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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR430ATRLPBF

Name: IRFR430ATRLPBF
Brand: Vishay Siliconix
SKU: IRFR430ATRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR430ATRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR430ATRLPBF.pdf

Description:: MOSFET N-CH 500V 5A DPAK

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Product details

Overview

IRFR430ATRLPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 1.7 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 130 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the IRFR430ATRLPBF datasheet, IRFR430ATRLPBF pinout, IRFR430ATRLPBF application, or IRFR430ATRLPBF equivalent, key selection criteria include its 500 V blocking rating, 1.7 Ω on-resistance at 10 V drive, 24 nC gate charge for moderate-speed switching, rugged dV/dt capability (3.0 V/ns), and DPAK thermal performance (R_thJC = 1.1 °C/W).

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized capacitance (C_iss = 490 pF, C_oss = 75 pF at V_GS = 0 V), specified effective output capacitance (C_{oss eff.} = 51 pF), and validated unclamped inductive switching robustness (E_AS = 130 mJ, I_AR = 5.0 A).

Its gate threshold voltage range (2.0–4.5 V) ensures reliable turn-on with standard 10 V gate drivers, while body diode parameters - V_SD = 1.5 V at 5.0 A, t_rr = 410–620 ns - support moderate-frequency freewheeling in hard-switched topologies without requiring external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus
R_DS(on)	1.7 Ω @ V_GS = 10 V - enables ≤8.5 W conduction loss at 5.0 A continuous drain current
Q_g	24 nC - compatible with low-power gate drivers (e.g., 1 A peak) for <50 kHz operation
E_AS	130 mJ - withstands energy transients during overcurrent or inductive load switching without failure
t_r/t_f	27 ns / 16 ns - supports fast switching with minimal overlap loss in hard-switched converters
R_thJC	1.1 °C/W - allows 110 W dissipation with modest heatsinking (ΔT = 121 °C at T_C = 25 °C)
V_GS(th)	2.0–4.5 V - ensures clean turn-on with standard logic-level or microcontroller-driven gate circuits

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≤±30 V bias; low 6.5 nC Q_gs enables simple RC or IC-based drive
D (Drain)	High-voltage power output	Connected to exposed copper pad on bottom of package; carries full switched current and must be routed with wide copper for thermal and EMI control
S (Source)	Power return and reference	Provides ground reference for gate drive; ties to source node of driver circuit; critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate drive power and simplifies driver selection - no need for high-current buffer stages in <100 kHz designs
Specified C_{oss eff.} (51 pF)	Enables accurate snubber and resonant timing calculations across full V_DS swing (0–400 V)
Avalanche-rated (E_AS = 130 mJ)	Eliminates need for external clamping in inductive switching applications like relay drivers or motor controls
High dV/dt immunity (3.0 V/ns)	Prevents false turn-on during fast transient events in noisy industrial or high-side configurations
Characterized body diode (t_rr = 410–620 ns)	Supports predictable freewheeling behavior in flyback and forward converters without external diode substitution

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 100–500 W offline flyback or forward converter operating from 85–265 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 50–100 kHz with hard switching. Use Value: 500 V rating accommodates reflected voltage spikes and line surges; 1.7 Ω R_DS(on) limits conduction loss at full load; 24 nC Q_g enables efficient gate driving with integrated PWM controller outputs.	Use Scenario: DC-DC boost stage or inverter H-bridge switch in line-interactive or online UPS handling 200–1000 VA loads. IC Role / Device Role / Timing Role: High-side or low-side switching element managing battery-to-AC inversion or mains bypass path; subjected to repetitive surge and hold conditions. Use Value: 130 mJ E_AS withstands inductive kickback from transformer windings; 3.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus transitions; DPAK thermal resistance supports sustained 5 A operation with minimal heatsink.
High-Speed Power Switching	Industrial Motor Control
Use Scenario: Solid-state relay replacement or programmable load switch in PLC output modules or test equipment. IC Role / Device Role / Timing Role: Fast-turning power switch enabling sub-microsecond on/off transitions for precision pulse-width control. Use Value: 27 ns rise time and 16 ns fall time minimize transition losses; 20 A pulsed drain current (I_DM) supports short-duration overload tolerance; TO-252 footprint allows compact, high-density board layout.	Use Scenario: Low-side current-sense switch or brake FET in 24–48 V brushed DC motor drives for HVAC actuators or conveyor systems. IC Role / Device Role / Timing Role: Controlled freewheeling path during PWM off-time; handles reverse recovery current from motor inductance. Use Value: Body diode V_SD = 1.5 V at 5 A ensures low-loss recirculation; t_rr = 410–620 ns enables stable commutation without oscillation; 150 °C max junction temperature supports operation in enclosed enclosures.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 100–500 W offline flyback or forward converter operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 50–100 kHz with hard switching.

Use Value: 500 V rating accommodates reflected voltage spikes and line surges; 1.7 Ω R_DS(on) limits conduction loss at full load; 24 nC Q_g enables efficient gate driving with integrated PWM controller outputs.

Use Scenario: DC-DC boost stage or inverter H-bridge switch in line-interactive or online UPS handling 200–1000 VA loads.

IC Role / Device Role / Timing Role: High-side or low-side switching element managing battery-to-AC inversion or mains bypass path; subjected to repetitive surge and hold conditions.

Use Value: 130 mJ E_AS withstands inductive kickback from transformer windings; 3.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus transitions; DPAK thermal resistance supports sustained 5 A operation with minimal heatsink.

High-Speed Power Switching

Industrial Motor Control

Use Scenario: Solid-state relay replacement or programmable load switch in PLC output modules or test equipment.

IC Role / Device Role / Timing Role: Fast-turning power switch enabling sub-microsecond on/off transitions for precision pulse-width control.

Use Value: 27 ns rise time and 16 ns fall time minimize transition losses; 20 A pulsed drain current (I_DM) supports short-duration overload tolerance; TO-252 footprint allows compact, high-density board layout.

Use Scenario: Low-side current-sense switch or brake FET in 24–48 V brushed DC motor drives for HVAC actuators or conveyor systems.

IC Role / Device Role / Timing Role: Controlled freewheeling path during PWM off-time; handles reverse recovery current from motor inductance.

Use Value: Body diode V_SD = 1.5 V at 5 A ensures low-loss recirculation; t_rr = 410–620 ns enables stable commutation without oscillation; 150 °C max junction temperature supports operation in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Higher current density but through-hole mounting; lacks DPAK's thermal pad advantage	Preferred where higher peak current and through-hole reliability outweigh surface-mount thermal benefits
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 75 nC, TO-220 package	Lower voltage rating but vastly lower on-resistance; unsuitable for >100 V applications	Only viable in low-voltage, high-current DC-DC stages - not a functional substitute for 500 V operation

Compared with STP5NK50ZFP, IRFR430ATRLPBF offers superior thermal interface via DPAK's exposed drain pad and tighter gate charge control, while IXTP50N10P serves entirely different voltage-class applications and cannot replace IRFR430ATRLPBF in 400 V bus environments.

Availability

IRFR430ATRLPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial switching applications requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR430ATRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The IRFR430A family targets high-voltage, medium-current power switching in space-constrained designs, emphasizing avalanche ruggedness, gate drive simplicity, and thermal efficiency in surface-mount form factors.

FAQ

What is the maximum continuous drain current for IRFR430ATRLPBF at 100 °C case temperature?

The maximum continuous drain current for IRFR430ATRLPBF is 3.2 A when the case temperature (T_C) is 100 °C, as defined by its linear derating factor of 0.91 W/°C and 110 W maximum power dissipation at 25 °C. This value reflects thermal limitation, not device intrinsic capability, and assumes proper PCB copper area per Vishay Application Note 826.

Does IRFR430ATRLPBF have a built-in body diode, and what are its key parameters?

Yes, IRFR430ATRLPBF integrates a body diode inherent to its vertical MOSFET structure. Key parameters include forward voltage V_SD = 1.5 V at 5.0 A and 25 °C, reverse recovery time t_rr = 410–620 ns at 25 °C, and reverse recovery charge Q_rr = 1.4–2.1 μC - all measured under standardized conditions (IF = 5.0 A, dI/dt = 100 A/μs).

Can IRFR430ATRLPBF be used with 5 V logic-level gate drive?

No - IRFR430ATRLPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.5 V, but full enhancement and guaranteed R_DS(on) ≤ 1.7 Ω require V_GS = 10 V. At 5 V, R_DS(on) increases significantly (not characterized in datasheet), resulting in excessive conduction loss and thermal risk; a 10 V gate driver is mandatory for rated performance.

What is the thermal resistance from junction to case (R_thJC) for IRFR430ATRLPBF, and how is it measured?

The junction-to-case thermal resistance (R_thJC) for IRFR430ATRLPBF is 1.1 °C/W maximum, measured from the silicon die junction to the drain metal tab (exposed pad) of the DPAK package. This value assumes ideal thermal interface (flat, greased surface) and is critical for calculating allowable power dissipation when heatsinking the drain pad directly.

Is IRFR430ATRLPBF RoHS-compliant and halogen-free?

Yes, IRFR430ATRLPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standard (document 99912). The "PbF" suffix explicitly denotes lead-free termination, and the part is qualified for use in environmentally regulated industrial and consumer applications.

IRFR430ATRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR430ATRLPBF FAQ

1.How can I place an order for IRFR430ATRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR430ATRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR430ATRLPBF reliable?

The price and inventory of IRFR430ATRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR430ATRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR430ATRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR430ATRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR430ATRLPBF?

IRFR430ATRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR430ATRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR430ATRLPBF?

For technical support, including IRFR430ATRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR430ATRLPBF requirements.

6.How does Aetrix verify that IRFR430ATRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR430ATRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR430ATRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR430ATRLPBF?

All IRFR430ATRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR430ATRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR430ATRLPBF part is unused and in its original packaging.

Return procedure for IRFR430ATRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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