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Vishay Siliconix IRFR214TRRPBF
- Part No.:
- IRFR214TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR214TRRPBF.pdf
- Description:
- MOSFET N-CH 250V 2.2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,392
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Product details
Overview
IRFR214TRRPBF from Vishay Siliconix is a 250 V, 2.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR214TRRPBF datasheet, IRFR214TRRPBF pinout, IRFR214TRRPBF application, or IRFR214TRRPBF equivalent, key selection criteria include its 250 V VDS, 2.2 A continuous drain current at TC = 25 °C, 190 mJ single-pulse avalanche energy, dV/dt capability of 4.8 V/ns, and PCB-mount thermal resistance of 50 °C/W-critical for high-reliability mid-voltage switching designs.
Technical Context
This third-generation trench MOSFET uses optimized silicon structure to deliver low RDS(on) with robust avalanche performance and fast switching (7.0 ns turn-on delay, 7.6 ns rise time). Its dynamic dV/dt rating and body diode recovery time (190–390 ns) support reliable operation in inductive load circuits without external snubbers.
The device integrates a monolithic body diode with 2.0 V forward voltage at 2.2 A and 0.65–1.3 μC reverse recovery charge, enabling efficient freewheeling in synchronous and asynchronous topologies. Thermal design is enabled by 5.0 °C/W junction-to-case resistance and defined PCB-mount derating (0.020 W/°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Maximum blocking voltage for mid-voltage DC bus applications up to 200 V nominal. |
| RDS(on) @ VGS = 10 V | 2.0 Ω - Conduction loss of ~4.8 W at 2.2 A, defining thermal limits in surface-mount layouts. |
| ID (continuous, TC = 25 °C) | 2.2 A - Usable current level before thermal derating begins; supports 1–2 A typical loads with margin. |
| Qg | 8.2 nC - Gate drive energy requirement determines driver strength needed for <10 ns switching transitions. |
| EAS | 190 mJ - Single-pulse unclamped inductive energy handling enables robustness in relay/motor drive faults. |
| dV/dt (peak diode recovery) | 4.8 V/ns - Limits parasitic turn-on risk during high-speed commutation with inductive loads. |
| RthJA (PCB mount) | 50 °C/W - Enables 2.5 W power dissipation on 1" FR-4 board, guiding copper area and thermal pad design. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.28 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level drive; 1.8 nC Qgs ensures fast turn-on with standard gate drivers. |
| Drain (D) | High-side power output | Exposed metal tab-must be connected to PCB ground plane or heatsink for thermal and electrical return path. |
| Source (S) | Power reference node | Common return for load current and gate drive loop; low-inductance routing critical for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.2 A IAR, 2.5 mJ EAR - Sustains repeated inductive switching stress without degradation in motor or solenoid drivers. |
| Dynamic dV/dt rating | 4.8 V/ns - Prevents false triggering during fast voltage transients in noisy industrial environments. |
| Fast switching | 7.0 ns td(on), 7.0 ns tf - Reduces switching losses in 100–500 kHz SMPS and Class-D amplifier outputs. |
| Surface-mount (DPAK) | Compatible with vapor-phase and IR reflow - Enables automated assembly and thermal coupling to PCB copper. |
| Low Qgd/Qg ratio | 4.5/8.2 = 55 % - Improves Miller immunity and hard-switching stability in high-side configurations. |
Applications
| DC-DC Converter Switch | Motor Drive High-Side Switch |
|---|---|
Use Scenario: Step-down (buck) converter in industrial PLC power supplies operating at 200 kHz with 24–48 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated by PWM controller. Use Value: 2.0 Ω RDS(on) minimizes conduction loss at 1.5 A load; 8.2 nC Qg enables clean 200 kHz switching with minimal gate drive loss. |
Use Scenario: High-side switch in brushed DC motor H-bridge for HVAC damper actuation (24 V, 1.2 A). IC Role / Device Role / Timing Role: Controls motor voltage polarity and enables braking via body diode conduction during off-time. Use Value: 190 mJ EAS withstands inductive kickback during rapid direction reversal; 2.0 V VSD reduces freewheeling loss. |
| LED Driver Switch | Power Supply OR-ing FET |
Use Scenario: Constant-current LED string driver in commercial lighting, switching at 100 kHz with 36 V bus. IC Role / Device Role / Timing Role: Series pass element regulating current through feedback-controlled PWM dimming. Use Value: Low Qgd (4.5 nC) suppresses Miller-induced shoot-through; 250 V VDS provides margin over 36 V + transients. |
Use Scenario: Reverse-polarity protection and OR-ing in dual-input 24 V industrial power system with hot-swap capability. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode; source tied to supply, drain to load, gate driven by ideal diode controller. Use Value: 2.0 Ω RDS(on) cuts forward drop to <50 mV at 25 mA, eliminating heat sink need vs. 0.4 V diode drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220TRPBF | Higher VDS (250 V same), lower RDS(on) (1.5 Ω), higher Qg (12 nC) | Better conduction efficiency at >1.5 A, but slower switching and higher gate drive demand | Prefer when thermal budget is tight and switching frequency ≤100 kHz |
| SiHFR214-GE3 | Identical electrical specs; halogen-free, RoHS-compliant variant with GE3 suffix | No functional difference; qualified for automotive-grade traceability and material compliance | Select when halogen-free certification or Vishay's GE3 manufacturing line is required |
Compared with IRFR214TRRPBF, IRFR220TRPBF trades higher gate charge for lower conduction loss-suited to thermally constrained linear-regulator replacements-while SiHFR214-GE3 offers identical performance with enhanced environmental compliance for regulated markets.
Availability
IRFR214TRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and LED lighting systems requiring stable component supply across multi-year production cycles.
Supply support for IRFR214TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFR214TRRPBF belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized switching in space-constrained surface-mount applications demanding fast transition, avalanche tolerance, and consistent parametric stability.
FAQ
What is the maximum continuous drain current for IRFR214TRRPBF at 100 °C case temperature?
The IRFR214TRRPBF supports 1.4 A continuous drain current at TC = 100 °C, derived from its 2.2 A rating at 25 °C and linear derating factor of 0.20 W/°C. This reflects thermal limitation under sustained high-temperature PCB mounting conditions-not ambient temperature-and assumes proper copper pour and thermal pad implementation per Vishay AN826.
Does IRFR214TRRPBF require a gate resistor for safe operation?
Yes, IRFR214TRRPBF requires an external gate resistor to control dI/dt and suppress ringing. With 8.2 nC total gate charge and low internal inductance (LD = 4.5 nH, LS = 7.5 nH), a 10–24 Ω resistor is recommended per Vishay's switching test circuit (Fig. 9) to limit peak gate current and ensure stable 7.0 ns turn-on delay without oscillation.
Can IRFR214TRRPBF be used in avalanche mode repeatedly?
Yes, IRFR214TRRPBF is explicitly repetitive avalanche rated: it supports 2.2 A repetitive avalanche current (IAR) and 2.5 mJ repetitive avalanche energy (EAR) under conditions where pulse width is limited by junction temperature (TJ ≤ 150 °C). This makes it suitable for unclamped inductive switching in relay drivers and solenoid controls without external clamping.
What is the body diode forward voltage of IRFR214TRRPBF at 2.2 A?
The body diode forward voltage (VSD) of IRFR214TRRPBF is 2.0 V maximum at TJ = 25 °C and IS = 2.2 A with VGS = 0 V. This value increases with temperature and current-typical curves show ~2.3 V at 125 °C-so freewheeling loss must be evaluated across the full operating range in buck or H-bridge designs.
Is IRFR214TRRPBF compatible with lead-free reflow soldering processes?
Yes, IRFR214TRRPBF is lead (Pb)-free and RoHS-compliant, qualified for standard lead-free reflow profiles with peak temperature up to 260 °C for 10 seconds. Its DPAK (TO-252) package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60 % RH without baking prior to assembly.
IRFR214TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR214TRRPBF FAQ
1.How can I place an order for IRFR214TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR214TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR214TRRPBF reliable?
The price and inventory of IRFR214TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR214TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR214TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR214TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR214TRRPBF?
IRFR214TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR214TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR214TRRPBF?
For technical support, including IRFR214TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR214TRRPBF requirements.
6.How does Aetrix verify that IRFR214TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR214TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR214TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR214TRRPBF?
All IRFR214TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR214TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR214TRRPBF part is unused and in its original packaging.
Return procedure for IRFR214TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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