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Vishay Siliconix IRFR220TRPBF-BE3
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- Part No.:
- IRFR220TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR220TRPBF-BE3.pdf
- Description:
- N-CHANNEL 200V
- Quantity:
- Payment:
- Shipping:
Inventory:3,833
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Product details
Overview
IRFR220TRPBF-BE3 from Vishay Siliconix is a 200 V, 4.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR220TRPBF-BE3 datasheet, IRFR220TRPBF-BE3 pinout, IRFR220TRPBF-BE3 application, or IRFR220TRPBF-BE3 equivalent, key selection criteria include its 200 V blocking capability, 4.8 A continuous drain current at TC = 25 °C, 3.0 Ω/W junction-to-case thermal resistance, dynamic dV/dt rating of 5.0 V/ns, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining high ruggedness. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, and its 150 ns body diode reverse recovery time supports moderate-frequency hard-switched topologies.
The device integrates a robust intrinsic body diode rated for 4.8 A continuous source-drain current and 19 A pulsed current, with 1.8 V forward voltage at 4.8 A. Its 161 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche energy enable operation in inductive load circuits without external snubbers under defined conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports input rails up to 170 V DC in offline or industrial bus applications |
| RDS(on) | 0.80 Ω @ VGS = 10 V - Enables ≤3.8 W conduction loss at 4.8 A, suitable for thermally constrained PCB-mount designs |
| ID (continuous) | 4.8 A @ TC = 25 °C - Delivers stable output current in compact heatsinkless SMPS or motor gate drive stages |
| Qg | 14 nC - Allows efficient switching at 100–500 kHz with moderate gate driver strength (e.g., TC4420) |
| EAS | 161 mJ - Withstands unclamped inductive energy spikes in relay drivers or solenoid controls without failure |
| RthJC | 3.0 °C/W - Enables direct thermal coupling to copper pour or small heatsink for >30 W power dissipation |
| dV/dt | 5.0 V/ns - Resists false triggering in noisy industrial environments with fast voltage transients |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; requires <3.0 nC gate-source charge for turn-on |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full load current and must be routed over large copper area for heat dissipation |
| S (Source) | Reference/return path | Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects switching waveform ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 4.8 A repetitive avalanche current and 4.2 mJ energy per pulse-eliminates need for external clamping in flyback or buck-boost primary switches |
| Dynamic dV/dt rating | 5.0 V/ns immunity enables reliable operation in high-noise motor drives and industrial inverters without spurious turn-on |
| Surface-mount (DPAK) | TO-252 footprint supports vapor-phase/reflow assembly; thermal pad allows ≥42 W power dissipation with proper PCB copper design |
| Fast switching | 7.2 ns turn-on delay + 22 ns rise time enables efficient operation up to 500 kHz in isolated DC-DC converters |
| Body diode with low Qrr | 0.91–1.8 μC reverse recovery charge reduces switching losses and EMI in synchronous rectifier or freewheeling paths |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: 24–48 V input step-down converter delivering 3–5 A to FPGA or ASIC core rails. IC Role / Device Role / Timing Role: High-side switching element in non-synchronous buck topology, operating at 300 kHz with 10 V gate drive. Use Value: 0.80 Ω RDS(on) limits conduction loss to <2 W; 14 nC Qg ensures minimal gate drive power; 200 V rating accommodates 48 V bus with 20 % surge margin. |
Use Scenario: H-bridge half-bridge leg controlling 12–36 V brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switch in PWM-driven motor control, handling bidirectional current up to 4.8 A. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 5.0 V/ns dV/dt immunity prevents shoot-through in noisy factory environments. |
| Industrial Relay/Solenoid Driver | LED Constant-Current Dimming Stage |
Use Scenario: Solid-state replacement for electromechanical relays driving 24 V AC/DC solenoids in PLC I/O modules. IC Role / Device Role / Timing Role: Single-pole power switch activated by microcontroller GPIO, managing 2–4 A inductive loads. Use Value: 161 mJ single-pulse avalanche energy safely clamps stored inductor energy; TO-252 package enables automated placement and thermal relief via PCB copper pour. |
Use Scenario: High-side current sink in constant-current LED driver for architectural lighting (20–40 V strings). IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element regulating LED current up to 4.8 A. Use Value: Low RDS(on) minimizes dropout voltage and self-heating; body diode forward voltage (1.8 V) supports reverse polarity protection when used in high-side configuration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR210TRPBF-BE3 | Lower 100 V VDS, 0.95 Ω RDS(on), same DPAK package and pinout | Restricted to ≤80 V bus systems; higher conduction loss reduces efficiency in 48 V applications | Select only for cost-sensitive 24 V designs where 200 V margin is unnecessary |
| SiHFR220-GE3 | Identical VDS, RDS(on), Qg, and avalanche ratings; halogen-free construction, same DPAK package | No functional difference; qualified for RoHS-compliant and green manufacturing programs | Preferred for new designs requiring halogen-free compliance without performance trade-off |
Compared with IRFR220TRPBF-BE3, IRFR210TRPBF-BE3 offers lower voltage rating and higher on-resistance-making it unsuitable for 48 V+ systems-while SiHFR220-GE3 delivers identical electrical performance with halogen-free materials, enabling drop-in compliance upgrades without layout or thermal redesign.
Availability
IRFR220TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and solid-state relay applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFR220TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR220TRPBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for ruggedness, fast switching, and cost-effective surface-mount power control in space-constrained industrial systems.
FAQ
What is the maximum continuous drain current rating for IRFR220TRPBF-BE3 at 100 °C case temperature?
The IRFR220TRPBF-BE3 supports 3.0 A continuous drain current at TC = 100 °C, derated linearly from 4.8 A at 25 °C using a factor of 0.33 W/°C. This reflects real-world thermal limits when mounted on standard FR-4 PCBs with limited copper area, and must be verified against actual board layout and ambient conditions in the final design.
Does IRFR220TRPBF-BE3 have a specified body diode reverse recovery time?
Yes, the IRFR220TRPBF-BE3 body diode has a typical reverse recovery time (trr) of 150 ns and maximum of 300 ns at TJ = 25 °C, IF = 4.8 A, and dI/dt = 100 A/μs. This value is critical for estimating switching losses and EMI in freewheeling or synchronous rectifier configurations where the body diode conducts.
Is IRFR220TRPBF-BE3 compatible with lead-free reflow soldering processes?
Yes, IRFR220TRPBF-BE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its DPAK (TO-252) package is designed for vapor-phase, infrared, and wave soldering, and the "-BE3" suffix confirms Pb-free and halogen-free compliance per Vishay's material categorization standards.
What is the gate threshold voltage range for IRFR220TRPBF-BE3?
The IRFR220TRPBF-BE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures full enhancement with standard 5 V or 10 V logic-level gate drivers while providing noise margin against false turn-on in electrically noisy environments.
Can IRFR220TRPBF-BE3 be paralleled with identical units for higher current handling?
Yes, IRFR220TRPBF-BE3 is explicitly characterized for ease of paralleling due to its positive temperature coefficient of RDS(on). As junction temperature rises, on-resistance increases-promoting natural current sharing among parallel devices without external balancing components, provided gate drive and layout symmetry are maintained.
IRFR220TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR220TRPBF-BE3 FAQ
1.How can I place an order for IRFR220TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR220TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR220TRPBF-BE3 reliable?
The price and inventory of IRFR220TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR220TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR220TRPBF-BE3?
IRFR220TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR220TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR220TRPBF-BE3?
For technical support, including IRFR220TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR220TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR220TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR220TRPBF-BE3?
All IRFR220TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR220TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR220TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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