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Vishay Siliconix IRFR420APBF

Part No.:
IRFR420APBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR420APBF.pdf
Description:
MOSFET N-CH 500V 3.3A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,695

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Product details

Overview

IRFR420APBF from Vishay Siliconix is a 500 V, 3.3 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - optimized for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the IRFR420APBF datasheet, IRFR420APBF pinout, IRFR420APBF application, or IRFR420APBF equivalent, key selection criteria include its 500 V blocking rating, avalanche ruggedness, low Qg/Qgd ratio for fast hard-switching, body diode recovery performance (trr = 330–500 ns), and thermal resistance (RthJC = 1.5 °C/W).

Technical Context

This device employs planar vertical DMOS technology with fully characterized avalanche capability and dV/dt ruggedness up to 3.4 V/ns. Its gate structure minimizes Miller capacitance (Crss = 2.7 pF) and supports stable operation under high dv/dt transients common in flyback and forward converters.

The integrated body diode exhibits 1.6 V forward voltage at 2.5 A and controlled reverse recovery (Qrr = 760–1140 μC), enabling reliable unclamped inductive switching. Thermal design is enabled by low RthJC and a copper-tab DPAK package suitable for direct heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDS500 V - supports 400 V DC bus designs with 25 % margin for surge and ringing
RDS(on) @ VGS = 10 V3.0 Ω - enables <3.3 A continuous conduction at TC = 100 °C with ≤10 W conduction loss
Qg max17 nC - allows simple gate drive with <1 W peak power using standard 10 Ω driver
EAS140 mJ - withstands unclamped inductive energy in 45 mH loads at IAS = 2.5 A without failure
trr330–500 ns - limits diode recovery losses and EMI in hard-switched topologies
RthJC1.5 °C/W - permits >60 W power dissipation with modest heatsink (ΔT = 90 °C)
ID @ TC = 100 °C2.1 A - defines safe operating current under sustained high-temperature PCB mounting

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline per JEDEC MS-012, compatible with IPC-7351B footprint (10.67 × 6.18 mm pad layout recommended).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G)GateControls channel conduction; requires 2.0–4.5 V threshold and ≤±30 V absolute max rating
Pin 2 (D)DrainHigh-side switch node; electrically and thermally connected to exposed copper tab
Pin 3 (S)SourcePower return path; referenced to gate drive ground; carries full load current and body diode reverse recovery current

Key Features

Feature Design Value
Low Qg/Qgd ratio (17 nC / 8.5 nC)Reduces Miller-induced turn-off delay and improves switching controllability in high-dv/dt environments
Fully characterized Coss eff. (28 pF)Enables accurate snubber and resonant timing calculations across 0–400 V VDS range
Specified peak dV/dt immunity (3.4 V/ns)Prevents false turn-on during fast transient events in high-side configurations
140 mJ single-pulse avalanche ratingEliminates need for external clamping in many flyback transformer reset applications
Body diode Qrr = 760–1140 μCSupports predictable recovery behavior in synchronous rectifier or freewheeling roles

Applications

Offline AC-DC Adapters Uninterruptible Power Supplies (UPS)

Use Scenario: Primary-side switch in 65–150 W flyback converters operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–135 kHz with hard switching.

Use Value: 500 V rating accommodates 385 V DC link plus line surges; 140 mJ EAS handles transformer leakage inductance spikes without snubber.

Use Scenario: Inverter stage H-bridge switch in 500–2000 VA line-interactive UPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge output stage; commutated at 20–50 kHz with dead-time control.

Use Value: 3.3 A continuous current and 2.1 A at 100 °C enable compact thermal design; body diode trr ensures clean freewheeling during PWM dead time.

Industrial Motor Drives LED Driver Power Stages

Use Scenario: High-side switch in 24–48 V DC-fed brushless DC motor gate drivers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Fast-switching power FET in three-phase inverter leg; driven by isolated gate driver with 21 Ω series resistance.

Use Value: 8.1 ns turn-on delay and 13 ns fall time minimize switching losses; low Ciss (340 pF) reduces gate drive power demand.

Use Scenario: Buck/boost switch in constant-current LED drivers for street lighting (30–100 W).

IC Role / Device Role / Timing Role: Main energy-transfer switch operating at 100–300 kHz in critical conduction mode (CRM) or fixed-frequency PWM.

Use Value: 3.0 Ω RDS(on) limits conduction loss below 300 mW at 1.5 A; Qg = 17 nC enables efficient 100 kHz+ operation with minimal driver overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP5NK50ZFP500 V, 4.4 Ω RDS(on), 12 nC Qg, TO-220FP packageHigher RDS(on) but lower gate charge; through-hole mounting onlyPreferred where board space allows through-hole and lower gate drive power is critical
IXTP50N10P100 V, 50 A, 0.022 Ω RDS(on), TO-220 packageLower voltage rating; unsuitable for 400 V bus; higher current capacityOnly viable in low-voltage (<120 V) motor or battery-powered applications

Compared with STP5NK50ZFP and IXTP50N10P, the IRFR420APBF offers superior voltage margin and surface-mount compatibility for compact AC-DC designs, while trading off some gate charge efficiency for robust avalanche performance and thermal interface via DPAK drain tab.

Availability

IRFR420APBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR420APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR420APBF belongs to Vishay's high-voltage power MOSFET family designed for rugged, high-efficiency switching in industrial and computing power supplies where avalanche capability and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFR420APBF at 100 °C case temperature?

The IRFR420APBF supports 2.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.3 A rating at 25 °C and ensures safe operation under sustained high-temperature PCB conditions without exceeding junction temperature limits.

Does IRFR420APBF have avalanche capability, and how is it rated?

Yes, the IRFR420APBF is fully rated for repetitive and single-pulse avalanche. It delivers 140 mJ single-pulse avalanche energy (EAS) and supports 2.5 A repetitive avalanche current (IAR) with 5.0 mJ per pulse (EAR). These values are validated per test condition L = 45 mH, Rg = 25 Ω, and starting TJ = 25 °C.

What is the gate threshold voltage range for IRFR420APBF, and why does it matter?

The IRFR420APBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at TJ = 25 °C. This wide range ensures reliable turn-on across process variation and temperature, but requires gate drive circuits to deliver ≥10 V to guarantee full enhancement and minimize RDS(on) dispersion in production systems.

Can IRFR420APBF be used in place of logic-level MOSFETs?

No - the IRFR420APBF is not a logic-level device. Its VGS(th) minimum is 2.0 V, but it requires ≥10 V gate drive to achieve rated RDS(on) = 3.0 Ω. Logic-level equivalents like the IRLR024Z require only 4.5 V for full enhancement and are incompatible due to different threshold and on-resistance profiles.

What is the thermal resistance from junction to case (RthJC) for IRFR420APBF, and how is it measured?

The IRFR420APBF has a maximum junction-to-case (drain) thermal resistance of 1.5 °C/W, measured from the silicon die to the exposed drain tab surface. This value assumes ideal thermal interface (flat, greased surface) and enables precise heatsink sizing when the drain tab is directly mounted to a thermal plane or heatsink.

IRFR420APBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR420APBF FAQ

1.How can I place an order for IRFR420APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR420APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR420APBF reliable?

The price and inventory of IRFR420APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420APBF is usually 5 days.

3.What payment methods are accepted for IRFR420APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR420APBF?

IRFR420APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR420APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR420APBF?

For technical support, including IRFR420APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420APBF requirements.

6.How does Aetrix verify that IRFR420APBF is sourced from the original manufacturer or authorized distributors?

All IRFR420APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420APBF meets industry standards.

7.What is the process for return or replacement of IRFR420APBF?

All IRFR420APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR420APBF part is unused and in its original packaging.

Return procedure for IRFR420APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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