Vishay Siliconix IRFR220PBF-BE3
- Part No.:
- IRFR220PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR220PBF-BE3.pdf
- Description:
- N-CHANNEL 200V
- Quantity:
- Payment:

- Shipping:

Inventory:3,000
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Product details
Overview
IRFR220PBF-BE3 from Vishay Siliconix is a 200 V, 4.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR220PBF-BE3 datasheet, IRFR220PBF-BE3 pinout, IRFR220PBF-BE3 application, or IRFR220PBF-BE3 equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 4.8 A continuous drain current at TC = 25 °C, 3.0 °C/W junction-to-case thermal resistance, dV/dt immunity of 5.0 V/ns, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining high ruggedness. Its dynamic dV/dt rating and unclamped inductive switching capability support reliable operation in hard-switched topologies without external snubbers.
The device integrates a fast-recovery body diode with trr = 150–300 ns and Qrr = 0.91–1.8 μC, enabling efficient synchronous rectification and freewheeling in buck and flyback converters. Gate drive requirements are defined by Qgs = 3.0 nC and Qgd = 7.9 nC, supporting standard 10 V logic-level driving.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC in offline or industrial bus applications |
| RDS(on) | 0.80 Ω @ VGS = 10 V - enables <1.1 W conduction loss at 3.3 A, suitable for medium-power SMPS |
| ID (continuous) | 4.8 A @ TC = 25 °C - requires heatsinking or PCB copper area for sustained >3 A operation |
| Qg | 14 nC - determines gate driver current demand and switching speed in hard-switched circuits |
| EAS | 161 mJ - allows safe single-pulse inductive energy handling without external clamping |
| RthJC | 3.0 °C/W - enables direct thermal coupling to heatsink via exposed drain pad in DPAK package |
| dV/dt | 5.0 V/ns - resists false turn-on in high-noise, fast-rising edge environments |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized 3-pin layout optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal; 3.0 nC gate-source charge defines Miller plateau timing |
| D (Drain) | High-side power output | Exposed metal pad on underside-must be connected to system ground plane or heatsink for thermal management |
| S (Source) | Reference node / return path | Provides low-inductance source return; internal source inductance LS = 7.5 nH affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 4.8 A IAR and 4.2 mJ EAR under pulsed inductive loads-enables robust operation without derating in motor drive flyback phases |
| Dynamic dV/dt rating | 5.0 V/ns immunity prevents spurious turn-on during high dv/dt transients in half-bridge or LLC resonant circuits |
| Fast switching | td(on) = 7.2 ns, tr = 22 ns, td(off) = 19 ns, tf = 13 ns - reduces switching losses in 100–500 kHz SMPS designs |
| Body diode with low Qrr | Qrr = 0.91–1.8 μC and trr = 150–300 ns - minimizes reverse recovery loss in synchronous rectifier and freewheeling roles |
| Surface-mount (DPAK) | TO-252 footprint with thermal pad - compatible with IPC-7351B land pattern; recommended pad dimensions: 6.18 mm × 5.69 mm (243 mil × 224 mil) |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V for industrial I/O modules. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with 10 V gate drive. Use Value: 0.80 Ω RDS(on) limits conduction loss to <1.3 W at 4 A, while 14 nC Qg ensures minimal gate drive power at target frequency. | Use Scenario: H-bridge driver for 24 V, 3 A brushed motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling path. Use Value: 161 mJ single-pulse avalanche energy absorbs inductive kickback during PWM turn-off, eliminating need for external clamp diodes. |
| AC-DC Auxiliary Supply | LED Constant-Current Driver |
Use Scenario: Flyback auxiliary supply powering control circuitry in 1 kW server PSU. IC Role / Device Role / Timing Role: Primary-side switch handling 100–150 kHz discontinuous conduction mode (DCM). Use Value: 200 V VDS withstands reflected output voltage plus leakage spikes; 5.0 V/ns dV/dt rating suppresses noise-induced false triggering. | Use Scenario: Constant-current buck driver for 36 V, 700 mA LED strings in street lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled pass transistor regulating average LED current. Use Value: Repetitive avalanche rating (4.8 A IAR) tolerates transient overloads during thermal foldback or open-circuit events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR210PBF | Lower VDS (100 V), lower RDS(on) (1.5 Ω), same DPAK package and pinout | Not suitable for 200 V bus applications; limited to ≤80 V DC systems | Select only when input voltage is capped below 90 V and lower on-resistance is prioritized over voltage margin |
| SiHFR220-GE3 | Identical VDS, RDS(on), Qg, and package; halogen-free, RoHS-compliant variant from same Vishay family | No functional difference; differs only in material compliance and manufacturing location | Preferred for new designs requiring halogen-free certification; drop-in replacement with identical electrical behavior |
Compared with IRFR220PBF-BE3, IRFR210PBF sacrifices voltage rating for lower conduction loss in low-voltage systems, while SiHFR220-GE3 delivers identical performance with enhanced environmental compliance-making it the preferred upgrade path for production continuity and regulatory alignment.
Availability
IRFR220PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply across multi-year production cycles.
Supply support for IRFR220PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR220PBF-BE3 belongs to Vishay's third-generation power MOSFET product line, engineered specifically for rugged, medium-voltage switching in industrial and automotive-qualified power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRFR220PBF-BE3 at 100 °C case temperature?
The IRFR220PBF-BE3 has a continuous drain current rating of 3.0 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied when ambient or board-level thermal conditions prevent the case from remaining at 25 °C. Designers should verify junction temperature using RthJC = 3.0 °C/W and actual power dissipation.
Does IRFR220PBF-BE3 support logic-level gate drive?
No, IRFR220PBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and it is characterized for full enhancement at VGS = 10 V. For reliable RDS(on) = 0.80 Ω operation, a 10 V gate drive is required; 5 V logic signals will result in significantly higher on-resistance and potential thermal runaway.
What is the avalanche energy rating of IRFR220PBF-BE3, and how is it tested?
The IRFR220PBF-BE3 is rated for 161 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, and IAS = 4.8 A. This rating is validated per JEDEC JESD24-11 and confirms the device can safely absorb inductive energy without failure during unclamped inductive switching events.
Can IRFR220PBF-BE3 be used in parallel configurations?
Yes, IRFR220PBF-BE3 is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. To ensure balanced operation, use matched gate resistors, symmetrical PCB layout, and common-source routing to minimize loop inductance differences between parallel units.
What is the thermal resistance from junction to ambient for IRFR220PBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR220PBF-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes no external heatsink and relies on copper area for heat spreading; adding thermal vias under the drain pad or increasing copper area can improve this metric by 15–30 %.
IRFR220PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR220PBF-BE3 FAQ
1.How can I place an order for IRFR220PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR220PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR220PBF-BE3 reliable?
The price and inventory of IRFR220PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR220PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR220PBF-BE3?
IRFR220PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR220PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR220PBF-BE3?
For technical support, including IRFR220PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220PBF-BE3 requirements.
6.How does Aetrix verify that IRFR220PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR220PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR220PBF-BE3?
All IRFR220PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR220PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR220PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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