Vishay Siliconix IRFR214TRL

Overview

IRFR214TRL from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a robust switching element in DC-DC converters, motor control stages, and industrial power supplies where fast switching and ruggedness are required.

For engineers reviewing the IRFR214TRL datasheet, IRFR214TRL pinout, IRFR214TRL application, or IRFR214TRL equivalent, key selection considerations include its 250 V blocking capability, 2.0 Ω on-resistance at 10 V drive, 2.2 A continuous drain current at T_C = 25 °C, and DPAK thermal performance with R_thJC = 5.0 °C/W.

Technical Context

This third-generation power MOSFET employs planar V-groove technology to achieve optimized trade-offs between conduction loss and switching speed. Its dynamic dV/dt rating of 4.8 V/ns and unclamped inductive switching capability (E_AS = 190 mJ) support reliable operation in hard-switched topologies.

The device integrates a fast-recovery body diode (t_rr = 190–390 ns, Q_rr = 0.65–1.3 μC) and exhibits low gate-drain charge (Q_gd = 4.5 nC), enabling reduced Miller-induced turn-off delay and improved controllability in high-frequency PWM circuits.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to internal die drain and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR214TRL, IRFR220PbF offers lower on-resistance at the cost of increased gate charge and slower switching, while SiHFR214-GE3 provides identical performance with enhanced environmental compliance-neither is pin-compatible by default, but both share the same DPAK footprint and thermal mounting requirements.

Availability

IRFR214TRL is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and ruggedized load switching requiring stable component supply across extended production lifecycles.

Supply support for IRFR214TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRFR214TRL belongs to Vishay's third-generation power MOSFET family designed specifically for high-voltage, medium-current switching in industrial and automotive-qualified power systems where avalanche robustness and surface-mount compatibility are critical.

FAQ

What is the maximum continuous drain current rating for IRFR214TRL at 100 °C case temperature?

The IRFR214TRL has a maximum continuous drain current of 1.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be applied when ambient or board-level heating exceeds 25 °C. Designers should verify junction temperature using R_thJC = 5.0 °C/W and actual power dissipation in their layout.

Does IRFR214TRL support logic-level gate drive?

No, IRFR214TRL is not a logic-level MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve the specified 2.0 Ω R_DS(on). Driving IRFR214TRL with only 3.3 V or 5 V will result in significantly higher on-resistance and excessive conduction loss. For logic-level operation, consider Vishay's Si2300 or similar dedicated low-threshold devices.

What is the body diode reverse recovery time (t_rr) of IRFR214TRL and how does it impact synchronous rectification?

The IRFR214TRL body diode reverse recovery time is 190–390 ns at T_J = 25 °C, I_F = 2.7 A, and dI/dt = 100 A/μs. In synchronous rectification, this t_rr contributes directly to switching loss and potential shoot-through risk if gate timing is not precisely controlled. Designers must use gate drivers with adjustable dead-time and account for Q_rr = 0.65–1.3 μC when sizing gate resistors and selecting complementary high-side switches.

Can IRFR214TRL be used in avalanche mode for energy clamping without external components?

Yes, IRFR214TRL is explicitly rated for repetitive avalanche operation with I_AR = 2.2 A and E_AR = 2.5 mJ, and single-pulse avalanche energy of 190 mJ. This allows it to safely clamp inductive kickback in relay drivers, solenoid controls, and flyback snubbers without external TVS diodes-provided pulse width and duty cycle remain within limits defined by junction temperature rise and Fig. 11 thermal impedance curves.

What PCB pad layout is recommended for optimal thermal performance of IRFR214TRL in DPAK package?

Vishay recommends a minimum copper pad of 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain tab of IRFR214TRL, with thermal vias connecting to inner or backside ground planes. The Application Note 826 specifies this layout achieves R_thJA ≈ 50 °C/W on 1"² FR-4, enabling 2.5 W continuous dissipation. Avoid solder mask over the drain pad and ensure ≥0.055" (1.4 mm) clearance to adjacent traces for creepage in 250 V applications.