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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR224TRPBF

Name: IRFR224TRPBF
Brand: Vishay Siliconix
SKU: IRFR224TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR224TRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR224TRPBF.pdf

Description:: MOSFET N-CH 250V 3.8A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR224TRPBF from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR224TRPBF datasheet, IRFR224TRPBF pinout, IRFR224TRPBF application, or IRFR224TRPBF equivalent, key selection criteria include its 250 V V_DS, 3.8 A continuous drain current at T_C = 25 °C, 1.1 Ω on-resistance, 130 mJ single-pulse avalanche energy, and DPAK thermal performance with 3.0 °C/W R_thJC.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low R_DS(on) while maintaining high dV/dt immunity (4.8 V/ns) and robust unclamped inductive switching capability. Its gate threshold voltage range (2.0–4.0 V) supports standard 10 V gate drive and ensures stable turn-on under varying temperature conditions.

The device integrates a fast-recovery body diode with t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC, enabling efficient synchronous rectification and flyback operation without external diode supplementation in medium-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V bus applications with margin.
R_DS(on)	1.1 Ω max at V_GS = 10 V, I_D = 2.3 A - Enables low conduction loss in <5 A switching nodes.
Q_g	14 nC max - Determines gate drive power requirement; compatible with standard MOSFET drivers at ≤500 kHz.
I_D (continuous)	3.8 A at T_C = 25 °C - Delivers reliable output current when mounted on heatsinked PCBs.
E_AS	130 mJ - Supports unclamped inductive switching in relay drivers and solenoid controls without snubbers.
R_thJC	3.0 °C/W max - Enables direct thermal path to heatsink; critical for sustained 2–3 W power dissipation.
t_rr	200–400 ns - Limits reverse recovery loss during hard-switching transitions in buck and flyback topologies.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount footprint optimized for vapor-phase and infrared reflow. Dimensions per JEDEC outline: 6.07 × 6.54 × 2.29 mm (L × W × H), with 2.29 mm lead pitch (e).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level gate drive; 2.0–4.0 V V_GS(th) ensures clean turn-on with standard drivers.
D (Drain)	High-side switch node	Connected to exposed thermal pad; carries full load current and must be routed over large copper pour for heat dissipation.
S (Source)	Reference return	Common return for gate drive and load current; low-inductance layout essential to minimize switching oscillation.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.8 A I_AR and 4.2 mJ E_AR - enables reliable operation in inductive load switching without external clamping.
Dynamic dV/dt rated	4.8 V/ns - prevents false turn-on in noisy high-dV/dt environments such as motor drives and SMPS primary side.
Fast switching	td(on) = 7 ns, tr = 13 ns, td(off) = 20 ns, tf = 12 ns - reduces switching losses in 100–500 kHz power stages.
Low Q_gd/Q_g ratio	7.8/14 = 56% - improves Miller immunity and enables stable operation with moderate gate resistance (R_g = 18–25 Ω).
Surface-mount (DPAK)	Compatible with automated assembly and high-density PCB layouts; thermal pad allows direct heatsinking via soldered copper area.

Applications

DC-DC Converter Primary Switch	Motor Driver High-Side Switch
Use Scenario: 200 V input buck converter delivering 3 A at 12 V output in industrial power supply. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer through power inductor; operates at 250 kHz with hard switching. Use Value: 1.1 Ω R_DS(on) minimizes conduction loss; 130 mJ E_AS absorbs leakage inductance spikes during turn-off.	Use Scenario: 24 V brushed DC motor control in factory automation with PWM at 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch enabling bidirectional current control when paired with low-side driver. Use Value: Repetitive avalanche rating handles back-EMF transients; 4.8 V/ns dV/dt immunity prevents shoot-through during commutation.
LED Driver Constant-Current Switch	AC-DC Flyback Secondary Sync Rectifier
Use Scenario: Constant-current LED string driver for signage lighting with 150 V bus and 350 mA load. IC Role / Device Role / Timing Role: Series-pass switch modulated by current-sense feedback loop; operates in linear and saturated regions. Use Value: Low R_DS(on) reduces thermal stress at 350 mA; 250 V V_DS accommodates surge transients on AC-coupled inputs.	Use Scenario: 12 V/2 A flyback secondary-side synchronous rectifier replacing Schottky diode. IC Role / Device Role / Timing Role: Body-diode-assisted synchronous rectifier driven by self-driven or controller-timed gate signal. Use Value: t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC reduce reverse recovery loss; low Q_g eases gate timing design.

DC-DC Converter Primary Switch

Motor Driver High-Side Switch

Use Scenario: 200 V input buck converter delivering 3 A at 12 V output in industrial power supply.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer through power inductor; operates at 250 kHz with hard switching.

Use Value: 1.1 Ω R_DS(on) minimizes conduction loss; 130 mJ E_AS absorbs leakage inductance spikes during turn-off.

Use Scenario: 24 V brushed DC motor control in factory automation with PWM at 20 kHz.

IC Role / Device Role / Timing Role: High-side N-channel switch enabling bidirectional current control when paired with low-side driver.

Use Value: Repetitive avalanche rating handles back-EMF transients; 4.8 V/ns dV/dt immunity prevents shoot-through during commutation.

LED Driver Constant-Current Switch

AC-DC Flyback Secondary Sync Rectifier

Use Scenario: Constant-current LED string driver for signage lighting with 150 V bus and 350 mA load.

IC Role / Device Role / Timing Role: Series-pass switch modulated by current-sense feedback loop; operates in linear and saturated regions.

Use Value: Low R_DS(on) reduces thermal stress at 350 mA; 250 V V_DS accommodates surge transients on AC-coupled inputs.

Use Scenario: 12 V/2 A flyback secondary-side synchronous rectifier replacing Schottky diode.

IC Role / Device Role / Timing Role: Body-diode-assisted synchronous rectifier driven by self-driven or controller-timed gate signal.

Use Value: t_rr = 200–400 ns and Q_rr = 0.93–1.9 μC reduce reverse recovery loss; low Q_g eases gate timing design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR220TRPBF	200 V V_DS, 4.2 A I_D, 0.8 Ω R_DS(on) - lower voltage rating but lower on-resistance.	Not suitable for 200+ V bus applications; better for 100–150 V DC-DC where lower conduction loss is prioritized.	Select IRFR220TRPBF only if system maximum V_DS stress remains below 160 V with margin.
SiHFR224-GE3	Identical V_DS, R_DS(on), Q_g, and package; Vishay's halogen-free, lead-free variant of same die.	No functional difference; fully interchangeable in RoHS-compliant designs requiring green materials.	SiHFR224-GE3 is a drop-in replacement for IRFR224TRPBF in new designs targeting lead-free compliance.

Compared with IRFR224TRPBF, IRFR220TRPBF trades voltage headroom for lower conduction loss, while SiHFR224-GE3 maintains identical electrical and thermal performance with updated environmental compliance-making it the preferred choice for new production requiring RoHS/lead-free certification.

Availability

IRFR224TRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and LED driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR224TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR224TRPBF belongs to Vishay's third-generation power MOSFET family, engineered for ruggedness, fast switching, and cost-effective integration into medium-power switching circuits.

FAQ

What is the maximum continuous drain current for IRFR224TRPBF at 100 °C case temperature?

The IRFR224TRPBF supports 2.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and requires adequate PCB copper area or heatsinking to maintain junction temperature below 150 °C under sustained load.

Does IRFR224TRPBF have a built-in body diode, and what are its key parameters?

Yes, IRFR224TRPBF includes an integral body diode rated for 3.8 A continuous source-drain current and 15 A pulsed current. Key parameters include V_SD = 1.8 V at I_S = 3.8 A and t_rr = 200–400 ns, making IRFR224TRPBF suitable for freewheeling and synchronous rectification in medium-frequency switching applications.

What is the gate threshold voltage range for IRFR224TRPBF, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRFR224TRPBF is 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while providing noise margin against spurious gate triggering in electrically noisy environments typical of motor drives and industrial power systems.

Can IRFR224TRPBF be used in avalanche mode, and what are the safe operating limits?

Yes, IRFR224TRPBF is repetitively avalanche rated with I_AR = 3.8 A and E_AR = 4.2 mJ per pulse. Safe operation requires limiting pulse width and duty cycle to prevent junction temperature exceedance, as defined in Figure 11 of the datasheet. Single-pulse avalanche energy is rated at 130 mJ, supporting transient suppression in relay and solenoid drive circuits.

What PCB layout recommendations apply to the DPAK thermal pad of IRFR224TRPBF?

The DPAK thermal pad of IRFR224TRPBF must be soldered to a minimum 0.420" × 0.224" (10.67 × 5.69 mm) copper area per Application Note 826. Use multiple thermal vias (≥4×0.3 mm diameter) to inner-layer ground or heatsink planes, and avoid solder mask coverage on the pad to ensure low R_thJA and mechanical reliability during thermal cycling.

IRFR224TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR224TRPBF FAQ

1.How can I place an order for IRFR224TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR224TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR224TRPBF reliable?

The price and inventory of IRFR224TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR224TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR224TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR224TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR224TRPBF?

IRFR224TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR224TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR224TRPBF?

For technical support, including IRFR224TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR224TRPBF requirements.

6.How does Aetrix verify that IRFR224TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR224TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR224TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR224TRPBF?

All IRFR224TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR224TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR224TRPBF part is unused and in its original packaging.

Return procedure for IRFR224TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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