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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR214TRPBF

Name: IRFR214TRPBF
Brand: Vishay Siliconix
SKU: IRFR214TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR214TRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR214TRPBF.pdf

Description:: MOSFET N-CH 250V 2.2A DPAK

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Product details

Overview

IRFR214TRPBF from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR214TRPBF datasheet, IRFR214TRPBF pinout, IRFR214TRPBF application, or IRFR214TRPBF equivalent, key selection considerations include its 25 W maximum power dissipation at T_C = 25 °C, 190 mJ single-pulse avalanche energy, 4.8 V/ns peak diode recovery dV/dt capability, and compatibility with vapor-phase and wave soldering processes.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for high-voltage switching with low conduction loss and robust transient handling. Its dynamic dV/dt rating and unclamped inductive switching (UIS) capability support reliable operation under hard-switching conditions in flyback and buck topologies.

The IRFR214TRPBF integrates a fast-recovery body diode (t_rr = 190–390 ns, Q_rr = 0.65–1.3 μC) and exhibits linear derating of 0.20 W/°C above 25 °C case temperature-enabling thermal design predictability in compact PCB-mounted applications without heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input rails up to 200 V DC with margin for voltage spikes in industrial SMPS
R_DS(on) max	2.0 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 1.3 A continuous drain current
Q_g max	8.2 nC - allows efficient gate drive with standard 5–12 V logic-level controllers
I_D continuous	2.2 A at T_C = 25 °C - suitable for medium-power loads with PCB copper area thermal management
E_AS	190 mJ - withstands unclamped inductive energy in relay driving or motor commutation
dV/dt rating	4.8 V/ns - suppresses false turn-on during high-speed switching in noisy environments
T_J range	−55 to +150 °C - qualified for extended industrial temperature operation

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for automated assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V gate drive; threshold voltage 2.0–4.0 V ensures compatibility with microcontroller GPIO or dedicated gate drivers
D (Drain)	High-side power output	Exposed metal pad connects directly to PCB ground plane or heatsink; carries full load current and dissipates heat
S (Source)	Reference node	Provides return path for load current; used as common reference for gate drive and current sensing

Key Features

Feature	Design Value
Repetitive avalanche rated	2.2 A I_AR, 2.5 mJ E_AR - sustains repeated inductive turn-off stress without degradation
Dynamic dV/dt immunity	4.8 V/ns - prevents spurious turn-on in high dv/dt noise environments like motor drives
Fast switching performance	t_d(on) = 7.0 ns, t_r = 7.6 ns - reduces switching losses in 100–500 kHz power stages
Low gate charge	Q_g = 8.2 nC, Q_gd = 4.5 nC - minimizes driver power and improves efficiency in high-frequency operation
Body diode optimization	t_rr = 190–390 ns, Q_rr = 0.65–1.3 μC - reduces reverse recovery loss and EMI in synchronous rectification

Applications

DC-DC Converter Switch	Motor Driver High-Side
Use Scenario: Step-down (buck) converter in industrial PLC power supplies operating at 100–300 kHz. IC Role / Device Role / Timing Role: Primary high-side switching element controlling energy transfer to output inductor. Use Value: 2.0 Ω R_DS(on) limits conduction loss to <3.4 W at 1.3 A, while 8.2 nC Q_g enables clean 20 ns total switching transitions.	Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor control for factory automation actuators. IC Role / Device Role / Timing Role: Power switch sourcing current to motor winding; driven by isolated gate driver. Use Value: 190 mJ E_AS absorbs inductive kickback during PWM dead-time, eliminating need for external snubbers.
LED Driver Switch	Relay/Solenoid Driver
Use Scenario: Constant-current LED string driver in outdoor signage with 150 V bus voltage. IC Role / Device Role / Timing Role: PWM-controlled current regulator switch in boost topology. Use Value: 250 V V_DS rating provides 50 V margin over 200 V transients; 4.8 V/ns dV/dt immunity prevents false triggering.	Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels. IC Role / Device Role / Timing Role: Low-duty-cycle inductive load switch with fast turn-off to suppress arcing. Use Value: Repetitive avalanche rating (2.2 A I_AR) safely clamps back-EMF without external protection diodes.

DC-DC Converter Switch

Motor Driver High-Side

Use Scenario: Step-down (buck) converter in industrial PLC power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Primary high-side switching element controlling energy transfer to output inductor.

Use Value: 2.0 Ω R_DS(on) limits conduction loss to <3.4 W at 1.3 A, while 8.2 nC Q_g enables clean 20 ns total switching transitions.

Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor control for factory automation actuators.

IC Role / Device Role / Timing Role: Power switch sourcing current to motor winding; driven by isolated gate driver.

Use Value: 190 mJ E_AS absorbs inductive kickback during PWM dead-time, eliminating need for external snubbers.

LED Driver Switch

Relay/Solenoid Driver

Use Scenario: Constant-current LED string driver in outdoor signage with 150 V bus voltage.

IC Role / Device Role / Timing Role: PWM-controlled current regulator switch in boost topology.

Use Value: 250 V V_DS rating provides 50 V margin over 200 V transients; 4.8 V/ns dV/dt immunity prevents false triggering.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels.

IC Role / Device Role / Timing Role: Low-duty-cycle inductive load switch with fast turn-off to suppress arcing.

Use Value: Repetitive avalanche rating (2.2 A I_AR) safely clamps back-EMF without external protection diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR220TRPBF	Higher V_DS = 200 V, lower R_DS(on) = 1.5 Ω, same DPAK package	Optimized for lower-voltage, higher-current 12–48 V systems; reduced conduction loss but lower voltage margin	Select when bus voltage ≤ 150 V and <1.5 Ω on-resistance is critical for thermal budget
SiHFR214-GE3	Identical electrical specs; lead-free/halogen-free construction per JEDEC J-STD-609	No functional difference; preferred for RoHS-compliant production with stricter material compliance requirements	Choose for new designs requiring halogen-free qualification or dual-sourcing flexibility within Vishay's portfolio

Compared with IRFR214TRPBF, IRFR220TRPBF offers lower on-resistance at reduced voltage rating-better for 48 V systems-but sacrifices 50 V headroom; SiHFR214-GE3 matches all electrical parameters while adding halogen-free compliance, making it a drop-in alternative for environmentally regulated programs.

Availability

IRFR214TRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, LED lighting, and relay/solenoid driving requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRFR214TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR214TRPBF belongs to Vishay's third-generation power MOSFET product line, engineered for demanding industrial and automotive-qualified power switching applications requiring fast switching, avalanche robustness, and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current for IRFR214TRPBF at 100 °C case temperature?

The IRFR214TRPBF supports 1.4 A continuous drain current at T_C = 100 °C, derived from its 2.2 A rating at 25 °C and linear derating factor of 0.20 W/°C. This value reflects thermal limitations of the DPAK package mounted on standard FR-4 PCB without heatsinking, and must be validated against actual board layout and ambient conditions in final design.

Does IRFR214TRPBF have a specified body diode reverse recovery time?

Yes, the IRFR214TRPBF specifies body diode reverse recovery time (t_rr) as 190–390 ns at T_J = 25 °C, I_F = 2.7 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching loss and EMI in synchronous rectifier or half-bridge configurations where the intrinsic diode conducts during dead time.

Is IRFR214TRPBF compatible with lead-free reflow soldering processes?

Yes, IRFR214TRPBF is qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, per Vishay's package specification. The DPAK (TO-252) construction supports vapor phase, infrared, and wave soldering-making it suitable for modern SMT assembly lines compliant with IPC-J-STD-020.

What is the gate-source threshold voltage range for IRFR214TRPBF?

The gate-source threshold voltage (V_GS(th)) for IRFR214TRPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers while maintaining noise immunity against false triggering in electrically noisy industrial environments.

Can IRFR214TRPBF be paralleled for higher current handling?

Yes, IRFR214TRPBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing between devices. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling-verified in Vishay's application notes for multi-MOSFET configurations.

IRFR214TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR214TRPBF FAQ

1.How can I place an order for IRFR214TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR214TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR214TRPBF reliable?

The price and inventory of IRFR214TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR214TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR214TRPBF?

IRFR214TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR214TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR214TRPBF?

For technical support, including IRFR214TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214TRPBF requirements.

6.How does Aetrix verify that IRFR214TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR214TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR214TRPBF?

All IRFR214TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR214TRPBF part is unused and in its original packaging.

Return procedure for IRFR214TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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