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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3709ZTRRPBF

Name: IRFR3709ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR3709ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3709ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3709ZTRRPBF.pdf

Description:: MOSFET N-CH 30V 86A DPAK

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Product details

Overview

IRFR3709ZTRRPBF from Infineon Technologies is a 30V, 86A N-channel enhancement-mode HEXFET Power MOSFET in I-Pak (TO-251) package, featuring 5.2 mΩ R_DS(on) at V_GS = 10 V and ultra-low 17 nC total gate charge. It delivers high-efficiency synchronous rectification in high-frequency buck converters for CPU core power delivery and telecom DC-DC modules.

For engineers reviewing the IRFR3709ZTRRPBF datasheet, IRFR3709ZTRRPBF pinout, IRFR3709ZTRRPBF application, or IRFR3709ZTRRPBF equivalent, key selection criteria include its 6.5 mΩ max R_DS(on) at 4.5 V V_GS, 29 ns typical reverse recovery time, 100% rated avalanche energy capability, and optimized Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on in synchronous FET positions.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve low conduction loss and fast switching dynamics. Its fully characterized unclamped inductive avalanche rating (E_AS = 340 mJ at T_J = 25°C) supports robust operation under transient overloads without external snubbers.

The device integrates an intrinsic body diode with 1.0 V forward voltage (V_SD) at 12 A and 25–37 nC reverse recovery charge (Q_rr). Gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.6 mV/°C) enable stable current sharing in parallel configurations across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V output synchronous buck stages
R_DS(on) max @ 4.5 V	6.5 mΩ - Enables <1 W conduction loss at 40 A RMS in high-current CPU VRMs
Q_g typ	17 nC - Reduces gate drive power and enables use with low-current PWM controllers (e.g., ISL63xx series)
t_r/t_f	12 ns / 3.9 ns - Supports >1 MHz switching frequencies while limiting EMI generation
Q_rr max	37 nC - Minimizes cross-conduction losses during dead-time in synchronous rectifiers
R_θJC	1.9 °C/W - Allows direct heatsinking to PCB copper or small metal clips for thermal management
E_AS	340 mJ - Withstands single-pulse inductive energy from 12 A load current without failure

Pinout & Package

IRFR3709ZTRRPBF uses the I-Pak (TO-251AA) surface-mount package with three leads: Drain (D), Source (S), and Gate (G). The drain tab is electrically connected to lead 1 and thermally coupled to the PCB via exposed copper pad.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Drain Tab)	Power Drain Terminal	Primary current path for high-side or low-side switching; requires thermal pad connection to PCB ground plane
Lead 2 (Source)	Source Reference Node	Common return path for load current and gate drive reference; connects directly to power ground in low-side configuration
Lead 3 (Gate)	Control Input	High-impedance MOS control node; requires <1 Ω series resistance to prevent ringing and overshoot

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	6.5 mΩ max - Enables efficient operation directly from 5 V logic-level gate drivers without level-shifting
Fully characterized avalanche	340 mJ E_AS - Eliminates need for external clamping circuits in hard-switched topologies
Optimized Q_gd/Q_gs1 ratio	5.7 nC / 4.7 nC ≈ 1.2 - Reduces susceptibility to spurious turn-on during high dV/dt transitions at switch node
Low reverse recovery charge	25–37 nC Q_rr - Lowers shoot-through risk and improves light-load efficiency in synchronous rectifier mode

Applications

Server CPU Voltage Regulator

Telecom 48 V to 12 V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.3 V @ up to 200 A to x86 server processors.

IC Role / Device Role: Low-side synchronous rectifier MOSFET in each phase leg.

Use Value: 5.2 mΩ R_DS(on) at 10 V reduces conduction loss by 35% vs. legacy 8 mΩ devices, lowering junction temperature rise by 12°C at full load.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated flyback or forward converter for base station power supplies.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode on secondary winding.

Use Value: 29 ns t_rr and 37 nC Q_rr minimize body-diode conduction loss during dead-time, improving full-load efficiency by 1.8% over 40 V Schottky alternatives.

Industrial PLC Power Module

Automotive ADAS Domain Controller

Use Scenario: 24 V input, 3.3 V/5 V dual-output non-isolated buck converter powering FPGA, microcontroller, and I/O interfaces.

IC Role / Device Role: High-side control FET in primary buck stage.

Use Value: 30 V V_DS rating provides 2× margin over 24 V nominal rail, supporting surge immunity per IEC 61000-4-5 Level 3 (1 kV ring wave).

Use Scenario: 12 V input, 1.1 V/3 A core supply for automotive-grade SoC in camera radar fusion controller.

IC Role / Device Role: Low-side synchronous FET in compact 3-phase interleaved buck regulator.

Use Value: 1.9 °C/W R_θJC enables direct thermal coupling to aluminum heatsink, maintaining T_J < 125°C at 85°C ambient without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3709PbF	Same die, D-Pak (TO-252) package; R_θJA = 50 °C/W vs. 110 °C/W for I-Pak	Better thermal performance on 2-layer PCBs; less suitable for ultra-dense layouts requiring minimal footprint	Select when board-level heatsinking is limited and higher R_θJA can be tolerated
STP30NF20	200 V V_DS, 30 A I_D, 35 mΩ R_DS(on); higher voltage rating but significantly higher on-resistance and gate charge	Suitable only for lower-current, higher-voltage industrial motor drives-not for high-frequency sync rectification	Avoid for CPU VRM or telecom DC-DC; consider only where 200 V blocking is mandatory

Compared with IRLR3709PbF, IRFR3709ZTRRPBF offers identical electrical specs but superior mounting rigidity and lower profile in I-Pak, making it preferred for automated SMT assembly and vibration-prone environments. Versus STP30NF20, it delivers 6.8× lower R_DS(on) and 4.7× lower Q_g, enabling >1 MHz operation with reduced drive complexity.

Availability

IRFR3709ZTRRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRFR3709ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems-designed specifically for synchronous rectification, motor control, and DC-DC regulation where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3709ZTRRPBF supports 61 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 86 A rating at 25°C and reflects safe operation with adequate PCB copper area or heatsink attachment to maintain junction temperature below 175°C.

Does this MOSFET require a gate resistor for reliable switching?

Yes-a 1–5 Ω gate resistor is recommended between driver output and gate terminal to dampen parasitic oscillation caused by trace inductance and device capacitance. Without it, ringing exceeding ±10 V can occur during 10 V gate transitions, risking unintended turn-on or accelerated gate oxide degradation.

Can IRFR3709ZTRRPBF replace IRFR3708 in existing designs?

Yes, with verified performance improvement: IRFR3709ZTRRPBF has 6.5 mΩ R_DS(on) max at 4.5 V versus 8.2 mΩ for IRFR3708, delivering ~20% lower conduction loss at same current. Layout and gate drive remain identical; no redesign needed beyond thermal validation under peak load conditions.

Is the body diode suitable for freewheeling in discontinuous conduction mode?

Yes-the integrated body diode has 1.0 V forward voltage at 12 A and 29–44 ns reverse recovery time, making it viable for DCM operation in buck converters up to 500 kHz. However, for optimal efficiency above 300 kHz, external Schottky or GaN-based synchronous control is recommended to avoid Q_rr-related losses.

IRFR3709ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3709ZTRRPBF FAQ

1.How can I place an order for IRFR3709ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3709ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3709ZTRRPBF reliable?

The price and inventory of IRFR3709ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3709ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3709ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3709ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3709ZTRRPBF?

IRFR3709ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3709ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3709ZTRRPBF?

For technical support, including IRFR3709ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3709ZTRRPBF requirements.

6.How does Aetrix verify that IRFR3709ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3709ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3709ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3709ZTRRPBF?

All IRFR3709ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3709ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3709ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR3709ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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