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Vishay Siliconix IRFR320TRPBF-BE3
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- Part No.:
- IRFR320TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR320TRPBF-BE3.pdf
- Description:
- N-CHANNEL 400V
- Quantity:
- Payment:
- Shipping:
Inventory:1,918
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Product details
Overview
IRFR320TRPBF-BE3 from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and offline switch-mode power supplies.
For engineers reviewing the IRFR320TRPBF-BE3 datasheet, IRFR320TRPBF-BE3 pinout, IRFR320TRPBF-BE3 application, or IRFR320TRPBF-BE3 equivalent, key selection criteria include its 400 V blocking capability, 1.8 Ω on-resistance at 10 V drive, 3.0 °C/W junction-to-case thermal resistance, and dV/dt ruggedness up to 4.0 V/ns-critical for reliable operation in flyback and snubberless topologies.
Technical Context
This third-generation TrenchFET® MOSFET uses planar silicon technology optimized for high-voltage switching with low conduction loss and robust unclamped inductive switching (UIS) performance. Its 160 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche energy support reliable operation under transient overloads without external clamping.
The device integrates a fast-recovery body diode with 270–600 ns reverse recovery time and 1.4–3.0 μC Qrr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate charge profile (Qgs = 3.3 nC, Qgd = 11 nC) supports clean turn-on/turn-off control with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Supports primary-side switching in 380 V DC bus and universal-input offline SMPS |
| RDS(on) | 1.8 Ω @ VGS = 10 V - Enables <1.8 W conduction loss at 1.9 A continuous drain current |
| ID (TC = 25 °C) | 3.1 A - Sustains full-load current in compact surface-mount power stages without forced cooling |
| Qg | 20 nC - Matches standard gate drivers (e.g., UCC27531) with ≤20 ns propagation delay |
| EAS | 160 mJ - Absorbs unclamped inductive energy in flyback transformer reset without failure |
| RthJC | 3.0 °C/W - Allows direct heatsinking via PCB copper pour or small external heatsink for thermal management |
| dV/dt Rating | 4.0 V/ns - Resists false triggering during high-slew-rate voltage transients in noisy environments |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering per JEDEC standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive; requires ≤20 nC charge for full enhancement; sensitive to ESD (±20 V max) |
| D (Drain) | High-voltage output terminal | Connected to exposed metal tab; carries full switched current and must be routed over thermal pad for heat dissipation |
| S (Source) | Power return reference | Serves as local ground reference for gate driver; source inductance (LS = 7.5 nH) impacts switching ringing and layout sensitivity |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 3.1 A IAR and 4.2 mJ EAR - eliminates need for external snubbers in inductive load switching |
| Dynamic dV/dt rating | 4.0 V/ns - prevents spurious turn-on during high-frequency voltage transitions in high-noise power circuits |
| Fast switching | td(on) = 10 ns, tr = 14 ns, td(off) = 30 ns, tf = 13 ns - enables >500 kHz operation with low switching loss |
| Low Qgd/Qg ratio | 11/20 = 55% - improves Miller immunity and reduces gate drive power requirements |
| Body diode soft recovery | trr = 270–600 ns, Qrr = 1.4–3.0 μC - minimizes voltage overshoot and EMI during freewheeling in discontinuous conduction mode |
Applications
| Offline Flyback Converter | AC-DC Auxiliary Supply |
|---|---|
|
Use Scenario: Primary-side switch in 12–24 W universal-input (85–265 VAC) flyback converter powering control circuitry. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with zero-voltage switching assistance. Use Value: 400 V VDS margin accommodates reflected output voltage + leakage spike; 1.8 Ω RDS(on) keeps conduction loss below 0.5 W at 1.5 A peak. |
Use Scenario: Standby power supply delivering 5 V/0.5 A to microcontroller and sensors in smart appliances. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant topology with burst-mode operation. Use Value: Repetitive avalanche rating handles no-load transformer saturation events; 20 nC Qg enables low-power gate driving during standby cycles. |
| DC-DC Boost Converter | Industrial Motor Control Driver |
|
Use Scenario: Boost stage in 24 V input industrial power module stepping up to 48 V for PoE++ or battery charging. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) with 200 kHz switching frequency. Use Value: 3.1 A ID rating supports 2.5 A output current with 20% margin; 3.0 °C/W RthJC allows thermal design with 2 oz copper pour only. |
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor gate driver for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Power switch controlling phase voltage in six-step commutation with 10–20 kHz PWM. Use Value: Body diode reverse recovery characteristics reduce shoot-through risk during dead-time; dV/dt ruggedness prevents false turn-on during bus transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK60ZFP | 600 V VDS, 2.2 Ω RDS(on), 16 nC Qg, TO-220FP package | Higher voltage rating but larger through-hole package; lacks DPAK surface-mount compatibility | Select when 600 V headroom is required and board space permits leaded mounting |
| IXTP3N50D2 | 500 V VDS, 2.4 Ω RDS(on), 14 nC Qg, TO-220 package | Higher RDS(on) and different thermal path; not surface-mount; lower avalanche energy (120 mJ EAS) | Choose for legacy through-hole designs where 500 V rating suffices and DPAK footprint is unavailable |
Compared with STP3NK60ZFP and IXTP3N50D2, IRFR320TRPBF-BE3 offers superior surface-mount integration, lower on-resistance at 400 V, and higher avalanche robustness-making it optimal for space-constrained, high-reliability 400 V-class power stages where thermal performance and layout simplicity are critical.
Availability
IRFR320TRPBF-BE3 is available at Aetrix Electronics and suitable for offline switch-mode power supplies, industrial DC-DC converters, and motor control drivers requiring stable component supply across production lifecycles.
Supply support for IRFR320TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFR320TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage switching efficiency and avalanche survivability in industrial and consumer power conversion systems.
FAQ
What is the maximum continuous drain current for IRFR320TRPBF-BE3 at 100 °C case temperature?
The IRFR320TRPBF-BE3 supports 2.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation, and designers must ensure adequate PCB copper area or heatsinking to maintain safe junction temperatures below 150 °C. The IRFR320TRPBF-BE3 datasheet confirms this value with linear derating factor of 0.33 W/°C above 25 °C.
Does IRFR320TRPBF-BE3 require a gate resistor for stable switching?
Yes, IRFR320TRPBF-BE3 benefits from an external gate resistor (typically 10–25 Ω) to control dI/dt and suppress ringing caused by source inductance (LS = 7.5 nH) and parasitic capacitances. Test conditions in the datasheet use Rg = 25 Ω for UIS and switching characterization. Omitting the resistor risks oscillation, excessive EMI, and potential gate oxide stress during fast transitions. The IRFR320TRPBF-BE3 gate threshold voltage range (2.0–4.0 V) also makes controlled turn-on essential to avoid partial enhancement.
Can IRFR320TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, IRFR320TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 3.1 A and EAR = 4.2 mJ, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (TJ ≤ 150 °C). This capability is validated per Figure 11 in the datasheet and enables robust operation in inductive load switching without external clamping components. The IRFR320TRPBF-BE3 avalanche performance is integral to its design and does not require special biasing beyond standard gate drive.
What is the thermal resistance from junction to ambient for IRFR320TRPBF-BE3 on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR320TRPBF-BE3 exhibits RthJA = 50 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes typical surface-mount layout with minimum recommended copper pads per Application Note 826. For enhanced cooling, designers can increase copper area or add thermal vias under the drain pad to approach the 110 °C/W worst-case rating. The IRFR320TRPBF-BE3 junction-to-case resistance remains fixed at 3.0 °C/W regardless of PCB layout.
Is IRFR320TRPBF-BE3 compatible with lead-free reflow soldering processes?
Yes, IRFR320TRPBF-BE3 is qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, as specified in the Absolute Maximum Ratings table. The "-BE3" suffix denotes Vishay's lead-free and halogen-free compliance per JEDEC J-STD-020. The DPAK package construction and internal die attach are fully compatible with standard Pb-free thermal profiles, including ramp rates and time-above-liquidus specifications. The IRFR320TRPBF-BE3 packaging documentation confirms full process qualification for vapor-phase and infrared reflow.
IRFR320TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR320TRPBF-BE3 FAQ
1.How can I place an order for IRFR320TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR320TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR320TRPBF-BE3 reliable?
The price and inventory of IRFR320TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR320TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR320TRPBF-BE3?
IRFR320TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR320TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR320TRPBF-BE3?
For technical support, including IRFR320TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR320TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR320TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR320TRPBF-BE3?
All IRFR320TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR320TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR320TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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