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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR420TRR

Name: IRFR420TRR
Brand: Vishay Siliconix
SKU: IRFR420TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR420TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR420TRR.pdf

Description:: MOSFET N-CH 500V 2.4A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR420TRR from Vishay Siliconix is a 500 V, 2.4 A N-channel power MOSFET in DPAK (TO-252) surface-mount package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and repetitive avalanche rating up to 2.4 A - designed for high-voltage DC-DC converters, offline SMPS snubber circuits, and industrial motor control interface stages.

For engineers reviewing the IRFR420TRR datasheet, IRFR420TRR pinout, IRFR420TRR application, or IRFR420TRR equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (t_rr = 260–520 ns), and direct-mount PCB thermal performance (R_thJA = 50 °C/W on 1" FR-4).

Technical Context

This third-generation planar VDMOS device uses ruggedized silicon design with dynamic dV/dt rating (3.5 V/ns) and unclamped inductive switching capability (E_AS = 400 mJ). Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (13/19 nC) support stable hard-switching operation above 100 kHz in flyback and forward topologies.

The integrated body diode exhibits 1.6 V forward drop at 2.4 A and controlled reverse recovery (Q_rr = 0.70–1.4 μC), enabling reliable synchronous rectification replacement in low-duty-cycle HV applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % safety margin for line transients
R_DS(on)	3.0 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 1.4 A continuous drain current
Q_g	19 nC - determines gate drive power requirement (~190 μJ per switch cycle at 10 V)
I_D (T_C = 100 °C)	1.5 A - defines maximum continuous current under heatsink-limited thermal conditions
E_AS	400 mJ - specifies single-pulse avalanche energy handling without failure in inductive turn-off
t_rr	260–520 ns - sets minimum dead-time requirement to prevent shoot-through in half-bridge configurations
R_thJA (PCB mount)	50 °C/W - quantifies junction-to-ambient thermal resistance on standard 1" FR-4 board, critical for no-heatsink designs

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration optimized for automated placement and vapor-phase reflow.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≤12.6 Ω gate resistance to limit ringing during fast switching
D (Drain)	High-side power terminal	Connected to HV rail; electrically tied to exposed copper pad for thermal dissipation and EMI shielding
S (Source)	Reference node / return path	Forms common reference for gate drive and current sensing; internal source inductance (L_S = 7.5 nH) affects di/dt-induced voltage spikes

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.4 A I_AR and 4.2 mJ E_AR without degradation - eliminates need for external clamping in overvoltage fault conditions
Dynamic dV/dt immunity	Rated 3.5 V/ns - prevents false turn-on during high-slew-rate voltage transients in bridge-leg operation
Fast switching	td(on) = 8.0 ns, tf = 16 ns - enables >500 kHz operation in resonant converters with minimal overlap loss
Surface-mount (DPAK)	Compatible with standard SMT assembly; thermal pad allows 2.5 W dissipation on PCB without heatsink
Low Q_gd/Q_g ratio	68 % (13/19 nC) - improves Miller immunity and reduces required gate drive current during transition

Applications

Industrial Motor Drives	AC-DC Power Supplies
Use Scenario: Isolated gate driver interface for 3-phase inverter IGBT/MOSFET high-side switches in HVAC blower modules. IC Role / Device Role / Timing Role: High-voltage level-shifting switch controlling bootstrap capacitor recharge path. Use Value: 500 V rating withstands 400 V DC link with margin; 2.4 A pulsed current handles peak bootstrap charging demands.	Use Scenario: Active clamp snubber switch in 30–60 W offline flyback converters. IC Role / Device Role / Timing Role: Transient energy diversion path during primary switch turn-off. Use Value: 400 mJ E_AS absorbs leakage inductance energy without external TVS; DPAK footprint simplifies layout.
LED Driver Circuits	DC-DC Converters
Use Scenario: High-side switch in constant-current buck LED drivers for street lighting (200–400 V input). IC Role / Device Role / Timing Role: Primary power switch regulating average LED current via PWM dimming. Use Value: 3.0 Ω R_DS(on) limits conduction loss to <1.2 W at 2 A; 150 °C T_J(max) supports sealed outdoor enclosures.	Use Scenario: Synchronous rectifier replacement in isolated forward converter secondary side. IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode in 24–48 V output stage. Use Value: Body diode t_rr = 260 ns enables safe commutation; 1.6 V V_SD reduces forward loss vs. 0.8 V Schottky at high temperature.

Industrial Motor Drives

AC-DC Power Supplies

Use Scenario: Isolated gate driver interface for 3-phase inverter IGBT/MOSFET high-side switches in HVAC blower modules.

IC Role / Device Role / Timing Role: High-voltage level-shifting switch controlling bootstrap capacitor recharge path.

Use Value: 500 V rating withstands 400 V DC link with margin; 2.4 A pulsed current handles peak bootstrap charging demands.

Use Scenario: Active clamp snubber switch in 30–60 W offline flyback converters.

IC Role / Device Role / Timing Role: Transient energy diversion path during primary switch turn-off.

Use Value: 400 mJ E_AS absorbs leakage inductance energy without external TVS; DPAK footprint simplifies layout.

LED Driver Circuits

DC-DC Converters

Use Scenario: High-side switch in constant-current buck LED drivers for street lighting (200–400 V input).

IC Role / Device Role / Timing Role: Primary power switch regulating average LED current via PWM dimming.

Use Value: 3.0 Ω R_DS(on) limits conduction loss to <1.2 W at 2 A; 150 °C T_J(max) supports sealed outdoor enclosures.

Use Scenario: Synchronous rectifier replacement in isolated forward converter secondary side.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode in 24–48 V output stage.

Use Value: Body diode t_rr = 260 ns enables safe commutation; 1.6 V V_SD reduces forward loss vs. 0.8 V Schottky at high temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, TO-220FP package	Higher current rating but through-hole mounting; lacks repetitive avalanche rating	Prefer when higher continuous current and heatsink mounting are available; avoid where surface-mount or avalanche robustness is required
SiHFU420	Same die, IPAK (TO-251) through-hole package; identical R_DS(on), Q_g, and avalanche specs	Requires wave soldering or manual insertion; same electrical performance but different assembly process	Select only when through-hole assembly is mandated; not pin-compatible due to different leadform and thermal pad geometry

Compared with IRFR420TRR, STP5NK50ZFP offers lower on-resistance and higher current but sacrifices surface-mount compatibility and avalanche ruggedness, while SiHFU420 provides identical electrical behavior in a non-SMT package - making IRFR420TRR the sole DPAK option with full repetitive avalanche qualification in this voltage/current class.

Availability

IRFR420TRR is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, LED driver circuits, and DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for IRFR420TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR420TRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness in unclamped inductive switching and cost-sensitive surface-mount power conversion systems.

FAQ

What is the maximum continuous drain current for IRFR420TRR at 100 °C case temperature?

The IRFR420TRR supports 1.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.4 A at 25 °C using the 0.33 W/°C factor, and assumes proper PCB copper area for thermal conduction. Exceeding this current without additional heatsinking risks junction temperature exceeding 150 °C.

Does IRFR420TRR have a qualified repetitive avalanche rating?

Yes, the IRFR420TRR is explicitly rated for repetitive avalanche operation: I_AR = 2.4 A and E_AR = 4.2 mJ, per the Absolute Maximum Ratings table. This capability is validated under defined pulse conditions (pulse width limited by T_J(max)) and distinguishes it from non-avalanche-rated MOSFETs used in similar voltage classes.

What is the gate-source threshold voltage range for IRFR420TRR?

The IRFR420TRR has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This wide range ensures turn-on consistency across process variation and temperature, but requires gate drive ≥10 V to guarantee full enhancement and minimal R_DS(on) in production circuits.

Can IRFR420TRR be used as a direct replacement for IRFR420PbF?

Yes, IRFR420TRR is the tape-and-reel packaging variant of the same die and DPAK (TO-252) construction as IRFR420PbF. Both share identical absolute maximum ratings, electrical specifications, and thermal characteristics; the "TRR" suffix denotes reel packaging with moisture sensitivity level (MSL) 1 - no circuit or layout changes are needed when substituting.

What is the typical body diode reverse recovery charge (Q_rr) for IRFR420TRR?

The IRFR420TRR exhibits a body diode reverse recovery charge (Q_rr) of 0.70–1.4 μC, measured at T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-commutated topologies, and must be accounted for in gate drive timing and snubber design when the device operates in freewheeling mode.

IRFR420TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR420TRR FAQ

1.How can I place an order for IRFR420TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR420TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR420TRR reliable?

The price and inventory of IRFR420TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR420TRR is usually 5 days.

3.What payment methods are accepted for IRFR420TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR420TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR420TRR?

IRFR420TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR420TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR420TRR?

For technical support, including IRFR420TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR420TRR requirements.

6.How does Aetrix verify that IRFR420TRR is sourced from the original manufacturer or authorized distributors?

All IRFR420TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR420TRR meets industry standards.

7.What is the process for return or replacement of IRFR420TRR?

All IRFR420TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR420TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR420TRR part is unused and in its original packaging.

Return procedure for IRFR420TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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