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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR430ATRPBF

Name: IRFR430ATRPBF
Brand: Vishay Siliconix
SKU: IRFR430ATRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR430ATRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR430ATRPBF.pdf

Description:: MOSFET N-CH 500V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR430ATRPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 1.7 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 130 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS primary-side circuits, UPS inverters, and industrial DC-DC converters.

For engineers reviewing the IRFR430ATRPBF datasheet, IRFR430ATRPBF pinout, IRFR430ATRPBF application, or IRFR430ATRPBF equivalent, key selection criteria include its 500 V V_DS rating, 1.7 Ω on-resistance at 10 V drive, 24 nC Q_g, body diode recovery time of 410–620 ns, and DPAK thermal performance with R_thJC = 1.1 °C/W.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage ruggedness and controlled dV/dt immunity. Its gate charge profile (Q_gs = 6.5 nC, Q_gd = 13 nC) supports efficient hard-switching up to 250 V bus voltages with 15 Ω gate resistance.

The integral body diode is characterized for unclamped inductive switching (I_AS = 5.0 A, E_AS = 130 mJ) and exhibits 1.5 V forward drop at 5.0 A and 25 °C, with reverse recovery charge Q_rr = 1.4–2.1 μC under 100 A/μs dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full 400 V DC bus with margin for surge and ringing in offline applications
R_DS(on)	1.7 Ω @ V_GS = 10 V - Enables 5.0 A continuous conduction at T_C = 25 °C with ≤8.5 W conduction loss
Q_g	24 nC - Requires ≤240 μC gate drive per 10 kHZ switching cycle; compatible with standard MOSFET drivers
E_AS	130 mJ - Supports robust operation in inductive load switching without external snubbers
t_rr	410–620 ns - Limits diode reverse recovery losses in synchronous rectifier or freewheeling configurations
R_thJC	1.1 °C/W - Allows 110 W dissipation at ΔT = 121 °C junction-to-case rise, enabling high-power density layouts
I_D (T_C = 100 °C)	3.2 A - Defines usable current limit in thermally constrained PCB-mount environments

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts 10 V logic-level drive; 6.5 nC Q_gs enables fast turn-on with low driver stress
Drain (D)	High-voltage power terminal	Connected to exposed copper tab; carries full switched current and dissipates heat directly to PCB
Source (S)	Reference node	Common return path for load current and gate drive reference; low-inductance layout critical for dV/dt stability

Key Features

Feature	Design Value
Low gate charge (Q_g = 24 nC)	Reduces driver power requirement and switching transition time in high-frequency SMPS
Improved dV/dt ruggedness (3.0 V/ns)	Prevents false turn-on during high-slew-rate voltage transients in bridge-leg configurations
Fully characterized avalanche capability	Enables reliable operation in inductive switching without external clamping components
Effective output capacitance (C_{oss eff} = 51 pF)	Provides accurate timing for resonant circuit design and zero-voltage switching analysis
Lead (Pb)-free and halogen-free construction	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements

Applications

Industrial SMPS Primary Switch	UPS Inverter Half-Bridge
Use Scenario: High-efficiency 500 W offline flyback converter operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary to secondary via transformer coupling. Use Value: 500 V rating accommodates 400 V DC link with safety margin; 1.7 Ω R_DS(on) limits conduction loss to <9 W at full load.	Use Scenario: 1 kVA line-interactive UPS delivering clean sine-wave output during grid failure. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge inverter stage driving LC filter into AC load. Use Value: 130 mJ E_AS withstands inductive kickback during dead-time transitions; 3.0 V/ns dV/dt rating prevents shoot-through.
Motor Drive Snubberless Switch	DC-DC Isolated Forward Converter
Use Scenario: 24 V DC brushless motor controller with regenerative braking in factory automation. IC Role / Device Role / Timing Role: Low-side switching element handling PWM-controlled phase current with body-diode freewheeling. Use Value: 410–620 ns t_rr and 1.4–2.1 μC Q_rr minimize switching loss during commutation; 5.0 A I_S sustains peak regeneration current.	Use Scenario: 48 V input, 12 V/20 A isolated DC-DC module for telecom power shelf. IC Role / Device Role / Timing Role: Primary-side active clamp switch managing transformer reset and leakage energy recovery. Use Value: 24 nC Q_g enables precise timing control of clamp pulse width; 1.1 °C/W R_thJC maintains junction temperature below 125 °C under full load.

Industrial SMPS Primary Switch

UPS Inverter Half-Bridge

Use Scenario: High-efficiency 500 W offline flyback converter operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary to secondary via transformer coupling.

Use Value: 500 V rating accommodates 400 V DC link with safety margin; 1.7 Ω R_DS(on) limits conduction loss to <9 W at full load.

Use Scenario: 1 kVA line-interactive UPS delivering clean sine-wave output during grid failure.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge inverter stage driving LC filter into AC load.

Use Value: 130 mJ E_AS withstands inductive kickback during dead-time transitions; 3.0 V/ns dV/dt rating prevents shoot-through.

Motor Drive Snubberless Switch

DC-DC Isolated Forward Converter

Use Scenario: 24 V DC brushless motor controller with regenerative braking in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element handling PWM-controlled phase current with body-diode freewheeling.

Use Value: 410–620 ns t_rr and 1.4–2.1 μC Q_rr minimize switching loss during commutation; 5.0 A I_S sustains peak regeneration current.

Use Scenario: 48 V input, 12 V/20 A isolated DC-DC module for telecom power shelf.

IC Role / Device Role / Timing Role: Primary-side active clamp switch managing transformer reset and leakage energy recovery.

Use Value: 24 nC Q_g enables precise timing control of clamp pulse width; 1.1 °C/W R_thJC maintains junction temperature below 125 °C under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Higher current rating but through-hole mounting; lacks DPAK's thermal pad integration	Select when board space allows through-hole and higher peak current is needed
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 90 nC, TO-220 package	Lower voltage rating but much lower on-resistance; unsuitable for 400 V bus applications	Select only for low-voltage, high-current DC-DC stages-not a direct replacement for IRFR430ATRPBF

Compared with STP5NK50ZFP, IRFR430ATRPBF offers superior surface-mount thermal management via DPAK's exposed drain pad, while IXTP50N10P trades voltage capability for conduction efficiency-neither is pin-compatible, and both require PCB layout revision.

Availability

IRFR430ATRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial power switching requiring stable component supply across production lifecycles.

Supply support for IRFR430ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power devices for industrial and computing markets.

The IRFR430ATRPBF belongs to Vishay's high-voltage Power MOSFET family engineered for ruggedness in offline AC-DC conversion, UPS, and motor control-prioritizing avalanche energy, dV/dt immunity, and thermal performance over ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current for IRFR430ATRPBF at 100 °C case temperature?

The IRFR430ATRPBF supports 3.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain junction temperature ≤150 °C. The IRFR430ATRPBF datasheet confirms this value under linear derating conditions with 0.91 W/°C slope from 110 W at 25 °C.

Does IRFR430ATRPBF have a fully characterized body diode for synchronous rectification?

Yes, the IRFR430ATRPBF includes comprehensive body diode specifications: V_SD = 1.5 V at 5.0 A and 25 °C, t_rr = 410–620 ns, and Q_rr = 1.4–2.1 μC under defined test conditions. These parameters are measured and published in the datasheet, enabling accurate loss modeling in freewheeling or synchronous rectifier topologies where the IRFR430ATRPBF operates in bidirectional conduction mode.

What is the gate threshold voltage range for IRFR430ATRPBF?

The gate threshold voltage (V_GS(th)) for IRFR430ATRPBF is specified from 2.0 V to 4.5 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excursions. The IRFR430ATRPBF is not a logic-level device; it requires ≥5 V minimum for partial conduction and ≥10 V for full R_DS(on) specification compliance.

Can IRFR430ATRPBF be used in avalanche mode for energy clamping?

Yes, the IRFR430ATRPBF is fully characterized for repetitive and single-pulse avalanche operation: E_AS = 130 mJ (single pulse), I_AR = 5.0 A, and E_AR = 11 mJ (repetitive). These ratings are validated per JEDEC standards and documented in the datasheet, permitting controlled use in unclamped inductive switching applications-such as relay driving or solenoid control-without external snubbers, provided layout minimizes stray inductance.

What is the thermal resistance from junction to case (R_thJC) for IRFR430ATRPBF?

The maximum junction-to-case thermal resistance (R_thJC) for IRFR430ATRPBF is 1.1 °C/W, measured from junction to the drain tab (case). This value is critical for heatsink sizing and PCB copper area calculation; with 110 W maximum power dissipation at T_C = 25 °C, the IRFR430ATRPBF can sustain a 121 °C junction-to-case temperature gradient. The datasheet specifies this parameter under standardized test conditions with flat, greased interface.

IRFR430ATRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR430ATRPBF FAQ

1.How can I place an order for IRFR430ATRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR430ATRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR430ATRPBF reliable?

The price and inventory of IRFR430ATRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR430ATRPBF is usually 5 days.

3.What payment methods are accepted for IRFR430ATRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR430ATRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR430ATRPBF?

IRFR430ATRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR430ATRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR430ATRPBF?

For technical support, including IRFR430ATRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR430ATRPBF requirements.

6.How does Aetrix verify that IRFR430ATRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR430ATRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR430ATRPBF meets industry standards.

7.What is the process for return or replacement of IRFR430ATRPBF?

All IRFR430ATRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR430ATRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR430ATRPBF part is unused and in its original packaging.

Return procedure for IRFR430ATRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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