Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR420TR

Part No.:
IRFR420TR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR420TR.pdf
Description:
MOSFET N-CH 500V 2.4A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,590

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR420TR from Vishay Siliconix is a 500 V, 2.4 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 19 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS primary-side switching, and industrial motor control.

For engineers reviewing the IRFR420TR datasheet, IRFR420TR pinout, IRFR420TR application, or IRFR420TR equivalent, key selection criteria include its 500 V blocking capability, 42 W TC power dissipation, dV/dt ruggedness of 3.5 V/ns, and compatibility with standard DPAK PCB footprints and reflow profiles.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and avalanche robustness. Its planar stripe cell structure delivers stable RDS(on) over temperature and low gate charge (Qg = 19 nC, Qgd = 13 nC), enabling efficient hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits trr = 260–520 ns and Qrr = 0.70–1.4 μC at IF = 2.1 A, supporting moderate-frequency freewheeling in flyback and forward converters. Thermal resistance RthJC = 3.0 °C/W enables direct heatsink mounting for high-power operation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - supports 400 V DC bus designs with 25 % margin for voltage spikes
RDS(on) @ VGS = 10 V3.0 Ω - determines conduction loss in continuous current paths up to 2.4 A
Qg19 nC - defines gate drive energy requirement and switching speed in hard-switched circuits
EAS400 mJ - enables unclamped inductive switching without failure under defined test conditions
PD @ TC = 25 °C42 W - achievable with direct case-to-heatsink thermal path, not PCB-only mounting
dV/dt Rating3.5 V/ns - ensures immunity to parasitic turn-on during high dv/dt transients in bridge configurations
TJ Range−55 to +150 °C - supports operation in industrial ambient environments with derating

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage switching applications.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V ensures reliable turn-on with standard gate drivers
D (Drain)High-voltage output nodeConnected to 500 V rail; electrically and thermally tied to exposed backside metal pad
S (Source)Power return / referenceServes as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under transient overloads (IAR = 2.4 A, EAR = 4.2 mJ) without derating or external snubbers
Dynamic dV/dt rating3.5 V/ns immunity prevents false triggering in high-speed half-bridge or LLC resonant converter nodes
Low Qgd/Qg ratio68 % (13/19 nC) reduces Miller-induced switching delay and improves controllability in high-frequency PWM
Surface-mount (DPAK)Compatible with automated assembly and vapor-phase/reflow soldering; thermal pad enables >30 W dissipation on 1" FR-4 PCB
Fast body diode recoverytrr = 260 ns typical allows use in discontinuous conduction mode (DCM) flyback without significant switching loss penalty

Applications

Offline AC-DC AdaptersIndustrial DC-DC Converters

Use Scenario: 50–100 W universal-input (85–265 VAC) flyback converter powering industrial sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating in DCM at 65–130 kHz, handling peak drain currents up to 2.4 A.

Use Value: 500 V rating accommodates reflected output voltage plus line surge; 3.0 Ω RDS(on) keeps conduction loss below 180 mW at full load.

Use Scenario: 48 V input to ±15 V dual-output forward converter for servo amplifier gate drivers.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward topology, switching at 200 kHz with 50 % duty cycle.

Use Value: Repetitive avalanche rating absorbs clamp energy; 19 nC Qg enables clean turn-off with 10 Ω gate resistor and minimal overshoot.

LED Driver Power StagesMotor Control H-Bridge Legs

Use Scenario: Constant-current buck-boost LED driver for street lighting (30–60 VOUT, 1.5 A), operating from rectified 230 VAC.

IC Role / Device Role / Timing Role: High-side switch in buck-boost controller IC interface, handling 500 V transients during mains dropout.

Use Value: 400 mJ single-pulse avalanche energy withstands line dips and capacitor discharge events without failure.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for HVAC actuators, requiring bidirectional current control and regenerative braking.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling path via body diode during PWM off-time.

Use Value: Body diode VSD = 1.6 V at 2.4 A minimizes conduction loss during regeneration; trr < 520 ns avoids shoot-through in 20 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP5NK50ZFP500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 17 nC, TO-220FP packageHigher current rating but through-hole only; no surface-mount optionSelect when higher continuous current (>2.4 A) is required and board space permits leaded mounting.
SiHFR420TR-GE3Same die, identical specs, Vishay halogen-free variant in same DPAK packageNo functional difference; RoHS-compliant material set onlySelect when lead-free/halogen-free compliance is mandated by end-product environmental requirements.

Compared with STP5NK50ZFP and SiHFR420TR-GE3, the IRFR420TR offers identical electrical performance in a surface-mount DPAK package with legacy PbF marking, making it optimal for cost-sensitive, space-constrained industrial power supplies where tape-and-reel automation is required.

Availability

IRFR420TR is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and motor control H-bridge legs requiring stable component supply across extended production lifecycles.

Supply support for IRFR420TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR420TR belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for rugged switching in offline power supplies and industrial motor drives where avalanche tolerance and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRFR420TR at 100 °C case temperature?

The IRFR420TR supports 1.5 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package when mounted on a heatsink or thermally enhanced PCB. At TC = 25 °C, the rating rises to 2.4 A. Designers must verify junction temperature using RthJC = 3.0 °C/W and actual power dissipation to ensure TJ stays within −55 to +150 °C range.

Does IRFR420TR have a specified body diode reverse recovery time (trr)?

Yes, the IRFR420TR datasheet specifies trr = 260–520 ns at TJ = 25 °C, IF = 2.1 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating switching losses in flyback and forward converters where the body diode conducts during dead time. The wide range reflects process variation and test condition sensitivity; design margins should use the upper bound.

Is IRFR420TR pin-compatible with other DPAK-packaged 500 V MOSFETs like STP5NK50ZFP?

No, IRFR420TR is not pin-compatible with STP5NK50ZFP because the latter uses TO-220FP (through-hole) packaging, while IRFR420TR uses DPAK (TO-252) surface-mount packaging. Pin count and physical layout differ fundamentally: IRFR420TR has G-D-S in DPAK outline, whereas STP5NK50ZFP has G-D-S in vertical TO-220FP leadform. PCB footprint and assembly process are incompatible.

What is the gate-source threshold voltage (VGS(th)) range for IRFR420TR?

The IRFR420TR has a gate-source threshold voltage range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This means the device begins conducting significantly above 2.0 V and is fully enhanced near 4.0 V under standard test conditions. For robust turn-on in noisy environments, gate drive should exceed 10 V to ensure low RDS(on) and minimize conduction loss.

Can IRFR420TR be used in avalanche-mode operation, and what are the limits?

Yes, IRFR420TR is explicitly repetitive avalanche rated: IAR = 2.4 A and EAR = 4.2 mJ, with pulse width limited by maximum junction temperature. Single-pulse avalanche energy is rated at 400 mJ. Operation in avalanche requires strict adherence to the test conditions in Figure 12 (L = 124 mH, Rg = 25 Ω, VDD = 50 V), and thermal management must prevent TJ exceeding 150 °C during repeated events.

IRFR420TR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR420TR FAQ

1.How can I place an order for IRFR420TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR420TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR420TR reliable?

The price and inventory of IRFR420TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420TR is usually 5 days.

3.What payment methods are accepted for IRFR420TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR420TR?

IRFR420TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR420TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR420TR?

For technical support, including IRFR420TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420TR requirements.

6.How does Aetrix verify that IRFR420TR is sourced from the original manufacturer or authorized distributors?

All IRFR420TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420TR meets industry standards.

7.What is the process for return or replacement of IRFR420TR?

All IRFR420TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR420TR part is unused and in its original packaging.

Return procedure for IRFR420TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR420TR Tags

  • IRFR420TR
  • IRFR420TR PDF
  • IRFR420TR Datasheet
  • IRFR420TR Specifications
  • IRFR420TR Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR420TR
  • Buy IRFR420TR
  • IRFR420TR Price
  • IRFR420TR Distributor
  • IRFR420TR Supplier
  • IRFR420TR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER