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Vishay Siliconix IRFR220TRRPBF
- Part No.:
- IRFR220TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR220TRRPBF.pdf
- Description:
- MOSFET N-CH 200V 4.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,940
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Product details
Overview
IRFR220TRRPBF from Vishay Siliconix is a 200 V, 4.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR220TRRPBF datasheet, IRFR220TRRPBF pinout, IRFR220TRRPBF application, or IRFR220TRRPBF equivalent, key selection criteria include its 200 V blocking capability, 4.8 A continuous drain current at TC = 25 °C, 3.0 Ω/W junction-to-case thermal resistance, dV/dt immunity up to 5.0 V/ns, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon structure for low conduction loss and high dynamic ruggedness. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, while the 7.9 nC gate-drain charge enables controlled turn-off and reduced switching losses in hard-switched topologies.
The device integrates a fast-recovery body diode (trr = 150–300 ns, Qrr = 0.91–1.8 μC) and is rated for unclamped inductive switching (EAS = 161 mJ), making it suitable for flyback, buck, and half-bridge configurations without external snubbers in moderate-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input voltages up to 160 V DC in offline or industrial bus applications |
| RDS(on) @ VGS = 10 V | 0.80 Ω - delivers ≤11.5 W conduction loss at 4.8 A, enabling compact thermal design |
| ID (continuous, TC = 25 °C) | 4.8 A - sufficient for <100 W switch-mode power stages with adequate heatsinking |
| Qg | 14 nC - determines gate driver current requirement (~1.4 A peak for 10 ns rise time) |
| EAS | 161 mJ - allows safe operation under unclamped inductive load transients without failure |
| RthJC | 3.0 °C/W - enables direct thermal coupling to PCB copper or heatsink for efficient power dissipation |
| trr | 150–300 ns - minimizes reverse recovery loss and EMI in synchronous rectification or freewheeling paths |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 0–10 V logic-level signal; 100 nA leakage ensures low static power consumption |
| D (Drain) | High-side power output | Exposed metal pad on bottom surface-must be connected to large copper area for thermal and current handling |
| S (Source) | Reference/return path | Common node for gate drive return and current sensing; low-inductance layout critical for switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overloads (IAR = 4.8 A, EAR = 4.2 mJ) without derating |
| Dynamic dV/dt immunity | 5.0 V/ns rating prevents false turn-on in noisy high-dV/dt environments like motor drives |
| Fast switching performance | td(on) = 7.2 ns, tr = 22 ns, td(off) = 19 ns - reduces switching losses in 100–500 kHz SMPS |
| Low Qgd/Qg ratio | 7.9/14 = 56% - improves Miller immunity and enables stable operation with moderate gate resistance |
| Surface-mount (DPAK) | Compatible with standard reflow profiles; thermal pad supports >40 W power dissipation with 1"² FR-4 copper |
Applications
| DC-DC Converters | Motor Control |
|---|---|
Use Scenario: Step-down (buck) regulator in industrial PLC power supplies operating from 48 V bus. IC Role / Device Role / Timing Role: Main switching FET controlling energy transfer into output inductor; operates at 250 kHz with 30–70% duty cycle. Use Value: 0.80 Ω RDS(on) limits conduction loss to <1.8 W at 3 A load; avalanche rating handles inductor current overshoot during startup. | Use Scenario: Half-bridge high-side switch driving 24 V brushed DC motor in HVAC actuator. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional control via complementary low-side FET; commutated at ≤20 kHz. Use Value: 5.0 V/ns dV/dt immunity prevents shoot-through during fast voltage transitions; body diode trr < 300 ns reduces cross-conduction loss. |
| Power Inverters | LED Drivers |
Use Scenario: Low-power 12 V to 24 V push-pull inverter for emergency lighting systems. IC Role / Device Role / Timing Role: Primary-side switching element in transformer-coupled topology; gated with isolated PWM signal. Use Value: 161 mJ single-pulse avalanche energy absorbs reflected inductive spikes from transformer leakage inductance. | Use Scenario: Constant-current buck LED driver for architectural lighting (12–24 V input, 350 mA output). IC Role / Device Role / Timing Role: Synchronous rectifier and current-regulating switch operating in continuous conduction mode at 300 kHz. Use Value: Low Qg (14 nC) and fast turn-off (tf = 13 ns) minimize switching loss at high frequency; 200 V rating provides margin against line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR220PbF | Same die, identical RDS(on), Qg, and avalanche specs; differs only in tape-and-reel packaging (TR vs. TRR) and lead finish (PbF vs. PbF-BE3) | No functional difference; both rated for surface-mount use in DPAK | Select IRFR220TRRPBF when reel quantity and BE3 alternate manufacturing location compliance are required. |
| SiHFR220-GE3 | Same electrical specs per Vishay documentation; halogen-free construction and RoHS-compliant plating; identical DPAK footprint and pinout | Preferred for automotive or green-electronics programs requiring halogen-free materials | Choose SiHFR220-GE3 when halogen-free certification (per IEC 61249-2-21) is mandatory for end-product compliance. |
Compared with IRFR220TRRPBF, IRFR220TRRPBF offers identical switching and thermal performance but with BE3 facility traceability, while SiHFR220-GE3 adds halogen-free assurance without sacrificing ruggedness or efficiency-making all three suitable for industrial power stages where reliability and regulatory alignment are prioritized.
Availability
IRFR220TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply across production lifecycles.
Supply support for IRFR220TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power components for industrial and automotive markets.
The IRFR220TRRPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-efficiency, high-ruggedness switching in space-constrained surface-mount power systems.
FAQ
What is the maximum continuous drain current rating for IRFR220TRRPBF at 100 °C case temperature?
The IRFR220TRRPBF has a continuous drain current rating of 3.0 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied when ambient or board-level thermal conditions prevent maintaining TC ≤ 25 °C. Designers should verify junction temperature using RthJC = 3.0 °C/W and actual power dissipation.
Does IRFR220TRRPBF support logic-level gate drive?
No, IRFR220TRRPBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires VGS = 10 V to achieve the specified RDS(on) of 0.80 Ω. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and conduction loss; a dedicated gate driver or level-shifter is recommended for robust switching.
What is the avalanche energy rating of IRFR220TRRPBF, and how is it tested?
The IRFR220TRRPBF is rated for 161 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, and IAS = 4.8 A. This rating is verified per JEDEC JESD24-1 and confirms the device can safely absorb inductive energy without failure during transient events such as load dump or inductor saturation.
Can IRFR220TRRPBF be paralleled with other MOSFETs for higher current handling?
Yes, IRFR220TRRPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. To ensure balanced operation, use matched gate resistors, symmetrical PCB layout, and common-source Kelvin connections. Thermal coupling between devices must also be uniform to avoid thermal runaway.
What is the recommended PCB pad layout for IRFR220TRRPBF in DPAK (TO-252) package?
Vishay recommends a minimum 0.224" × 0.420" (5.69 mm × 10.67 mm) exposed copper pad for the drain tab, with thermal vias (≥6× 0.3 mm diameter) connecting to inner or backside ground planes. The Application Note 826 specifies this layout to achieve RthJA ≤ 50 °C/W in PCB-mount configuration and sustain >2.5 W continuous power dissipation.
IRFR220TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR220TRRPBF FAQ
1.How can I place an order for IRFR220TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR220TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR220TRRPBF reliable?
The price and inventory of IRFR220TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR220TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR220TRRPBF?
IRFR220TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR220TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR220TRRPBF?
For technical support, including IRFR220TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220TRRPBF requirements.
6.How does Aetrix verify that IRFR220TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR220TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR220TRRPBF?
All IRFR220TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR220TRRPBF part is unused and in its original packaging.
Return procedure for IRFR220TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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