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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR420TRLPBF

Name: IRFR420TRLPBF
Brand: Vishay Siliconix
SKU: IRFR420TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR420TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR420TRLPBF.pdf

Description:: MOSFET N-CH 500V 2.4A DPAK

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Product details

Overview

IRFR420TRLPBF from Vishay Siliconix is a 500 V, 2.4 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS primary-side switching, and industrial motor control.

For engineers reviewing the IRFR420TRLPBF datasheet, IRFR420TRLPBF pinout, IRFR420TRLPBF application, or IRFR420TRLPBF equivalent, key selection criteria include its 500 V blocking capability, 42 W T_C power dissipation, dV/dt ruggedness (3.5 V/ns), unclamped inductive switching robustness (400 mJ single-pulse E_AS), and lead-free/halogen-free compliance per JEDEC TO-252AA.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and ruggedness in hard-switched topologies. Its planar stripe cell structure enables stable R_DS(on) over temperature and low gate charge (Q_g = 19 nC, Q_gd = 13 nC), supporting efficient operation at 100–500 kHz in flyback and forward converters.

The integrated body diode exhibits t_rr = 260–520 ns and Q_rr = 0.70–1.4 μC under specified conditions, enabling moderate-frequency synchronous rectification or freewheeling in non-isolated buck-derived topologies where reverse recovery behavior is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for surge and ringing
R_DS(on) max	3.0 Ω at V_GS = 10 V - enables <2.4 A continuous conduction with ≤17.3 W I²R loss at full current
Q_g max	19 nC - determines gate drive power requirement and switching speed in 100–300 kHz applications
E_AS	400 mJ (single pulse) - withstands unclamped inductive energy in primary-side snubberless flyback designs
T_J range	−55 °C to +150 °C - supports industrial ambient environments without derating below 100 °C case temperature
R_thJC	3.0 °C/W - enables 42 W power dissipation with ≤126 °C junction rise above 25 °C case
dV/dt rating	3.5 V/ns - suppresses false turn-on during high dv/dt transients in high-side switch configurations

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standard 3-pin configuration optimized for PCB heat spreading using 1" FR-4 copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 360 pF dictates gate resistor selection for EMI-controlled switching
D (Drain)	High-voltage power terminal	Connected to exposed thermal pad; carries full load current and must be routed with clearance ≥2.5 mm for 500 V working voltage
S (Source)	Reference node / return path	Provides Kelvin connection point for current sensing; internal source inductance L_S = 7.5 nH affects gate drive loop stability

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads (I_AR = 2.4 A, E_AR = 4.2 mJ) without external clamping in cost-sensitive SMPS
Dynamic dV/dt rating	3.5 V/ns immunity prevents spurious turn-on during fast-rising drain transients in high-side or half-bridge configurations
Surface-mount (DPAK)	Compatible with vapor-phase and IR reflow; thermal pad requires ≥1"² FR-4 copper pour for 2.5 W PCB-mount power handling
Fast switching	td(on) = 8 ns, tr = 8.6 ns, td(off) = 33 ns - supports >200 kHz operation with minimal overlap loss in hard-switched converters
Low Q_gd/Q_g ratio	13/19 = 68 % - improves Miller immunity and enables stable gate drive with moderate R_g values (10–22 Ω)

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: 5–20 W universal-input (85–265 V_AC) flyback converter powering IoT gateways and smart sensors. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–130 kHz with self-supplied gate drive. Use Value: 500 V V_DS and 400 mJ E_AS eliminate need for external RCD clamp, reducing BOM count and board space.	Use Scenario: 48 V input, 12 V output isolated forward converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Main switch in primary-side power stage, synchronized to PWM controller with 100–200 kHz frequency. Use Value: 3.0 Ω R_DS(on) and 19 nC Q_g enable >88 % efficiency at full load while maintaining thermal margin on 2-layer PCB.
Motor Drive Half-Bridge	LED Driver Power Stage
Use Scenario: 24–48 V brushed DC motor control in HVAC actuators and valve positioners. IC Role / Device Role / Timing Role: Low-side switch in H-bridge with PWM duty cycle up to 95 % and 20 kHz switching frequency. Use Value: Repetitive avalanche rating (I_AR = 2.4 A) safely absorbs inductive kickback during rapid PWM transitions without snubber.	Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300–400 V_DC input. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into coupled inductor at 150 kHz. Use Value: 3.5 V/ns dV/dt rating prevents false triggering during high dv/dt across output diode during commutation.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: 5–20 W universal-input (85–265 V_AC) flyback converter powering IoT gateways and smart sensors.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–130 kHz with self-supplied gate drive.

Use Value: 500 V V_DS and 400 mJ E_AS eliminate need for external RCD clamp, reducing BOM count and board space.

Use Scenario: 48 V input, 12 V output isolated forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Main switch in primary-side power stage, synchronized to PWM controller with 100–200 kHz frequency.

Use Value: 3.0 Ω R_DS(on) and 19 nC Q_g enable >88 % efficiency at full load while maintaining thermal margin on 2-layer PCB.

Motor Drive Half-Bridge

LED Driver Power Stage

Use Scenario: 24–48 V brushed DC motor control in HVAC actuators and valve positioners.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge with PWM duty cycle up to 95 % and 20 kHz switching frequency.

Use Value: Repetitive avalanche rating (I_AR = 2.4 A) safely absorbs inductive kickback during rapid PWM transitions without snubber.

Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300–400 V_DC input.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into coupled inductor at 150 kHz.

Use Value: 3.5 V/ns dV/dt rating prevents false triggering during high dv/dt across output diode during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V, 4.0 A, R_DS(on) = 1.8 Ω, Q_g = 12 nC, TO-220FP package	Higher current rating but through-hole; lacks repetitive avalanche rating and dV/dt spec	Prefer when higher continuous current (>2.4 A) and lower conduction loss are required, and board space allows through-hole mounting.
SiHFU420-GE3	Same die, IPAK (TO-251) package, identical electrical specs, straight-lead through-hole variant	Identical performance but different mechanical mounting; no thermal pad, lower PCB power dissipation (2.5 W vs. 42 W)	Select when legacy through-hole assembly is mandated or when thermal management via heatsink is preferred over PCB copper area.

Compared with STP4NK50ZFP, IRFR420TRLPBF offers superior dV/dt immunity and avalanche ruggedness but lower current and higher R_DS(on); versus SiHFU420-GE3, it delivers identical silicon performance in a surface-mount DPAK form factor enabling automated assembly and improved thermal coupling to PCB.

Availability

IRFR420TRLPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and motor drive half-bridge circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFR420TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR420TRLPBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for cost-effective, high-efficiency switching in industrial power supplies, motor controls, and lighting systems where avalanche capability and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRFR420TRLPBF at 100 °C case temperature?

The maximum continuous drain current for IRFR420TRLPBF is 1.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C. The IRFR420TRLPBF datasheet confirms this value with linear derating factor of 0.33 W/°C from 25 °C.

Does IRFR420TRLPBF support logic-level gate drive?

No, IRFR420TRLPBF is not a logic-level MOSFET; its gate-source threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Full enhancement requires ≥10 V gate drive; operation at 5 V yields significantly higher R_DS(on) and is not guaranteed. The IRFR420TRLPBF specification sheet explicitly states V_GS = 10 V test condition for on-resistance and does not list 5 V parameters.

What is the recommended PCB layout for thermal management of IRFR420TRLPBF?

Vishay recommends mounting IRFR420TRLPBF on a minimum 1" square FR-4 PCB copper area for 2.5 W power dissipation, with the exposed drain pad soldered directly to this plane. Application Note 826 specifies pad dimensions: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the thermal pad, with 0.055" (1.397 mm) solder mask opening. Thermal vias under the pad improve conduction to inner layers; the IRFR420TRLPBF DPAK outline supports this per TO-252AA mechanical drawings.

Is IRFR420TRLPBF suitable for avalanche operation in repetitive mode?

Yes, IRFR420TRLPBF is explicitly rated for repetitive avalanche operation: I_AR = 2.4 A and E_AR = 4.2 mJ (pulse width limited by T_J(max)). This capability is confirmed in the Absolute Maximum Ratings table and supported by Fig. 12c (Maximum Avalanche Energy vs. Drain Current). Designers must ensure pulse width and duty cycle keep junction temperature within −55 °C to +150 °C; the IRFR420TRLPBF datasheet notes this is a repetitive rating with thermal limitation.

What is the body diode reverse recovery time (t_rr) of IRFR420TRLPBF under standard test conditions?

The body diode reverse recovery time t_rr for IRFR420TRLPBF is 260–520 ns, measured at T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs, as specified in the Diode Characteristics table. This parameter impacts switching loss in synchronous rectification or freewheeling paths; the IRFR420TRLPBF datasheet provides typical waveforms in Fig. 7 and Fig. 14 to characterize diode behavior.

IRFR420TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR420TRLPBF FAQ

1.How can I place an order for IRFR420TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR420TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR420TRLPBF reliable?

The price and inventory of IRFR420TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR420TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR420TRLPBF?

IRFR420TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR420TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR420TRLPBF?

For technical support, including IRFR420TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420TRLPBF requirements.

6.How does Aetrix verify that IRFR420TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR420TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR420TRLPBF?

All IRFR420TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR420TRLPBF part is unused and in its original packaging.

Return procedure for IRFR420TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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