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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR310

Name: IRFR310
Brand: Vishay Siliconix
SKU: IRFR310
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR310

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR310.pdf

Description:: MOSFET N-CH 400V 1.7A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR310 from Vishay Siliconix is a 400 V, 1.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.6 Ω R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline switch-mode power supplies, and industrial motor control circuits.

For engineers reviewing the IRFR310 datasheet, IRFR310 pinout, IRFR310 application, or IRFR310 equivalent, key selection considerations include its 400 V V_DS, 1.7 A continuous drain current at T_C = 25 °C, 86 mJ single-pulse avalanche energy, 5.0 °C/W junction-to-case thermal resistance, and compatibility with vapor-phase and wave soldering processes.

Technical Context

The IRFR310 employs third-generation trench-gate silicon technology optimized for ruggedness and fast switching in high-voltage unidirectional power switching applications. Its dynamic dV/dt rating of 4.0 V/ns and fully rated avalanche capability support reliable operation under inductive load transients without external snubbers.

This device operates as a single N-channel enhancement-mode MOSFET with gate-source threshold voltage between 2.0 V and 4.0 V, zero gate voltage drain current ≤25 μA at 400 V, and integrated body diode with 1.6 V forward voltage at 1.7 A and 25 °C-enabling synchronous rectification and freewheeling functions in flyback and buck-derived topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 230 VAC offline SMPS and 380 VDC bus applications
R_DS(on)	3.6 Ω @ V_GS = 10 V - enables low conduction loss at 1.0 A drain current in compact PCB layouts
Q_g	12 nC - determines gate drive power requirement and switching speed in hard-switched topologies
I_D (continuous)	1.7 A @ T_C = 25 °C - defines maximum steady-state current handling with adequate heatsinking
E_AS	86 mJ - specifies unclamped inductive switching robustness without external protection
R_thJC	5.0 °C/W - enables thermal design using case temperature measurements for reliability validation
V_GS(th)	2.0–4.0 V - ensures turn-on compatibility with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with FR-4 PCBs using recommended minimum pad dimensions per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires <20 V absolute max gate-source voltage and low-inductance routing to minimize ringing
D	Drain	Main high-voltage power terminal; electrically and thermally connected to exposed backside metal pad
S	Source	Reference node for gate drive and current sensing; forms return path for body diode conduction

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under repeated inductive switching stress without derating or external clamping
Dynamic dV/dt rating	4.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients
Surface-mount (DPAK)	Supports automated assembly and high-density layout while maintaining 25 W power dissipation capability
Fully avalanche rated	Guarantees specified E_AS = 86 mJ and I_AR = 1.7 A under defined test conditions (fig. 12)
Fast switching	7.9 ns turn-on delay + 9.9 ns rise time enables >100 kHz operation in hard-switched converters

Applications

Offline AC-DC Adapters	Industrial Motor Drives
Use Scenario: 230 VAC input, 12–24 V output flyback converter in wall-mounted power adapters. IC Role / Device Role / Timing Role: Primary-side high-voltage switching element controlling energy transfer via transformer coupling. Use Value: 400 V V_DS margin accommodates line surges up to 350 V peak; 86 mJ E_AS eliminates need for TVS clamping on primary winding.	Use Scenario: Half-bridge driver stage in 24–48 V DC brushless motor controllers for factory automation. IC Role / Device Role / Timing Role: Low-side switching transistor managing PWM-controlled current flow through motor windings. Use Value: 1.7 A continuous current and 3.6 Ω R_DS(on) enable efficient operation at 20 kHz PWM with minimal thermal rise on 1"² PCB mount.
High-Voltage DC-DC Converters	LED Driver Circuits
Use Scenario: Isolated 48 V to 380 V boost converter in telecom power systems. IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or resonant LLC primary stage. Use Value: 12 nC Q_g allows clean gate drive with standard 1 A peak drivers; 5.0 °C/W R_thJC supports thermal management via heatsink attachment to drain pad.	Use Scenario: Constant-current buck regulator driving high-brightness LED strings from 12–24 V supply. IC Role / Device Role / Timing Role: Synchronous rectifier and current regulation switch operating in continuous conduction mode. Use Value: Integrated body diode with 240–540 ns trr and 0.85–1.6 μC Q_rr reduces switching losses and EMI compared to discrete Schottky solutions.

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 230 VAC input, 12–24 V output flyback converter in wall-mounted power adapters.

IC Role / Device Role / Timing Role: Primary-side high-voltage switching element controlling energy transfer via transformer coupling.

Use Value: 400 V V_DS margin accommodates line surges up to 350 V peak; 86 mJ E_AS eliminates need for TVS clamping on primary winding.

Use Scenario: Half-bridge driver stage in 24–48 V DC brushless motor controllers for factory automation.

IC Role / Device Role / Timing Role: Low-side switching transistor managing PWM-controlled current flow through motor windings.

Use Value: 1.7 A continuous current and 3.6 Ω R_DS(on) enable efficient operation at 20 kHz PWM with minimal thermal rise on 1"² PCB mount.

High-Voltage DC-DC Converters

LED Driver Circuits

Use Scenario: Isolated 48 V to 380 V boost converter in telecom power systems.

IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or resonant LLC primary stage.

Use Value: 12 nC Q_g allows clean gate drive with standard 1 A peak drivers; 5.0 °C/W R_thJC supports thermal management via heatsink attachment to drain pad.

Use Scenario: Constant-current buck regulator driving high-brightness LED strings from 12–24 V supply.

IC Role / Device Role / Timing Role: Synchronous rectifier and current regulation switch operating in continuous conduction mode.

Use Value: Integrated body diode with 240–540 ns trr and 0.85–1.6 μC Q_rr reduces switching losses and EMI compared to discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFU310	Same die, but TO-251 (IPAK) through-hole package; 1.7 A continuous current at T_C = 25 °C; identical V_DS, R_DS(on), and Q_g	Requires through-hole assembly and larger board area; better mechanical stability in high-vibration environments	Select IRFU310 when legacy through-hole manufacturing or enhanced mechanical robustness is required over surface-mount density.
SiHFR310-GE3	Same electrical specs and DPAK package; Pb-free and halogen-free construction per Vishay's "GE3" suffix; identical avalanche ratings and thermal performance	No functional difference; meets RoHS/REACH compliance requirements where lead-free is mandated	Select SiHFR310-GE3 for new designs requiring environmental compliance without compromising performance or layout.

Compared with IRFR310, IRFU310 offers identical electrical behavior in a through-hole package for mechanical reliability trade-offs, while SiHFR310-GE3 delivers identical performance with lead-free/halogen-free materials-neither is pin-compatible with IRFR310 due to differing package footprints, but all three share identical die characteristics and safe operating area.

Availability

IRFR310 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and high-voltage DC-DC converters requiring stable component supply across extended production cycles.

Supply support for IRFR310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFR310 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, high-reliability switching in industrial, telecom, and consumer power conversion systems.

FAQ

What is the maximum continuous drain current rating for IRFR310 at 100 °C case temperature?

The IRFR310 has a continuous drain current rating of 1.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and heatsinking in the target application. The IRFR310's linear derating factor is 0.20 W/°C above 25 °C case temperature.

Does IRFR310 have an integrated body diode, and what are its key parameters?

Yes, the IRFR310 includes an integral reverse p–n junction body diode. Key parameters include 1.7 A continuous source-drain current, 6.0 A pulsed diode forward current, 1.6 V forward voltage at 1.7 A and 25 °C, 240–540 ns reverse recovery time, and 0.85–1.6 μC reverse recovery charge. These values are measured under standardized test conditions and define freewheeling performance in inductive switching applications.

What is the gate-source threshold voltage range for IRFR310, and how does it affect drive circuit design?

The IRFR310 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with both 3.3 V and 5 V logic-level gate drivers, though full enhancement requires ≥10 V V_GS to achieve the specified 3.6 Ω R_DS(on). Drive circuits must ensure sufficient gate voltage margin and low-impedance paths to avoid partial turn-on and increased conduction losses.

Can IRFR310 be used in avalanche mode, and what are the limits?

Yes, the IRFR310 is fully and repetitively avalanche rated. It supports 86 mJ single-pulse avalanche energy (E_AS) and 2.5 mJ repetitive avalanche energy (E_AR) under defined test conditions (V_DD = 50 V, L = 52 mH, R_g = 25 Ω). Repetitive operation is limited by junction temperature; pulse width and duty cycle must be constrained to prevent exceeding 150 °C maximum T_J, as shown in Figure 11 of the datasheet.

What is the thermal resistance from junction to ambient for IRFR310 when mounted on a standard PCB?

When mounted on a 1" square FR-4 PCB, the IRFR310 has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W. This value assumes standard PCB copper area and no additional heatsinking. For higher-power operation, thermal design should reference the 5.0 °C/W junction-to-case (R_thJC) value and implement direct thermal interface to an external heatsink via the exposed drain pad.

IRFR310 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR310 FAQ

1.How can I place an order for IRFR310 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR310 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR310 reliable?

The price and inventory of IRFR310 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR310 is usually 5 days.

3.What payment methods are accepted for IRFR310?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR310 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR310?

IRFR310 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR310 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR310?

For technical support, including IRFR310 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR310 requirements.

6.How does Aetrix verify that IRFR310 is sourced from the original manufacturer or authorized distributors?

All IRFR310 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR310 meets industry standards.

7.What is the process for return or replacement of IRFR310?

All IRFR310 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR310, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR310 part is unused and in its original packaging.

Return procedure for IRFR310:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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