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Vishay Siliconix IRFR420TRPBF-BE3
- Part No.:
- IRFR420TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR420TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 500V 2.4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,150
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Product details
Overview
IRFR420TRPBF-BE3 from Vishay Siliconix is a 500 V, 2.4 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 19 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and industrial motor control snubbers.
For engineers reviewing the IRFR420TRPBF-BE3 datasheet, IRFR420TRPBF-BE3 pinout, IRFR420TRPBF-BE3 application, or IRFR420TRPBF-BE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.
Technical Context
This third-generation planar vertical MOSFET uses ruggedized silicon design with dynamic dV/dt rating up to 3.5 V/ns and specified unclamped inductive switching capability (EAS = 400 mJ). Its gate threshold voltage (2.0–4.0 V) enables standard 10 V gate drive compatibility while maintaining low leakage (IDSS ≤ 25 μA at 500 V).
The device integrates a fast-recovery body diode (trr = 260–520 ns, Qrr = 0.70–1.4 μC) and exhibits linear SOA behavior up to 100 °C case temperature. Thermal resistance is rated at RthJC = 3.0 °C/W (junction-to-case) and RthJA = 50 °C/W (PCB mount), supporting stable operation under forced-air or heatsink-limited conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in offline flyback and forward converters up to 400 V DC bus. |
| RDS(on) | 3.0 Ω @ VGS = 10 V - determines conduction loss in continuous current paths; enables <2.4 A RMS handling with <17 W I²R loss at full load. |
| Qg | 19 nC - defines gate drive energy requirement; compatible with standard 1-A peak gate drivers for <100 kHz switching. |
| EAS | 400 mJ - specifies single-pulse avalanche robustness during inductive turn-off transients without external clamping. |
| tr/tf | 8.6 ns / 16 ns - enables fast edge control in hard-switched topologies; reduces overlap loss in synchronous rectification. |
| TJ Range | –55 to +150 °C - validated for industrial ambient environments; junction temperature monitoring required above 100 °C case. |
| ID (TC = 100 °C) | 1.5 A - reflects thermal derating limit for sustained operation on 1" FR-4 PCB without heatsink. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction; 3-pin configuration optimized for automated reflow assembly using vapor phase or infrared soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; input capacitance Ciss = 360 pF shapes Miller effect and gate drive loop stability. |
| D (Drain) | High-side power terminal | Connected to PCB thermal pad; carries full load current and withstands 500 V transient spikes; internal inductance LD = 4.5 nH affects switching ringing. |
| S (Source) | Reference and return path | Provides ground reference for gate drive; internal source inductance LS = 7.5 nH influences diode reverse recovery behavior and shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under unclamped inductive loads (IAR = 2.4 A, EAR = 4.2 mJ) without external protection circuitry. |
| Dynamic dV/dt rating | 3.5 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in high-side switch configurations. |
| Fast body diode recovery | trr = 260–520 ns with Qrr = 0.70–1.4 μC supports quasi-resonant and ZVS designs with minimal commutation loss. |
| Surface-mount DPAK | TO-252 outline allows high-power density layout; thermal pad enables direct copper pour connection for RthJA = 50 °C/W on FR-4. |
| Low gate charge | Qg = 19 nC minimizes driver power consumption and simplifies gate resistor selection for <100 kHz applications. |
Applications
| AC-DC Auxiliary Power Supply | Industrial Motor Control Snubber |
|---|---|
|
Use Scenario: Provides isolated bias supply for gate drivers in 3-phase IGBT inverters using flyback topology with 375 V DC bus. IC Role / Device Role / Timing Role: Primary-side switching MOSFET operating at 65 kHz with discontinuous conduction mode (DCM). Use Value: 500 V VDS rating ensures margin against reflected voltage spikes; 3.0 Ω RDS(on) limits conduction loss to <1.5 W at 1.2 A average current. |
Use Scenario: Absorbs turn-off energy from IGBTs in variable-frequency drives controlling 10 kW induction motors. IC Role / Device Role / Timing Role: Clamping switch activated during IGBT commutation to limit dv/dt and suppress voltage overshoot. Use Value: Repetitive avalanche rating (EAR = 4.2 mJ) sustains >10⁶ cycles of 2.4 A clamping current without degradation. |
| High-Voltage DC-DC Converter | LED Driver Secondary-Side Switch |
|
Use Scenario: Step-down converter for 400 V battery systems powering telecom base station cooling fans. IC Role / Device Role / Timing Role: Synchronous rectifier in active-clamp forward topology operating at 100 kHz with 50% duty cycle. Use Value: Fast tr/tf (8.6/16 ns) and low Qgd/Qgs ratio (13/3.3 nC) reduce dead-time losses and improve efficiency above 92%. |
Use Scenario: Constant-current switch in isolated LED streetlight drivers with 350 V DC link and analog dimming interface. IC Role / Device Role / Timing Role: Low-duty-cycle PWM switch controlling LED string current in secondary-side regulation loop. Use Value: Body diode trr < 520 ns prevents cross-conduction during zero-voltage switching transitions; VGS(th) range (2.0–4.0 V) ensures clean turn-on with 3.3 V microcontroller output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR430TRPBF-BE3 | Higher VDS = 600 V, RDS(on) = 3.5 Ω, Qg = 22 nC | Better voltage margin for 480 VAC-input systems; higher conduction loss at same current | Select when system requires >550 V blocking capability and can accommodate +17% gate drive energy. |
| SiHFR420-GE3 | Same VDS, RDS(on), Qg; halogen-free, RoHS-compliant variant with identical TO-252 footprint | No functional difference; qualified for lead-free reflow per JEDEC J-STD-020 | Choose for compliance-critical industrial or automotive programs requiring material declaration and Pb-free process validation. |
Compared with IRFR420TRPBF-BE3, IRFR430TRPBF-BE3 trades higher voltage headroom for increased conduction and switching loss, while SiHFR420-GE3 provides identical electrical performance with enhanced environmental compliance-neither is pin-compatible without verifying tape-and-reel orientation and marking conventions per Vishay's ordering matrix.
Availability
IRFR420TRPBF-BE3 is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial motor control snubbers, and high-voltage DC-DC converters requiring stable component supply across extended production lifecycles.
Supply support for IRFR420TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR420TRPBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness in unclamped inductive switching and optimized for surface-mount power conversion stages in space-constrained designs.
FAQ
What is the maximum continuous drain current for IRFR420TRPBF-BE3 at 100 °C case temperature?
The maximum continuous drain current for IRFR420TRPBF-BE3 is 1.5 A when the case temperature reaches 100 °C. This value is derived from linear derating of the 2.4 A rating at 25 °C, using a factor of 0.33 W/°C and accounting for thermal resistance to ambient (RthJA = 50 °C/W on PCB mount). Operation above this current requires active heatsinking or reduced ambient temperature to maintain junction temperature below 150 °C.
Does IRFR420TRPBF-BE3 support logic-level gate drive?
No, IRFR420TRPBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, and it is specified for RDS(on) at VGS = 10 V. While it may partially turn on with 5 V drive, full enhancement requires ≥10 V to achieve the rated 3.0 Ω on-resistance. For true logic-level operation, consider Vishay's SiHFx4xx series with VGS(th) ≤ 2.5 V and RDS(on) guaranteed at 4.5 V.
What is the recommended PCB pad layout for IRFR420TRPBF-BE3 in DPAK (TO-252) package?
Vishay recommends a minimum copper pad of 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal tab of IRFR420TRPBF-BE3, with 0.055" (1.397 mm) clearance to adjacent traces. The pad should connect directly to an internal ground plane via ≥4 thermal vias (0.3 mm diameter) to achieve the specified RthJA = 50 °C/W. Detailed dimensions are published in Application Note 826 (Document #72594).
Can IRFR420TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, IRFR420TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 2.4 A and EAR = 4.2 mJ per pulse, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (TJ ≤ 150 °C). This capability eliminates need for external clamping diodes in snubberless flyback or inductive load switching circuits.
What is the body diode reverse recovery charge (Qrr) of IRFR420TRPBF-BE3, and why does it matter?
The body diode reverse recovery charge of IRFR420TRPBF-BE3 is 0.70–1.4 μC, measured at TJ = 25 °C with IF = 2.1 A and dI/dt = 100 A/μs. Qrr directly impacts switching loss and EMI in hard-switched topologies: lower Qrr reduces tail current and associated heat generation during commutation, improving efficiency and reliability in high-frequency DC-DC converters.
IRFR420TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR420TRPBF-BE3 FAQ
1.How can I place an order for IRFR420TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR420TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR420TRPBF-BE3 reliable?
The price and inventory of IRFR420TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR420TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR420TRPBF-BE3?
IRFR420TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR420TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR420TRPBF-BE3?
For technical support, including IRFR420TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR420TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR420TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR420TRPBF-BE3?
All IRFR420TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR420TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR420TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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