Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR420PBF-BE3

Part No.:
IRFR420PBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR420PBF-BE3.pdf
Description:
N-CHANNEL 500V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,728

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR420PBF-BE3 from Vishay Siliconix is a 500 V, 2.4 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 19 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and industrial motor control snubbers.

For engineers reviewing the IRFR420PBF-BE3 datasheet, IRFR420PBF-BE3 pinout, IRFR420PBF-BE3 application, or IRFR420PBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery performance (trr = 260–520 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for high-reliability 500 V switching.

Technical Context

This third-generation planar vertical MOSFET employs ruggedized silicon design with dynamic dV/dt rating up to 3.5 V/ns and unclamped inductive switching capability (EAS = 400 mJ). Its gate threshold voltage (2.0–4.0 V) and low Qgd/Qg ratio (13/19 nC) support stable hard-switching operation in flyback and resonant topologies.

The device integrates a fast-recovery body diode (Qrr = 0.70–1.4 μC, trr = 260–520 ns) and exhibits linear thermal derating (0.020 W/°C on PCB mount), enabling predictable thermal management in compact surface-mount layouts without heatsinks.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - Supports primary-side switching in offline SMPS up to 400 V DC bus with margin.
RDS(on) 3.0 Ω @ VGS = 10 V - Enables <2.4 A continuous conduction with ≤17.3 W I²R loss at max current.
Qg 19 nC - Determines gate drive power requirement; compatible with standard 1-A peak drivers.
EAS 400 mJ - Withstands single-pulse inductive energy events without failure in snubber or clamp circuits.
trr 260–520 ns - Limits reverse recovery losses during hard commutation in bridge configurations.
PD (PCB mount) 2.5 W @ TA = 25 °C - Defines usable power envelope on 1" FR-4 board without thermal vias or copper pour.
RthJA (PCB) 50 °C/W - Enables junction temperature estimation under real board-level thermal conditions.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for automated assembly and high-voltage isolation.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; 100 nA leakage ensures low standby current in always-on circuits.
D (Drain) High-side power terminal Connected to exposed thermal pad; carries full load current and supports avalanche energy absorption.
S (Source) Reference node / return path Provides low-inductance source connection; internal LS = 7.5 nH impacts switching waveform fidelity.

Key Features

Feature Design Value
Repetitive avalanche rated Enables reliable operation under transient overvoltage conditions (IAR = 2.4 A, EAR = 4.2 mJ) without derating.
Dynamic dV/dt immunity Rated to 3.5 V/ns-prevents false turn-on in high-di/dt environments like motor drives and PFC stages.
Fast switching td(on)/tr = 8.0/8.6 ns enables >500 kHz operation in isolated DC-DC converters with minimal overlap loss.
Surface-mount (DPAK) Compatible with vapor-phase and IR reflow; footprint matches JEDEC TO-252AA for standardized PCB layout.
Low Qgd/Qg ratio 68% of gate charge allocated to Miller region-improves controllability during cross-conduction in half-bridge designs.

Applications

AC-DC Auxiliary Power Supply Industrial Motor Control Snubber

Use Scenario: Provides bias supply for gate drivers and controllers in 3-phase inverters using discrete IGBTs or SiC MOSFETs.

IC Role / Device Role / Timing Role: High-voltage switch in flyback converter operating at 65–100 kHz with 500 V input.

Use Value: Avalanche rating absorbs transformer leakage energy; 2.5 W PCB-mount dissipation eliminates need for heatsink in space-constrained enclosures.

Use Scenario: Clamps voltage spikes across IGBT collector-emitter during turn-off in 400 V motor drives.

IC Role / Device Role / Timing Role: Passive snubber switch absorbing inductive kickback in <10 μs events.

Use Value: 400 mJ single-pulse avalanche energy withstands repeated switching transients without degradation.

Offline LED Driver Primary Switch High-Voltage DC-DC Converter

Use Scenario: Primary-side switch in non-isolated buck-boost LED drivers for street lighting (input 277 V AC rectified).

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 50–150 kHz with 400 V DC link.

Use Value: 3.5 V/ns dV/dt immunity prevents spurious turn-on from coupling noise in high-density LED driver PCBs.

Use Scenario: Step-down regulator converting 400 V DC bus to 24 V for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch in forward or active-clamp topology.

Use Value: Fast body diode (trr = 260 ns) reduces reverse recovery loss when used as freewheeling device in synchronous rectification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
SiHFR420-GE3 Same die, identical RDS(on), Qg, and avalanche ratings; Pb-free/halogen-free per JEDEC J-STD-609. No functional difference; fully interchangeable in new designs requiring RoHS-compliant materials. Select SiHFR420-GE3 for lead-free manufacturing compliance without electrical or thermal trade-offs.
IRFU420PBF Same silicon but IPAK (TO-251) through-hole package; higher RthJC (3.0 °C/W vs. DPAK's 3.0 °C/W), same 42 W case dissipation. Requires wave soldering and larger PCB area; better suited for prototyping or low-volume manual assembly. Choose IRFU420PBF only when through-hole mounting is mandated by mechanical or reliability requirements.

Compared with IRFR420PBF-BE3, SiHFR420-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFU420PBF trades surface-mount efficiency for through-hole robustness-neither is pin-compatible due to differing packages (DPAK vs. IPAK), requiring layout revision.

Availability

IRFR420PBF-BE3 is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial motor control snubbers, and high-voltage DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for IRFR420PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR420PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective integration into offline power conversion systems.

FAQ

What is the maximum continuous drain current for IRFR420PBF-BE3 at 100 °C case temperature?

The IRFR420PBF-BE3 supports 1.5 A continuous drain current at TC = 100 °C, reflecting its linear derating factor of 0.33 W/°C from the 42 W maximum at 25 °C. This value is critical for thermal design validation in enclosed industrial enclosures where case temperature exceeds ambient.

Does IRFR420PBF-BE3 have avalanche capability, and how is it rated?

Yes, IRFR420PBF-BE3 is repetitively avalanche rated: IAR = 2.4 A and EAR = 4.2 mJ under specified pulse conditions. It also supports single-pulse avalanche energy up to 400 mJ (EAS), verified per Fig. 12 in the official datasheet with L = 124 mH and Rg = 25 Ω.

What is the gate threshold voltage range for IRFR420PBF-BE3, and why does it matter?

The gate threshold voltage (VGS(th)) for IRFR420PBF-BE3 is 2.0–4.0 V at ID = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental activation from noise-critical in high-noise motor drive or industrial power environments.

Can IRFR420PBF-BE3 be used in synchronous rectification applications?

IRFR420PBF-BE3 can serve as a synchronous rectifier in medium-frequency DC-DC converters, leveraging its body diode's trr = 260–520 ns and VSD = 1.6 V at 2.4 A. However, its RDS(on) = 3.0 Ω limits efficiency above ~1 A; dedicated low-RDS(on) rectifiers are preferred for high-current outputs.

What is the thermal resistance from junction to ambient for IRFR420PBF-BE3 on a standard PCB?

When mounted on a 1" square FR-4 PCB, IRFR420PBF-BE3 has RthJA = 50 °C/W. This value-distinct from the 110 °C/W rating for free-air operation-enables accurate junction temperature prediction (TJ = TA + PD × 50) in real-world board-level thermal designs.

IRFR420PBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

IRFR420PBF-BE3 FAQ

1.How can I place an order for IRFR420PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR420PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR420PBF-BE3 reliable?

The price and inventory of IRFR420PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR420PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR420PBF-BE3?

IRFR420PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR420PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR420PBF-BE3?

For technical support, including IRFR420PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420PBF-BE3 requirements.

6.How does Aetrix verify that IRFR420PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR420PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR420PBF-BE3?

All IRFR420PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR420PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR420PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR420PBF-BE3 Tags

  • IRFR420PBF-BE3
  • IRFR420PBF-BE3 PDF
  • IRFR420PBF-BE3 Datasheet
  • IRFR420PBF-BE3 Specifications
  • IRFR420PBF-BE3 Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR420PBF-BE3
  • Buy IRFR420PBF-BE3
  • IRFR420PBF-BE3 Price
  • IRFR420PBF-BE3 Distributor
  • IRFR420PBF-BE3 Supplier
  • IRFR420PBF-BE3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER