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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR214TRLPBF

Name: IRFR214TRLPBF
Brand: Vishay Siliconix
SKU: IRFR214TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR214TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR214TRLPBF.pdf

Description:: MOSFET N-CH 250V 2.2A DPAK

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Product details

Overview

IRFR214TRLPBF from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR214TRLPBF datasheet, IRFR214TRLPBF pinout, IRFR214TRLPBF application, or IRFR214TRLPBF equivalent, key selection considerations include its 250 V blocking capability, 2.2 A continuous drain current at T_C = 25 °C, 5.0 °C/W junction-to-case thermal resistance, and compatibility with vapor-phase and wave soldering processes.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for high-voltage switching with low conduction loss and robust dynamic performance. It supports unclamped inductive switching with 190 mJ single-pulse avalanche energy and exhibits 4.8 V/ns peak diode recovery dV/dt rating.

The IRFR214TRLPBF uses planar VDMOS technology with integrated body diode, enabling ease of paralleling and stable operation under hard-switching conditions. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports primary-side switching in offline SMPS up to 200 V DC bus with margin.
R_DS(on) @ V_GS = 10 V	2.0 Ω - Delivers ≤ 4.84 W conduction loss at 2.2 A, suitable for thermally constrained SMT layouts.
Q_g	8.2 nC - Enables efficient 100–500 kHz switching with moderate gate drive strength (e.g., 1–2 A peak).
I_D (continuous, T_C = 25 °C)	2.2 A - Rated for PCB-mounted operation without heatsink in low-power applications.
E_AS	190 mJ - Withstands unclamped inductive energy in relay driving or solenoid control without failure.
R_thJC	5.0 °C/W - Allows direct thermal coupling to copper pour or small heatsink for sustained 1.4 A operation at 100 °C case temperature.
V_GS(th)	2.0–4.0 V - Ensures full enhancement with 5 V logic-level gate drivers while avoiding spurious turn-on.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; compatible with standard SMT reflow profiles including vapor-phase and infrared.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires <100 nA leakage current handling and 8.2 nC charge delivery for full enhancement.
D (Drain)	High-side power output	Connected to load or bus; electrically tied to exposed thermal pad-must be routed to large copper area for heat dissipation.
S (Source)	Power return / reference	Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects switching waveform fidelity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.2 A repetitive avalanche current and 2.5 mJ energy-enables robust operation in inductive load switching without external snubbers.
Dynamic dV/dt rating	4.8 V/ns peak diode recovery dV/dt-reduces risk of false turn-on during high-speed commutation in half-bridge configurations.
Surface-mount (DPAK)	TO-252 footprint enables automated assembly and thermal integration via PCB copper pour-no through-hole drilling required.
Fast switching	7.0 ns turn-on delay + 7.6 ns rise time at V_DD = 125 V-minimizes transition losses in high-frequency DC-DC topologies.
Low Q_gd/Q_g ratio	4.5/8.2 ≈ 55% - Improves Miller immunity and reduces gate drive power requirements compared to older MOSFET generations.

Applications

DC-DC Converter Primary Switch	Industrial Motor Driver Half-Bridge
Use Scenario: High-efficiency 24–48 V input buck or flyback converter operating at 200–500 kHz in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer or inductor; handles 250 V transient spikes and 2.2 A peak currents. Use Value: 2.0 Ω R_DS(on) minimizes conduction loss at light-to-moderate loads, while 8.2 nC Q_g enables clean switching with low-cost gate drivers.	Use Scenario: Low-voltage (<100 V) brushed DC motor control in factory automation actuators using half-bridge topology with PWM duty cycle modulation. IC Role / Device Role / Timing Role: High-side or low-side switching element managing bidirectional current flow and regenerative braking energy. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM turn-off; 190 mJ E_AS prevents failure during sudden load disconnection.
LED Driver Constant-Current Switch	AC-DC Adapter Secondary-Side Switch
Use Scenario: Constant-current LED string driver in commercial lighting systems requiring precise dimming and thermal stability over ambient temperatures up to 85 °C. IC Role / Device Role / Timing Role: Series-pass switch regulating current through high-brightness LED arrays by modulating duty cycle in buck configuration. Use Value: 2.2 A continuous rating supports multi-string designs; 2.0 Ω R_DS(on) allows accurate current sensing with minimal voltage drop across sense resistor.	Use Scenario: Synchronous rectifier or active clamp switch in 12–24 V output AC-DC adapters targeting Energy Star Level VI efficiency compliance. IC Role / Device Role / Timing Role: Secondary-side switching element replacing Schottky diodes to reduce forward voltage loss and improve light-load efficiency. Use Value: Fast 7.0 ns t_d(on) and 7.0 ns t_f enable tight timing alignment with primary controller; low Q_g reduces gate drive overhead.

DC-DC Converter Primary Switch

Industrial Motor Driver Half-Bridge

Use Scenario: High-efficiency 24–48 V input buck or flyback converter operating at 200–500 kHz in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer or inductor; handles 250 V transient spikes and 2.2 A peak currents.

Use Value: 2.0 Ω R_DS(on) minimizes conduction loss at light-to-moderate loads, while 8.2 nC Q_g enables clean switching with low-cost gate drivers.

Use Scenario: Low-voltage (<100 V) brushed DC motor control in factory automation actuators using half-bridge topology with PWM duty cycle modulation.

IC Role / Device Role / Timing Role: High-side or low-side switching element managing bidirectional current flow and regenerative braking energy.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM turn-off; 190 mJ E_AS prevents failure during sudden load disconnection.

LED Driver Constant-Current Switch

AC-DC Adapter Secondary-Side Switch

Use Scenario: Constant-current LED string driver in commercial lighting systems requiring precise dimming and thermal stability over ambient temperatures up to 85 °C.

IC Role / Device Role / Timing Role: Series-pass switch regulating current through high-brightness LED arrays by modulating duty cycle in buck configuration.

Use Value: 2.2 A continuous rating supports multi-string designs; 2.0 Ω R_DS(on) allows accurate current sensing with minimal voltage drop across sense resistor.

Use Scenario: Synchronous rectifier or active clamp switch in 12–24 V output AC-DC adapters targeting Energy Star Level VI efficiency compliance.

IC Role / Device Role / Timing Role: Secondary-side switching element replacing Schottky diodes to reduce forward voltage loss and improve light-load efficiency.

Use Value: Fast 7.0 ns t_d(on) and 7.0 ns t_f enable tight timing alignment with primary controller; low Q_g reduces gate drive overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR220TRLPBF	Higher V_DS (250 V same), lower R_DS(on) (1.5 Ω), higher Q_g (12 nC), same DPAK package	Better conduction efficiency at >1.5 A but requires stronger gate drive; identical thermal interface and layout	Select when lower on-resistance justifies increased gate drive complexity and cost.
SiHFR214-GE3	Same V_DS, R_DS(on), Q_g, and package; halogen-free construction per Vishay specification 99912	No functional difference; preferred for RoHS-compliant and green manufacturing programs	Choose for strict environmental compliance without design change or performance trade-off.

Compared with IRFR214TRLPBF, IRFR220TRLPBF offers reduced conduction loss but demands higher gate drive current, while SiHFR214-GE3 delivers identical electrical and thermal behavior with enhanced material compliance-making it a drop-in alternative for regulated markets.

Availability

IRFR214TRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and LED lighting systems requiring stable component supply across extended production lifecycles.

Supply support for IRFR214TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFR214TRLPBF belongs to Vishay's third-generation power MOSFET product line engineered for high-voltage switching with optimized R_DS(on)-Q_g trade-offs and rugged avalanche performance in surface-mount form factors.

FAQ

What is the maximum continuous drain current for IRFR214TRLPBF at 100 °C case temperature?

The IRFR214TRLPBF supports 1.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package when mounted on standard FR-4 PCB without additional heatsinking. The linear derating factor is 0.20 W/°C above 25 °C case temperature, allowing predictable power handling across operating conditions. Always verify junction temperature using R_thJC = 5.0 °C/W and actual power dissipation in your layout.

Does IRFR214TRLPBF have a built-in body diode, and what are its key parameters?

Yes, IRFR214TRLPBF integrates a body diode with 2.2 A continuous forward current rating (I_S) and 8.8 A pulsed capability (I_SM). At T_J = 25 °C and I_S = 2.2 A, the forward voltage is ≤2.0 V. Its reverse recovery time (t_rr) ranges from 190 ns to 390 ns, and reverse recovery charge (Q_rr) is 0.65–1.3 μC-critical for synchronous rectification and freewheeling path design. These values are measured under standardized test conditions (IF = 2.7 A, dI/dt = 100 A/μs).

Can IRFR214TRLPBF be used in avalanche mode, and what are the limits?

Yes, IRFR214TRLPBF is explicitly rated for repetitive avalanche operation: 2.2 A repetitive avalanche current (I_AR) and 2.5 mJ repetitive avalanche energy (E_AR). Single-pulse avalanche energy is 190 mJ (E_AS) under defined test conditions (V_DD = 50 V, L = 62 mH, R_g = 25 Ω). Avalanche operation must respect pulse width and duty cycle limits to avoid exceeding T_J(max) = 150 °C, as detailed in Figure 11 of the datasheet.

What is the gate threshold voltage range for IRFR214TRLPBF, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRFR214TRLPBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing noise margin against spurious activation. For full enhancement and minimal R_DS(on), V_GS ≥ 10 V is recommended. Gate drive circuits must deliver 8.2 nC total charge and handle peak currents sufficient to overcome 4.5 nC Miller plateau charge during switching transitions.

Is IRFR214TRLPBF compatible with lead-free reflow soldering processes?

Yes, IRFR214TRLPBF is lead (Pb)-free and RoHS-compliant, qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, per JEDEC J-STD-020. The DPAK (TO-252) package is designed for vapor-phase, infrared, and wave soldering. Thermal pad soldering is recommended using recommended minimum pad dimensions (10.668 mm × 5.690 mm) per Application Note 826 to ensure mechanical reliability and optimal thermal performance.

IRFR214TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR214TRLPBF FAQ

1.How can I place an order for IRFR214TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR214TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR214TRLPBF reliable?

The price and inventory of IRFR214TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR214TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR214TRLPBF?

IRFR214TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR214TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR214TRLPBF?

For technical support, including IRFR214TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214TRLPBF requirements.

6.How does Aetrix verify that IRFR214TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR214TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR214TRLPBF?

All IRFR214TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR214TRLPBF part is unused and in its original packaging.

Return procedure for IRFR214TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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