable operation under transient overvoltage conditions without external snubbers.

The device integrates a fast-recovery body diode with 190–390 ns reverse recovery time and 0.65–1.3 μC Q_rr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate drive requirements are optimized by 1.8 nC Q_gs and 4.5 nC Q_gd, supporting clean turn-on/turn-off with minimal Miller-induced oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports 200 V bus designs with 25 % margin for voltage transients
R_DS(on)	2.0 Ω @ V_GS = 10 V - enables <1.3 A continuous conduction with ≤3.4 W I²R loss at T_C = 25 °C
Q_g	8.2 nC - determines gate drive power requirement; ~164 μW avg. at 100 kHz with 10 V swing
I_D (T_C = 100 °C)	1.4 A - defines usable current in thermally constrained PCB-mount applications
E_AS	190 mJ - allows safe clamping of 2.2 A inductive spikes without derating in compact layouts
R_thJC	5.0 °C/W - enables direct heatsink mounting for high-power density thermal management
dV/dt rating	4.8 V/ns - ensures immunity to false turn-on during high-slew-rate switching events

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures TTL/CMOS compatibility
D (Drain)	High-side power output	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB
S (Source)	Reference node / return path	Provides low-inductance source return; internal LS = 7.5 nH limits di/dt-induced voltage overshoot

Key Features

Feature	Design Value
Repetitive avalanche rated	2.2 A I_AR and 2.5 mJ E_AR enable sustained operation under inductive fault conditions without derating
Dynamic dV/dt rating	4.8 V/ns immunity prevents spurious turn-on during fast voltage transitions in half-bridge configurations
Fast switching	7.0 ns t_d(on), 7.6 ns t_r, 16 ns t_d(off), 7.0 ns t_f support >500 kHz PWM frequencies with low switching loss
Surface-mount (DPAK)	Compatible with standard vapor-phase, infrared, and wave soldering; footprint matches JEDEC TO-252AA outline
Body diode optimization	trr = 190–390 ns and Q_rr = 0.65–1.3 μC reduce recovery losses in flyback and buck-boost topologies

Applications

Motor Control	DC-DC Converters
Use Scenario: Low-voltage brushed DC motor driver in industrial actuators with 24–48 V supply rails. IC Role / Device Role / Timing Role: High-side switch controlling motor direction and speed via PWM at 20–100 kHz. Use Value: 2.0 Ω R_DS(on) minimizes conduction loss at 1.3 A nominal load; avalanche rating handles back-EMF spikes up to 190 mJ.	Use Scenario: Secondary-side synchronous rectifier in isolated 24 V output flyback converters. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: Body diode trr ≤ 390 ns and Q_rr ≤ 1.3 μC limit reverse recovery loss; 2.2 A I_D supports peak currents in 15–30 W designs.
Industrial Power Supplies	Lighting Ballasts
Use Scenario: Primary-side switching element in non-isolated buck regulators powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50 % duty cycle and 2.2 A peak current. Use Value: 8.2 nC Q_g enables efficient gate driving with low-power controllers; R_thJC = 5.0 °C/W supports heatsink-less operation on 1" FR-4 PCB.	Use Scenario: Lamp current regulation switch in electronic HID ballasts with 150–200 V DC link. IC Role / Device Role / Timing Role: Series-pass switch modulating lamp power using variable-frequency resonant control. Use Value: 250 V V_DS withstands open-circuit ignition pulses; dV/dt rating of 4.8 V/ns prevents false triggering during high-slew ignition events.

Motor Control

DC-DC Converters

Use Scenario: Low-voltage brushed DC motor driver in industrial actuators with 24–48 V supply rails.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and speed via PWM at 20–100 kHz.

Use Value: 2.0 Ω R_DS(on) minimizes conduction loss at 1.3 A nominal load; avalanche rating handles back-EMF spikes up to 190 mJ.

Use Scenario: Secondary-side synchronous rectifier in isolated 24 V output flyback converters.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode to improve efficiency at light-to-moderate loads.

Use Value: Body diode trr ≤ 390 ns and Q_rr ≤ 1.3 μC limit reverse recovery loss; 2.2 A I_D supports peak currents in 15–30 W designs.

Industrial Power Supplies

Lighting Ballasts

Use Scenario: Primary-side switching element in non-isolated buck regulators powering PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50 % duty cycle and 2.2 A peak current.

Use Value: 8.2 nC Q_g enables efficient gate driving with low-power controllers; R_thJC = 5.0 °C/W supports heatsink-less operation on 1" FR-4 PCB.

Use Scenario: Lamp current regulation switch in electronic HID ballasts with 150–200 V DC link.

IC Role / Device Role / Timing Role: Series-pass switch modulating lamp power using variable-frequency resonant control.

Use Value: 250 V V_DS withstands open-circuit ignition pulses; dV/dt rating of 4.8 V/ns prevents false triggering during high-slew ignition events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR220PBF	Higher V_DS = 200 V, lower R_DS(on) = 1.5 Ω, same DPAK package and pinout	Not rated for 250 V systems; limited to ≤160 V bus applications	Select when lower conduction loss is critical and voltage stress remains below 180 V.
SiHFR214-GE3	Identical electrical specs and DPAK package; differs only in halogen-free material set and manufacturing location	No functional or layout impact; fully interchangeable in RoHS-compliant designs	Prefer for lead-free/halogen-free compliance without performance trade-offs.

Compared with IRFR214PBF-BE3, IRFR220PBF offers lower on-resistance but insufficient voltage margin for 200 V+ rails, while SiHFR214-GE3 delivers identical performance with enhanced environmental compliance-making it the drop-in alternative for regulated markets.

Availability

IRFR214PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and lighting ballast designs requiring stable component supply across extended production lifecycles.

Supply support for IRFR214PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.

The IRFR214PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered specifically for ruggedized, cost-effective switching in surface-mount power supplies and motor control systems where avalanche capability and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFR214PBF-BE3 at 100 °C case temperature?

The IRFR214PBF-BE3 supports 1.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.2 A at 25 °C using the 0.20 W/°C factor, and applies under proper PCB thermal management per the 1" square FR-4 mounting condition.

Does IRFR214PBF-BE3 have a specified body diode reverse recovery time?

Yes, the IRFR214PBF-BE3 body diode has a typical reverse recovery time (t_rr) of 190 ns and a maximum of 390 ns at T_J = 25 °C, I_F = 2.7 A, and dI/dt = 100 A/μs. This parameter is measured with the MOSFET symbol's intrinsic p-n junction and directly impacts efficiency in freewheeling and synchronous rectification applications.

Is IRFR214PBF-BE3 compatible with lead-free reflow soldering processes?

Yes, IRFR214PBF-BE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, as stated in the Absolute Maximum Ratings section. Its DPAK (TO-252) package is designed for vapor-phase, infrared, and wave soldering, meeting industry-standard JEDEC J-STD-020 moisture sensitivity level (MSL) requirements.

What is the gate-source threshold voltage range for IRFR214PBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRFR214PBF-BE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic drivers while providing noise margin against spurious activation in electrically noisy environments.

Can IRFR214PBF-BE3 be used in avalanche-mode operation?

Yes, IRFR214PBF-BE3 is explicitly rated for repetitive avalanche operation with I_AR = 2.2 A and E_AR = 2.5 mJ, and single-pulse avalanche energy of 190 mJ. These ratings are validated under defined test conditions (V_DD = 50 V, L = 62 mH, R_g = 25 Ω), allowing use in circuits subject to inductive energy dump without external protection components.

IRFR214PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR214PBF-BE3 FAQ

1.How can I place an order for IRFR214PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR214PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR214PBF-BE3 reliable?

The price and inventory of IRFR214PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR214PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR214PBF-BE3?

IRFR214PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR214PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR214PBF-BE3?

For technical support, including IRFR214PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214PBF-BE3 requirements.

6.How does Aetrix verify that IRFR214PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR214PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR214PBF-BE3?

All IRFR214PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR214PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR214PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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