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Vishay Siliconix IRFR320PBF-BE3
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- Part No.:
- IRFR320PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR320PBF-BE3.pdf
- Description:
- N-CHANNEL 400V
- Quantity:
- Payment:
- Shipping:
Inventory:5,138
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Product details
Overview
IRFR320PBF-BE3 from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are required.
For engineers reviewing the IRFR320PBF-BE3 datasheet, IRFR320PBF-BE3 pinout, IRFR320PBF-BE3 application, or IRFR320PBF-BE3 equivalent, this page delivers verified electrical parameters, thermal derating data, body diode recovery characteristics (trr = 270–600 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for high-reliability power stage design.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for unclamped inductive switching with 160 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche capability. Its dynamic dV/dt rating of 4.0 V/ns supports robust operation in noisy high-side switching environments.
The IRFR320PBF-BE3 uses planar V-groove technology enabling stable threshold voltage (2.0–4.0 V), low gate leakage (±100 nA), and tight RDS(on) distribution. It integrates an intrinsic body diode with 1.6 V forward drop at 3.1 A and 270–600 ns reverse recovery time-critical for synchronous rectification and flyback snubberless topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Supports input rails up to 320 V DC in offline SMPS and industrial HV bus applications. |
| RDS(on) @ VGS = 10 V | 1.8 Ω - Enables <3.5 W conduction loss at 3.1 A continuous drain current in thermally constrained layouts. |
| Qg | 20 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers at ≤500 kHz switching. |
| ID (TC = 25 °C) | 3.1 A - Maximum continuous current with heatsink; derates linearly to 2.0 A at 100 °C case temperature. |
| EAS | 160 mJ - Withstands single unclamped inductive energy events without failure-key for relay/snubberless solenoid driving. |
| trr | 270–600 ns - Body diode recovery time directly impacts switching losses and EMI in hard-switched topologies. |
| RthJA (PCB mount) | 50 °C/W - Achievable with 1" × 1" FR-4 copper area; defines thermal headroom for 2.5 W ambient-limited operation. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction. Standard 3-pin surface-mount configuration: Gate (G), Drain (D), Source (S). Mounting requires vapor-phase or infrared reflow per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate terminal | Controls channel conduction; requires ≥10 V drive for full enhancement; gate-source leakage ≤ ±100 nA ensures low standby power. |
| D | Drain terminal | Main high-voltage power path; electrically connected to exposed thermal pad-must be soldered to PCB copper pour for thermal management. |
| S | Source terminal | Reference node for gate drive and current sensing; internal source inductance (LS = 7.5 nH) affects switching waveform ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 3.1 A repetitive avalanche current and 4.2 mJ energy-eliminates need for external clamping in inductive load switching. |
| Dynamic dV/dt immunity | Rated for 4.0 V/ns-prevents false turn-on during high dv/dt transients in half-bridge or high-side configurations. |
| Fast switching performance | Turn-on delay 10 ns, rise time 14 ns, turn-off delay 30 ns, fall time 13 ns-supports >300 kHz operation with minimal overlap loss. |
| Low Qgd/Qg ratio | Qgd = 11 nC / Qg = 20 nC = 55%-indicates strong Miller immunity and reduced risk of shoot-through in bridge circuits. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's "Green" material policy-suitable for consumer and industrial environmental compliance. |
Applications
| Industrial Motor Control | Offline AC-DC Adapters |
|---|---|
Use Scenario: Driving 24–48 V brushed DC motors in PLC I/O modules and valve actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; body diode handles freewheeling current during PWM off-time. Use Value: Repetitive avalanche rating absorbs inductive kickback without snubbers; 1.8 Ω RDS(on) limits I²R heating at 3.1 A continuous. | Use Scenario: Primary-side switching in 30–60 W universal-input (90–264 VAC) flyback converters for medical and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz; withstands reflected output voltage plus leakage spike. Use Value: 400 V VDS margin accommodates 320 V DC link + 80 V spike; 160 mJ EAS tolerates worst-case unclamped transients. |
| DC-DC Boost Converters | Lighting Ballast Drivers |
Use Scenario: Step-up stage in 12 V to 48 V telecom intermediate bus converters delivering up to 5 A output. IC Role / Device Role / Timing Role: Synchronous rectifier or main boost switch; operates in continuous conduction mode with 200–500 kHz switching. Use Value: Low Qg (20 nC) and fast switching reduce driver losses; 50 °C/W RthJA enables compact layout with 2.5 W PCB-limited dissipation. | Use Scenario: Electronic ballast for HID lamps (e.g., metal halide, high-pressure sodium) requiring 300–400 V blocking capability. IC Role / Device Role / Timing Role: Resonant half-bridge switch managing lamp ignition and steady-state regulation via frequency modulation. Use Value: 4.0 V/ns dV/dt rating prevents spurious turn-on during resonant voltage reversal; trr = 270–600 ns minimizes diode recovery loss in ZVS transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR3710PBF | Higher VDS (100 V), lower RDS(on) (0.055 Ω), higher Qg (86 nC)-not rated for 400 V operation. | Only suitable for ≤100 V DC bus systems; cannot replace IRFR320PBF-BE3 in 320 V applications. | Select only when system VDS stress remains below 80 V and lower conduction loss justifies higher gate drive demand. |
| STP4NK60ZFP | Same VDS (600 V), higher RDS(on) (3.5 Ω), lower Qg (16 nC), TO-220FP package-not surface-mount. | Requires through-hole assembly and larger heatsink; lacks DPAK thermal interface and PCB-mount power rating. | Choose only if board space allows through-hole mounting and 600 V margin is mandatory over 400 V. |
Compared with IRFR320PBF-BE3, IRFR3710PBF trades voltage rating for lower RDS(on) and higher gate charge-making it unsuitable for 320 V systems-while STP4NK60ZFP offers higher voltage headroom but sacrifices surface-mount compatibility and thermal efficiency in PCB-constrained designs.
Availability
IRFR320PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC adapters, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for IRFR320PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR320PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for rugged unclamped inductive switching, fast transition times, and stable parametric performance across temperature in space-constrained surface-mount power stages.
FAQ
What is the maximum continuous drain current for IRFR320PBF-BE3 at 100 °C case temperature?
The IRFR320PBF-BE3 supports 2.0 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This value assumes proper PCB copper area and thermal pad soldering per Vishay's DPAK mounting guidelines.
Does IRFR320PBF-BE3 have avalanche capability, and how is it specified?
Yes, IRFR320PBF-BE3 is repetitively avalanche rated: it supports 3.1 A repetitive avalanche current and 4.2 mJ repetitive avalanche energy under defined test conditions (VDD = 50 V, L = 29 mH, Rg = 25 Ω). Single-pulse avalanche energy is 160 mJ, validated per Figure 12 in the official datasheet.
What is the gate threshold voltage range for IRFR320PBF-BE3, and why does it matter?
The gate-source threshold voltage (VGS(th)) for IRFR320PBF-BE3 is 2.0–4.0 V at ID = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while preventing accidental activation from noise-critical for high-voltage systems where gate drive integrity is essential.
Can IRFR320PBF-BE3 be used in synchronous rectification topologies?
IRFR320PBF-BE3 can serve as a synchronous rectifier in low-frequency (<100 kHz) flyback or forward converters, but its body diode trr (270–600 ns) and VSD (1.6 V) limit efficiency gains versus dedicated low-VF, ultrafast diodes. It is better suited as a primary switch where its 400 V rating and avalanche ruggedness provide system-level robustness.
What is the thermal resistance from junction to ambient for IRFR320PBF-BE3 in standard PCB mount?
When mounted on a 1" × 1" FR-4 PCB, IRFR320PBF-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value enables 2.5 W power dissipation at TA = 25 °C and defines minimum copper area requirements for thermal management in surface-mount applications.
IRFR320PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR320PBF-BE3 FAQ
1.How can I place an order for IRFR320PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR320PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR320PBF-BE3 reliable?
The price and inventory of IRFR320PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR320PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR320PBF-BE3?
IRFR320PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR320PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR320PBF-BE3?
For technical support, including IRFR320PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320PBF-BE3 requirements.
6.How does Aetrix verify that IRFR320PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR320PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR320PBF-BE3?
All IRFR320PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR320PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR320PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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