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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR320TRRPBF

Name: IRFR320TRRPBF
Brand: Vishay Siliconix
SKU: IRFR320TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR320TRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR320TRRPBF.pdf

Description:: MOSFET N-CH 400V 3.1A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR320TRRPBF from Vishay Siliconix is a 400 V, 3.1 A N-channel power MOSFET in DPAK (TO-252) surface-mount package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating up to 3.1 A - designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and industrial motor control snubbers.

For engineers reviewing the IRFR320TRRPBF datasheet, IRFR320TRRPBF pinout, IRFR320TRRPBF application, or IRFR320TRRPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (t_rr = 270–600 ns), and direct-mount PCB thermal resistance (R_thJA = 50 °C/W), enabling accurate switching loss estimation and layout validation.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for rugged unclamped inductive switching with 160 mJ single-pulse avalanche energy and 4.0 V/ns peak diode recovery dV/dt rating. Its low Q_gd/Q_g ratio (11/20 nC) supports stable high-speed turn-off under high dV/dt conditions.

The IRFR320TRRPBF integrates a fast-recovery body diode (Q_rr = 1.4–3.0 μC, t_rr = 270–600 ns) and exhibits linear thermal derating of 0.33 W/°C above 25 °C case temperature - critical for thermally constrained SMT designs where junction-to-ambient conduction dominates.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in offline flyback and forward converters up to 375 V DC bus.
R_DS(on)	1.8 Ω @ V_GS = 10 V - determines conduction loss in continuous current paths; enables <3.5 W I²R loss at 3.1 A.
Q_g	20 nC - defines gate drive energy requirement; dictates minimum driver peak current for 20 ns rise time.
E_AS	160 mJ - quantifies unclamped inductive energy handling without failure; validates snubberless operation in relay drivers.
t_rr	270–600 ns - sets minimum dead-time in half-bridge topologies to avoid shoot-through during body diode commutation.
R_thJA (PCB mount)	50 °C/W - measured on 1" FR-4 PCB; enables 2.5 W max power dissipation at T_A = 25 °C before exceeding 150 °C T_J.
I_D (T_C = 100 °C)	2.0 A - thermal-limited continuous current when mounted on heatsink; defines safe operating area at elevated ambient.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Standard JEDEC outline per Document 71197; recommended minimum copper pad per Application Note 826: 6.18 mm × 5.69 mm (0.243" × 0.224") for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard microcontroller outputs.
D (Drain)	High-voltage power terminal	Connected to exposed thermal pad; must be routed to large copper pour for heat dissipation and EMI shielding.
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; low-inductance source loop critical for dV/dt immunity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 3.1 A repetitive avalanche current (I_AR) - eliminates need for external clamping in inductive load switching.
Dynamic dV/dt rated	4.0 V/ns peak diode recovery dV/dt - prevents false turn-on during fast voltage transients in high-noise industrial environments.
Fast switching	Turn-on delay 10 ns, rise time 14 ns - enables >500 kHz operation in resonant converters with minimal overlap loss.
Surface-mount (DPAK)	Compatible with vapor-phase and infrared reflow; thermal pad enables 2.5 W dissipation on standard FR-4 PCB without heatsink.
Low Q_gd/Q_g ratio	55% (11/20 nC) - improves Miller immunity and reduces risk of spurious turn-on during high dv/dt transitions.

Applications

AC-DC Auxiliary Power Supply	Industrial Relay Driver
Use Scenario: Provides isolated bias supply for PWM controllers and gate drivers in offline SMPS using flyback topology. IC Role / Device Role / Timing Role: Primary-side switch regulating 12–24 V output from 375 V DC bus. Use Value: 400 V V_DS margin accommodates 100 VAC line surges; 160 mJ E_AS handles transformer leakage energy without snubber.	Use Scenario: Drives 24 VDC industrial relays and solenoids in PLC output modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch controlling inductive loads with fast turn-off. Use Value: Repetitive avalanche rating absorbs relay coil energy (E = ½L·I²); 4.0 V/ns dV/dt rating prevents false triggering from contact bounce noise.
DC-DC Boost Converter (HV Output)	Motor Control Snubber Circuit
Use Scenario: Boosts 24 V battery input to 300–400 V for sensor excitation or HV bias rails in test equipment. IC Role / Device Role / Timing Role: High-side switch in non-isolated boost stage operating at 100–300 kHz. Use Value: 1.8 Ω R_DS(on) limits conduction loss to <1.8 W at 3.1 A; 20 nC Q_g enables efficient gate drive with low-power IC drivers.	Use Scenario: Clamps voltage spikes across brushed DC motor brushes during commutation in factory automation drives. IC Role / Device Role / Timing Role: Active snubber switch absorbing inductive kickback energy. Use Value: 160 mJ single-pulse E_AS exceeds typical brush-commutation spike energy; DPAK thermal pad dissipates transient heat without thermal runaway.

AC-DC Auxiliary Power Supply

Industrial Relay Driver

Use Scenario: Provides isolated bias supply for PWM controllers and gate drivers in offline SMPS using flyback topology.

IC Role / Device Role / Timing Role: Primary-side switch regulating 12–24 V output from 375 V DC bus.

Use Value: 400 V V_DS margin accommodates 100 VAC line surges; 160 mJ E_AS handles transformer leakage energy without snubber.

Use Scenario: Drives 24 VDC industrial relays and solenoids in PLC output modules.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch controlling inductive loads with fast turn-off.

Use Value: Repetitive avalanche rating absorbs relay coil energy (E = ½L·I²); 4.0 V/ns dV/dt rating prevents false triggering from contact bounce noise.

DC-DC Boost Converter (HV Output)

Motor Control Snubber Circuit

Use Scenario: Boosts 24 V battery input to 300–400 V for sensor excitation or HV bias rails in test equipment.

IC Role / Device Role / Timing Role: High-side switch in non-isolated boost stage operating at 100–300 kHz.

Use Value: 1.8 Ω R_DS(on) limits conduction loss to <1.8 W at 3.1 A; 20 nC Q_g enables efficient gate drive with low-power IC drivers.

Use Scenario: Clamps voltage spikes across brushed DC motor brushes during commutation in factory automation drives.

IC Role / Device Role / Timing Role: Active snubber switch absorbing inductive kickback energy.

Use Value: 160 mJ single-pulse E_AS exceeds typical brush-commutation spike energy; DPAK thermal pad dissipates transient heat without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR3710TRPBF	Lower R_DS(on) (0.055 Ω), higher Q_g (86 nC), same 100 V V_DS - not voltage-compatible.	Designed for low-voltage, high-current applications (e.g., 12 V motor drives); unsuitable for 400 V systems.	Select only if system V_DS ≤ 100 V and lower conduction loss is prioritized over switching speed.
STP4NK60ZFP	Same 600 V rating, higher R_DS(on) (3.5 Ω), lower Q_g (14 nC), TO-220FP package - different thermal path and mounting.	Through-hole alternative with higher thermal resistance; requires heatsink for >1 W dissipation.	Choose when through-hole assembly is mandated or when lower gate charge outweighs surface-mount advantages.

Compared with IRFR320TRRPBF, IRFR3710TRPBF offers superior conduction efficiency but fails at 400 V blocking; STP4NK60ZFP matches voltage rating but trades higher R_DS(on) for lower gate drive demand and through-hole reliability - making IRFR320TRRPBF the optimal balance of voltage capability, SMT integration, and ruggedness for 400 V industrial switching.

Availability

IRFR320TRRPBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial relay drivers, and motor control snubber circuits requiring stable component supply across extended production lifecycles.

Supply support for IRFR320TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR320TRRPBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for rugged unclamped inductive switching in space-constrained surface-mount applications where avalanche energy handling and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRFR320TRRPBF at 100 °C case temperature?

The IRFR320TRRPBF supports 2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 3.1 A at 25 °C using the 0.33 W/°C factor - essential for thermal design validation in enclosed industrial enclosures where case temperature exceeds 70 °C.

Does IRFR320TRRPBF have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFR320TRRPBF integrates a monolithic body diode with t_rr = 270–600 ns and Q_rr = 1.4–3.0 μC at T_J = 25 °C. These values are measured under standardized conditions (I_F = 3.3 A, dI/dt = 100 A/μs) and directly impact dead-time selection in synchronous rectification and half-bridge topologies to prevent shoot-through.

What is the gate threshold voltage range for IRFR320TRRPBF, and how does it affect drive compatibility?

The IRFR320TRRPBF has a gate-source threshold voltage (V_GS(th)) of 2.0–4.0 V at I_D = 250 μA. This range confirms compatibility with standard 5 V and 3.3 V logic-level microcontrollers, but full enhancement requires ≥10 V gate drive to achieve the specified 1.8 Ω R_DS(on); insufficient gate voltage results in elevated conduction losses.

Can IRFR320TRRPBF be used in avalanche mode, and what is its repetitive avalanche current rating?

Yes, the IRFR320TRRPBF is explicitly rated for repetitive avalanche operation with I_AR = 3.1 A and E_AR = 4.2 mJ per pulse. This capability allows safe operation in inductive switching applications without external clamping components, provided pulse width and duty cycle remain within limits defined by junction temperature constraints.

What is the thermal resistance from junction to ambient for IRFR320TRRPBF when mounted on a standard PCB?

When mounted on a 1" square FR-4 PCB, the IRFR320TRRPBF exhibits R_thJA = 50 °C/W. This value enables calculation of maximum allowable power dissipation (2.5 W at T_A = 25 °C) and junction temperature rise - critical for ensuring long-term reliability in fanless industrial controls where ambient temperatures reach 70 °C.

IRFR320TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR320TRRPBF FAQ

1.How can I place an order for IRFR320TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR320TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR320TRRPBF reliable?

The price and inventory of IRFR320TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR320TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR320TRRPBF?

IRFR320TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR320TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR320TRRPBF?

For technical support, including IRFR320TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320TRRPBF requirements.

6.How does Aetrix verify that IRFR320TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR320TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR320TRRPBF?

All IRFR320TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR320TRRPBF part is unused and in its original packaging.

Return procedure for IRFR320TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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