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Vishay Siliconix IRFR224TRR
- Part No.:
- IRFR224TRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR224TRR.pdf
- Description:
- MOSFET N-CH 250V 3.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,505
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Product details
Overview
IRFR224TRR from Vishay Siliconix is a 250 V, 3.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR224TRR datasheet, IRFR224TRR pinout, IRFR224TRR application, or IRFR224TRR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and validated alternative options for high-reliability power stage design.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining robust avalanche capability (EAS = 130 mJ, IAR = 3.8 A). Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, and its dynamic dV/dt rating (4.8 V/ns) enables stable operation in noisy high-speed switching environments.
The device integrates a fast-recovery body diode (trr = 200–400 ns, Qrr = 0.93–1.9 μC) with controlled reverse recovery behavior, reducing switching losses in synchronous rectification and freewheeling applications. Thermal resistance is specified as RthJC = 3.0 °C/W (junction-to-case) and RthJA = 50 °C/W (PCB mount), enabling reliable 2.5 W dissipation on 1" FR-4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Maximum blocking voltage before breakdown; suitable for 200 V bus systems with margin. |
| RDS(on) | 1.1 Ω @ VGS = 10 V, ID = 2.3 A - Defines conduction loss in linear and switching modes; impacts thermal rise at rated current. |
| Qg | 14 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching speed trade-off. |
| ID (TC = 25 °C) | 3.8 A - Continuous drain current under ideal heatsink conditions; derates to 2.4 A at 100 °C case temperature. |
| EAS | 130 mJ - Single-pulse avalanche energy rating; enables safe operation during inductive load switching transients without external snubbers. |
| trr | 200–400 ns - Body diode reverse recovery time; directly affects switching loss and EMI in hard-switched topologies. |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface requirement for thermal management. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for PCB heat spreading and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires ≤ ±20 V drive; 2.7 nC gate-source charge defines Miller plateau duration. |
| D | Drain | Main power output; electrically and thermally connected to exposed copper pad; carries full load current and avalanche energy. |
| S | Source | Reference node for gate drive and current sensing; internal source inductance (LS = 7.5 nH) affects switching waveform ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 3.8 A repetitive avalanche current (IAR) and 4.2 mJ energy (EAR) without degradation-enables robust overvoltage protection in unregulated inductive loads. |
| Dynamic dV/dt rating | 4.8 V/ns immunity ensures reliable turn-off under high dv/dt stress (e.g., in half-bridge configurations), minimizing false triggering. |
| Fast switching | Turn-on delay (7.0 ns), rise time (13 ns), turn-off delay (20 ns), and fall time (12 ns) enable >500 kHz operation with low gate drive loss. |
| Low RDS(on) × Qg figure of merit | 15.4 Ω·nC - Balances conduction and switching losses for high-efficiency SMPS designs operating at moderate frequencies. |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering; recommended pad layout per AN826 ensures optimal thermal transfer and mechanical reliability. |
Applications
| DC-DC Converters | Motor Control |
|---|---|
Use Scenario: High-efficiency buck converter in industrial PLC power supplies, operating at 200 kHz with 24–48 V input. IC Role / Device Role / Timing Role: Synchronous rectifier switch handling continuous 3.5 A output current with low RDS(on) and fast body diode recovery. Use Value: Reduces conduction loss by 35% vs. comparable 2 Ω MOSFETs and cuts switching loss via 14 nC Qg, improving overall efficiency by ≥1.2% at full load. |
Use Scenario: H-bridge driver for 24 V brushed DC motors in automated gate actuators, requiring bidirectional current and stall protection. IC Role / Device Role / Timing Role: Low-side switch with repetitive avalanche capability to absorb back-EMF during sudden motor stop or reversal. Use Value: Eliminates need for external flyback diodes due to 130 mJ single-pulse avalanche energy and 3.8 A IAR, simplifying BOM and layout. |
| Power Inverters | Industrial Lighting |
Use Scenario: Half-bridge leg in 120 VAC offline LED driver inverters, switching at 40 kHz with 250 V peak bus voltage. IC Role / Device Role / Timing Role: High-side switch subjected to rapid dv/dt transitions and capacitive coupling; relies on 4.8 V/ns dV/dt rating for noise immunity. Use Value: Prevents spurious turn-on during commutation, reducing shoot-through risk and improving system reliability without added gate clamping circuitry. |
Use Scenario: Dimmable constant-current LED driver for street lighting, using PWM-controlled MOSFET to regulate 2 A string current. IC Role / Device Role / Timing Role: Linear-mode current regulator with thermal stability ensured by 150 °C max junction temperature and 3.0 °C/W RthJC. Use Value: Maintains consistent light output across ambient temperatures from −40 °C to +85 °C, with no derating below 2.4 A up to 100 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220TRPbF | Lower VDS (200 V), lower RDS(on) (0.8 Ω), same DPAK package and pinout. | Not suitable for 250 V bus systems; acceptable only in ≤180 V applications where lower conduction loss is prioritized. | Select IRFR220TRPbF only when maximum blocking voltage requirement is ≤200 V and thermal headroom allows tighter RDS(on) benefit. |
| SiHFR224-GE3 | Identical VDS, RDS(on), Qg, and avalanche ratings; Vishay's newer halogen-free variant with same TO-252 footprint. | No functional difference; fully interchangeable in existing designs; preferred for RoHS-compliant production. | Choose SiHFR224-GE3 for new designs requiring lead-free/halogen-free compliance; IRFR224TRR remains valid for legacy qualification. |
Compared with IRFR224TRR, IRFR220TRPbF trades off voltage rating for lower on-resistance, limiting use in higher-bus applications, while SiHFR224-GE3 offers identical electrical performance with updated environmental compliance-making it the direct material upgrade path without layout or validation changes.
Availability
IRFR224TRR is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and industrial lighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFR224TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFR224TRR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage industrial switching applications demanding avalanche robustness, fast switching, and surface-mount manufacturability.
FAQ
What is the maximum continuous drain current for IRFR224TRR at 100 °C case temperature?
The IRFR224TRR supports 2.4 A continuous drain current at TC = 100 °C, derived from its 3.8 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value reflects thermal limits under typical PCB-mount conditions and must be validated against actual board layout and airflow. The IRFR224TRR datasheet specifies this derating curve in Figure 8.
Does IRFR224TRR have a built-in body diode, and what are its key recovery parameters?
Yes, the IRFR224TRR integrates a monolithic body diode with trr = 200–400 ns and Qrr = 0.93–1.9 μC at TJ = 25 °C, IF = 4.4 A, and dI/dt = 100 A/μs. These values are measured per JEDEC standards and define switching loss contribution during freewheeling. The IRFR224TRR body diode is rated for 3.8 A continuous and 15 A pulsed forward current.
Is IRFR224TRR pin-compatible with IRFR220TRPbF?
Yes, IRFR224TRR and IRFR220TRPbF share identical DPAK (TO-252) package dimensions, pin assignment (G-D-S), and mounting footprint per Vishay's package drawings. However, their voltage ratings differ (250 V vs. 200 V), so IRFR220TRPbF cannot substitute in 250 V applications without redesign verification. The IRFR224TRR remains the correct choice for 250 V blocking requirements.
What is the gate threshold voltage range for IRFR224TRR, and how does it affect drive compatibility?
The IRFR224TRR has a gate threshold voltage (VGS(th)) range of 2.0–4.0 V at ID = 250 μA, confirming compatibility with standard 5 V and 10 V logic-level gate drivers. It is not a logic-level MOSFET optimized for 3.3 V drive; using 3.3 V may result in incomplete turn-on and elevated RDS(on). The IRFR224TRR is designed for robust 10 V gate drive to ensure full enhancement and minimal conduction loss.
Can IRFR224TRR be used in linear (analog) mode for current regulation?
Yes, the IRFR224TRR is rated for linear-mode operation with a maximum junction temperature of 150 °C and SOA curves provided in Figure 7. Its 3.0 °C/W junction-to-case thermal resistance and 2.5 W PCB-mount power dissipation capability support stable current regulation up to 2.4 A at elevated ambient temperatures. Designers must observe Safe Operating Area limits in the IRFR224TRR datasheet to avoid secondary breakdown.
IRFR224TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR224TRR FAQ
1.How can I place an order for IRFR224TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR224TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR224TRR reliable?
The price and inventory of IRFR224TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR224TRR is usually 5 days.
3.What payment methods are accepted for IRFR224TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR224TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR224TRR?
IRFR224TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR224TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR224TRR?
For technical support, including IRFR224TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR224TRR requirements.
6.How does Aetrix verify that IRFR224TRR is sourced from the original manufacturer or authorized distributors?
All IRFR224TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR224TRR meets industry standards.
7.What is the process for return or replacement of IRFR224TRR?
All IRFR224TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR224TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR224TRR part is unused and in its original packaging.
Return procedure for IRFR224TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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