Vishay Siliconix IRFR224PBF
- Part No.:
- IRFR224PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR224PBF.pdf
- Description:
- MOSFET N-CH 250V 3.8A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,142
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Product details
Overview
IRFR224PBF from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR224PBF datasheet, IRFR224PBF pinout, IRFR224PBF application, or IRFR224PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, PCB-mount power dissipation limits, and validated alternative options for high-voltage discrete switching designs.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon structure to achieve low on-resistance with robust avalanche capability (EAS = 130 mJ, IAR = 3.8 A). Its dynamic dV/dt rating of 4.8 V/ns supports reliable operation in noisy high-speed switching environments.
The device integrates a fast-recovery body diode (trr = 200–400 ns, Qrr = 0.93–1.9 μC) and exhibits linear thermal derating (0.33 W/°C case-mounted, 0.020 W/°C PCB-mounted), enabling predictable thermal management in compact surface-mount layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports primary-side switching in offline SMPS up to 200 V DC bus with margin |
| RDS(on) | 1.1 Ω @ VGS = 10 V - Enables <1.2 W conduction loss at 3.3 A continuous drain current |
| Qg | 14 nC - Determines gate drive power requirement; compatible with standard 1-A peak drivers |
| ID (TC = 25 °C) | 3.8 A - Maximum continuous current with heatsink; derates to 2.4 A at 100 °C case temperature |
| EAS | 130 mJ - Withstands unclamped inductive energy spikes without failure in relay/motor drive snubberless designs |
| trr | 200–400 ns - Limits reverse recovery losses during hard-switched bridge commutation |
| RthJC | 3.0 °C/W - Enables direct thermal path to heatsink; junction-to-case resistance supports >10 W dissipation with modest heatsinking |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount footprint optimized for vapor-phase or IR reflow per Vishay recommended pads (6.18 mm × 5.69 mm thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 2.7 nC gate-source charge enables fast turn-on with minimal Miller effect |
| D (Drain) | High-side power terminal | Connected to exposed thermal pad; carries full load current and must be routed with low-inductance copper pour |
| S (Source) | Reference and return path | Common node for gate drive return and current sensing; internal source inductance (LS = 7.5 nH) affects switching waveform fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 3.8 A repetitive avalanche current and 4.2 mJ energy-enables reliable operation in inductive load switching without external clamping |
| Dynamic dV/dt immunity | Rated for 4.8 V/ns-prevents false turn-on in high dv/dt environments such as half-bridge totem-pole configurations |
| Fast switching performance | Turn-on delay 7.0 ns, rise time 13 ns, fall time 12 ns-reduces switching losses in 100–500 kHz power stages |
| Low gate charge | Qgd = 7.8 nC - Minimizes Miller plateau duration and improves controllability during hard switching |
| Surface-mount DPAK | TO-252 outline with gull-wing leads-supports automated assembly and provides superior thermal transfer vs. through-hole IPAK variants |
Applications
| Motor Drive | DC-DC Converter |
|---|---|
Use Scenario: Brushed DC motor H-bridge half-leg switch in industrial actuators operating from 24–48 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel power switch controlling motor direction and PWM speed regulation. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 1.1 Ω RDS(on) keeps conduction loss under 1.5 W at 3.5 A motor stall current. | Use Scenario: Synchronous buck converter primary switch in 12 V input, 5 V/3 A output telecom power module. IC Role / Device Role / Timing Role: Main switching transistor handling high-frequency (300 kHz) hard-switched duty cycle transitions. Use Value: 14 nC Qg and 12 ns fall time minimize switching loss; fast body diode (trr = 200 ns) reduces shoot-through risk during dead-time. |
| Power Supply Protection | LED Driver |
Use Scenario: Overcurrent and short-circuit protection switch in 24 V industrial PLC output stage. IC Role / Device Role / Timing Role: Load disconnect FET triggered by fault detection circuitry to isolate downstream circuits. Use Value: 250 V VDS withstands back-EMF transients; 130 mJ single-pulse avalanche energy handles worst-case fault energy without destruction. | Use Scenario: Constant-current dimming switch for high-brightness LED strings in architectural lighting (20–40 V forward voltage). IC Role / Device Role / Timing Role: PWM-controlled series pass element regulating average LED current. Use Value: Low RDS(on) minimizes thermal rise at 2–3 A LED current; DPAK thermal pad enables direct mounting to metal-core PCB for passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220PBF | Lower VDS (200 V), lower RDS(on) (0.8 Ω), same DPAK package and pinout | Not suitable for 250 V bus applications; better efficiency below 150 V DC | Select when system max voltage ≤ 180 V and lower conduction loss is prioritized over voltage margin |
| SiHFR224-GE3 | Same VDS, RDS(on), Qg, and avalanche rating; Pb-free/halogen-free construction per JEDEC J-STD-609 | No functional difference; qualifies for RoHS-compliant and green manufacturing programs | Preferred for new designs requiring lead-free compliance without performance trade-off |
Compared with IRFR224PBF, IRFR220PBF offers lower on-resistance but insufficient voltage headroom for 250 V systems, while SiHFR224-GE3 delivers identical electrical performance with certified environmental compliance-making it the drop-in replacement for regulated production environments.
Availability
IRFR224PBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, power supply protection, and LED driver applications requiring stable component supply across industrial OEM and embedded design cycles.
Supply support for IRFR224PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRFR224PBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-voltage surface-mount switching in industrial power supplies, motor drives, and protection circuits where avalanche robustness and fast switching are critical.
FAQ
What is the maximum continuous drain current for IRFR224PBF at 100 °C case temperature?
The IRFR224PBF supports 2.4 A continuous drain current at TC = 100 °C, based on its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at TC = 25 °C. This value reflects safe operation with adequate heatsinking and accounts for thermal resistance limitations in real-world PCB-mount conditions.
Does IRFR224PBF have a built-in body diode, and what are its key recovery parameters?
Yes, IRFR224PBF integrates a monolithic body diode with trr = 200–400 ns and Qrr = 0.93–1.9 μC at TJ = 25 °C, IF = 4.4 A, and dI/dt = 100 A/μs. These values directly impact switching losses in synchronous rectification and freewheeling paths, making IRFR224PBF suitable for moderate-frequency hard-switched topologies.
Is IRFR224PBF pin-compatible with IRFU224PbF?
No-IRFR224PBF uses DPAK (TO-252) surface-mount packaging with gull-wing leads, while IRFU224PbF uses IPAK (TO-251) through-hole packaging with straight leads. Although both share identical electrical specifications and pin function order (G-D-S), their mechanical footprints and mounting methods are incompatible without PCB redesign.
What is the gate threshold voltage range for IRFR224PBF, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for IRFR224PBF is specified from 2.0 V to 4.0 V at ID = 250 μA. This range confirms logic-level compatibility with 5 V microcontrollers but requires ≥10 V gate drive to achieve full RDS(on) = 1.1 Ω; insufficient drive increases conduction loss and thermal stress in the IRFR224PBF.
Can IRFR224PBF be used in avalanche mode repeatedly, and what are the limits?
Yes, IRFR224PBF is explicitly rated for repetitive avalanche operation: IAR = 3.8 A and EAR = 4.2 mJ per pulse, with pulse width limited by junction temperature. This capability allows safe use in inductive load switching without external snubbers, provided thermal design maintains TJ ≤ 150 °C during avalanche events.
IRFR224PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR224PBF FAQ
1.How can I place an order for IRFR224PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR224PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR224PBF reliable?
The price and inventory of IRFR224PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR224PBF is usually 5 days.
3.What payment methods are accepted for IRFR224PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR224PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR224PBF?
IRFR224PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR224PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR224PBF?
For technical support, including IRFR224PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR224PBF requirements.
6.How does Aetrix verify that IRFR224PBF is sourced from the original manufacturer or authorized distributors?
All IRFR224PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR224PBF meets industry standards.
7.What is the process for return or replacement of IRFR224PBF?
All IRFR224PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR224PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR224PBF part is unused and in its original packaging.
Return procedure for IRFR224PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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