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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR320TRLPBF

Name: IRFR320TRLPBF
Brand: Vishay Siliconix
SKU: IRFR320TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR320TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR320TRLPBF.pdf

Description:: MOSFET N-CH 400V 3.1A DPAK

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Product details

Overview

IRFR320TRLPBF from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS snubber circuits, and industrial motor control interface stages.

For engineers reviewing the IRFR320TRLPBF datasheet, IRFR320TRLPBF pinout, IRFR320TRLPBF application, or IRFR320TRLPBF equivalent, key selection criteria include its 400 V V_DS, 1.8 Ω on-resistance at 10 V drive, 20 nC Q_g, 160 mJ single-pulse avalanche energy, and DPAK thermal performance with 3.0 °C/W R_thJC.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for ruggedness and fast switching. It supports unclamped inductive switching with verified 160 mJ single-pulse avalanche energy and 3.1 A repetitive avalanche current under defined conditions (V_DD = 50 V, L = 29 mH, R_g = 25 Ω).

The IRFR320TRLPBF integrates a low-leakage body diode (V_SD = 1.6 V at 3.1 A, t_rr = 270–600 ns), exhibits dynamic dV/dt immunity up to 4.0 V/ns, and maintains stable R_DS(on) across temperature with a +0.51 V/°C V_DS temperature coefficient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Withstands up to 400 V drain-source blocking voltage, suitable for 380 V AC rectified rails and flyback primary switches.
R_DS(on)	1.8 Ω @ V_GS = 10 V - Low conduction loss at standard gate drive; enables <1.8 W I²R loss at 1.9 A continuous current.
Q_g	20 nC - Total gate charge determines drive strength requirement; compatible with standard 1-A peak gate drivers for ≤500 kHz switching.
E_AS	160 mJ - Single-pulse avalanche energy rating validates robustness during transient overvoltage events without external clamping.
R_thJC	3.0 °C/W - Junction-to-case thermal resistance enables high-power dissipation when mounted on heatsinked PCB copper areas.
I_D (T_C = 25 °C)	3.1 A - Continuous drain current rating at case temperature 25 °C; derates linearly to 2.0 A at 100 °C case.
dV/dt	4.0 V/ns - Peak diode recovery dV/dt rating ensures reliable commutation in hard-switched inductive loads without spurious turn-on.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) aligned to JEDEC standard outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with microcontroller GPIO or dedicated gate drivers.
D (Drain)	High-side power output	Connected to high-voltage rail; electrically and thermally tied to exposed backside metal pad-must be soldered to large copper pour.
S (Source)	Power return / reference node	Common return path for load current and gate drive loop; critical for minimizing switching noise and ensuring stable gate control.

Key Features

Feature	Design Value
Repetitive avalanche rated	Validated for 3.1 A I_AR and 4.2 mJ E_AR under pulsed inductive conditions-enables reliable operation in non-clamped flyback and relay driving.
Dynamic dV/dt immunity	4.0 V/ns rated-prevents false turn-on during fast voltage transients across drain-source in high-di/dt applications.
Low Q_gd/Q_g ratio	11 nC / 20 nC = 55% - Reduces Miller effect, improving switching controllability and reducing risk of shoot-through in half-bridge configurations.
Fast body diode recovery	t_rr = 270–600 ns, Q_rr = 1.4–3.0 μC - Minimizes reverse recovery losses in synchronous rectification and freewheeling paths.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912-suitable for consumer, industrial, and automotive-qualified designs.

Applications

AC-DC Adapter Primary Switch	Industrial Relay Driver
Use Scenario: High-voltage switch in 36–48 V input offline flyback converter powering IoT gateway power supplies. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; operates at 65–100 kHz with zero-voltage switching assist. Use Value: 400 V V_DS safely handles reflected output voltage plus leakage spike; 160 mJ E_AS absorbs unclamped inductive energy during startup or overload.	Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoid valves in PLC I/O modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element driving inductive load with fast turn-off to prevent contact arcing. Use Value: Repetitive avalanche rating sustains 3.1 A I_AR during coil de-energization; 4.0 V/ns dV/dt immunity prevents false triggering from inductive kickback.
DC-DC Boost Converter Stage	Motor Control Interface
Use Scenario: Step-up stage in battery-powered portable medical equipment converting 12 V nominal to 36 V for LED backlight driver. IC Role / Device Role / Timing Role: High-side boost switch operating at 250 kHz with 50% duty cycle; requires low Q_g for efficient gate drive. Use Value: 20 nC Q_g enables low-loss switching with minimal driver power; 1.8 Ω R_DS(on) limits conduction loss to <1.1 W at 2.5 A peak.	Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor H-bridge for warehouse automation conveyors. IC Role / Device Role / Timing Role: Upper-leg power switch handling bidirectional current; body diode conducts freewheeling current during PWM off-time. Use Value: Fast 270–600 ns t_rr and low 1.6 V V_SD reduce freewheeling losses; DPAK package allows direct heatsinking to chassis ground plane.

AC-DC Adapter Primary Switch

Industrial Relay Driver

Use Scenario: High-voltage switch in 36–48 V input offline flyback converter powering IoT gateway power supplies.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; operates at 65–100 kHz with zero-voltage switching assist.

Use Value: 400 V V_DS safely handles reflected output voltage plus leakage spike; 160 mJ E_AS absorbs unclamped inductive energy during startup or overload.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoid valves in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element driving inductive load with fast turn-off to prevent contact arcing.

Use Value: Repetitive avalanche rating sustains 3.1 A I_AR during coil de-energization; 4.0 V/ns dV/dt immunity prevents false triggering from inductive kickback.

DC-DC Boost Converter Stage

Motor Control Interface

Use Scenario: Step-up stage in battery-powered portable medical equipment converting 12 V nominal to 36 V for LED backlight driver.

IC Role / Device Role / Timing Role: High-side boost switch operating at 250 kHz with 50% duty cycle; requires low Q_g for efficient gate drive.

Use Value: 20 nC Q_g enables low-loss switching with minimal driver power; 1.8 Ω R_DS(on) limits conduction loss to <1.1 W at 2.5 A peak.

Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor H-bridge for warehouse automation conveyors.

IC Role / Device Role / Timing Role: Upper-leg power switch handling bidirectional current; body diode conducts freewheeling current during PWM off-time.

Use Value: Fast 270–600 ns t_rr and low 1.6 V V_SD reduce freewheeling losses; DPAK package allows direct heatsinking to chassis ground plane.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V V_DS, 2.2 Ω R_DS(on), 16 nC Q_g, TO-220FP package	Higher voltage rating but higher on-resistance and through-hole mounting	Choose for 600 V systems requiring higher margin; not drop-in due to package and pinout mismatch.
SiHFU320-GE3	Same die, IPAK (TO-251) through-hole package, identical electrical specs	Requires PCB through-hole mounting and wave soldering instead of reflow	Choose when legacy through-hole assembly is mandated; same performance, different mechanical integration.

Compared with IRFR320TRLPBF, STP3NK60ZFP offers higher voltage headroom but sacrifices conduction efficiency and surface-mount compatibility, while SiHFU320-GE3 delivers identical electrical behavior in a through-hole form factor-making it a direct functional alternative where board assembly process dictates leaded packaging.

Availability

IRFR320TRLPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial relay drivers, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFR320TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR320TRLPBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for demanding industrial and offline power conversion applications where avalanche capability, fast switching, and thermal robustness are essential.

FAQ

What is the maximum continuous drain current for IRFR320TRLPBF at 100 °C case temperature?

The IRFR320TRLPBF supports 2.0 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; design margins should account for PCB copper area and ambient airflow. The IRFR320TRLPBF must be mounted on ≥1" square FR-4 PCB for specified 2.5 W power dissipation at T_A = 25 °C.

Does IRFR320TRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFR320TRLPBF integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 3.1 A continuous source-drain current, 1.6 V forward voltage at 3.1 A and 25 °C, 270–600 ns reverse recovery time, and 1.4–3.0 μC reverse recovery charge. These values are measured under standardized conditions (T_J = 25 °C, I_F = 3.3 A, dI/dt = 100 A/μs) and directly impact freewheeling efficiency in inductive switching applications using the IRFR320TRLPBF.

Is IRFR320TRLPBF suitable for logic-level gate drive?

No, the IRFR320TRLPBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 1.8 Ω R_DS(on). Driving it with 3.3 V or 5 V logic outputs results in significantly higher on-resistance and conduction loss. For logic-level operation, consider Vishay's SiHL880 or similar devices-not the IRFR320TRLPBF.

What is the thermal resistance from junction to ambient for IRFR320TRLPBF in typical surface-mount configuration?

In standard surface-mount configuration on a 1" square FR-4 PCB, the IRFR320TRLPBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W. This value assumes no external heatsink and relies on PCB copper area for heat spreading. When mounted on a heatsinked DPAK footprint, R_thJA improves significantly-but the datasheet specifies 110 °C/W for still-air ambient without PCB copper, underscoring the importance of layout for thermal management of the IRFR320TRLPBF.

Can IRFR320TRLPBF replace IRFR320PbF-BE3 in an existing design?

Yes, IRFR320TRLPBF is functionally and mechanically identical to IRFR320PbF-BE3, differing only in tape-and-reel packaging (TRLPbF vs. PbF-BE3). Both share identical DPAK (TO-252) package, electrical specifications, and RoHS/halogen-free compliance. No layout, schematic, or thermal changes are required when substituting IRFR320TRLPBF for IRFR320PbF-BE3-the IRFR320TRLPBF is a direct packaging variant intended for automated pick-and-place assembly.

IRFR320TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR320TRLPBF FAQ

1.How can I place an order for IRFR320TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR320TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR320TRLPBF reliable?

The price and inventory of IRFR320TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR320TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR320TRLPBF?

IRFR320TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR320TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR320TRLPBF?

For technical support, including IRFR320TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320TRLPBF requirements.

6.How does Aetrix verify that IRFR320TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR320TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR320TRLPBF?

All IRFR320TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR320TRLPBF part is unused and in its original packaging.

Return procedure for IRFR320TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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