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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR430APBF

Name: IRFR430APBF
Brand: Vishay Siliconix
SKU: IRFR430APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR430APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR430APBF.pdf

Description:: MOSFET N-CH 500V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR430APBF from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 1.7 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 130 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS primary-side switches and UPS hold-up circuits.

For engineers reviewing the IRFR430APBF datasheet, IRFR430APBF pinout, IRFR430APBF application, or IRFR430APBF equivalent, key selection criteria include its 500 V V_DS, 1.7 Ω on-resistance at 10 V drive, 24 nC Q_g, avalanche ruggedness (130 mJ E_AS), and DPAK thermal performance (R_thJC = 1.1 °C/W).

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche capability and specified effective output capacitance (C_{oss eff.} = 51 pF). Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (13/24 = 54%) support robust hard-switching operation in flyback and forward converters.

The body diode exhibits 1.5 V forward drop at 5.0 A and 410–620 ns reverse recovery time, enabling moderate-frequency synchronous rectification replacement where dI/dt ≤ 320 A/μs and T_J ≤ 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25% margin for surge and ringing
R_DS(on)	1.7 Ω @ V_GS = 10 V - enables <1.7 W conduction loss at 5 A continuous drain current
Q_g	24 nC - determines gate driver current requirement (e.g., 1.2 A peak for 20 ns turn-on)
E_AS	130 mJ - withstands unclamped inductive switching events without failure
R_thJC	1.1 °C/W - allows 110 W power dissipation with 121 °C ΔT to case at T_C = 25 °C
I_D (T_C = 100 °C)	3.2 A - defines usable current derating in thermally constrained PCB layouts
V_GS(th)	2.0–4.5 V - ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction to PCB copper; 3-pin surface-mount outline per JEDEC MS-012, 6.35 mm × 6.73 mm footprint, 1.78 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≥10 V for full enhancement; Q_gs = 6.5 nC defines Miller plateau duration
D (Drain)	High-side power switch node	Connected to drain-source voltage up to 500 V; electrically tied to exposed thermal pad for heat sinking
S (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; body diode anode connects internally to source

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate driver power loss and simplifies drive circuit design for 100–500 kHz SMPS
Specified C_{oss eff.} (51 pF)	Enables accurate snubber and resonant timing calculations in LLC and QR flyback topologies
Avalanche-rated (E_AS = 130 mJ)	Eliminates need for external clamping in inductive load switching applications like solenoid drivers
Improved dV/dt ruggedness (3.0 V/ns)	Prevents spurious turn-on during high dv/dt transients in high-side configurations
Characterized body diode (t_rr = 410–620 ns)	Supports controlled freewheeling in non-synchronous buck or boost converters

Applications

Offline AC-DC Adapters	Uninterruptible Power Supplies (UPS)
Use Scenario: Primary-side switching in 65–150 W universal-input flyback converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated output via transformer. Use Value: 500 V rating accommodates 375 V DC link after bridge rectification; 1.7 Ω R_DS(on) limits conduction loss to <1.7 W at 5 A peak.	Use Scenario: DC-DC boost stage in online UPS battery backup circuits operating from 36–72 V battery banks. IC Role / Device Role / Timing Role: Sustained high-current switching element handling 5 A continuous load during mains failure. Use Value: 3.2 A current rating at 100 °C case temperature ensures thermal headroom under sustained overload conditions.
Industrial Motor Drives	LED Streetlight Drivers
Use Scenario: Half-bridge high-side switch in 200–400 W BLDC motor gate driver stages. IC Role / Device Role / Timing Role: Fast-turning power switch managing PWM-controlled phase current with dV/dt immunity. Use Value: 3.0 V/ns peak diode recovery dV/dt rating prevents false triggering during commutation transients.	Use Scenario: Buck-derived constant-current LED driver for outdoor luminaires requiring >5 kV surge immunity. IC Role / Device Role / Timing Role: Primary switching FET in isolated flyback topology delivering regulated current to 40–80 V LED strings. Use Value: 130 mJ E_AS withstands lightning-induced surges on AC input without clamping components.

Offline AC-DC Adapters

Uninterruptible Power Supplies (UPS)

Use Scenario: Primary-side switching in 65–150 W universal-input flyback converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated output via transformer.

Use Value: 500 V rating accommodates 375 V DC link after bridge rectification; 1.7 Ω R_DS(on) limits conduction loss to <1.7 W at 5 A peak.

Use Scenario: DC-DC boost stage in online UPS battery backup circuits operating from 36–72 V battery banks.

IC Role / Device Role / Timing Role: Sustained high-current switching element handling 5 A continuous load during mains failure.

Use Value: 3.2 A current rating at 100 °C case temperature ensures thermal headroom under sustained overload conditions.

Industrial Motor Drives

LED Streetlight Drivers

Use Scenario: Half-bridge high-side switch in 200–400 W BLDC motor gate driver stages.

IC Role / Device Role / Timing Role: Fast-turning power switch managing PWM-controlled phase current with dV/dt immunity.

Use Value: 3.0 V/ns peak diode recovery dV/dt rating prevents false triggering during commutation transients.

Use Scenario: Buck-derived constant-current LED driver for outdoor luminaires requiring >5 kV surge immunity.

IC Role / Device Role / Timing Role: Primary switching FET in isolated flyback topology delivering regulated current to 40–80 V LED strings.

Use Value: 130 mJ E_AS withstands lightning-induced surges on AC input without clamping components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Higher current density but through-hole mounting; lacks DPAK thermal pad integration	Select when higher peak current (4.5 A vs. 5.0 A) and lower R_DS(on) are prioritized over surface-mount assembly
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package	Lower voltage rating (100 V) and much higher current capacity; unsuitable for 400 V bus applications	Use only in low-voltage (<100 V) high-current DC-DC converters where IRFR430APBF's 500 V rating is unnecessary

Compared with STP5NK50ZFP and IXTP50N10P, the IRFR430APBF offers optimal trade-off of 500 V rating, DPAK thermal performance, and 24 nC gate charge for compact, high-efficiency offline SMPS - whereas STP5NK50ZFP trades mountability for marginally better conduction, and IXTP50N10P is incompatible with high-voltage topologies.

Availability

IRFR430APBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, uninterruptible power supplies, and industrial motor drives requiring stable component supply across extended production lifecycles.

Supply support for IRFR430APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR430APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for ruggedness and efficiency in offline switching applications including SMPS, UPS, and industrial power conversion.

FAQ

What is the maximum continuous drain current for IRFR430APBF at 100 °C case temperature?

The IRFR430APBF supports 3.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain junction temperature below 150 °C. The IRFR430APBF datasheet confirms this value under linear derating conditions.

Does IRFR430APBF have avalanche capability, and how is it quantified?

Yes, the IRFR430APBF is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 130 mJ, and repetitive avalanche current (I_AR) is 5.0 A. These values are measured under standardized test conditions (L = 11 mH, R_g = 25 Ω, I_AS = 5.0 A) and validated per Vishay's characterization methodology. The IRFR430APBF specification sheet explicitly lists these parameters in the Absolute Maximum Ratings section.

What is the gate threshold voltage range for IRFR430APBF, and why does it matter for drive design?

The IRFR430APBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA. This wide range means gate drive must exceed 4.5 V to ensure consistent enhancement across process variation. For reliable switching, 10 V drive is recommended to achieve the specified 1.7 Ω R_DS(on). The IRFR430APBF datasheet specifies this parameter in the Static Characteristics table, confirming compatibility with standard logic-level and dedicated MOSFET drivers.

Can IRFR430APBF be used in place of IRFR430PBF, and what is the key difference?

Yes, the IRFR430APBF replaces the legacy IRFR430PBF with identical electrical specifications and DPAK packaging, differing only in RoHS compliance: IRFR430APBF is lead (Pb)-free and halogen-free per Vishay's "-PbF" suffix convention. All parametric values - including V_DS, R_DS(on), Q_g, and avalanche ratings - are unchanged. The IRFR430APBF datasheet supersedes earlier revisions and confirms backward compatibility in design-in documentation.

What thermal resistance values apply to IRFR430APBF, and how do they impact heatsinking?

The IRFR430APBF has R_thJC = 1.1 °C/W (junction-to-case) and R_thJA = 62 °C/W (junction-to-ambient, no heatsink). With its DPAK thermal pad, effective heatsinking requires ≥100 mm² of 2-oz copper pour connected to the drain pad. At 5 A continuous current and 1.7 Ω R_DS(on), power dissipation is ~42.5 W, demanding careful thermal layout. The IRFR430APBF thermal data is documented in the Thermal Resistance Ratings table of the official datasheet.

IRFR430APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR430APBF FAQ

1.How can I place an order for IRFR430APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR430APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR430APBF reliable?

The price and inventory of IRFR430APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR430APBF is usually 5 days.

3.What payment methods are accepted for IRFR430APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR430APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR430APBF?

IRFR430APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR430APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR430APBF?

For technical support, including IRFR430APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR430APBF requirements.

6.How does Aetrix verify that IRFR430APBF is sourced from the original manufacturer or authorized distributors?

All IRFR430APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR430APBF meets industry standards.

7.What is the process for return or replacement of IRFR430APBF?

All IRFR430APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR430APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR430APBF part is unused and in its original packaging.

Return procedure for IRFR430APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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