Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR224TRL

Part No.:
IRFR224TRL
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR224TRL.pdf
Description:
MOSFET N-CH 250V 3.8A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,184

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR224TRL from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating - designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR224TRL datasheet, IRFR224TRL pinout, IRFR224TRL application, or IRFR224TRL equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low on-resistance while maintaining high dV/dt immunity (4.8 V/ns) and unclamped inductive switching capability. Its 1.1 Ω RDS(on) and 14 nC Qg support efficient hard-switching up to ~100 kHz in medium-power SMPS topologies.

The device integrates a robust intrinsic body diode with 200–400 ns reverse recovery time and 0.93–1.9 μC Qrr, enabling synchronous rectification and freewheeling operation without external Schottky supplementation in many 24–48 V systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 250 V - supports 200 V bus designs with 25 % safety margin against transients
RDS(on) @ VGS = 10 V 1.1 Ω - enables ≤10 W conduction loss at 3 A continuous drain current
ID (TC = 25 °C) 3.8 A - rated for thermally limited operation on 1" FR-4 PCB with 2.5 W dissipation
Qg 14 nC - determines gate drive energy and switching transition times in PWM circuits
EAS 130 mJ - allows safe single-pulse inductive turn-off without snubber in relay/motor drive
TJ Range −55 to +150 °C - qualified for industrial ambient and under-hood automotive auxiliary loads
dV/dt Rating 4.8 V/ns - resists false turn-on during high-slew-rate commutation in half-bridge configurations

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper; standard 3-pin configuration with G–D–S terminal order when viewed from top (marking side), lead pitch 2.29 mm, body size 6.22 × 6.73 mm.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; 2.0–4.0 V threshold enables compatibility with 3.3 V/5 V microcontrollers via gate driver
D (Drain) High-side power node Connected to internal die backside; soldered to large PCB copper pour for thermal management and EMI reduction
S (Source) Reference node / return path Provides Kelvin sense point for current monitoring; ties to ground plane or low-side shunt resistor

Key Features

Feature Design Value
Repetitive avalanche rated Supports 3.8 A IAR and 4.2 mJ EAR - enables reliable operation in inductive load switching without external clamping
Dynamic dV/dt immunity 4.8 V/ns - prevents spurious turn-on during fast voltage transitions in bridge-leg applications
Fast switching performance 7 ns td(on), 13 ns tr, 20 ns td(off), 12 ns tf - reduces switching losses in high-frequency DC-DC converters
Low gate charge 14 nC Qg with 2.7 nC Qgs and 7.8 nC Qgd - minimizes driver power and simplifies gate drive design
Body diode with controlled Qrr 0.93–1.9 μC Qrr and 200–400 ns trr - enables predictable freewheeling in buck and flyback topologies

Applications

Industrial Motor Control DC-DC Converter Switch

Use Scenario: Driving 24 V brushed DC motors in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation.

Use Value: 3.8 A continuous rating and 15 A pulsed capability handle stall currents; avalanche rating absorbs back-EMF spikes during abrupt stop.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Hard-switched main power transistor operating at 200 kHz with 50 % duty cycle.

Use Value: 1.1 Ω RDS(on) limits conduction loss to <1.3 W; 14 nC Qg ensures clean 20 ns switching edges with 10 Ω gate resistor.

LED Driver Circuit Power OR-ing Controller

Use Scenario: Constant-current dimming stage for high-brightness LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: High-side PWM modulator regulating average LED current via duty-cycle control.

Use Value: Fast 12 ns fall time enables precise 1–1000 Hz dimming resolution; 150 °C max junction temperature accommodates enclosed fixture environments.

Use Scenario: Diode-replacement switch in redundant 24 V power supply OR-ing circuit for industrial controllers.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward drop and heat generation.

Use Value: 1.1 Ω RDS(on) yields <100 mV drop at 1 A - cutting conduction loss by >70 % vs. 0.4 V Schottky; body diode supports reverse current blocking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR220PbF 200 V VDS, 4.2 A ID, 0.8 Ω RDS(on) - lower voltage rating but lower on-resistance Not suitable for 200+ V bus applications; preferred in 12–48 V DC-DC where lower RDS(on) improves efficiency Select IRFR220PbF only if system maximum VDS stress remains below 160 V and lower conduction loss is prioritized over voltage margin.
SiHFR224-GE3 Identical VDS, RDS(on), Qg, and package; Vishay's newer halogen-free variant with same die and DPAK footprint No functional difference; fully interchangeable in new designs requiring RoHS-compliant materials SiHFR224-GE3 is a direct material-compliance upgrade; IRFR224TRL remains valid for legacy BOMs and Pb-free process lines.

Compared with IRFR224TRL, IRFR220PbF trades voltage headroom for lower conduction loss in low-voltage systems, while SiHFR224-GE3 offers identical electrical performance with updated environmental compliance - neither requires PCB layout changes, but only SiHFR224-GE3 is halogen-free.

Availability

IRFR224TRL is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRFR224TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR224TRL belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for rugged switching in space-constrained surface-mount applications demanding low RDS(on), fast transitions, and avalanche survivability.

FAQ

What is the maximum continuous drain current for IRFR224TRL at 100 °C case temperature?

The IRFR224TRL supports 2.4 A continuous drain current at TC = 100 °C, derived from its 3.8 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value assumes proper PCB copper area per Vishay's DPAK mounting guidelines and accounts for thermal resistance from junction to case (RthJC = 3.0 °C/W).

Does IRFR224TRL require a gate driver for microcontroller-level PWM control?

IRFR224TRL has a gate threshold voltage range of 2.0–4.0 V and is specified for 10 V gate drive, so direct connection to 3.3 V or 5 V GPIO is insufficient for full enhancement. A gate driver (e.g., TC4420 or similar) is required to deliver ≥10 V and sufficient peak current to charge its 14 nC gate capacitance within nanoseconds and avoid linear-mode heating.

Can IRFR224TRL be used in avalanche mode repeatedly without degradation?

Yes - IRFR224TRL is explicitly rated for repetitive avalanche operation with IAR = 3.8 A and EAR = 4.2 mJ per pulse, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (150 °C). Data sheet Figure 11 provides the safe operating area under repetitive avalanche conditions.

What is the recommended PCB pad layout for IRFR224TRL's DPAK package?

Vishay recommends a minimum 0.224" × 0.420" (5.69 × 10.67 mm) copper pad for the drain tab of IRFR224TRL, with thermal vias to inner layers. The Application Note 826 document specifies exact dimensions and spacing to ensure mechanical reliability and optimal thermal transfer - critical for sustaining 2.5 W dissipation on FR-4 boards.

How does the body diode performance of IRFR224TRL compare to discrete Schottky diodes?

The IRFR224TRL's integrated body diode has VSD = 1.8 V at 3.8 A and trr = 200–400 ns, making it slower and higher-drop than most Schottky diodes (typically 0.4–0.6 V, <50 ns trr). However, its Qrr of 0.93–1.9 μC is well-characterized and enables predictable snubberless operation in low-frequency freewheeling - unlike Schottky diodes, it avoids thermal runaway at elevated temperatures.

IRFR224TRL Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR224TRL FAQ

1.How can I place an order for IRFR224TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR224TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR224TRL reliable?

The price and inventory of IRFR224TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR224TRL is usually 5 days.

3.What payment methods are accepted for IRFR224TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR224TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR224TRL?

IRFR224TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR224TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR224TRL?

For technical support, including IRFR224TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR224TRL requirements.

6.How does Aetrix verify that IRFR224TRL is sourced from the original manufacturer or authorized distributors?

All IRFR224TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR224TRL meets industry standards.

7.What is the process for return or replacement of IRFR224TRL?

All IRFR224TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR224TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR224TRL part is unused and in its original packaging.

Return procedure for IRFR224TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR224TRL Tags

  • IRFR224TRL
  • IRFR224TRL PDF
  • IRFR224TRL Datasheet
  • IRFR224TRL Specifications
  • IRFR224TRL Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR224TRL
  • Buy IRFR224TRL
  • IRFR224TRL Price
  • IRFR224TRL Distributor
  • IRFR224TRL Supplier
  • IRFR224TRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER