My Inquiry
My Account
Vishay Siliconix IRFR310TRPBF-BE3
- Part No.:
- IRFR310TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR310TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 400V 1.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,869
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR310TRPBF-BE3 from Vishay Siliconix is a 400 V, 1.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.6 Ω RDS(on) at VGS = 10 V, 12 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control snubbers, and industrial power supplies.
For engineers reviewing the IRFR310TRPBF-BE3 datasheet, IRFR310TRPBF-BE3 pinout, IRFR310TRPBF-BE3 application, or IRFR310TRPBF-BE3 equivalent, key selection criteria include its 400 V blocking capability, 25 W case-power dissipation, dV/dt ruggedness of 4.0 V/ns, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and ruggedized operation. It integrates a fully rated body diode with 240–540 ns reverse recovery time and supports unclamped inductive switching up to 86 mJ single-pulse avalanche energy.
The IRFR310TRPBF-BE3 uses planar vertical DMOS technology with a gate threshold voltage range of 2.0–4.0 V and exhibits a positive VDS temperature coefficient (0.47 V/°C), enabling inherent current sharing in parallel configurations without external balancing components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in offline SMPS up to 265 VAC input with safety margin |
| RDS(on) | 3.6 Ω @ VGS = 10 V - enables low conduction loss in <2 A load applications with minimal heatsinking |
| Qg | 12 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers |
| ID (TC = 25 °C) | 1.7 A - continuous drain current rating under ideal heatsink conditions |
| EAS | 86 mJ - allows reliable operation in inductive load switching without external snubbers |
| dV/dt Rating | 4.0 V/ns - ensures immunity to false turn-on during high-speed voltage transients in noisy environments |
| TJ Range | −55 to +150 °C - qualified for extended industrial temperature operation including motor drive enclosures |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for PCB heat spreading using FR-4 1"² copper area per Vishay's recommended layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V drive for full enhancement; ±20 V absolute max rating |
| D | Drain | Main high-side current path; electrically connected to exposed thermal pad; must be routed with low-inductance layout |
| S | Source | Reference node for gate drive and current sensing; internal connection to body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive Avalanche Rated | Enables robust operation in inductive switching circuits without derating for transient overloads |
| Dynamic dV/dt Rating | 4.0 V/ns immunity prevents spurious turn-on during fast voltage transitions in high-noise systems |
| Surface-Mount (DPAK) | Compatible with automated assembly and reflow processes; thermal pad improves PCB heat transfer |
| Fast Switching | Turn-on delay 7.9 ns + rise time 9.9 ns enables >100 kHz operation in hard-switched topologies |
| Body Diode Optimized | 240–540 ns trr and 0.85–1.6 μC Qrr support moderate-frequency freewheeling in buck and flyback converters |
Applications
| Industrial Motor Control | Offline AC-DC Power Supplies |
|---|---|
Use Scenario: Snubberless gate drive for 24–48 V brushed DC motor H-bridge half-bridges in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch handling 1.7 A continuous current with repetitive avalanche tolerance during back-EMF spikes. Use Value: Eliminates need for external clamping diodes or RC snubbers due to 86 mJ single-pulse EAS and 2.5 mJ repetitive EAR rating. | Use Scenario: Primary-side switching element in 15–25 W universal-input flyback converters for industrial sensors. IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 65–100 kHz with VDS = 400 V rating ensuring margin above reflected output voltage. Use Value: 3.6 Ω RDS(on) minimizes conduction loss at light-to-moderate loads while maintaining thermal stability on standard FR-4 PCBs. |
| DC-DC Converter Protection | High-Voltage LED Drivers |
Use Scenario: Overvoltage crowbar protection in 36–72 V telecom DC-DC modules during input surge events. IC Role / Device Role / Timing Role: Fast-acting shunt switch triggered by comparator to clamp rail before downstream IC damage occurs. Use Value: 4.0 V/ns dV/dt rating ensures reliable triggering without false activation during normal switching edges. | Use Scenario: Constant-current series pass switch in isolated 48–120 V LED string drivers for street lighting. IC Role / Device Role / Timing Role: Linear-mode current regulator dissipating up to 2.5 W on PCB (RthJA = 50 °C/W) with no external heatsink. Use Value: 150 °C max TJ and −55 °C min Tstg support outdoor deployment across wide ambient temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR3710TRPBF | Higher VDS (100 V), lower RDS(on) (0.055 Ω), higher Qg (85 nC), same DPAK package | Better suited for low-voltage, high-current DC-DC stages; not rated for 400 V line-referenced circuits | Select only when system VDS stress remains ≤100 V and gate drive can support 85 nC charge |
| SiHFR310-GE3 | Identical electrical specs and DPAK footprint; differs only in lead-free/halogen-free compliance (GE3 vs BE3 marking) | No functional difference; GE3 variant meets RoHS 2011/65/EU Annex II and halogen-free standards | Choose SiHFR310-GE3 for new designs requiring full material compliance documentation |
Compared with IRFR310TRPBF-BE3, IRFR3710TRPBF trades off voltage rating for significantly lower on-resistance and higher gate charge, while SiHFR310-GE3 offers identical performance with updated environmental compliance-making it a direct material-substitution option rather than an electrical alternative.
Availability
IRFR310TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and DC-DC converter protection requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR310TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRFR310TRPBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for demanding industrial and power-conversion applications where avalanche robustness, dV/dt immunity, and surface-mount manufacturability are critical.
FAQ
What is the maximum junction temperature rating for the IRFR310TRPBF-BE3?
The IRFR310TRPBF-BE3 has a maximum operating junction temperature of +150 °C and a storage temperature range of −55 to +150 °C. This rating is validated under specified thermal conditions including PCB-mounted operation with 1"² FR-4 copper area, supporting use in enclosed industrial environments where ambient temperatures may exceed 85 °C.
Does the IRFR310TRPBF-BE3 have a fully rated body diode?
Yes, the IRFR310TRPBF-BE3 incorporates a fully rated intrinsic body diode with specified parameters: continuous source-drain current of 1.7 A, pulsed current up to 6.0 A, forward voltage of 1.6 V at 1.7 A, and reverse recovery time of 240–540 ns. These values are measured and guaranteed per Vishay's S23-0902-Rev. F datasheet.
Can the IRFR310TRPBF-BE3 be used in linear mode for constant-current regulation?
Yes, the IRFR310TRPBF-BE3 supports linear-mode operation with a maximum power dissipation of 2.5 W when PCB-mounted (RthJA = 50 °C/W). Its 150 °C TJ(max) and stable RDS(on) temperature coefficient enable predictable current regulation in LED driver and lab power supply applications.
Is the IRFR310TRPBF-BE3 pin-compatible with other TO-252 N-channel MOSFETs?
The IRFR310TRPBF-BE3 uses standard DPAK (TO-252) pinout (G-D-S) and mechanical dimensions per JEDEC outline, making it physically compatible with most TO-252-packaged N-channel MOSFETs. However, electrical compatibility depends on VDS, RDS(on), Qg, and avalanche ratings-always verify against target circuit requirements before substitution.
What is the gate threshold voltage range for the IRFR310TRPBF-BE3?
The IRFR310TRPBF-BE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing noise margin against false triggering in electrically noisy industrial settings.
IRFR310TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR310TRPBF-BE3 FAQ
1.How can I place an order for IRFR310TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR310TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR310TRPBF-BE3 reliable?
The price and inventory of IRFR310TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR310TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR310TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR310TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR310TRPBF-BE3?
IRFR310TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR310TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR310TRPBF-BE3?
For technical support, including IRFR310TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR310TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR310TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR310TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR310TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR310TRPBF-BE3?
All IRFR310TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR310TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR310TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR310TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR310TRPBF-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
