Vishay Siliconix IRFR224

Overview

IRFR224 from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR224 datasheet, IRFR224 pinout, IRFR224 application, or IRFR224 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and layout validation.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining high dV/dt immunity (4.8 V/ns) and robust unclamped inductive switching capability (130 mJ single-pulse E_AS). Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under varying drive conditions.

The device integrates a fast-recovery body diode with t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC, enabling efficient synchronous rectification and flyback operation without external diode supplementation in moderate-frequency topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on underside for thermal conduction; 3-pin configuration optimized for automated placement and vapor-phase reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR224, IRFR220 offers reduced voltage margin and higher conduction loss but lower gate charge, while SiHFR224-GE3 provides identical performance with environmental compliance-making it the preferred drop-in replacement for future-proofed designs.

Availability

IRFR224 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, LED driver switching, and power supply OR-ing requiring stable component supply across multi-year production cycles.

Supply support for IRFR224 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR224 belongs to Vishay's third-generation power MOSFET family engineered for rugged switching in harsh environments-emphasizing avalanche survivability, fast dV/dt immunity, and surface-mount thermal efficiency.

FAQ

What is the maximum continuous drain current for IRFR224 at 100 °C case temperature?

The IRFR224 supports 2.4 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.33 W/°C and P_D = 42 W at T_C = 25 °C. This value assumes proper PCB copper area and thermal vias per Vishay's DPAK layout recommendations in Application Note 826. The IRFR224 must be derated further when mounted solely on FR-4 without heatsinking.

Does IRFR224 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFR224 integrates a monolithic body diode with t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC at T_J = 25 °C, I_F = 4.4 A, and dI/dt = 100 A/μs. These values directly impact dead-time selection in half-bridge circuits and determine reverse recovery loss in hard-switched converters. The IRFR224 body diode is not optimized for ultrafast applications but suffices for ≤250 kHz flyback and forward topologies.

Can IRFR224 be used in avalanche mode repeatedly, and what are the limits?

Yes, the IRFR224 is explicitly rated for repetitive avalanche operation with I_AR = 3.8 A and E_AR = 4.2 mJ per pulse, provided pulse width is limited by junction temperature (T_J ≤ 150 °C). This capability is validated per Figure 11 in the datasheet and enables reliable use in inductive load switching without external clamping. The IRFR224's avalanche rating is not a one-time specification-it is designed for sustained cyclic stress in solenoid and relay drivers.

What is the gate threshold voltage range for IRFR224, and how does it affect drive circuit design?

The IRFR224 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, meaning it begins conducting significantly above 2 V but requires ≥10 V for full enhancement (R_DS(on) = 1.1 Ω). Drive circuits must supply ≥12 V to ensure margin against noise and temperature drift. The IRFR224 is not a logic-level MOSFET; using 5 V TTL drive results in excessive conduction loss and thermal runaway under load.

Is IRFR224 pin-compatible with IRFU224, and what is the key mechanical difference?

No, IRFR224 is not pin-compatible with IRFU224. While both share identical electrical specifications, IRFR224 uses the DPAK (TO-252) surface-mount package with gull-wing leads and an exposed drain pad, whereas IRFU224 uses the IPAK (TO-251) through-hole package with straight leads and no thermal pad. The IRFR224 requires SMT reflow and PCB copper area for thermal management; IRFU224 needs wave soldering and board-level heatsinking.