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Vishay Siliconix IRFR224TRPBF-BE3
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- Part No.:
- IRFR224TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR224TRPBF-BE3.pdf
- Description:
- N-CHANNEL 250V
- Quantity:
- Payment:
- Shipping:
Inventory:3,758
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Product details
Overview
IRFR224TRPBF-BE3 from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR224TRPBF-BE3 datasheet, IRFR224TRPBF-BE3 pinout, IRFR224TRPBF-BE3 application, or IRFR224TRPBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery characteristics, and surface-mount layout guidance per Vishay's recommended DPAK pad dimensions.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon structure to achieve low on-resistance while maintaining high dV/dt immunity (4.8 V/ns) and unclamped inductive switching capability. Its 130 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche energy support robust operation under transient overloads without external snubbers.
The device integrates a fast-recovery body diode with 200–400 ns reverse recovery time and 0.93–1.9 μC Qrr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate drive requirements are defined by 2.7 nC Qgs and 7.8 nC Qgd, supporting clean turn-on/turn-off with minimal Miller-induced oscillation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports input rails up to 200 V DC with margin for voltage spikes in industrial SMPS |
| RDS(on) | 1.1 Ω @ VGS = 10 V - enables <1.2 W conduction loss at 3.3 A continuous drain current |
| Qg | 14 nC - determines gate driver power requirement and switching speed in 100–500 kHz applications |
| ID (TC = 25 °C) | 3.8 A - maximum continuous current with heatsink; derates linearly to 2.4 A at 100 °C case temperature |
| EAS | 130 mJ - allows safe operation during unclamped inductive turn-off events without external clamping |
| dV/dt Rating | 4.8 V/ns - ensures noise immunity against parasitic coupling in high-speed switching environments |
| TJ Range | −55 to +150 °C - qualified for extended industrial and automotive under-hood ambient conditions |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for PCB heat spreading using 1" FR-4 square pad per Vishay AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard microcontroller GPIO |
| D (Drain) | High-side power output | Connected to exposed copper thermal pad; carries full load current and dissipates heat into PCB plane |
| S (Source) | Reference and return path | Provides common reference for gate drive and current sensing; internal source inductance 7.5 nH affects high-di/dt ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports ≥106 unclamped inductive cycles at IAR = 3.8 A without degradation |
| Dynamic dV/dt immunity | 4.8 V/ns minimum prevents false turn-on in noisy high-side switch configurations |
| Fast switching performance | Turn-on delay 7.0 ns, rise time 13 ns, fall time 12 ns at VDD = 125 V, RG = 18 Ω |
| Low Qgd/Qg ratio | 7.8/14 = 56% - reduces Miller plateau duration and improves controllability during hard switching |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering; footprint matches JEDEC TO-252AA outline |
Applications
| Industrial Motor Control | DC-DC Converter Switch |
|---|---|
Use Scenario: Driving brushed DC motors in factory automation systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor phase current; operates in hard-switched mode with body diode freewheeling. Use Value: 1.1 Ω RDS(on) minimizes I²R losses at 3 A load; 130 mJ EAS absorbs inductive kickback during PWM off-time. | Use Scenario: Primary-side switch in 24–48 V input isolated flyback or forward converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main power switch turning on/off at 100–300 kHz; handles 250 V blocking and 3.8 A peak current. Use Value: 4.8 V/ns dV/dt rating prevents spurious turn-on from transformer leakage coupling; low Qg eases gate driver selection. |
| LED Driver Power Stage | Power Factor Correction (PFC) |
Use Scenario: Constant-current switching stage in high-bay LED drivers operating from 120/230 V AC rectified inputs. IC Role / Device Role / Timing Role: Low-side switch in buck-derived constant-current regulator; switches at 50–100 kHz with 3.8 A peak load. Use Value: Fast body diode (trr = 200–400 ns) enables efficient freewheeling; 150 °C max junction temperature supports enclosed fixture thermal environments. | Use Scenario: Boost switch in active PFC front-end for industrial AC-DC power modules requiring >95% efficiency. IC Role / Device Role / Timing Role: High-voltage boost switch handling 400 V DC link and 3.8 A average current at 65–130 kHz. Use Value: Repetitive avalanche rating (IAR = 3.8 A, EAR = 4.2 mJ) sustains reliability during line transients and overloads without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220TRPBF-BE3 | Lower VDS (200 V), lower RDS(on) (0.85 Ω), same DPAK package and pinout | Not suitable for 250 V bus applications; better for 100–150 V DC systems with tighter RDS(on) requirements | Select when system DC bus ≤ 180 V and lower conduction loss is prioritized over voltage margin |
| SiHFR224-GE3 | Identical VDS, RDS(on), Qg, and avalanche ratings; Vishay second-source with same DPAK footprint | No functional difference; fully interchangeable in layout and thermal design | Preferred for dual-sourcing strategy; identical electrical and mechanical behavior per Vishay documentation |
Compared with IRFR224TRPBF-BE3, IRFR220TRPBF-BE3 trades voltage headroom for lower on-resistance, while SiHFR224-GE3 offers identical performance with alternate part numbering-making it ideal for supply chain diversification without design change.
Availability
IRFR224TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter power stages, and LED driver switching applications requiring stable component supply across multi-year production cycles.
Supply support for IRFR224TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR224TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage switching efficiency, rugged avalanche performance, and surface-mount manufacturability in cost-sensitive industrial power systems.
FAQ
What is the maximum continuous drain current for IRFR224TRPBF-BE3 at 100 °C case temperature?
The IRFR224TRPBF-BE3 supports 2.4 A continuous drain current at TC = 100 °C, based on its linear derating factor of 0.33 W/°C from the 42 W maximum power dissipation at 25 °C. This value assumes proper PCB copper area per Vishay's DPAK thermal guidelines and accounts for junction-to-case thermal resistance of 3.0 °C/W.
Does IRFR224TRPBF-BE3 require a gate resistor for stable switching?
Yes, IRFR224TRPBF-BE3 benefits from an external gate resistor (typically 10–25 Ω) to control dI/dt and suppress ringing caused by its 7.5 nH internal source inductance and 4.5 nH drain inductance. The datasheet specifies switching times with RG = 18 Ω, confirming that gate resistance directly impacts turn-on delay (7.0 ns), rise time (13 ns), and Miller plateau behavior.
Can IRFR224TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, IRFR224TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 3.8 A and EAR = 4.2 mJ per pulse, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (150 °C). This capability eliminates need for external avalanche clamps in well-designed inductive load circuits.
What is the body diode forward voltage of IRFR224TRPBF-BE3 at 3.8 A?
The body diode forward voltage (VSD) of IRFR224TRPBF-BE3 is 1.8 V maximum at TJ = 25 °C and IS = 3.8 A with VGS = 0 V. This parameter directly impacts conduction loss during freewheeling intervals in buck, flyback, and half-bridge topologies where the intrinsic diode conducts.
Is IRFR224TRPBF-BE3 compatible with lead-free reflow soldering processes?
Yes, IRFR224TRPBF-BE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds. Its DPAK (TO-252) package meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is designed for vapor-phase, infrared, and wave soldering per Vishay's packaging specifications.
IRFR224TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR224TRPBF-BE3 FAQ
1.How can I place an order for IRFR224TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR224TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR224TRPBF-BE3 reliable?
The price and inventory of IRFR224TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR224TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR224TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR224TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR224TRPBF-BE3?
IRFR224TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR224TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR224TRPBF-BE3?
For technical support, including IRFR224TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR224TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR224TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR224TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR224TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR224TRPBF-BE3?
All IRFR224TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR224TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR224TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR224TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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