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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR310TRR

Name: IRFR310TRR
Brand: Vishay Siliconix
SKU: IRFR310TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR310TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR310TRR.pdf

Description:: MOSFET N-CH 400V 1.7A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,170

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Product details

Overview

IRFR310TRR from Vishay Siliconix is a 400 V, 1.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.6 Ω R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and full repetitive avalanche rating - designed for high-voltage DC-DC converters, offline SMPS snubber circuits, and industrial motor control drivers.

For engineers reviewing the IRFR310TRR datasheet, IRFR310TRR pinout, IRFR310TRR application, or IRFR310TRR equivalent, key selection criteria include its 400 V drain-source breakdown voltage, 86 mJ single-pulse avalanche energy, 4.0 V/ns peak diode recovery dV/dt capability, and PCB-mount thermal resistance of 50 °C/W - all critical for ruggedized high-voltage switching reliability.

Technical Context

This third-generation power MOSFET employs planar V-groove technology to achieve optimized trade-offs between conduction loss and switching speed. Its 3.6 Ω on-resistance at 10 V gate drive supports efficient operation in low-duty-cycle, high-voltage switching topologies such as flyback and forward converters.

The device integrates a fast-recovery body diode with 240–540 ns reverse recovery time and 0.85–1.6 μC Q_rr, enabling reliable unclamped inductive switching up to 1.7 A repetitive avalanche current. Thermal design is enabled by a junction-to-case resistance of 5.0 °C/W and defined PCB-mount derating (2.5 W at 25 °C ambient).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 230 VAC offline applications with 100 % safety margin
R_DS(on) @ V_GS = 10 V	3.6 Ω - determines I²R conduction loss in continuous-current stages like PFC hold-up or DC-DC primary switches
Q_g	12 nC - defines gate drive power requirement and switching transition time in hard-switched topologies
E_AS	86 mJ - enables robustness against unclamped inductive turn-off events without external snubbers
dV/dt Rating	4.0 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transients in high-frequency converters
T_J Range	−55 to +150 °C - permits operation in sealed industrial enclosures or automotive under-hood environments
R_thJA (PCB mount)	50 °C/W - sets maximum continuous power dissipation at 2.5 W on 1" FR-4 board, guiding heatsink-less layout decisions

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction and mechanical anchoring. Standard 3-pin surface-mount footprint compatible with vapor-phase and infrared reflow.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIO or dedicated gate drivers
D (Drain)	High-voltage output terminal	Connected to drain pad (tab); carries full switched voltage and current - requires isolation clearance ≥2.5 mm for 400 V working voltage
S (Source)	Reference node / return path	Provides low-impedance return for load current and gate drive loop; ties to power ground plane to minimize switching noise coupling

Key Features

Feature	Design Value
Repetitive avalanche rated	1.7 A I_AR and 2.5 mJ E_AR - eliminates need for external clamping in inductive load commutation
Dynamic dV/dt rated	4.0 V/ns - prevents false triggering during rapid voltage transitions in high-frequency SMPS
Fast switching performance	7.9 ns t_d(on), 9.9 ns t_r, 21 ns t_d(off), 11 ns t_f - reduces switching losses in 100–500 kHz converters
Low Q_gd/Q_g ratio	6.5/12 = 54 % - improves Miller immunity and enables stable operation with moderate gate resistance
Body diode with low Q_rr	0.85–1.6 μC - minimizes reverse recovery loss and EMI in synchronous rectification or freewheeling paths

Applications

Industrial Motor Drives	Offline AC-DC Power Supplies
Use Scenario: Half-bridge gate driver stage for 24–48 V BLDC motor controllers in factory automation equipment. IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge configuration, handling 1.7 A continuous phase current at 20–100 kHz PWM frequency. Use Value: Avalanche rating absorbs inductive kickback during forced commutation; 3.6 Ω R_DS(on) limits conduction loss to <100 mW per switch at rated current.	Use Scenario: Primary-side switch in 15–30 W universal-input flyback converter for industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM), switching at 65 kHz with 400 V blocking requirement. Use Value: 400 V V_DS provides margin over 375 V DC link; 86 mJ E_AS tolerates leakage inductance spikes without snubber redesign.
DC-DC Converters	Lighting Ballasts
Use Scenario: High-voltage boost switch in 48 V input, 400 V output telecom DC-DC intermediate bus converter. IC Role / Device Role / Timing Role: Synchronous rectifier control FET in active clamp forward topology, switching at 250 kHz with 1.1 A RMS current. Use Value: 12 nC Q_g enables efficient gate driving with low-power isolated gate driver ICs; 50 °C/W R_thJA allows compact 2-layer PCB layout.	Use Scenario: Lamp ignition and regulation switch in electronic HID ballasts for street lighting and industrial high-bay fixtures. IC Role / Device Role / Timing Role: Series-pass switch controlling lamp current during warm-up and steady-state operation, enduring repeated 400 V transients. Use Value: Repetitive avalanche rating sustains 1.7 A I_AR during lamp arc instability; 150 °C max T_J supports sealed fixture thermal environments.

Industrial Motor Drives

Offline AC-DC Power Supplies

Use Scenario: Half-bridge gate driver stage for 24–48 V BLDC motor controllers in factory automation equipment.

IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge configuration, handling 1.7 A continuous phase current at 20–100 kHz PWM frequency.

Use Value: Avalanche rating absorbs inductive kickback during forced commutation; 3.6 Ω R_DS(on) limits conduction loss to <100 mW per switch at rated current.

Use Scenario: Primary-side switch in 15–30 W universal-input flyback converter for industrial sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM), switching at 65 kHz with 400 V blocking requirement.

Use Value: 400 V V_DS provides margin over 375 V DC link; 86 mJ E_AS tolerates leakage inductance spikes without snubber redesign.

DC-DC Converters

Lighting Ballasts

Use Scenario: High-voltage boost switch in 48 V input, 400 V output telecom DC-DC intermediate bus converter.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in active clamp forward topology, switching at 250 kHz with 1.1 A RMS current.

Use Value: 12 nC Q_g enables efficient gate driving with low-power isolated gate driver ICs; 50 °C/W R_thJA allows compact 2-layer PCB layout.

Use Scenario: Lamp ignition and regulation switch in electronic HID ballasts for street lighting and industrial high-bay fixtures.

IC Role / Device Role / Timing Role: Series-pass switch controlling lamp current during warm-up and steady-state operation, enduring repeated 400 V transients.

Use Value: Repetitive avalanche rating sustains 1.7 A I_AR during lamp arc instability; 150 °C max T_J supports sealed fixture thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V V_DS, 2.8 Ω R_DS(on), TO-220FP package - higher voltage rating but through-hole mounting	Preferred where 600 V headroom is required (e.g., 380 VAC systems) and PCB space allows leaded components	Select STP3NK60ZFP only when >400 V blocking is mandatory and surface-mount constraint is relaxed
IXTP2N50D2	500 V V_DS, 5.5 Ω R_DS(on), TO-220 package - lower cost but higher on-resistance and no avalanche rating	Suitable for non-critical, low-stress linear or low-frequency switching where avalanche immunity is not required	Choose IXTP2N50D2 only for cost-sensitive, low-reliability applications without inductive loads or voltage transients

Compared with STP3NK60ZFP and IXTP2N50D2, the IRFR310TRR delivers optimal balance of 400 V rating, surface-mount DPAK packaging, full avalanche ruggedness, and 3.6 Ω conduction loss - making it uniquely suited for compact, high-reliability industrial power stages where PCB area and transient robustness are jointly constrained.

Availability

IRFR310TRR is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, and DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFR310TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFR310TRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedized switching in offline power conversion, motor control, and lighting systems where avalanche capability and surface-mount reliability are essential.

FAQ

What is the maximum continuous drain current for IRFR310TRR at 100 °C case temperature?

The IRFR310TRR supports 1.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be verified against actual PCB layout and airflow conditions. The IRFR310TRR datasheet confirms this rating applies with proper thermal pad soldering and minimum recommended copper area per Application Note 826.

Does IRFR310TRR have a fully rated avalanche capability, and what does that mean in practice?

Yes, the IRFR310TRR is fully repetitive avalanche rated: 1.7 A I_AR and 2.5 mJ E_AR at T_J ≤ 150 °C. In practice, this means the IRFR310TRR can safely absorb inductive energy during unclamped turn-off events - such as relay coil de-energization or transformer leakage spikes - without failure, eliminating the need for external snubbers in many industrial designs.

What is the gate threshold voltage range for IRFR310TRR, and how does it affect drive circuit design?

The IRFR310TRR has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C. This wide range means drive circuits must ensure gate voltage exceeds 4.0 V to guarantee full enhancement across process and temperature extremes. For reliable operation, the IRFR310TRR should be driven with ≥10 V to achieve its specified 3.6 Ω R_DS(on) and avoid linear-mode heating.

Can IRFR310TRR be used in place of IRFR310PbF, and what is the key difference?

Yes, IRFR310TRR is the tape-and-reel version of the same die and package as IRFR310PbF, with identical electrical specifications and thermal performance. The key difference is packaging format: IRFR310TRR ships in 2,000-piece tape-and-reel for automated SMT placement, while IRFR310PbF is supplied in tube packaging. Both share Pb-free and halogen-free construction per Vishay's "-GE3" material categorization.

What is the typical reverse recovery time of the body diode in IRFR310TRR, and why does it matter?

The IRFR310TRR body diode exhibits a typical reverse recovery time (t_rr) of 240 ns at T_J = 25 °C, with a maximum of 540 ns. This parameter matters because faster t_rr reduces switching loss and EMI during freewheeling or synchronous rectification - especially critical in high-frequency flyback or LLC resonant converters where diode conduction occurs regularly.

IRFR310TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR310TRR FAQ

1.How can I place an order for IRFR310TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR310TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR310TRR reliable?

The price and inventory of IRFR310TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR310TRR is usually 5 days.

3.What payment methods are accepted for IRFR310TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR310TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR310TRR?

IRFR310TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR310TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR310TRR?

For technical support, including IRFR310TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR310TRR requirements.

6.How does Aetrix verify that IRFR310TRR is sourced from the original manufacturer or authorized distributors?

All IRFR310TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR310TRR meets industry standards.

7.What is the process for return or replacement of IRFR310TRR?

All IRFR310TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR310TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR310TRR part is unused and in its original packaging.

Return procedure for IRFR310TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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