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Vishay Siliconix IRFR220TRLPBF
- Part No.:
- IRFR220TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR220TRLPBF.pdf
- Description:
- MOSFET N-CH 200V 4.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,415
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Product details
Overview
IRFR220TRLPBF from Vishay Siliconix is a 200 V, 4.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR220TRLPBF datasheet, IRFR220TRLPBF pinout, IRFR220TRLPBF application, or IRFR220TRLPBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low on-resistance with controlled gate charge distribution-Qgd = 7.9 nC and Qgs = 3.0 nC support clean voltage-controlled turn-on/turn-off in hard-switched topologies. Its 150 °C maximum junction temperature and 3.0 °C/W junction-to-case thermal resistance enable high-power density mounting on thermally enhanced PCBs.
The device integrates a fast-recovery body diode (trr = 150–300 ns, Qrr = 0.91–1.8 μC) and is rated for unclamped inductive switching (EAS = 161 mJ), making it suitable for freewheeling and synchronous rectification roles without external diode supplementation in moderate-frequency (<100 kHz) applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 150 V bus designs with 33 % safety margin against transients |
| RDS(on) @ VGS = 10 V | 0.80 Ω - enables ≤11.5 W conduction loss at 3.4 A continuous drain current |
| ID (TC = 25 °C) | 4.8 A - usable up to 3.0 A at 100 °C case temperature with linear derating |
| Qg | 14 nC - determines gate driver current requirement (~1.4 A peak for 10 ns rise time) |
| EAS | 161 mJ - allows safe operation under unclamped inductive load conditions up to 4.8 A |
| trr | 150–300 ns - limits reverse recovery losses during commutation in buck/flyback outputs |
| RthJC | 3.0 °C/W - requires ≥1"² FR-4 copper area for 42 W dissipation at TC = 25 °C |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIO |
| D (Drain) | High-side power terminal | Connected to exposed thermal pad; carries full load current and must be routed over large copper pour for heat dissipation |
| S (Source) | Reference node / return path | Provides ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects switching waveform ringing |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.0 V/ns - suppresses false turn-on during high-slew-rate voltage transients in half-bridge configurations |
| Repetitive avalanche rated | 4.2 mJ per pulse - enables robust operation in inductive load switching without snubber circuits |
| Fast switching | td(on) = 7.2 ns, tf = 13 ns - reduces switching losses in 50–100 kHz SMPS designs |
| Surface-mount (DPAK) | Compatible with vapor-phase and IR reflow - eliminates through-hole drilling and supports high-volume SMT production |
| Low Qgd/Qg ratio | 7.9/14 = 56 % - improves Miller immunity and enables stable operation with moderate gate resistance (Rg = 18–25 Ω) |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input buck converter delivering 3–5 A output at 50–100 kHz switching frequency. IC Role / Device Role / Timing Role: Primary high-side switch controlling energy transfer into output inductor; operates in hard-switched PWM mode. Use Value: 0.80 Ω RDS(on) minimizes conduction loss; 14 nC Qg enables efficient gate drive with low-power controllers. |
Use Scenario: H-bridge driver for 24 V brushed motors in industrial actuators, requiring bidirectional control and regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 4.8 A and pulsed 19 A currents during stall or startup. Use Value: Repetitive avalanche rating protects against inductive kickback during rapid direction reversal; body diode trr < 300 ns reduces braking losses. |
| AC-DC Auxiliary Supply | LED Constant-Current Driver |
Use Scenario: Flyback auxiliary supply powering control circuitry in 3 kW industrial inverters, operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side switch managing energy storage in transformer; subjected to 200 V reflected transients. Use Value: 200 V VDS rating accommodates 160 V reflected voltage plus 25 % margin; EAS = 161 mJ handles leakage inductance spikes. |
Use Scenario: Buck-based constant-current LED driver for high-bay lighting (36–72 V string, 700 mA–1.2 A). IC Role / Device Role / Timing Role: PWM-controlled current regulator switch; conducts during ON-time, freewheels via internal body diode during OFF-time. Use Value: Integrated 1.8 V VSD body diode reduces forward drop vs. external Schottky; Qrr < 1.8 μC limits recovery loss at 1–3 kHz dimming frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220PbF-BE3 | Same die, identical RDS(on), Qg, and avalanche ratings; differs only in tape-and-reel packaging (TRLPBF = tape/reel/lead-free/halogen-free; PbF-BE3 = lead-free with alternate manufacturing location) | No functional difference; both qualified for surface-mount reflow per JEDEC J-STD-020 | Select IRFR220TRLPBF for automated pick-and-place with standard 12 mm tape; choose IRFR220PbF-BE3 only if legacy reel format or BE3 facility traceability is required. |
| SiHFR220-GE3 | Same Vishay DPAK footprint and electrical specs (200 V, 4.8 A, 0.80 Ω), but manufactured using Gen III TrenchFET process with tighter RDS(on) distribution (typ. 0.72 Ω) and lower Qgd (7.5 nC) | Offers marginally improved efficiency in high-frequency switching; identical thermal and avalanche performance | Prefer SiHFR220-GE3 for new designs targeting lowest possible conduction + switching loss; IRFR220TRLPBF remains optimal for cost-sensitive, volume production with established qualification. |
Compared with IRFR220PbF-BE3, IRFR220TRLPBF provides identical electrical performance in a standardized tape-and-reel format optimized for SMT lines; versus SiHFR220-GE3, it trades minor Qgd and RDS(on) improvements for broader legacy design compatibility and lower unit cost in high-volume procurement.
Availability
IRFR220TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFR220TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRFR220TRLPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-reliability industrial and automotive-qualified power conversion systems demanding low RDS(on), fast switching, and avalanche robustness.
FAQ
What is the maximum continuous drain current for IRFR220TRLPBF at 100 °C case temperature?
The IRFR220TRLPBF supports 3.0 A continuous drain current at TC = 100 °C, derived from its 4.8 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value assumes proper PCB copper area (≥1"² FR-4) and ambient airflow per Vishay's thermal guidelines in datasheet S21-0771-Rev. G.
Does IRFR220TRLPBF require a gate resistor for stable switching?
Yes, IRFR220TRLPBF benefits from an external gate resistor (typically 18–25 Ω) to dampen ringing caused by LS = 7.5 nH and LD = 4.5 nH parasitics. Vishay's switching test circuit (Fig. 10a) specifies Rg = 18 Ω for characterization, and this value balances switching speed against EMI and shoot-through risk in half-bridge layouts.
Is IRFR220TRLPBF compatible with logic-level microcontrollers?
IRFR220TRLPBF has a gate threshold voltage range of 2.0–4.0 V, enabling turn-on with 3.3 V or 5 V logic signals. However, full enhancement to RDS(on) = 0.80 Ω requires VGS = 10 V; for reliable low-loss operation, a dedicated gate driver or level-shifting circuit is recommended when interfacing with 3.3 V MCUs.
What is the recommended PCB pad layout for IRFR220TRLPBF in DPAK package?
Vishay specifies minimum DPAK pads in Application Note 826: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal pad, with 0.090" (2.29 mm) spacing between gate and source pads. The exposed drain pad must connect to ≥1"² internal or external copper pour to achieve RthJA ≤ 50 °C/W in PCB-mount configuration.
Can IRFR220TRLPBF replace IRFU220 in through-hole designs?
No-IRFR220TRLPBF uses DPAK (TO-252) surface-mount packaging, while IRFU220 uses IPAK (TO-251) straight-lead through-hole packaging. Their footprints, soldering methods, and mechanical mounting are incompatible. For through-hole replacement, use IRFU220PbF or SiHFU220-GE3 instead.
IRFR220TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR220TRLPBF FAQ
1.How can I place an order for IRFR220TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR220TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR220TRLPBF reliable?
The price and inventory of IRFR220TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR220TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR220TRLPBF?
IRFR220TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR220TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR220TRLPBF?
For technical support, including IRFR220TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220TRLPBF requirements.
6.How does Aetrix verify that IRFR220TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR220TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR220TRLPBF?
All IRFR220TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR220TRLPBF part is unused and in its original packaging.
Return procedure for IRFR220TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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