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Vishay Siliconix IRFR214TRPBF-BE3
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- Part No.:
- IRFR214TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR214TRPBF-BE3.pdf
- Description:
- N-CHANNEL 250V
- Quantity:
- Payment:
- Shipping:
Inventory:5,198
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Product details
Overview
IRFR214TRPBF-BE3 from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR214TRPBF-BE3 datasheet, IRFR214TRPBF-BE3 pinout, IRFR214TRPBF-BE3 application, or IRFR214TRPBF-BE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB thermal performance data to support layout validation and reliability analysis.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon die geometry to achieve low RDS(on) while maintaining high dV/dt immunity (4.8 V/ns) and unclamped inductive switching capability. Its 250 V VDS rating supports off-line and high-bus applications up to 200 V DC.
The device integrates a robust intrinsic body diode with 190–390 ns reverse recovery time and 0.65–1.3 μC Qrr, enabling efficient synchronous rectification and flyback snubberless operation without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports 200 V DC bus designs with 25 % voltage margin for transients |
| RDS(on) max | 2.0 Ω at VGS = 10 V, ID = 1.3 A - Enables ≤2.6 W conduction loss at 2.2 A continuous current |
| Qg max | 8.2 nC - Allows fast turn-on with <7 ns delay using 24 Ω gate resistor and 12 V drive |
| EAS | 190 mJ single-pulse - Withstands unclamped inductive energy in relay drivers and solenoid controls |
| RthJC | 5.0 °C/W - Enables 25 W power dissipation with ≤125 °C junction rise over case at 25 °C ambient |
| ID cont @ TC = 100 °C | 1.4 A - Defines safe operating area for thermally constrained PCB-mounted use |
| VGS(th) | 2.0–4.0 V - Compatible with standard 5 V and 3.3 V logic-level gate drivers |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper; 3-pin configuration with G–D–S terminal order viewed from top side (marking side), compatible with vapor-phase and infrared reflow profiles per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–10 V logic-level signals; 100 nA leakage ensures stable off-state under high-impedance bias |
| D (Drain) | High-side power node | Exposed metal tab connects internally to drain; must be soldered to ≥1"² FR-4 copper pour for 2.5 W PCB-mount dissipation |
| S (Source) | Reference node / return path | Provides low-inductance source connection; internal LS = 7.5 nH limits high-dI/dt ringing in hard-switching topologies |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.2 A IAR, 2.5 mJ EAR - Enables reliable operation in inductive load switching without external clamping |
| Dynamic dV/dt immunity | 4.8 V/ns - Prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations |
| Fast switching | 7.0 ns td(on), 7.6 ns tr, 16 ns td(off), 7.0 ns tf - Reduces switching losses in 100–500 kHz SMPS designs |
| Low gate charge | Qgs = 1.8 nC, Qgd = 4.5 nC - Minimizes Miller-induced shoot-through risk and gate driver power demand |
| Body diode soft recovery | Qrr = 0.65–1.3 μC, trr = 190–390 ns - Lowers EMI and reduces snubber losses in flyback and LLC resonant converters |
Applications
| Industrial Motor Control | DC-DC Converter Switch |
|---|---|
|
Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; handles 2.2 A continuous and 8.8 A pulsed loads. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during abrupt current interruption, eliminating need for external freewheeling diodes. |
Use Scenario: Primary-side switch in isolated 12 V input, 5 V/3 A flyback converter for industrial sensor modules. IC Role / Device Role / Timing Role: High-voltage power switch operating at 250 kHz with 200 V reflected output voltage. Use Value: 4.8 V/ns dV/dt immunity prevents spurious turn-on during transformer leakage spike events, improving system stability. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
|
Use Scenario: High-side current regulation for 24 V LED strings in outdoor signage with ambient temperature up to 85 °C. IC Role / Device Role / Timing Role: Linear-mode adjustable current sink with thermal foldback protection. Use Value: 1.4 A continuous current at 100 °C case temperature enables compact heatsink-free design in sealed enclosures. |
Use Scenario: Diode-replacement OR-ing element in redundant 24 V DC power distribution for PLC backplanes. IC Role / Device Role / Timing Role: Low-loss forward conduction path with body diode providing automatic reverse blocking. Use Value: 2.0 Ω RDS(on) yields <0.5 V drop at 2.2 A, cutting conduction loss by >60 % versus Schottky diode alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220TRPBF-BE3 | Higher VDS = 200 V, lower RDS(on) = 1.5 Ω, same DPAK package and pinout | Not suitable for 250 V systems; preferred where lower conduction loss dominates over voltage margin | Select IRFR220TRPBF-BE3 only if bus voltage remains ≤180 V and thermal budget demands sub-1.6 Ω on-resistance |
| SiHFR214-GE3 | Identical electrical specs and DPAK footprint; differs only in halogen-free plating and alternate wafer fab location | No functional difference; accepted where RoHS/REACH compliance requires lead-free/halogen-free materials | Choose SiHFR214-GE3 when material declaration requirements mandate halogen-free construction |
Compared with IRFR214TRPBF-BE3, IRFR220TRPBF-BE3 trades voltage headroom for lower conduction loss, while SiHFR214-GE3 maintains identical performance with enhanced environmental compliance-neither offers pin-to-pin replacement without verifying board-level plating and sourcing requirements.
Availability
IRFR214TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, and LED driver applications requiring stable component supply across extended production lifecycles.
Supply support for IRFR214TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR214TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for ruggedized switching in space-constrained surface-mount power stages demanding low RDS(on), fast dynamics, and repeatable avalanche endurance.
FAQ
What is the maximum continuous drain current for IRFR214TRPBF-BE3 at 100 °C case temperature?
The IRFR214TRPBF-BE3 supports 1.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.2 A at 25 °C using a factor of 0.20 W/°C, and assumes proper PCB copper thermal management per the datasheet's 1" square FR-4 mounting condition. Exceeding this current risks junction overheating beyond 150 °C.
Does IRFR214TRPBF-BE3 have a logic-level gate drive requirement?
The IRFR214TRPBF-BE3 has a gate threshold voltage range of 2.0–4.0 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement to its rated RDS(on) of 2.0 Ω requires VGS = 10 V; at 5 V, RDS(on) increases significantly and is not guaranteed. For optimal conduction efficiency, a 10 V gate drive is recommended.
Can IRFR214TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, the IRFR214TRPBF-BE3 is explicitly rated for repetitive avalanche operation: 2.2 A IAR and 2.5 mJ EAR at TJ ≤ 150 °C. This capability is validated per test conditions in Figure 11 and allows safe operation in inductive switching circuits without external clamping, provided pulse width and duty cycle remain within thermal limits.
What is the thermal resistance from junction to ambient for IRFR214TRPBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR214TRPBF-BE3 exhibits RthJA = 50 °C/W. This value enables 2.5 W power dissipation with a 125 °C junction-to-ambient rise, aligning with its 2.5 W maximum power rating under PCB-mount conditions. Performance degrades rapidly with smaller copper areas or non-FR-4 substrates.
How does the body diode performance of IRFR214TRPBF-BE3 compare to external Schottky diodes?
The IRFR214TRPBF-BE3 body diode features VSD = 2.0 V at 2.2 A and Qrr = 0.65–1.3 μC, offering lower forward drop than most 250 V Schottkys but higher recovery charge. It is suitable for low-frequency freewheeling (≤20 kHz), yet less ideal than dedicated ultrafast diodes in high-frequency synchronous rectification due to its 190–390 ns trr.
IRFR214TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR214TRPBF-BE3 FAQ
1.How can I place an order for IRFR214TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR214TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR214TRPBF-BE3 reliable?
The price and inventory of IRFR214TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR214TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR214TRPBF-BE3?
IRFR214TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR214TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR214TRPBF-BE3?
For technical support, including IRFR214TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR214TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR214TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR214TRPBF-BE3?
All IRFR214TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR214TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR214TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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