Vishay Siliconix IRFR310TRLPBF
- Part No.:
- IRFR310TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR310TRLPBF.pdf
- Description:
- MOSFET N-CH 400V 1.7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,922
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR310TRLPBF from Vishay Siliconix is a 400 V, 1.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.6 Ω RDS(on) at VGS = 10 V, 12 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline switch-mode power supplies, and industrial motor control circuits.
For engineers reviewing the IRFR310TRLPBF datasheet, IRFR310TRLPBF pinout, IRFR310TRLPBF application, or IRFR310TRLPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.
Technical Context
This third-generation trench MOSFET employs ruggedized silicon design with dynamic dV/dt rating up to 4.0 V/ns and full unclamped inductive switching (UIS) capability-enabling reliable operation under transient overvoltage and inductive load switching. Its 86 mJ single-pulse avalanche energy supports robustness in flyback and forward converter topologies.
The device integrates a low-leakage integral body diode (VSD = 1.6 V at 1.7 A, TJ = 25 °C) with 240–540 ns reverse recovery time and 0.85–1.6 μC Qrr, making it suitable for synchronous rectification and freewheeling applications where controlled diode conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Withstands peak line voltages up to 280 VAC RMS in offline SMPS designs without breakdown. |
| RDS(on) | 3.6 Ω @ VGS = 10 V - Enables <1.7 W conduction loss at 1.0 A continuous drain current in compact SMT layouts. |
| Qg | 12 nC - Supports fast switching with moderate gate drive strength (e.g., 1–2 A peak), reducing turn-on/turn-off times to <30 ns total. |
| ID (TC = 25 °C) | 1.7 A - Specifies maximum continuous current when case temperature is maintained at 25 °C via heatsinking or PCB copper area. |
| EAS | 86 mJ - Guarantees single-event avalanche survival under worst-case inductive switching conditions (e.g., transformer leakage energy). |
| TJ Range | −55 to +150 °C - Allows operation in extended industrial environments including motor drives and outdoor power supplies. |
| RthJA (PCB mount) | 50 °C/W - Defines thermal resistance from junction to ambient on 1"² FR-4 PCB, enabling ~2.5 W power dissipation at TA = 25 °C. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Standard lead finish is Pb-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard microcontroller GPIO or dedicated gate drivers. |
| D (Drain) | High-side power terminal | Connected to internal die backside; electrically tied to exposed metal tab-must be isolated from heatsink unless referenced to same potential. |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive; source inductance (LS = 7.5 nH) impacts switching waveform ringing and must be minimized in layout. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports repeated inductive turn-off events up to IAR = 1.7 A and EAR = 2.5 mJ without degradation-critical for reliability in relay drivers and solenoid controls. |
| Dynamic dV/dt immunity | Rated 4.0 V/ns-prevents false turn-on during high-slew-rate transients in half-bridge or LLC resonant converter nodes. |
| Fast switching performance | td(on) = 7.9 ns, tr = 9.9 ns, td(off) = 21 ns, tf = 11 ns-enables >500 kHz operation with minimal overlap loss in hard-switched topologies. |
| Low gate charge asymmetry | Qgd/Qgs = 6.5/1.9 ≈ 3.4-provides predictable Miller plateau timing and simplifies gate driver selection for stable transition control. |
| Surface-mount optimized | DPAK footprint allows vapor-phase reflow compatibility and 1.5 W typical power dissipation on standard PCB copper-reducing need for external heatsinks. |
Applications
| Industrial Motor Control | Offline AC-DC Power Supply |
|---|---|
Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators with PWM-based speed regulation. IC Role / Device Role / Timing Role: High-side or low-side switching element handling bidirectional current up to 1.7 A, operating at 20–100 kHz PWM frequency. Use Value: Avalanche rating ensures survival during motor inductive kickback; low RDS(on) minimizes heat generation in enclosed enclosures without forced air cooling. |
Use Scenario: Primary-side switch in 5–15 W universal-input (85–265 VAC) flyback converters for LED drivers and auxiliary power rails. IC Role / Device Role / Timing Role: Main power switch turning on/off at 65–130 kHz, subjected to 400 V drain stress and unclamped inductive energy during demagnetization. Use Value: 86 mJ EAS and 400 V VDS eliminate need for snubber networks in cost-sensitive designs while maintaining safety margin above 375 V peak line voltage. |
| DC-DC Boost Converter | High-Voltage Relay/Solenoid Driver |
Use Scenario: Boost stage in battery-powered industrial sensors stepping 12 V input to 48 V output for analog front-end biasing. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at fixed 200–500 kHz with duty cycle >50% and high di/dt demands. Use Value: Fast body diode recovery (trr = 240–540 ns) and low Qrr reduce switching losses and EMI during discontinuous conduction mode transitions. |
Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or pneumatic valves in building management systems. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element energizing 24–48 V coils with 100–500 ms pulse duration and frequent on/off cycling. Use Value: Repetitive avalanche capability (IAR = 1.7 A) absorbs coil energy without external clamping diodes-simplifying BOM and improving long-term reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR3707TRLPBF | Lower RDS(on) (2.2 Ω), higher Qg (24 nC), same 400 V rating and DPAK package | Better conduction efficiency at >1 A but slower switching; requires stronger gate drive | Choose for lower steady-state loss in thermally constrained 12–24 V systems where switching frequency ≤100 kHz |
| SiHFR310-GE3 | Identical electrical specs and DPAK package; differs only in Vishay internal part coding and RoHS compliance marking | No functional difference; fully interchangeable in layout and circuit performance | Prefer for new designs requiring GE3 suffix compliance documentation and traceable manufacturing origin |
Compared with IRFR310TRLPBF, IRFR3707TRLPBF trades higher gate charge for lower on-resistance-favoring conduction-limited applications-while SiHFR310-GE3 offers identical performance with updated Vishay material categorization and reporting, making it a drop-in alternative for compliance-driven procurement.
Availability
IRFR310TRLPBF is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and high-voltage relay/solenoid driver applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRFR310TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFR310TRLPBF belongs to Vishay's third-generation power MOSFET family engineered for fast switching, low on-resistance, and repetitive avalanche capability-targeting industrial power conversion, motor drives, and high-reliability embedded power systems.
FAQ
What is the maximum continuous drain current for IRFR310TRLPBF at 100 °C case temperature?
The IRFR310TRLPBF supports 1.1 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.20 W/°C and 25 W maximum power dissipation at TC = 25 °C. This value reflects thermal limitations-not device failure-and assumes adequate PCB copper area or heatsinking per Vishay's DPAK mounting guidelines.
Does IRFR310TRLPBF require a gate resistor for safe operation?
Yes, IRFR310TRLPBF benefits from an external gate resistor (typically 10–47 Ω) to control dI/dt and suppress oscillation caused by LS = 7.5 nH and LD = 4.5 nH parasitics. Without proper gate resistance, ringing during switching can exceed VGS = ±20 V absolute maximum and induce false turn-on due to Miller coupling.
Can IRFR310TRLPBF be used in place of IRFR3707TRLPBF?
No-IRFR310TRLPBF is not a direct replacement for IRFR3707TRLPBF due to higher RDS(on) (3.6 Ω vs. 2.2 Ω) and lower Qg (12 nC vs. 24 nC). Substituting IRFR310TRLPBF may increase conduction loss and thermal stress in high-current applications, though it improves switching speed in high-frequency designs.
What is the body diode forward voltage of IRFR310TRLPBF at 1.7 A and 25 °C?
The body diode forward voltage (VSD) of IRFR310TRLPBF is specified as 1.6 V maximum at IS = 1.7 A and TJ = 25 °C. This parameter directly affects freewheeling losses in buck or flyback topologies and must be considered alongside trr = 240–540 ns and Qrr = 0.85–1.6 μC for total diode conduction loss estimation.
Is IRFR310TRLPBF compatible with lead-free reflow soldering processes?
Yes, IRFR310TRLPBF is qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, per Vishay's package reliability data. Its DPAK (TO-252) construction supports vapor phase, infrared, and wave soldering-provided PCB pad design follows Vishay's recommended minimum dimensions (e.g., 0.224" × 0.180" thermal pad).
IRFR310TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR310TRLPBF FAQ
1.How can I place an order for IRFR310TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR310TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR310TRLPBF reliable?
The price and inventory of IRFR310TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR310TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR310TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR310TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR310TRLPBF?
IRFR310TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR310TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR310TRLPBF?
For technical support, including IRFR310TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR310TRLPBF requirements.
6.How does Aetrix verify that IRFR310TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR310TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR310TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR310TRLPBF?
All IRFR310TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR310TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR310TRLPBF part is unused and in its original packaging.
Return procedure for IRFR310TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR310TRLPBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

