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Vishay Siliconix IRFR430ATRRPBF

Part No.:
IRFR430ATRRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR430ATRRPBF.pdf
Description:
MOSFET N-CH 500V 5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,923

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Product details

Overview

IRFR430ATRRPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring RDS(on) = 1.7 Ω at VGS = 10 V, Qg = 24 nC, and avalanche-rated operation for robust high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the IRFR430ATRRPBF datasheet, IRFR430ATRRPBF pinout, IRFR430ATRRPBF application, or IRFR430ATRRPBF equivalent, key selection criteria include its 500 V VDS, 1.7 Ω on-resistance at 10 V gate drive, 24 nC total gate charge, and DPAK thermal performance with RthJC = 1.1 °C/W - critical for high-reliability power conversion designs.

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage unclamped inductive switching, with fully characterized Ciss (490 pF), Coss (75 pF), and Crss (4.5 pF) enabling accurate snubber and gate-drive design. Its 130 mJ single-pulse avalanche energy rating supports reliable operation under transient overloads.

The gate threshold voltage range (2.0–4.5 V) and low gate leakage (±100 nA) ensure stable turn-on control across temperature, while the body diode's trr = 410–620 ns and Qrr = 1.4–2.1 μC are specified for hard-switched freewheeling applications without external diode supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus
RDS(on) 1.7 Ω @ VGS = 10 V - enables <5 W conduction loss at 5 A continuous drain current
Qg 24 nC - determines gate driver current requirement (~1.6 mA avg. for 100 kHz, 10 V swing)
EAS 130 mJ - allows safe operation during 5 A inductive turn-off transients without external clamping
tr/tf 27 ns / 16 ns - supports >500 kHz switching in resonant and hard-switched topologies
TJ Range −55 °C to +150 °C - qualified for industrial and telecom power supply environments
RthJC 1.1 °C/W - enables 110 W power dissipation with ≤121 °C junction rise above 25 °C case

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction to PCB copper; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compatible with IPC-7351B SO-252 footprint.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; 6.5 nC Qgs ensures fast turn-on with minimal Miller effect
D (Drain) High-voltage power terminal Connected to exposed backside thermal pad; carries full load current and withstands 500 V blocking
S (Source) Reference and return path Common node for gate drive return and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature Design Value
Low Qg (24 nC) Reduces gate driver power loss and simplifies drive circuitry for high-frequency SMPS
Specified Coss eff. (51 pF) Enables precise calculation of turn-off energy loss and snubber sizing in flyback and LLC converters
Avalanche-rated (EAS = 130 mJ) Eliminates need for external RCD clamp in cost-sensitive offline adapters and UPS inverters
Body diode trr (410–620 ns) Supports synchronous rectification replacement in medium-frequency forward converters
100 % UIS tested Guarantees ruggedness against unclamped inductive switching stress in real-world board-level conditions

Applications

AC/DC Adapter Primary Switch UPS Inverter Half-Bridge

Use Scenario: 65–100 W universal-input offline flyback converter operating at 65 kHz.

IC Role / Device Role: Main high-side switching element handling 400 V DC bus and peak currents up to 5 A.

Use Value: 1.7 Ω RDS(on) limits conduction loss to <4.3 W; 130 mJ EAS absorbs leakage inductance spikes without snubber.

Use Scenario: 500–1000 VA line-interactive UPS with 200 kHz half-bridge inverter stage.

IC Role / Device Role: Low-side switch in IGBT/MOSFET hybrid bridge driving transformer-coupled output.

Use Value: 24 nC Qg enables efficient 200 kHz switching; 1.1 °C/W RthJC sustains 85 °C case temp under 60 W dissipation.

Industrial Motor Drive Snubber Telecom DC/DC Converter Switch

Use Scenario: 24 V input, 48 V output isolated forward converter in PLC power module.

IC Role / Device Role: Freewheeling MOSFET replacing Schottky diode in active clamp circuit.

Use Value: Body diode Qrr = 1.4–2.1 μC minimizes reverse recovery loss; 500 V rating accommodates 2× input voltage transients.

Use Scenario: 48 V input, 12 V output phase-shifted full-bridge DC/DC for 5G base station power shelf.

IC Role / Device Role: Secondary-side synchronous rectifier with integrated body diode used in zero-voltage switching (ZVS) mode.

Use Value: tr/tf = 27/16 ns ensures clean ZVS transition; −55 °C to +150 °C rating supports extended outdoor thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP5NK50ZFP 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package Higher current rating but through-hole mounting; lacks DPAK thermal pad integration Prefer when higher peak current margin is needed and PCB space allows through-hole assembly
IXTP50N10P 100 V, 50 A, RDS(on) = 0.022 Ω, TO-220 package - not voltage-compatible Lower VDS makes it unsuitable for 400 V bus applications; only viable in low-voltage DC/DC Exclude for any 500 V or offline AC/DC use; consider only for 12–48 V secondary-side switching

Compared with STP5NK50ZFP, IRFR430ATRRPBF offers superior thermal interface via DPAK drain pad and lower profile for compact layouts, while IXTP50N10P is not a functional substitute due to its 100 V rating - engineers must verify VDS headroom before substitution.

Availability

IRFR430ATRRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR430ATRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR430A family targets high-voltage power conversion where avalanche ruggedness, low gate charge, and DPAK thermal efficiency are essential - designed specifically for cost-sensitive yet reliability-critical offline power stages.

FAQ

What is the maximum continuous drain current for IRFR430ATRRPBF at 100 °C case temperature?

The maximum continuous drain current for IRFR430ATRRPBF is 3.2 A at TC = 100 °C, derated linearly from 5.0 A at 25 °C using a factor of 0.91 W/°C. This value reflects thermal limitation of the DPAK package, not silicon capability, and assumes proper PCB copper area per Vishay Application Note 826.

Does IRFR430ATRRPBF have a fully characterized body diode for synchronous rectification?

Yes, IRFR430ATRRPBF specifies body diode parameters including VSD = 1.5 V at IS = 5.0 A, trr = 410–620 ns, and Qrr = 1.4–2.1 μC at TJ = 25 °C. These values are measured under controlled dI/dt and temperature conditions and support design of self-driven synchronous rectifiers in forward and LLC converters.

Is IRFR430ATRRPBF RoHS-compliant and halogen-free?

Yes, IRFR430ATRRPBF is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. The "TRRPBF" suffix explicitly denotes Pb-free and halogen-free construction, verified per JEDEC J-STD-609 and IEC 61249-2-21 standards.

What is the gate-source threshold voltage range for IRFR430ATRRPBF?

The gate-source threshold voltage (VGS(th)) for IRFR430ATRRPBF is specified from 2.0 V to 4.5 V at ID = 250 μA and TJ = 25 °C. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity in noisy power environments.

Can IRFR430ATRRPBF be used in avalanche mode repeatedly?

IRFR430ATRRPBF is rated for repetitive avalanche with IAR = 5.0 A and EAR = 11 mJ per pulse, but operation must comply with pulse width and duty cycle limits defined in Figure 11 of the datasheet. Repetitive avalanche is not recommended for continuous operation - it is a survival rating for fault conditions only.

IRFR430ATRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR430ATRRPBF FAQ

1.How can I place an order for IRFR430ATRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR430ATRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR430ATRRPBF reliable?

The price and inventory of IRFR430ATRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR430ATRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR430ATRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR430ATRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR430ATRRPBF?

IRFR430ATRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR430ATRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR430ATRRPBF?

For technical support, including IRFR430ATRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR430ATRRPBF requirements.

6.How does Aetrix verify that IRFR430ATRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR430ATRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR430ATRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR430ATRRPBF?

All IRFR430ATRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR430ATRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR430ATRRPBF part is unused and in its original packaging.

Return procedure for IRFR430ATRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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