Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR320PBF

Part No.:
IRFR320PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR320PBF.pdf
Description:
MOSFET N-CH 400V 3.1A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,725

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR320PBF from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating - designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and industrial motor control snubbers.

For engineers reviewing the IRFR320PBF datasheet, IRFR320PBF pinout, IRFR320PBF application, or IRFR320PBF equivalent, key selection criteria include its 400 V blocking capability, 1.8 Ω on-resistance at 10 V drive, 3.1 A continuous drain current at TC = 25 °C, avalanche energy rating of 160 mJ (single-pulse), and DPAK thermal performance with RthJC = 3.0 °C/W.

Technical Context

This device implements a third-generation trench-gated vertical DMOS structure optimized for ruggedness and fast switching. Its dynamic dV/dt rating of 4.0 V/ns and body diode reverse recovery time of 270–600 ns support reliable operation in inductive switching circuits without external snubbers.

The MOSFET integrates a monolithic body diode with 1.6 V forward voltage at 3.1 A and 1.4–3.0 μC reverse recovery charge, enabling use in freewheeling and synchronous rectification roles where controlled diode conduction is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - supports primary-side switching in offline flyback and half-bridge topologies up to 380 V DC bus.
RDS(on)1.8 Ω @ VGS = 10 V - enables low conduction loss in 3–5 W auxiliary supplies and low-duty-cycle snubber circuits.
ID (continuous)3.1 A @ TC = 25 °C - suitable for discrete high-side switches in industrial I/O modules and relay drivers.
Qg20 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
EAS160 mJ (single-pulse) - allows unclamped inductive switching in solenoid drivers and transformer reset circuits.
RthJC3.0 °C/W - enables 42 W power dissipation with minimal heatsinking when mounted on copper-clad PCBs.
VGS(th)2.0–4.0 V - ensures turn-on with standard 5 V or 12 V logic-level gate drive, no level-shifting needed.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline compliant with JEDEC MO-238. Mounting requires vapor-phase or infrared reflow per Vishay's recommended profile (peak 260 °C for 10 s).

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalReceives gate drive signal; 100 nA max leakage at ±20 V ensures low standby current in battery-backed systems.
D (Drain)High-side power outputConnected to exposed thermal pad; carries full load current and dissipates heat directly into PCB copper pour.
S (Source)Power return referenceProvides ground reference for gate drive; internal source inductance of 7.5 nH affects high-speed switching ringing.

Key Features

FeatureDesign Value
Repetitive avalanche ratedSupports 3.1 A repetitive avalanche current and 4.2 mJ energy - enables robust operation in inductive load switching without external clamps.
Dynamic dV/dt rating4.0 V/ns - prevents spurious turn-on during high dv/dt transients in motor drives and SMPS primary side.
Fast switchingTurn-on delay 10 ns, rise time 14 ns, turn-off delay 30 ns, fall time 13 ns - reduces switching losses in 100–500 kHz applications.
Surface-mount (DPAK)Compatible with automated pick-and-place and reflow soldering; thermal pad improves PCB heat spreading over through-hole alternatives.
Low Qgd/Qg ratio11/20 = 55% - enhances Miller immunity and enables stable hard-switching in high-side configurations.

Applications

AC-DC Auxiliary Power SupplyIndustrial Relay Driver

Use Scenario: Provides isolated 12 V bias supply for PWM controllers and optocouplers in offline SMPS.

IC Role / Device Role / Timing Role: High-side switch in flyback snubber or self-bias winding rectifier circuit.

Use Value: 400 V rating withstands reflected flyback spikes; 1.8 Ω RDS(on) minimizes dropout in low-current auxiliary rails.

Use Scenario: Drives 24 V DC industrial relays and solenoids in PLC I/O modules.

IC Role / Device Role / Timing Role: Discrete high-side load switch with integrated avalanche protection.

Use Value: 160 mJ single-pulse avalanche energy absorbs inductive kickback without external TVS diodes.

Motor Control SnubberHigh-Voltage DC Link Monitor Switch

Use Scenario: Clamps voltage spikes across brushed DC motor brushes during commutation.

IC Role / Device Role / Timing Role: Passive snubber switch absorbing stored inductive energy.

Use Value: Repetitive avalanche rating (3.1 A, 4.2 mJ) sustains repeated switching stress without degradation.

Use Scenario: Enables/disables high-impedance voltage divider networks for 400 V DC link sensing.

IC Role / Device Role / Timing Role: Precision high-voltage sample-and-hold switch in isolation amplifier front-end.

Use Value: 25 μA max IDSS at 400 V ensures <0.1% measurement error in 1 MΩ sense dividers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiHFR320-GE3Same die, identical RDS(on), Qg, and avalanche specs; Pb-free/halogen-free construction per JEDEC J-STD-609.No functional difference; used where RoHS-compliant assembly is mandatory.Select SiHFR320-GE3 for new designs requiring lead-free compliance; IRFR320PBF remains valid for legacy repair or non-RoHS environments.
IRFU320PbFSame silicon but IPAK (TO-251) through-hole package; RthJA = 50 °C/W (PCB mount) vs. 110 °C/W for DPAK; same 400 V/3.1 A rating.Better thermal reliability in high-ambient or low-airflow environments due to lower junction-to-ambient resistance.Choose IRFU320PbF when board space permits through-hole mounting and ambient temperature exceeds 70 °C.

Compared with IRFR320PBF, SiHFR320-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFU320PbF trades surface-mount convenience for superior thermal management in thermally constrained enclosures.

Availability

IRFR320PBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial relay drivers, and motor control snubbers requiring stable component supply across extended production lifecycles.

Supply support for IRFR320PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR320PBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for ruggedness in inductive switching applications including offline power conversion and industrial actuation.

FAQ

What is the maximum continuous drain current for IRFR320PBF at 100 °C case temperature?

The IRFR320PBF supports 2.0 A continuous drain current at TC = 100 °C, derating linearly from 3.1 A at 25 °C using a factor of 0.33 W/°C. This value is confirmed in the Absolute Maximum Ratings table and applies under steady-state PCB-mount conditions with adequate copper area.

Does IRFR320PBF have a specified body diode reverse recovery time?

Yes, the IRFR320PBF body diode reverse recovery time (trr) is specified as 270–600 ns at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This parameter is critical for snubberless inductive switching and impacts EMI generation in high-frequency applications.

Is IRFR320PBF pin-compatible with IRFU320PbF?

No, IRFR320PBF (DPAK/TO-252) and IRFU320PbF (IPAK/TO-251) share identical silicon and electrical specifications but differ in package outline, pin pitch, and thermal pad configuration. PCB layout and stencil design must be revised for substitution.

What is the gate-source threshold voltage range for IRFR320PBF?

The gate-source threshold voltage (VGS(th)) for IRFR320PBF is 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 5 V microcontroller outputs and compatibility with 12 V gate drivers without risk of partial enhancement.

Can IRFR320PBF be used in avalanche mode for energy absorption?

Yes, IRFR320PBF is explicitly rated for repetitive avalanche operation: 3.1 A repetitive avalanche current and 4.2 mJ repetitive avalanche energy. Single-pulse avalanche energy is 160 mJ. Operation must respect pulse width and duty cycle limits defined in Figure 11 to avoid junction overheating.

IRFR320PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR320PBF FAQ

1.How can I place an order for IRFR320PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR320PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR320PBF reliable?

The price and inventory of IRFR320PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320PBF is usually 5 days.

3.What payment methods are accepted for IRFR320PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR320PBF?

IRFR320PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR320PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR320PBF?

For technical support, including IRFR320PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320PBF requirements.

6.How does Aetrix verify that IRFR320PBF is sourced from the original manufacturer or authorized distributors?

All IRFR320PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320PBF meets industry standards.

7.What is the process for return or replacement of IRFR320PBF?

All IRFR320PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR320PBF part is unused and in its original packaging.

Return procedure for IRFR320PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR320PBF Tags

  • IRFR320PBF
  • IRFR320PBF PDF
  • IRFR320PBF Datasheet
  • IRFR320PBF Specifications
  • IRFR320PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR320PBF
  • Buy IRFR320PBF
  • IRFR320PBF Price
  • IRFR320PBF Distributor
  • IRFR320PBF Supplier
  • IRFR320PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER